28results about How to "Good electrical properties" patented technology

The application provides a ferroelectric metal and a preparation method and application thereof. The ferroelectric metal of the application is composed of cubic silicon carbide crystals and doping elements doped therein, wherein the concentration of the doping elements is greater than or equal to 1*10 18 cm ‑3 The material of the application can be prepared by a chemical vapor deposition method, a high-temperature solution growth method, a solid-phase sintering method, a pulse laser deposition method and the like. Since the conductivity of metal, the switching characteristics of ferroelectric and the force-electric coupling characteristics of piezoelectric are integrated, the ferroelectric metal of the application has great application value in the fields of high-performance transducers, high-sensitivity sensors, low-power micro-electro-mechanical system (MEMS), next-generation multifunctional electronic devices and the like.

The invention discloses a high-strength, high-conductivity and high-wear-resistance nickel-plated short carbon fiber reinforced copper-based composite material and a preparation method thereof, and belongs to the technical field of metal-based composite materials. The preparation method comprises the following steps: carrying out surface roughening, sensitization and activation pretreatment on short carbon fibers, and then carrying out chemical nickel plating to form a nickel layer; mixing the nickel-plated short carbon fiber with oxygen-free copper zirconium CuZr0. 1 alloy powder, and carrying out cold press molding; and the copper-based composite material is subjected to rapid vacuum hot pressing sintering for 30-60 min at the temperature of 800-900 DEG C and the axial pressure of 30-50 MPa, the obtained copper-based composite material has high strength, high conductivity (80% IACS or above) and excellent wear resistance (the wear rate is smaller than or equal to 1.1 * 10 <-5 > mm < 3 > / m), and the technical problems that a traditional carbon fiber / copper-based composite material is poor in interface bonding and low in conductivity are solved. The method is suitable for high-performance conductive wear-resistant parts in the fields of aerospace, traffic rails and the like.

This invention provides an extruder for wires with smooth and uniform heating, comprising a body, a die head, a neck, a barrel, a heater, a conduit, and a pump. The body encloses the barrel, which contains a screw. The body includes a heating zone and an extrusion zone. The heater is connected to the heating zone via a conduit. The die head is connected to the extrusion zone via the neck. The heating zone has a feed inlet, and the die head has a discharge outlet. Silicone oil is introduced into the heater, and the heated silicone oil is pumped into the heating zone. Existing silicone oil in the heater is pumped back to the heater, thus achieving constant temperature heating. The temperature fluctuation within the barrel is within 1°C, resulting in more uniform material heating, more stable plasticization, and a more stable material flow. This reduces common problems such as old rubber and bulging, leading to higher precision products with better electrical performance and appearance, offering significant advantages in the production of high-frequency data cables.

The application belongs to the technical field of lithium ion batteries, and relates to a sulfide solid electrolyte composite oxide positive electrode material and a preparation method and application thereof. The positive electrode material comprises oxide positive electrode particles, a first coating layer coated on the outer side of the oxide positive electrode particles, and a second coating layer coated on the outer side of the first coating layer, wherein the first coating layer is a conductive oxide material, and the second coating layer is a sulfide solid electrolyte material. By constructing a barrier composed of the conductive oxide material between the oxide positive electrode particles and the sulfide solid electrolyte material, the application can effectively prevent the reaction between lattice oxygen released from the oxide positive electrode particles and the sulfide solid electrolyte, effectively avoid the oxidative decomposition of the sulfide solid electrolyte, and further enhance the stability of the interface structure; meanwhile, a good electronic transport channel is formed, which is conducive to the transport of electrons and ions. The positive electrode material has excellent electrical properties and wide market application prospects.

