Interface regulation and control method of perovskite solar cell, trans-perovskite solar cell and preparation method of trans-perovskite solar cell

Abstract

The invention provides an interface regulation and control method of a perovskite solar cell, a trans-perovskite solar cell and a preparation method of the trans-perovskite solar cell. The interface regulation and control method comprises the following steps: arranging a first metal oxide nanoparticle layer between a hole transport layer and a transparent conductive film glass layer; and a second metal oxide nanoparticle layer is arranged between the hole transport layer and the perovskite light absorption layer. The trans-perovskite solar cell comprises a transparent conductive film glass layer, a first metal oxide nanoparticle layer, a hole transport layer, a second metal oxide nanoparticle layer, a perovskite light absorption layer, an electron transport layer and an electrode. According to the interface regulation and control method provided by the invention, the surface wettability of the hole transport layer is improved, the arrangement uniformity of the hole transport layer is improved, and finally the photoelectric conversion efficiency of the perovskite solar cell is improved.

Description

Technical Field

[0001] The present invention relates to an interface regulation method for perovskite solar cells, a reverse perovskite solar cell and a preparation method thereof, belonging to the technical field of perovskite solar cells. Background Art

[0002] Perovskite solar cells are a new type of photovoltaic material, with the advantages of high efficiency, low cost and adjustable bandgap. After more than a decade of rapid development, the efficiency of perovskite single-junction cells has exceeded 26%, and the efficiency of crystalline silicon / perovskite tandem cells based on wide-bandgap perovskite has reached 33.9%.

[0003] The basic structure of perovskite solar cells is a multi-layer structure, including a normal n-i-p structure and a reverse p-i-n structure. Among them, the reverse structure has received extensive attention and research from academia and industry due to its advantages such as simple preparation process, low-temperature preparation, low hysteresis coefficient, and compatibility with tandem cell structures. The structure of reverse perovskite solar cells is generally: transparent conductive thin film (TCO) glass layer / hole transport layer / perovskite light-absorbing layer / electron transport layer / electrode. Currently, high-efficiency perovskite cells are based on small-area devices of ~0.1 cm 2 , and are prepared by solution spin coating method. Industrial-grade perovskite cell modules coat perovskite solution on the hole transport layer through a slot coater.

[0004] Self-assembled monolayers are ordered arrays of organic molecules, and have become common hole transport layers for high-efficiency perovskite single-junction and tandem cells in recent years. Among them, the anchoring groups bind to the substrate, and the top functional groups regulate the surface properties, comprehensively playing an efficient hole transport role.

[0005] Self-assembled monolayers are a new generation of hole transport materials for reverse devices after poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) and nickel oxide (NiO x )). Due to the small molecule monolayer structure, the hole extraction and transport efficiency are improved through the charge tunneling effect. The surface wettability of self-assembled monolayers is a key parameter affecting the subsequent perovskite film formation, especially when the area of perovskite cells is enlarged. However, the functional groups on the surface of self-assembled monolayers often lead to poor wettability of perovskite films. In addition, due to single-molecule anchoring assembly, the morphology of the obtained hole transport layer depends on the state of the TCO substrate. Commonly used TCO substrates have relatively large roughness (about 10 - 100 nm), resulting in poor flatness of the single-molecule hole transport layer, disordered molecular orientation, and affecting the charge transport uniformity.

[0006] Al-Ashouri et al. improved the surface wettability of the hole transport layer by introducing a second component containing hydrophilic groups into the single-molecule hole transport layer, such as hexane-1,6-diphosphate (https: / / doi.org / 10.1021 / acsenergylett.2c02629), but this would reduce the single-molecule anchoring sites and the hole transport ability. In the prior art, there are also solutions to modify the surface wettability of the single-molecule hole transport layer by using organic single-molecule hydrophobic carbazole head groups, but the operation of molecular structure modification is complex and the industrial application prospect is not good. There are few reports in the prior art on solving the problem that the surface roughness of the TCO substrate affects the growth and arrangement of the single-molecule hole transport layer.

