209results about How to "Good electrical properties" patented technology

The invention provides a robot joint dynamic cable made of a self-repairing polyurethane material and a preparation method of the robot joint dynamic cable, and belongs to the field of cables. Polytetrahydrofuran glycol and hexamethylene diisocyanate react to form a soft and hard segment structure, 1, 4-butanediol is added for chain extension, dopamine hydrochloride is introduced, the hard segment structure is enhanced, and a self-repairing hydrogen bond network is formed; carbon nanotubes are introduced, and through plasma treatment and silane coupling agent modification, the tensile resistance, fatigue resistance and electrical properties of the material are improved; montmorillonite is compounded with polyethyleneimine through organic treatment, so that the cracking resistance and wear resistance of the material are enhanced; epoxy groups are introduced to the surface of boron nitride, and dopamine hydrochloride is self-polymerized, so that excellent heat dissipation capability and dimensional stability are provided. Through the synergistic effect of the components, the composite material has excellent mechanical properties, electrical properties, heat dissipation, wear resistance and the like, is especially suitable for a dynamic cable of a robot, and can stably work in a complex environment for a long time.

The invention discloses a high-compaction lithium manganese iron phosphate material as well as a preparation method and application thereof. The preparation method comprises the following steps: firstly, respectively preparing large-particle-size ferromanganese phosphate and small-particle-size ferromanganese phosphate through an oxidation-reduction reaction, then compounding the large-particle-size ferromanganese phosphate and the small-particle-size ferromanganese phosphate to serve as a precursor for synthesizing the lithium ferromanganese phosphate, and reacting the precursor with raw materials such as a lithium source to prepare the lithium ferromanganese phosphate. The two precursors with specific particle sizes are compounded, so that the small-particle-size precursor can effectively fill gaps of the large-particle-size precursor, the compaction density of the lithium manganese iron phosphate product is further improved, and meanwhile, excellent electrical properties can be realized.

The invention relates to the field of lithium ion battery materials, and particularly discloses a composite positive electrode material as well as a preparation method and application thereof. The composite positive electrode material comprises a positive electrode active material and a coating material coated on the surface of the positive electrode active material, lithium iron phosphate is used as a basic raw material, and the positive electrode active material is prepared by doping rare earth elements and non-metallic elements; the surface of the positive active matter is coated with a layer of mixture which takes sulfide solid electrolyte, a conductive agent and lithium salt as raw materials, interface impedance is effectively reduced through element doping and surface coating, the interlayer spacing of the material is increased, and the diffusion rate of lithium ions is improved, so that the lithium ion battery also has good electrical properties in a wide temperature range. According to the technical scheme, the problems that in the prior art, the charging and discharging efficiency of a lithium battery is reduced in a high / low-temperature environment, the battery capacity is attenuated, and the cycle performance and the service life of the battery are affected are effectively solved.

The invention belongs to the technical field of power cables, and particularly relates to a high-performance conductive rare earth aluminum alloy and a processing method thereof.The high-performance conductive rare earth aluminum alloy is composed of, by mass, 0.8 wt.%-1.2 wt.% of Cu, 0.13 wt.%-0.18 wt.% of Ni, 0.15 wt.%-0.25 wt.% of rare earth elements and the balance Al; wherein the rare earth element is an Er element or a Y element. According to the high-performance conductive rare earth aluminum alloy, the alloy strength is remarkably improved on the premise that high conductivity is kept, and synchronous improvement of the strength and the conductivity is achieved.