This invention relates to the field of photovoltaic cable manufacturing technology, and more particularly to a solar photovoltaic cable and its manufacturing process. The process includes: processing a tin-plated cable core according to a pre-process; extruding the tin-plated cable core through an extruder with preset extrusion parameters to perform a first functional layer extrusion; pre-cooling the extruded cable; determining a second preset pulling speed for the second functional layer extrusion process based on a first excess value when the functionality is deemed unqualified, and further determining a second preset pulling speed based on a first excess value when the functionality is deemed unqualified after the pre-cooling stage; and adjusting the cooling temperature based on a second excess value when the cooling is deemed unqualified, and based on a second excess value when the cooling is deemed unqualified, after the cooling is deemed unqualified. This invention can comprehensively assess the manufacturing quality of photovoltaic cables from multiple dimensions and deeply refine it from a single dimension, and automatically feed back and adjust the parameters for manufacturing photovoltaic cables to improve the stability of the performance and the stability of the manufacturing process of photovoltaic cables.

This application relates to the field of oxide target technology, specifically disclosing an ITZO target and its preparation method. The preparation method of the ITZO target includes the following steps: applying an In-containing... 3+ Sn 4+ Zn 2+ A complexing agent is added to the solution to obtain a mixed solution; the mixed solution is then added dropwise to an ammonia solution and aged to obtain a precursor precipitate; the precursor precipitate is then subjected to spray pyrolysis, cold isostatic pressing, and warm isostatic pressing to obtain an ITZO preform; the ITZO preform is then subjected to programmed temperature calcination and programmed temperature cooling to obtain an ITZO target. This application obtains a uniformly composed and highly dense ITZO target by dynamically controlling the composition of the mixed gas during the programmed temperature cooling process through two static pressing treatments; using this target, a transparent conductive film with high visible light transmittance and excellent electrical properties can be prepared by sputtering, solving the technical problems of uneven composition, low density, and poor quality of sputtered films in existing targets.

The application relates to the field of crystal growth, and discloses a gallium oxide single crystal growth device and a growth method.The device comprises a furnace body crucible main body, a crucible cover, a support, a mold and a heater; the crucible main body is arranged in the heater; the bottom of the crucible main body is connected with a rotating device used for driving the crucible main body to rotate; the crucible cover is arranged above the crucible main body; the support is used for abutting and supporting the crucible cover, so that a first gap is formed between the crucible cover and the crucible main body; the mold is arranged in the crucible main body and is fixedly connected with the crucible cover; a second gap is formed between the bottom surface of the mold and the inner bottom surface of the crucible main body; the first gap and the second gap are used for keeping the crucible cover and the mold stationary when the crucible main body rotates, so that the stability of crystal growth is ensured, the heating of the melt and the distribution of doped impurities are more uniform, the shoulder quality in the crystal growth process is improved, and the electrical performance of the doped crystal is better.

This invention provides an aqueous coating composition capable of forming a fluoropolymer coating layer with excellent electrical and surface properties and good adhesion. The coating composition contains two or more fluoropolymers, characterized in that at least one fluoropolymer has a functional group number relative to the number of functional groups per 10... 6 The coating composition contains a fluoropolymer (I) with a main chain of 30 to 1000 carbon atoms, and also contains inorganic fillers, surfactants and liquid media.

This invention provides a method for preparing silicon carbide using waste granite powder and conductive carbon black, comprising the following steps: S1, mixing waste granite powder and conductive carbon black evenly to form a mixture; S2, ball milling the mixture and sieving it to obtain a refined mixture; S3, placing the refined mixture into a Joule apparatus and sintering it to prepare a multiphase composite powder; S4, calcining the multiphase composite powder at high temperature and then alkali washing to obtain silicon carbide powder. This invention achieves high-value recycling of waste granite powder, solving the problems of high energy consumption and long cycle time in traditional silicon carbide preparation processes, and avoiding the problems of large land occupation and significant pollution from the accumulation of building material waste. This invention aligns with the concept of green and low-carbon development, turning waste into treasure. By designing different raw material ratios and sintering parameters, different types of silicon carbide products can be prepared, creating economic benefits while controlling pollution.