[0007] Currently, there are still the following two technical problems in the prior art. First, the surface wettability of the organic self-assembled monolayer is poor, and the perovskite solution is difficult to spread quickly and naturally, resulting in incomplete coverage of the perovskite light-absorbing layer, causing battery leakage and reducing the photoelectric conversion efficiency of the battery. Second, the organic self-assembled monolayer is anchored on the rough and undulating TCO substrate, resulting in the accumulation of the organic single-molecule layer at the bottom of the substrate and the thinning of the organic single-molecule layer at the protrusions of the substrate, ultimately affecting the hole transport efficiency and the photoelectric conversion efficiency of the battery. Summary of the Invention

[0008] To solve the above technical problems, the object of the present invention is to provide an interface regulation method for perovskite solar cells. The interface regulation method provided by the present invention can improve the surface wettability of the hole transport layer and can improve the arrangement uniformity of the hole transport layer.

[0009] Another object of the present invention is to provide a reverse perovskite solar cell and a preparation method thereof. The reverse perovskite solar cell provided by the present invention has a high photoelectric conversion efficiency.

[0010] To achieve the above object, the first aspect of the present invention provides an interface regulation method for perovskite solar cells, which includes the following steps:

[0011] A first metal oxide nanoparticle layer is provided between the hole transport layer and the transparent conductive film (TCO) glass layer;

[0012] A second metal oxide nanoparticle layer is provided between the hole transport layer and the perovskite light-absorbing layer;

[0013] Wherein, the first metal oxide nanoparticles include one or a combination of several of indium tin oxide (ITO) nanoparticles, tin oxide doped with fluorine (FTO) nanoparticles, nickel oxide (NiO) nanoparticles, etc.;

[0014] The second metal oxide nanoparticles include aluminum oxide (Al2O3) nanoparticles and / or aluminum-doped zinc oxide (AZO) nanoparticles, etc.

[0015] In the above interface regulation method of the perovskite solar cell, preferably, the particle size of the first metal oxide nanoparticles is below 30 nm, and the average particle size is 1 - 20 nm. More preferably, the particle size of the first metal oxide nanoparticles is smaller than the surface roughness of the transparent conductive thin film glass layer.

[0016] In the above interface regulation method of the perovskite solar cell, preferably, the first metal oxide nanoparticle layer fills the surface pits of the transparent conductive thin film glass layer, and the filling depth of the first metal oxide nanoparticle layer is about 10 - 100 nm.

[0017] In the above interface regulation method of the perovskite solar cell, preferably, the particle size of the second metal oxide nanoparticles is below half of the thickness of the perovskite light-absorbing layer. More preferably, the particle size of the second metal oxide nanoparticles is 50 - 100 nm.

[0018] In the above interface regulation method of the perovskite solar cell, preferably, the thickness of the highest part of the second metal oxide nanoparticle layer is 50 - 250 nm.

[0019] In the above interface regulation method of the perovskite solar cell, preferably, the surface roughness of the transparent conductive thin film glass layer is 10 - 100 nm.

[0020] In the above interface regulation method of the perovskite solar cell, preferably, the hole transport layer is a self-assembled monolayer hole transport layer.

[0021] In the above interface regulation method of the perovskite solar cell, preferably, the thickness of the hole transport layer is the thickness of a single molecule (<1 nm).

[0022] In the above interface regulation method of the perovskite solar cell, preferably, the thickness of the perovskite light-absorbing layer is 400 - 1200 nm.

[0023] The present invention provides a first metal oxide nanoparticle layer between the hole transport layer and the transparent conductive thin film (TCO) glass layer. The first metal oxide nanoparticles are metal oxide nanoparticles with conductive ability and particle sizes smaller than the surface roughness of the TCO glass layer. They are filled in the surface pits of the transparent conductive thin film glass layer, reducing the roughness of the TCO glass layer, flattening the surface of the TCO thin film, facilitating the orderly growth of the self-assembled monolayer hole transport layer, and making its arrangement uniform. Moreover, the present invention provides a second metal oxide nanoparticle layer between the hole transport layer and the perovskite light-absorbing layer. The second metal oxide nanoparticles are metal oxide nanoparticles with low conductivity, forming an intermittent island-like coverage therebetween, improving the surface wettability of the self-assembled monolayer hole transport layer, and enhancing the coverage of the perovskite light-absorbing layer. Therefore, the present invention ultimately improves the photoelectric conversion efficiency of the perovskite solar cell. The interface regulation method of the perovskite solar cell of the present invention is applicable to perovskite single-junction or tandem solar cells, such as inverted perovskite solar cells, silicon / perovskite tandem solar cells, and all-perovskite tandem solar cells, etc.