The utility model discloses a self-powered friction structure and an insole. The self-powered friction structure comprises a negative electrode structure which comprises a first negative electrode material layer, a conductive fabric layer and a second negative electrode material layer which are connected in sequence, and the conductive fabric layer is located between the first negative electrode material layer and the second negative electrode material layer; the positive electrode structure comprises a positive electrode material layer and a base layer which are connected with each other; the plurality of elastic columns are uniformly distributed and are connected with the second negative electrode material layer and the positive electrode material layer to form a hollow structure; the first negative electrode material layer and the second negative electrode material layer adopt an electric polarity material different from that of the positive electrode material layer; the negative electrode structure, the elastic column and the positive electrode structure are integrally formed. According to the self-powered friction structure and the insole, the self-powered friction structure is integrally formed, has the advantages of being high in durability and stable in voltage output, can be conveniently cut at will, and meets the requirement for large-scale production.

The invention discloses a kind of energized anti-viscosity tape and its preparation method and application, belonging to the technical field of UV tape processing for battery, and the preparation method comprises the following steps: acrylate pressure-sensitive adhesive, UV prepolymer, composite conductive hydrogel, curing agent, photoinitiator, solvent, leveling agent are mixed, stirred, and conductive glue is obtained; the conductive glue is coated on the upper and lower surfaces of aluminum foil substrate, dried at 80-100°C for 5-6min, and conductive adhesive layer is obtained, and release film is attached to the upper and lower surfaces of conductive adhesive layer to obtain energized anti-viscosity tape. The synthesized porous carbon has high porosity, which promotes manganese-doped nano zinc sulfide to emit light to initiate polymerization, cross-linking and curing of conductive adhesive layer, so that conductive adhesive layer loses viscosity; nano silver particles are formed on the surface of zinc oxide whisker loaded with porous carbon, the pore structure of porous carbon is refined, and the heat dissipation performance of energized anti-viscosity tape is improved.

The invention relates to a semiconductor structure and a preparation method thereof. The semiconductor structure comprises a substrate; a plurality of first isolation grooves and a plurality of second isolation grooves are formed in the substrate, the first isolation grooves extend in the first direction, the second isolation grooves extend in the second direction, and the first direction and the second direction are parallel to the substrate and intersect with each other; the plurality of first isolation grooves and the plurality of second isolation grooves jointly isolate a plurality of active columns arranged in an array. The plurality of active columns are arranged in a row along a first direction; a plurality of bit lines arranged at intervals; the bit lines are located below the active columns and extend in the first direction, and the active columns located in the same row are sequentially connected in series; a plurality of air gap structures; the air gap structures are located between the adjacent bit lines and located at the bottoms of the corresponding first isolation grooves. The semiconductor structure can improve the read-write speed of the memory, so that the memory has more excellent electrical performance.

The invention provides a cross-linked polybenzimidazole membrane as well as a preparation method and application thereof. The cross-linked polybenzimidazole membrane comprises a cross-linked network structure, main raw materials of the crosslinked polybenzimidazole membrane comprise polybenzimidazole, a crosslinking agent and a pore forming agent, the crosslinking agent is a diepoxy compound or a silane coupling agent with an epoxy bond, and the addition amount of the crosslinking agent relative to the polybenzimidazole is 2wt%-10wt%. The cross-linked polybenzimidazole membrane is high in mechanical strength, good in mechanical stability, low in swelling rate in electrolyte and high in durability; the cross-linking agent and the pore-forming agent selected in the invention can ensure that the cross-linked polybenzimidazole membrane forms a cross-linked network structure.

The invention discloses a solvent-free dealcoholization type anti-pollution flashover coating containing a hyperbranched cross-linking agent and a preparation method of the solvent-free dealcoholization type anti-pollution flashover coating, and belongs to the technical field of coatings. The solvent-free dealcoholization type anti-pollution flashover coating is prepared from the following components in parts by mass: 80 to 100 parts of alkoxy silicone oil, 40 to 75 parts of filler, 3 to 7 parts of hyperbranched cross-linking agent, 0.2 to 0.5 part of catalyst, 1 to 3 parts of curing accelerator, 0.5 to 3 parts of coupling agent and 60 to 100 parts of structure control agent, wherein the hyperbranched cross-linking agent is prepared from vinyl trimethoxy silane and trimethoxy hydrogen silane through a cross-linking reaction under the action of an oxidizing agent and a platinum catalyst. The self-made hyperbranched cross-linking agent is added into the solvent-free dealcoholization type anti-pollution flashover coating, so that the mechanical property of the coating can be effectively improved, and the coating has excellent electrical property, meets the requirements of spraying construction and meets the comprehensive performance requirements of the anti-pollution flashover coating.