The application discloses a back contact cell and a preparation method, relates to the field of solar cells, and aims to improve current collection capability. The back contact cell comprises a silicon substrate, a first conductive area and a second conductive area on the back surface of the silicon substrate, and an edge conductive area arranged on one side edge or opposite two side edges of the back surface; wherein the edge conductive area comprises a first area extending along a first direction and at least one concave area extending along a second direction; one end of each concave area intersects with the first area, and the other end is connected with the first conductive area or the second conductive area which is not adjacent to the concave area and is closest to the concave area; a first seed layer is electrically connected with the first conductive area; a second seed layer is electrically connected with the second conductive area; and a third seed layer is electrically connected with the first area and the concave area, and is electrically connected with the seed layer of the first conductive area or the second conductive area which is not adjacent to the third seed layer and is closest to the third seed layer.

This invention discloses a lignin-reinforced self-healing conductive elastomer, its preparation method, and its applications. The preparation method includes the following steps: mixing lipoic acid, lignin, a metal acid salt ionic liquid, and an organic crosslinking agent, followed by heat treatment to obtain the lignin-reinforced self-healing conductive elastomer; the mass ratio of lipoic acid to lignin is 1:(0.025~0.055). The lignin-reinforced self-healing conductive elastomer of this invention not only possesses good tensile strength but also exhibits excellent strain, temperature, and light-induced multimodal sensing properties. Furthermore, its electrical and tensile properties after damage also demonstrate excellent self-healing capabilities. In addition, both the polylipoic acid and lignin used in this invention are bio-based materials, avoiding the use of petroleum-based materials, making it environmentally friendly.

The application provides a back plate, a preparation method thereof and a photovoltaic module, relates to the photovoltaic technical field, and the back plate is used for the photovoltaic module, and the back plate comprises a basalt fiber layer and a resin layer, wherein the basalt fiber layer is at least two layers, and the resin layer is arranged between the two basalt fiber layers, or the resin layer is at least two layers, and the basalt fiber layer is arranged between the two resin layers. The basalt fiber layer and the resin layer provided by the application are arranged alternately, and in the case of the same thickness, the heat insulation and compression resistance effect is higher than that of the conventional scheme of one layer of basalt fiber layer superimposed on one layer of resin layer.

The invention relates to the technical field of capacitor electrode material preparation, and particularly discloses a high-performance coal pitch-based supercapacitor electrode material and a preparation method thereof. The preparation method of the electrode material comprises the following steps: mixing asphalt, an activating agent and a template agent, and carrying out ball milling treatment to obtain a first mixture; and carrying out heat treatment on the first mixture in an inert atmosphere, and then washing with a weak acid solution to obtain the electrode material with uniform pores. The activating agent and the template agent are synergistically mixed with the asphalt for pore forming, so that the pore structure of the electrode material can be accurately regulated and controlled, and the electrode material with uniform pore distribution and excellent electrical properties is obtained; meanwhile, the preparation method disclosed by the invention has the characteristics of simple process and environmental friendliness. The technical problems that an existing coal pitch-based capacitor carbon material is small in specific surface area, uneven and uncontrollable in pore structure, tedious in preparation process and not environmentally friendly are solved.

This invention provides a lithium-rich manganese-based cathode material, a preparation method, a battery cathode, and a battery, comprising: mixing citric acid, a lithium source, a nickel source, a cobalt source, a manganese source, and a dopant source to form a first mixed solution, wherein the dopant source is composed of a sodium source and / or a potassium source; drying the first mixed solution after the reaction to obtain a first precursor; sintering the first precursor to obtain a first powder; mixing the first powder with citric acid and then sintering to obtain the lithium-rich manganese-based cathode material.