[0024] The second aspect of the present invention provides an inverted perovskite solar cell, which sequentially includes, from bottom to top: a transparent conductive thin film (TCO) glass layer, a first metal oxide nanoparticle layer, a hole transport layer, a second metal oxide nanoparticle layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode;

[0025] Among them, the first metal oxide nanoparticles include one or a combination of several of indium tin oxide (ITO) nanoparticles, fluorine-doped tin oxide (FTO) nanoparticles, nickel oxide (NiO) nanoparticles, etc.;

[0026] The second metal oxide nanoparticles include aluminum oxide (Al2O3) nanoparticles and / or aluminum-doped zinc oxide (AZO) nanoparticles, etc.

[0027] In the above inverted perovskite solar cell, preferably, the particle size of the first metal oxide nanoparticles is below 30 nm, and the average particle size is 1 - 20 nm. More preferably, the particle size of the first metal oxide nanoparticles is smaller than the surface roughness of the transparent conductive thin film glass layer.

[0028] In the above inverted perovskite solar cell, preferably, the first metal oxide nanoparticle layer is filled in the surface pits of the transparent conductive thin film glass layer, and the filling depth of the first metal oxide nanoparticle layer is about 10 - 100 nm.

[0029] In the above-mentioned inverted perovskite solar cell, preferably, the particle size of the second metal oxide nanoparticles is less than half of the thickness of the perovskite light-absorbing layer. More preferably, the particle size of the second metal oxide nanoparticles is 50-100 nm.

[0030] In the above-mentioned inverted perovskite solar cell, preferably, the thickness at the highest point of the second metal oxide nanoparticle layer is 50-250 nm.

[0031] In the above-mentioned inverted perovskite solar cell, preferably, the surface roughness of the transparent conductive thin film glass layer is 10-100 nm.

[0032] In the above-mentioned inverted perovskite solar cell, preferably, the hole transport layer is a self-assembled monolayer hole transport layer.

[0033] In the above-mentioned inverted perovskite solar cell, preferably, the thickness of the hole transport layer is the thickness of a single layer of molecules (<1 nm).

[0034] In the above-mentioned inverted perovskite solar cell, preferably, the thickness of the perovskite light-absorbing layer is 400-1200 nm.

[0035] In the above-mentioned inverted perovskite solar cell, preferably, the thickness of the electron transport layer is 10-30 nm.

[0036] According to a specific embodiment of the present invention, preferably, the inverted perovskite solar cell further includes: a hole blocking layer disposed between the electron transport layer and the electrode.

[0037] In the above-mentioned inverted perovskite solar cell, preferably, the thickness of the hole blocking layer is 4-8 nm.

[0038] In the above-mentioned inverted perovskite solar cell, preferably, the thickness of the electrode is 50-200 nm.

[0039] The third aspect of the present invention provides a method for preparing the above-mentioned inverted perovskite solar cell, which includes the following steps:

[0040] (1) Prepare a first metal oxide nanoparticle layer on a transparent conductive thin film (TCO) glass;

[0041] (2) Prepare a hole transport layer on the first metal oxide nanoparticle layer;

[0042] (3) Prepare a second metal oxide nanoparticle layer on the hole transport layer;

[0043] (4) Prepare a perovskite light-absorbing layer on the second metal oxide nanoparticle layer;

[0044] (5) Prepare an electron transport layer on the perovskite light-absorbing layer;

[0045] (6) Prepare an electrode on the electron transport layer to obtain the inverted perovskite solar cell;

[0046] Among them, the first metal oxide nanoparticles include one or a combination of several of indium tin oxide (ITO) nanoparticles, fluorine-doped tin oxide (FTO) nanoparticles, nickel oxide (NiO) nanoparticles, etc.;

[0047] The second metal oxide nanoparticles include aluminum oxide (Al2O3) nanoparticles and / or aluminum-doped zinc oxide (AZO) nanoparticles, etc.

[0048] In the above preparation method, preferably, step (6) further includes: preparing a hole blocking layer on the electron transport layer, and then preparing an electrode on the hole blocking layer to obtain the inverted perovskite solar cell.