The invention discloses a wafer refrigerating system of an ion implanter, which is characterized in that a cold ring and a process target disc for bearing a first wafer are arranged in a process chamber, the process target disc is arranged at the top of the cold ring, and the bottom of the cold ring is connected with a distributor through a refrigerant penetrating pipe; a pre-cooling ring and a pre-cooling target disc used for bearing a second wafer are arranged in a mechanical arm cavity, the pre-cooling ring is arranged at the bottom of the pre-cooling target disc, the bottom of the pre-cooling ring is connected with a distributor through a pipeline, the distributor is connected with a cold source through a pipeline, and low-temperature nitrogen provided by the cold source is conveyed into the distributor to be distributed for the second time. Then the wafers are conveyed to a cooling ring and a pre-cooling ring respectively, so that the first wafer on the process target disc and the second wafer on the pre-cooling target disc are cooled to a preset temperature; and the low-temperature nitrogen is subjected to heat exchange in the cold ring and the pre-cooling ring, then returns to the distributor and finally returns to the cold source for cyclic utilization. The low-temperature injection device has the characteristics of compact structure, convenience in operation, high refrigeration efficiency and the like, and the overall working efficiency of low-temperature injection is improved.

The invention relates to the technical field of photovoltaic packaging materials, in particular to a packaging composite material, a preparation method thereof and a perovskite battery assembly. The packaging composite material is prepared from 5 to 25 parts of first EVA (Ethylene Vinyl Acetate) resin, 20 to 50 parts of second EVA resin, 5 to 20 parts of ethylene-acrylic acid copolymer, 10 to 30 parts of compound compatilizer, 1 to 10 parts of silane coupling agent, 0.05 to 0.5 part of modified inorganic filler and 0.05 to 0.5 part of antioxidant, the compound compatilizer is prepared from short-chain siloxane modified EVA resin, long-chain siloxane modified EVA resin and EBA resin according to the mass ratio of (5 to 30) to (5 to 40) to (1 to 15). The packaging composite material disclosed by the invention has good adhesive property, electrical property, damp heat resistance, ultraviolet aging resistance and low creep property, and meets the low-temperature packaging process requirements of the perovskite battery assembly.

The invention relates to the technical field of intelligent materials, and discloses a p-MXene conductive ink and BC reinforced polymer composite film and a preparation method and application thereof.The composite film comprises MXene and bacterial cellulose, the surface of the MXene is coated with waterborne polydopamine, waterborne polyurethane is embedded in the bacterial cellulose, and the surface of the MXene is coated with waterborne polyurethane; hydroxyl groups in the water-based polydopamine and amino groups in the water-based polyurethane form hydrogen bonds to connect the MXene with the bacterial cellulose. The composite film obtained by the invention has excellent mechanical properties and electrical properties, and also has comprehensive properties such as electromagnetic shielding and stress-strain sensing.

The invention belongs to the technical field of photovoltaics, and particularly relates to a heterojunction crystalline silicon solar cell and a preparation method and application thereof. According to the heterojunction crystalline silicon solar cell provided by the invention, MoSz-QD is embedded in the SiOy layer, molybdenum sulfide (MoSz) has good electrical properties, and rapid migration of carriers is facilitated; meanwhile, the band gap of the MoSz-QD can be broadened to gt; 3.0 eV, so that high Ec is formed on an interface to prevent electron transport, and the blocking effect of non-selective carriers (electrons) can be realized; moOx is deposited on the surface of MoSz-QD, an impurity energy level is formed through defect engineering, and only holes are allowed to utilize traps to assist tunneling to form effective transportation, so that the heterojunction crystalline silicon solar cell provided by the invention is a high-performance heterojunction crystalline silicon solar cell; the technical problem that in the prior art, a solar cell with a transition metal oxide (TMO) selective contact layer is poor can be solved.