The application relates to a preparation method and application of a ZIF-8 / Thi / Au-based ratio type electrochemical aptamer sensor, and ZIF-8 / Thi / Au with a signal label function is combined with a catalytic hairpin assembly strategy for the first time to detect mycotoxins, signal amplification is effectively realized, and the detection sensitivity is improved. ZIF-8 / Thi / Au composite materials are synthesized first, and a signal label is prepared by combining a hairpin chain 2. When aflatoxin B1 exists, aflatoxin B1 is combined with an aptamer chain, a complementary chain that is dropped off opens a hairpin chain 1, catalytic hairpin assembly is carried out after a signal label is added, the signal label is combined on the electrode surface, the electrode surface has a high resistance value, and a buffer solution containing [Fe(CN)6] 3‑ / 4‑ is used to carry out electrochemical measurement by using a square wave voltammetry method, a higher ZIF-8 / Thi / Au signal and a lower [Fe(CN)6] 3‑ / 4 signal can be obtained. When no aflatoxin B1 exists, the changes of the two electrochemical signals are opposite. Finally, an electrochemical aptamer sensor for detecting aflatoxin B1 is obtained by the change of the ZIF-8 / Thi / Au and [Fe(CN)6] 3‑ / 4 signal ratio.

A method for forming a semiconductor structure, the method comprising: providing a substrate comprising a first region and a second region, and forming an interlayer dielectric layer having a gate opening on the substrate; forming a shielding layer covering the gate opening of the second region and exposing the gate opening of the first region, the shielding layer occupying the gate opening of the second region, so that in the step of forming a first work function material layer in the gate opening of the first region, the first work function material layer is formed on the shielding layer, and in the process of removing the shielding layer and the first work function material layer on the shielding layer, the removal process window of the first work function material layer of the second region is larger, and it is not easy to have residues, and the removal efficiency is higher, which is beneficial to improve the yield; in addition, the removal process window of the shielding layer is larger, and it is not easy to have residues, the second work function layer can better adjust the threshold voltage of the transistor of the second region, reduce the parasitic capacitance in the transistor of the second region, so that the electrical performance of the semiconductor structure is better.

The embodiment of the invention provides a storage array and a preparation method thereof, a memory and electronic equipment, and relates to the technical field of electronic equipment. The memory array includes a stacked structure, a plurality of channel layers, a spacer portion, and a support portion. The stacked structure comprises a plurality of stacked first electrode layers; the stacked structure is provided with an open groove, the open groove comprises an open hole and a plurality of sub-grooves, the open hole penetrates through the multiple first electrode layers, the sub-grooves are formed in the side wall of the open hole, and the sub-grooves and the first electrode layers are arranged on the same layer. And the channel layer is arranged on the inner wall of the sub-groove and is in contact with the first electrode layer. The spacing part is arranged in the sub-groove and at least arranged on the surface, away from the first electrode layer, of the channel layer. The supporting part is at least filled in the open hole, and the interval part is arranged between the supporting part and the channel layer. The material of the spacing part is different from that of the supporting part, and the hydrogen content of the spacing part is smaller than that of the supporting part. According to the embodiment of the invention, the damage to the channel layer in the storage array is reduced, and the electrical performance of the storage array is optimized.

The invention discloses a power semiconductor structure, a preparation method thereof and electronic equipment, and relates to the technical field of semiconductors. The power semiconductor structure comprises a circuit board, a power chip and a planar capacitor. The circuit board comprises a plurality of conductive layers which are arranged in a stacked mode. The power chip is embedded in the circuit board. The planar capacitor is embedded in the circuit board and is stacked with the plurality of conductive layers; the planar capacitor is electrically connected with the power chip. The power semiconductor structure is relatively high in integration level and relatively small in parasitic inductance, so that the power semiconductor structure has relatively high power density.