[0049] The technical solution of the present invention has at least the following beneficial effects:

[0050] On the one hand, by setting a first metal oxide nanoparticle layer between the rough and undulating TCO glass layer and the hole transport layer, the present invention improves the flatness of the interface between the TCO glass layer and the hole transport layer, promotes the efficient and regular arrangement of the self-assembled monolayer hole transport layer, and improves the hole transport ability. On the other hand, by setting a second metal oxide nanoparticle layer between the hole transport layer and the perovskite light-absorbing layer, the present invention improves the surface wettability of the self-assembled monolayer hole transport layer, improves the coverage of the perovskite light-absorbing layer, and avoids the occurrence of battery leakage problems. Therefore, the present invention finally improves the photoelectric conversion efficiency of the perovskite solar cell. In addition, the present invention also has the advantages of simple operation and low cost, and has good industrial application prospects. Specific Embodiments

[0051] In order to have a clearer understanding of the technical features, objectives, and beneficial effects of the present invention, the technical solution of the present invention will be described in detail below, but it should not be construed as a limitation on the implementable scope of the present invention.

[0052] The first aspect of the present invention provides a method for interfacial regulation of a perovskite solar cell, which includes the following steps:

[0053] Set a first metal oxide nanoparticle layer between the hole transport layer and the transparent conductive oxide (TCO) glass layer;

[0054] A second metal oxide nanoparticle layer is provided between the hole transport layer and the perovskite light-absorbing layer;

[0055] Among them, the first metal oxide nanoparticles include one or a combination of several of indium tin oxide (ITO) nanoparticles, fluorine-doped tin oxide (FTO) nanoparticles, nickel oxide (NiO) nanoparticles, etc.;

[0056] The second metal oxide nanoparticles include aluminum oxide (Al2O3) nanoparticles and / or aluminum-doped zinc oxide (AZO) nanoparticles, etc.

[0057] The second aspect of the present invention provides a reverse perovskite solar cell, which sequentially includes from bottom to top: a transparent conductive thin film (TCO) glass layer, a first metal oxide nanoparticle layer, a hole transport layer, a second metal oxide nanoparticle layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode;

[0058] Among them, the first metal oxide nanoparticles include one or a combination of several of indium tin oxide (ITO) nanoparticles, fluorine-doped tin oxide (FTO) nanoparticles, nickel oxide (NiO) nanoparticles, etc.;

[0059] The second metal oxide nanoparticles include aluminum oxide (Al2O3) nanoparticles and / or aluminum-doped zinc oxide (AZO) nanoparticles, etc.

[0060] In some specific embodiments, the particle size of the first metal oxide nanoparticles is below 30 nm, and the average particle size is 1-20 nm. Preferably, the particle size of the first metal oxide nanoparticles is smaller than the surface roughness of the transparent conductive thin film glass layer.

[0061] In some specific embodiments, the first metal oxide nanoparticle layer fills the surface pits of the transparent conductive thin film glass layer, and the filling depth of the first metal oxide nanoparticle layer is about 10-100 nm. The filling depth of the first metal oxide nanoparticle layer is preferably the same as the surface roughness of the transparent conductive thin film, so as to fill the depressions on the surface of the transparent conductive thin film without accumulating into a relatively thick layer.

[0062] In some specific embodiments, the first metal oxide nanoparticle layer is formed in the following manner: a first metal oxide nanoparticle dispersion is spin-coated on a transparent conductive thin film glass, and after annealing treatment, the first metal oxide nanoparticle layer is obtained. Among them, preferably, the concentration of the first metal oxide nanoparticles in the first metal oxide nanoparticle dispersion is 0.1-1 wt.%. Preferably, the rotation speed of the spin-coating is 3000-8000 rpm, and the time is 20-60 s. Preferably, the temperature of the annealing treatment is 80-150 °C, and the time is 5-20 min.

[0063] In some specific embodiments, the solvent in the first metal oxide nanoparticle dispersion includes but is not limited to: isopropanol and / or ethanol, etc.

[0064] In some specific embodiments, the particle size of the second metal oxide nanoparticles is less than half of the thickness of the perovskite light-absorbing layer. Preferably, the particle size of the second metal oxide nanoparticles is 50-100 nm.

[0065] In some specific embodiments, the thickness of the highest part of the second metal oxide nanoparticle layer is 50-250 nm. The second metal oxide nanoparticle layer is mainly used to improve the wettability of the self-assembled monolayer hole transport layer. Its thickness is preferably such that it does not accumulate into a relatively thick layer. The second metal oxide nanoparticle layer is in a discontinuous island shape, and the thickness of the highest part of its cluster deposition is 50-250 nm.