The invention discloses a solar cell, a preparation method thereof and a photovoltaic module. The preparation method comprises the following steps: providing a silicon wafer; forming a doping structure on the surface of the silicon wafer; forming a patterned mask on the doped structure; forming a dielectric layer on the surface of the doping structure and the surface of the mask; the mask and the dielectric layer on the surface of the mask are removed, and a window penetrating to the doping structure in the thickness direction of the silicon wafer is formed in the dielectric layer; and preparing an electrode in contact with the doping structure at the window of the dielectric layer. According to the method, the patterned mask is prepared firstly, then the dielectric layer is deposited, and the mask is removed to form the window, so that the damage caused by windowing of the dielectric layer by adopting processes such as laser can be remarkably reduced, the growth of a subsequent electrode is ensured, a metalized structure with excellent electrical performance can be obtained, and the battery efficiency and the module power are improved.

The invention discloses a nano bacterial cellulose conductive filler and a preparation method and application thereof, and belongs to the technical field of conductive composite material preparation, the conductive filler is prepared by taking nano bacterial cellulose as a base material, and performing in-situ reduction deposition of nano copper particles or nano silver particles on a three-dimensional network structure of the nano bacterial cellulose. The preparation method comprises the following steps: after purifying nano bacterial cellulose, adding the nano bacterial cellulose into an aqueous solution for dispersion treatment, and then adding a modifier to obtain a pretreated nano bacterial cellulose dispersion liquid; uniformly mixing and stirring an alkali solution and a reducing agent, and adding the mixture into the pretreated nano bacterial cellulose dispersion liquid to obtain nano bacterial cellulose reducing liquid; the preparation method comprises the following steps: mixing and stirring a copper ion or silver ion solution, a dispersing agent and a stabilizer under a constant-temperature condition, dropwise adding the mixture into a nano bacterial cellulose reducing solution, performing in-situ reduction on a matrix to obtain nano copper or nano silver particles, washing the nano copper or nano silver particles with deionized water, and drying the nano copper or nano silver particles to obtain the nano bacterial cellulose conductive filler. The conductive filler can be used for preparing a nano bacterial cellulose-based conductive composite film material.

The invention discloses a PPR antibacterial pipe based on a graphene oxide / nano-silver composite material, and relates to the technical field of antibacterial plastics, the PPR antibacterial pipe is prepared from the following raw materials by weight: 80-100 parts of PPR resin, 1-10 parts of a toughening agent, 0.5-5 parts of a graphene oxide / nano-silver composite material, 0.5-5 parts of a plasticizer, 0.5-5 parts of a compatilizer, 0.5-5 parts of a coupling agent, 0.1-1 part of a light stabilizer, and 0.1-1 part of an antioxidant; the comprehensive performance of the PPR antibacterial pipe is improved by adding the graphene oxide / nano-silver composite material, so that the PPR antibacterial pipe has a wide application range.

The invention discloses a printed radio frequency identification tag and a preparation method thereof, and relates to the field of radio frequency identification tags. The tag comprises a substrate, an antenna and a chip, the antenna comprises a dipole and an electric small ring, the dipole is of a hollow structure, the electric small ring is of a grid structure, the width of grid lines is 0.3 mm-0. 5mm, and the distance between the grid lines is 1-2.5 times of the width of the grid lines. According to the invention, the electric small ring is rasterized, the dipole and the chip are connected through the grid structure, the impedance matching is adjusted, the use amount of the conductive slurry is effectively reduced, and the cost minimization is realized on the basis of ensuring the performance.