The application provides a square battery and an electric device, and belongs to the technical field of battery manufacturing. The square battery comprises a cell unit, a positive cover plate, a negative cover plate and a shell. The cell unit comprises a cell group, the cell group comprises a plurality of cell monomers arranged along the thickness direction of the cell monomers and insulatedly connected, in the height direction of the cell monomers, the positive and negative tabs in each cell monomer are respectively protruded at two ends, and the positive and / or negative tabs on any two adjacent cell monomers in the thickness direction are staggered distributed in the length direction of the cell monomers; in the height direction, the positive cover plate and the negative cover plate are oppositely distributed, the plurality of positive tabs are connected in parallel with the positive pole, and the plurality of negative tabs are connected in parallel with the negative pole; and the two ends of the shell are respectively sealedly connected with the positive cover plate and the negative cover plate. The square battery can effectively solve the problems of inconvenient welding and easy series welding of the tabs in the welding process.

The invention provides a preparation method of a solid-state fiber flexible battery, the solid-state fiber flexible battery and application, and relates to the field of flexible batteries. A coaxial wet spinning technology is innovatively introduced into manufacturing of the solid fiber flexible battery, a coaxial fiber structure comprising the positive electrode, the solid electrolyte and the negative electrode is prepared through a one-time forming technology, and the battery has excellent mechanical flexibility, high energy density and good safety; the energy requirements of wearable equipment and flexible electronics in the future can be met; the flexible battery has remarkable technical innovation and industrial application value in the technical field of flexible batteries.

The application discloses a method for manufacturing photovoltaic BC cells by using inkjet printing hot melt ink, which comprises the following steps: step 1, silicon wafer pretreatment; step 2, hot melt ink preparation; step 3, inkjet printing equipment debugging; step 4, P area mask manufacturing; step 5, etching back process for manufacturing P area; step 6, removing P area mask; step 7, N area mask manufacturing; step 8, etching back process for manufacturing N area; step 9, high-temperature activation and doping optimization; and step 10, subsequent processing. The method can overcome the problems of complex process, high cost and poor mask stability in the prior art, and achieve the goals of simplifying the process, reducing the cost, improving the cell performance and production efficiency.

The invention discloses a titanate self-assembly monomolecular passivation layer and a preparation method and application thereof, and belongs to the technical field of photovoltaic cells. A di (triethanolamine) titanium diisopropyl ester self-assembly molecular layer is introduced to the surface of a nickel oxide film, and a stable molecular-level buffer interface is constructed between nickel oxide and a perovskite light absorption layer. Titanate molecules can be subjected to coordination or condensation reaction with hydroxyl on the surface of nickel oxide, and interact with unsaturated nickel sites through a polydentate triethanolamine structure, so that surface hydroxyl defects and chemical activity of high-valence nickel ions are inhibited at the same time, and interface defect state density and non-radiative recombination loss are remarkably reduced. The passivation layer can be formed under a mild condition, the process is simple and is highly compatible with the preparation process of a trans-type device, and the photoelectric conversion efficiency and the long-term operation stability of the trans-type perovskite solar cell can be synchronously improved on the premise that the structural complexity of the device is not increased.

The application belongs to the technical field of electronic devices and neuromorphic computing, and discloses a photoelectric synapse device based on an ITZO / SnO2 heterojunction and a preparation method and application thereof. The photoelectric synapse device comprises, from bottom to top, a substrate, a bottom electrode, a SnO2 film layer, an ITZO film layer and a top electrode, wherein the SnO2 film layer and the ITZO film layer form a heterojunction. The ITZO film layer and the SnO2 film layer are both prepared by a solution method. The photoelectric synapse device of the application not only successfully simulates a plurality of key biological synapse plasticities, but also innovatively applies it to actual scenes such as image encryption and decryption and image high-fidelity reconstruction.

The application discloses a PVD device and process method integrating evaporation and sputtering functions. The device creatively adopts a "vacuum sealed tunnel" architecture, linearly connecting multiple chambers such as etching, sputtering and evaporation, to ensure that the substrate is not exposed to the atmosphere throughout the process. The core includes a liftable dynamic sealing evaporation source module, which effectively solves the pollution problem of evaporation process on integrated equipment through the coordinated timing action of bellows connection, lifting mechanism and shielding plate. The device is equipped with a full-automatic control system, realizing one-key completion of complex processes. The application creates a process condition for replacing high-stress sputtering with low-stress evaporation through integration, which is particularly suitable for preparing high-performance solar cell back electrodes, and has the outstanding advantages of eliminating pollution, optimizing stress, improving yield and efficiency.