[0066] In some specific embodiments, the second metal oxide nanoparticle layer is formed in the following manner: a second metal oxide nanoparticle dispersion is spin-coated on the hole transport layer, and after annealing treatment, the second metal oxide nanoparticle layer is obtained. Among them, preferably, the concentration of the second metal oxide nanoparticles in the second metal oxide nanoparticle dispersion is 0.1-2 wt.%. Preferably, the rotation speed of the spin-coating is 3000-8000 rpm, and the time is 20-60 s. Preferably, the temperature of the annealing treatment is 50-100 °C, and the time is 5-10 min.

[0067] In some specific embodiments, the solvent in the second metal oxide nanoparticle dispersion includes but is not limited to: isopropanol and / or ethanol, etc.

[0068] In some specific embodiments, the surface roughness of the transparent conductive thin film glass layer is 10-100 nm.

[0069] In some specific embodiments, the transparent conductive thin film glass layer includes glass and a transparent conductive thin film provided on the surface of the glass.

[0070] In some specific embodiments, the material of the transparent conductive film includes one or a combination of several of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), etc.

[0071] In some specific embodiments, the thickness of the glass is 0.5 - 10 mm.

[0072] In some specific embodiments, the thickness of the transparent conductive film is 50 - 500 nm.

[0073] In some specific embodiments, the hole transport layer is a self-assembled monolayer hole transport layer.

[0074] In some specific embodiments, the material of the hole transport layer includes 4PACz, Me-4PACz, 2PACz, MeO-2PACz, Br-2PACz, Cl-2PACz, or MeO-4PADBC, etc.

[0075] In some specific embodiments, the thickness of the hole transport layer is the thickness of a single molecular layer (<1 nm).

[0076] In some specific embodiments, the material of the perovskite light-absorbing layer includes ABX3, where A is an inorganic or organic or organic-inorganic hybrid cation, specifically including methylammonium (CH3NH3 + )(MA + ), formamidinium (HC(NH2)2 + )(FA + ), cesium ion (Cs + ), rubidium ion (Rb + ), etc., or a combination of several of them; B includes Pb 2+ and / or Sn 2+ etc.; X is a halogen anion, specifically including chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ), etc., or a combination of several of them.

[0077] In some specific embodiments, the thickness of the perovskite light-absorbing layer is 400 - 1200 nm.

[0078] In some specific embodiments, the material of the electron transport layer includes [6,6]-phenyl-C 61 -butyric acid methyl ester (PC61BM) and its derivatives, [6,6]-phenyl-C 71One or a combination of several of methyl butyrate (PC71BM) and its derivatives, fullerene C60 (C60) and its derivatives, fullerene C70 (C70) and its derivatives, tin oxide (SnO2), zinc oxide (ZnO), etc.

[0079] In some specific embodiments, the thickness of the electron transport layer is 10 - 30 nm.

[0080] In some specific embodiments, the inverted perovskite solar cell further includes: a hole blocking layer disposed between the electron transport layer and the electrode.

[0081] In some specific embodiments, the material of the hole blocking layer includes bathocuproine (BCP).

[0082] In some specific embodiments, the thickness of the hole blocking layer is 4 - 8 nm.

[0083] In some specific embodiments, the material of the electrode includes organic or inorganic or organic - inorganic hybrid conductive materials, and specifically may include Ag, Cu, C, Au, Al, ITO, AZO, BZO, or IZO, etc.

[0084] In some specific embodiments, the thickness of the electrode is 50 - 200 nm.

[0085] The third aspect of the present invention provides a method for preparing the above - mentioned inverted perovskite solar cell, which includes the following:

[0086] (1) Prepare a first metal oxide nanoparticle layer on a transparent conductive oxide (TCO) glass;

[0087] (2) Prepare a hole transport layer on the first metal oxide nanoparticle layer;

[0088] (3) Prepare a second metal oxide nanoparticle layer on the hole transport layer;

[0089] (4) Prepare a perovskite light - absorbing layer on the second metal oxide nanoparticle layer;

[0090] (5) Prepare an electron transport layer on the perovskite light - absorbing layer;

[0091] (6) Prepare an electrode on the electron transport layer to obtain the above - mentioned inverted perovskite solar cell;

[0092] Wherein, the first metal oxide nanoparticles include one or a combination of several of indium tin oxide (ITO) nanoparticles, fluorine - doped tin oxide (FTO) nanoparticles, nickel oxide (NiO) nanoparticles, etc.;

[0093] The second metal oxide nanoparticles include aluminum oxide (Al2O3) nanoparticles and / or aluminum-doped zinc oxide (AZO) nanoparticles, etc.