The invention discloses a preparation method of nano silver oxide aggregate particles, low-temperature conductive silver paste and a preparation method of the low-temperature conductive silver paste. The preparation method of the aggregate particles comprises the following steps: preparing a silver salt solution, mixing an alcoholic solution with an alkali solution to prepare a mixed solution, then gradually dropwise adding the silver salt solution into the mixed solution for reaction, and filtering and drying a product to prepare the aggregate particles. The nano silver oxide aggregate particles are simple to prepare, a small amount of alcohol is added in the synthesis process, and hydroxyl is contained in the molecular structure of the alcohol and can wrap the surfaces of a plurality of small particles, so that connection among the small particles is enhanced, and the silver oxide aggregate is formed. The uniqueness of the morphology is that the reduction temperature of the silver oxide can be greatly reduced, and feasibility is provided for low-temperature sintering of the conductive paste containing the silver oxide. And the addition proportion of silver oxide and silver particles in the conductive silver paste is regulated and controlled to obtain a paste formula with excellent performance. The conductive paste composed of the nano silver oxide and the nano silver shows excellent conductive performance at low temperature.

The invention discloses a two-dimensional field effect transistor with high-temperature thermal stability and a preparation method thereof, and mainly solves the problem that a two-dimensional material in an existing two-dimensional field effect transistor can be oxidized and decomposed at high temperature. The device comprises a substrate (1), an insulation packaging protection bottom layer (2), a two-dimensional material film layer (3), an insulation packaging protection top layer (6) and a gate electrode (7) from bottom to top, a source electrode (4) and a drain electrode (5) are arranged at the two ends of the film layer (3), and the packaging protection bottom layer and the packaging protection top layer both adopt any one or combination of more of aluminum nitride, hexagonal boron nitride or silicon nitride. Oxygen molecules in the air are prevented from diffusing to the two-dimensional material film layer for reaction at high temperature, so that the two-dimensional material film layer plays a role in high-temperature protection; the two-dimensional material film layer is made of molybdenum disulfide or tungsten disulfide or tungsten diselenide. The high temperature resistance of the two-dimensional field effect transistor is improved, oxygenolysis of the two-dimensional material at high temperature is avoided, and the two-dimensional field effect transistor can be used for aerospace, deep well drilling or other high-temperature environments.

The invention discloses a high-work-function metal oxide target material and a preparation method thereof. The preparation method comprises the following steps: mixing high-work-function metal oxide powder, indium oxide powder and zinc oxide powder into mixed powder according to a set mass ratio; putting the mixed powder into deionized water, adding a dispersing agent, and blending to obtain slurry; the slurry is subjected to high-energy sanding, and a binder is added before sanding is finished; performing spray granulation on the slurry to obtain spherical granulation powder; carrying out compression molding on the spherical granulation powder, and carrying out cold isostatic pressing to obtain a target material biscuit; and the target biscuit is subjected to degreasing and sintering integrated treatment, and the high-work-function metal oxide target is obtained. The high-work-function metal oxide target material disclosed by the embodiment of the invention is small in grain size, uniform in distribution, high in target material density and excellent in electrical property, and can be used for preparing a flexible OLED anode layer thin film material, the device structure is simplified, and the cost is reduced and the efficiency is improved.

The invention provides a multifunctional organic memristor based on a conversion bridge distribution strategy and a preparation method and application thereof, and belongs to the technical field of organic memristors. According to a conversion bridge distribution strategy provided by the invention, an organic semiconductor with relatively strong interaction force between an elastomer with relatively high compatibility and active metal ions (such as aluminum ions, silver ions, copper ions and the like) is selected, and an organic functional layer with a phase separation structure close to thermodynamic equilibrium is prepared through simple physical blending. By further adjusting the content of an organic semiconductor material in the organic functional layer, the type of a conductive path in the functional layer is accurately regulated and controlled, and bimodal neuromorphic signal processing is realized in the same material system. The invention provides a strategy of the stretchable organic memristor which has universality, can finely adjust the types of conductive paths, is high in preparation yield and stability and can perform multi-mode signal processing, and provides a new thought for later development of biocompatible wearable equipment and artificial intelligence application.

