The invention relates to the technical field of solar cells, in particular to a preparation method of a
perovskite thin film, which comprises the following steps: sequentially carrying out ultrasonic cleaning on etched transparent conductive glass by using a preset solution,
drying in a
forced air drying oven, and carrying out
ultraviolet ozone treatment to obtain a transparent
conductive oxide substrate; placing the transparent
conductive oxide substrate in a glove box in a
nitrogen atmosphere to prepare a
hole transport layer; adding the
perovskite precursor material into a corresponding
solvent in a preset proportion, and then stirring and oscillating to obtain a
perovskite precursor solution; and spin-
coating the perovskite precursor solution on the
hole transport layer by using a spin coater, dropwise adding an anti-
solvent during spin-
coating, and placing the obtained perovskite light absorption film layer on a heating stage for annealing after spin-
coating is finished, the insulation
metal oxide nanoparticles and the self-
assembly monomolecular material are doped in the anti-
solvent, so that the absorption of incident light by the perovskite thin film is improved, and the defect of the perovskite thin film at the
grain boundary is passivated.