[0094] In some specific embodiments, step (1) specifically includes: spin-coating a first metal oxide nanoparticle dispersion on the transparent conductive thin film glass, and after annealing treatment, obtaining the first metal oxide nanoparticle layer. Among them, preferably, the concentration of the first metal oxide nanoparticles in the first metal oxide nanoparticle dispersion is 0.1-1 wt.%. Preferably, the rotation speed of the spin-coating is 3000-8000 rpm, and the time is 20-60 s. Preferably, the temperature of the annealing treatment is 80-150 °C, and the time is 5-20 min.

[0095] In some specific embodiments, step (2) specifically includes: spin-coating a solution of the hole transport layer material on the first metal oxide nanoparticle layer, and after annealing treatment, obtaining the hole transport layer. Among them, preferably, the concentration of the hole transport layer material in the solution of the hole transport layer material is 0.5-2 mmol / mL. Preferably, the rotation speed of the spin-coating is 3000-6000 rpm, and the time is 20-60 s. Preferably, the temperature of the annealing treatment is 80-150 °C, and the time is 5-20 min.

[0096] In some specific embodiments, the solvent in the solution of the hole transport layer material includes but is not limited to: isopropanol and / or ethanol, etc.

[0097] In some specific embodiments, step (3) specifically includes: spin-coating a second metal oxide nanoparticle dispersion on the hole transport layer, and after annealing treatment, obtaining the second metal oxide nanoparticle layer. Among them, preferably, the concentration of the second metal oxide nanoparticles in the second metal oxide nanoparticle dispersion is 0.1-2 wt.%. Preferably, the rotation speed of the spin-coating is 3000-8000 rpm, and the time is 20-60 s. Preferably, the temperature of the annealing treatment is 50-100 °C, and the time is 5-10 min.

[0098] In some specific embodiments, step (4) specifically includes: spin-coating a solution of the perovskite light-absorbing layer material on the second metal oxide nanoparticle layer, and after annealing treatment, obtaining the perovskite light-absorbing layer. Among them, preferably, the concentration of the perovskite light-absorbing layer material in the solution of the perovskite light-absorbing layer material is 0.8-2.2 M. Preferably, the rotation speed of the spin-coating is 3000-6000 rpm, and the time is 45-60 s. Preferably, the temperature of the annealing treatment is 100-150 °C, and the time is 10-20 min.

[0099] In some specific embodiments, step (5) specifically includes: depositing a material for the electron transport layer on the perovskite light-absorbing layer by evaporation to obtain the electron transport layer.

[0100] In some specific embodiments, step (6) further includes: preparing a hole-blocking layer on the electron transport layer, and then preparing an electrode on the hole-blocking layer to obtain the inverted perovskite solar cell.

[0101] In some specific embodiments, in step (6), the hole-blocking layer is prepared by depositing a material for the hole-blocking layer on the electron transport layer by evaporation.

[0102] In some specific embodiments, in step (6), the electrode is prepared by depositing a material for the electrode on the hole-blocking layer by evaporation.

[0103] The technical solution of the present invention will be specifically described below through examples and comparative examples. However, the present invention is not limited to these examples, and of course, various deformations can be carried out within the scope of the key points of the present invention.

[0104] Example 1

[0105] This example provides a method for interfacial regulation of a perovskite solar cell, which includes the following steps:

[0106] A first metal oxide nanoparticle layer is provided between the hole transport layer and the transparent conductive thin film (TCO) glass layer; a second metal oxide nanoparticle layer is provided between the hole transport layer and the perovskite light-absorbing layer.

[0107] Among them, the first metal oxide nanoparticles are ITO nanoparticles, with a particle size of <30 nm and an average particle size of 1-20 nm; the first metal oxide nanoparticle layer fills the surface pits of the transparent conductive thin film glass layer, and the filling depth of the first metal oxide nanoparticle layer is about 50 nm to fill the TCO pits.

[0108] The second metal oxide nanoparticles are AZO nanoparticles, with a particle size of 50 nm to <100 nm; the thickness of the highest part of the second metal oxide nanoparticle layer is 100 nm.