The invention belongs to the technical field of gallium oxide crystals, and particularly relates to a gallium oxide crystal electrical property improving method based on microdefect analysis, which comprises the following specific steps: step 1, sample preparation: firstly, selecting or preparing a gallium oxide crystal sample to be analyzed, and ensuring that the surface of the sample is clean, flat and free of obvious macroscopic defects; according to the method, various defect types and distribution thereof in the gallium oxide crystal can be accurately identified and quantified through detailed microdefect analysis. Based on the analysis results, follow-up treatment schemes (such as annealing, doping, polishing, corrosion, ultraviolet irradiation and the like) are specifically formulated and implemented, and defects such as dislocation, lattice distortion, surface roughness and the like which are unfavorable for electrical properties can be effectively reduced or eliminated. The electrical performance indexes such as the electrical resistivity, the carrier concentration and the mobility of the gallium oxide crystal are remarkably improved through the treatment measures, and a reliable material basis is provided for preparing a high-performance gallium oxide-based electronic device.

The invention relates to the technical field of piezoelectric ceramic materials, in particular to potassium-sodium niobate-based lead-free ceramic suitable for high-power devices and a preparation method, the chemical general formula of the potassium-sodium niobate-based lead-free ceramic is 0.96 (K < 0.45 > Na < 0.55 >) NbO < 3-0.04 > Bi < 0.5 + x > Na < 0.5 > ZrO < 3-0.005 > CuO, and x is one of 0, 0.03, 0.05, 0.08 and 0.10. According to the potassium-sodium niobate-based lead-free ceramic suitable for the high-power device and the preparation method, the potassium-sodium niobate-based lead-free ceramic has excellent comprehensive electrical properties including high piezoelectric constant, high quality factor, high Curie temperature and low dielectric loss, and is suitable for being applied to high-power electronic equipment.

The application provides a ferroelectric metal and a preparation method and application thereof. The ferroelectric metal of the application is composed of cubic silicon carbide crystals and doping elements doped therein, wherein the concentration of the doping elements is greater than or equal to 1*10 18 cm ‑3 The material of the application can be prepared by a chemical vapor deposition method, a high-temperature solution growth method, a solid-phase sintering method, a pulse laser deposition method and the like. Since the conductivity of metal, the switching characteristics of ferroelectric and the force-electric coupling characteristics of piezoelectric are integrated, the ferroelectric metal of the application has great application value in the fields of high-performance transducers, high-sensitivity sensors, low-power micro-electro-mechanical system (MEMS), next-generation multifunctional electronic devices and the like.

The invention discloses a preparation method of a light-emitting film with carbon as a doping source to adjust the electrical property of a ZnS film, and belongs to the technical field of film preparation. The preparation of the ZnS and C co-doped thin film is simultaneously carried out by matching magnetron sputtering with an ion beam assisted deposition method, the process is simple, and the controllability and operability are high; two main and auxiliary target materials, namely ZnS and a carbon target, are co-sputtered, and meanwhile, the auxiliary target material can be flexibly controlled to control the content of carbon doped in the thin film, so that the electrical property of the light-emitting thin film is adjusted; the ZnS target adopts direct current to perform film plating, and the prepared film is high in compactness and good in crystallization quality; the ion beam assisted deposition method is adopted for carbon doping plating, and the carbon content can be accurately controlled; therefore, the method is simple in process and high in controllability and operability, and the prepared thin film is excellent in electrical property and has important application value in the technical field of thin film preparation.