This invention provides a field-effect transistor (FET) gas sensor and its fabrication method, comprising: providing a clean substrate; forming a dielectric layer on the substrate; forming a source and a drain on the dielectric layer; forming a two-dimensional material layer between the source and drain; and forming an organic layer on the source, drain, and two-dimensional material layer. The heterojunction channel formed by the two-dimensional material layer and the organic layer enables the gas sensor to achieve stable and sensitive gas sensing. Simultaneously, by using the substrate as the bottom gate, in conjunction with the source and drain, a gate-controlled gas response function can be achieved. Thus, the gas sensor possesses excellent electrical performance and operational stability while exhibiting superior gas response sensitivity, solving the problem of how to improve the sensitivity and operational stability of gas sensors.

The invention discloses a manufacturing method of a three-dimensional system chip based on metal bump interconnection, and the method comprises the steps: a female core structure, the surface of which is provided with a first original welding pad array; the at least one sub-core particle is stacked on the mother core structure in an inverted buckling manner, and the surface of the sub-core particle is provided with a second original welding pad array; the re-wiring metal column structure is arranged on the surface of the mother core structure and / or the sub core particles, and the re-wiring metal column structure comprises a re-wiring layer electrically connected with the first original welding pad array and / or the second original welding pad array; the dielectric layer is formed on the rewiring layer; the metal column penetrates through the dielectric layer and is electrically connected with the rewiring layer below the dielectric layer; wherein a metal column or a first original welding pad array is arranged on the surface of the female core structure. By introducing an innovative structure combining the prefabricated metal columns and post-growth interconnection, the wiring flexibility, reliability and integration density of three-dimensional interconnection are remarkably improved, and the method is particularly suitable for a multi-core-particle heterogeneous integrated system.

The utility model discloses a ceramic plate slag scraping jig which comprises a jig body, the top face of the jig body is a bearing plane used for supporting and placing a ceramic plate, a plurality of air blowing cavities and a plurality of adsorption holes are formed in the bearing plane in a concave mode, an air inlet chamber and an air exhaust channel are arranged in the jig body, the air blowing cavities are all communicated with the air inlet chamber, and the adsorption holes are communicated with the air exhaust channel. And the plurality of adsorption holes are communicated with the air exhaust channel. The ceramic plate is firmly adsorbed and fixed on the bearing plane by cooperatively utilizing the extraction opening, the extraction channel and the plurality of adsorption holes, airflow is output from each through hole of the ceramic plate by cooperatively utilizing the arrangement of the air inlet, the air inlet chamber and the plurality of air blowing cavities, and residues can be effectively prevented from falling into the through holes by the airflow in the residue scraping process of the ceramic plate, so that the residue scraping efficiency is improved, and the service life of the ceramic plate is prolonged. The problem that residues / burrs enter the hole is fundamentally solved, the hole blocking phenomenon is completely eradicated, it is guaranteed that the through hole can be fully filled in the subsequent copper plating process of the through hole, the resistance value cannot be poor or even open circuit cannot occur, and the excellent electrical property is achieved.

This application discloses a thin film and its preparation method, a light-emitting device, and a display device. The material of the thin film includes metal oxide nanoparticles, and multiple metal oxide nanoparticles are interlocked to form an interlocking body. The percentage w of the number of interlocking bodies to the total number of metal oxide nanoparticles in the thin film satisfies 0 ≤ w ≤ 25%. The thin film proposed in this application has a smaller number of interlocking bodies, thereby reducing the interparticle gaps caused by the interlocking bodies, improving the compactness of the thin film, and obtaining a thin film with better electrical properties.