The present invention belongs to the field of liquid crystal technology, and specifically relates to a composite conductive ink, a transparent conductive film and a preparation method thereof. A composite conductive ink, comprising: nano silver wire ink and nano copper wire ink, wherein the nano silver wire ink accounts for 85-95% by volume, and the nano copper wire ink accounts for 5-15% by volume. The present invention adds a small amount of nano copper wire to the nano silver wire conductive ink, and utilizes the property that copper is more active and easily oxidized than silver, thereby well protecting the nano silver wire from oxidation, improving the oxidation resistance of the nano silver wire conductive film, and solving the problem of increased resistance of the nano silver wire conductive film after long-term light aging; and the selected nano copper wire has excellent optical and electrical properties, and will not affect the light transmittance and conductivity of the nano silver wire conductive film.

The invention belongs to the field of photovoltaic energy, and particularly relates to a carbon electrode perovskite solar cell and a preparation method thereof.The perovskite solar cell sequentially comprises FTO conductive glass, a SnO2 electron transport layer, a perovskite active layer and a carbon electrode layer from bottom to top, the heating temperature of each layer in the perovskite solar cell is 150 DEG C or below, and the heating temperature of each layer in the perovskite solar cell is 150 DEG C or below. Wherein the carbon electrode is doped with paulownia phthalocyanine; the preparation process is simple, and the obtained perovskite solar cell is stable in performance, small in hysteresis effect, low in cost and suitable for industrial production.

The invention discloses a high-strength, high-conductivity and high-wear-resistance nickel-plated short carbon fiber reinforced copper-based composite material and a preparation method thereof, and belongs to the technical field of metal-based composite materials. The preparation method comprises the following steps: carrying out surface roughening, sensitization and activation pretreatment on short carbon fibers, and then carrying out chemical nickel plating to form a nickel layer; mixing the nickel-plated short carbon fiber with oxygen-free copper zirconium CuZr0. 1 alloy powder, and carrying out cold press molding; and the copper-based composite material is subjected to rapid vacuum hot pressing sintering for 30-60 min at the temperature of 800-900 DEG C and the axial pressure of 30-50 MPa, the obtained copper-based composite material has high strength, high conductivity (80% IACS or above) and excellent wear resistance (the wear rate is smaller than or equal to 1.1 * 10 <-5 > mm < 3 > / m), and the technical problems that a traditional carbon fiber / copper-based composite material is poor in interface bonding and low in conductivity are solved. The method is suitable for high-performance conductive wear-resistant parts in the fields of aerospace, traffic rails and the like.

The invention discloses a conductive cement soil mixing pile based on industrial waste and a preparation method thereof. The conductive cement soil mixing pile based on the industrial waste is prepared from the following raw materials: carbon black pretreatment liquid, modified multi-particle-size steel slag powder, sludge soil and cement, the carbon black pretreatment liquid is obtained by performing ultrasonic treatment on carbon black, a polyoxyethylene ether dispersing agent and water; the modified multi-particle-size steel slag powder is obtained by carbonizing, ball-milling and sieving steel slag, and modifying steel slag powder of 325 meshes, 200 meshes and 80 meshes according to a mass ratio of 1: 2: 1 by using an acid treatment solution. The conductive cement-soil mixing pile based on the industrial waste prepared by the invention has excellent mechanical properties and electrical properties, is low in preparation cost, can realize sludge soil foundation reinforcement, secondary utilization of the industrial waste and social sustainable development, and effectively avoids the problems of massive waste of resources, environmental pollution and the like.

The present invention belongs to the field of electricity, and in particular to the field of H01B1 / 16, and more specifically to a conductive silver paste for the back side grid of N-type TOPCon and a preparation method thereof. The raw materials for its preparation include at least 85-95% of monodisperse spherical silver powder, 2%-3% of lead bismuth telluride main glass, 0.1-0.3% of lead boron auxiliary glass, 0.05-0.2% of silicon powder, and 2%-10% of organic adhesive. The N-type TOPCon solar cell prepared by the present invention not only has a lower contact resistance and saturation current density value, but also can improve the open circuit voltage, short circuit current, filling factor, etc., thereby improving the photoelectric conversion efficiency of the solar cell.