[0109] The surface roughness of the transparent conductive thin film glass layer is 50 nm.

[0110] The hole transport layer is a self-assembled monolayer hole transport layer, and its material is 4PACZ; the thickness of the hole transport layer is the thickness of a single molecular layer (<1 nm).

[0111] The thickness of the perovskite light-absorbing layer is 500 nm.

[0112] The first metal oxide nanoparticle layer is formed by spin - coating a dispersion of first metal oxide nanoparticles with a concentration of 0.5 wt.% on the cleaned and dried transparent conductive thin - film glass. The solvent in the dispersion is isopropyl alcohol. The spinning speed is 5000 rpm and the time is 30 s. Then, it is annealed at 100 °C for 10 min to obtain the first metal oxide nanoparticle layer.

[0113] The second metal oxide nanoparticle layer is formed by spin - coating a dispersion of second metal oxide nanoparticles with a concentration of 1 wt.% on the hole - transporting layer. The solvent in the dispersion is isopropyl alcohol. The spinning speed is 5000 rpm and the time is 30 s. Then, it is annealed at 100 °C for 10 min to obtain the second metal oxide nanoparticle layer.

[0114] This embodiment also provides a p - type perovskite solar cell, which sequentially includes, from bottom to top: a transparent conductive thin - film (TCO) glass layer, a first metal oxide nanoparticle layer, a hole - transporting layer, a second metal oxide nanoparticle layer, a perovskite light - absorbing layer, an electron - transporting layer, a hole - blocking layer, and an electrode.

[0115] The preparation method of the p - type perovskite solar cell in this embodiment includes the following steps:

[0116] Spin - coat a dispersion of first metal oxide nanoparticles with a concentration of 0.5 wt.% on the cleaned and dried FTO transparent conductive thin - film glass (glass thickness is 2.2 mm, FTO transparent conductive thin - film thickness is 300 nm, surface roughness is 50 nm). The first metal oxide nanoparticles are ITO nanoparticles with a particle size of < 30 nm and an average particle size of 1 - 20 nm. The solvent in the dispersion is isopropyl alcohol. The spinning speed is 5000 rpm and the time is 30 s. Then, it is annealed at 100 °C for 10 min to obtain the first metal oxide nanoparticle layer, which fills the surface pits of the transparent conductive thin - film glass layer. The filling depth of the first metal oxide nanoparticle layer is about 50 nm to fill the FTO pits.

[0117] Spin - coat a solution of the material of the hole - transporting layer with a concentration of 1 mmol / mL on the first metal oxide nanoparticle layer. The material of the hole - transporting layer is 4PACZ. The solvent in the solution is isopropyl alcohol. The spinning speed is 3000 rpm and the time is 30 s. Then, it is annealed at 100 °C for 10 min to obtain a self - assembled monolayer hole - transporting layer with a thickness of monolayer molecular thickness (< 1 nm).

[0118] A second metal oxide nanoparticle dispersion with a concentration of 1 wt.% is spin-coated on the hole transport layer. The second metal oxide nanoparticles are AZO nanoparticles with a particle size of 50 nm to <100 nm. The solvent in the dispersion is isopropanol. The spin-coating speed is 5000 rpm and the time is 30 s. Then, it is annealed at 100 °C for 10 min to obtain a second metal oxide nanoparticle layer, and the highest thickness of the cluster-like deposition is 100 nm;

[0119] Prepare a solution of 95 mol% Cs 0.22 FA 0.78 Pb(I 0.85 Br 0.15 )3 + 5 mol% MAPbCl3 as the material for the perovskite light-absorbing layer. The solvent in the solution is a combination of DMF and DMSO with a volume ratio of 4:1. The total concentration of the material for the perovskite light-absorbing layer in the solution is 1.4 mol / L. The solution of the material for the perovskite light-absorbing layer is spin-coated on the second metal oxide nanoparticle layer. The spin-coating speed is 5000 rpm and the time is 45 s. 300 μL of anisole antisolvent is added at the 20th second from the end. After spin-coating, it is annealed at 100 °C for 20 min to obtain a perovskite light-absorbing layer with a thickness of 500 nm;

[0120] Place the device prepared in the above steps in the thermal evaporation chamber of a thermal evaporation type vacuum coating instrument, and deposit C60 on the perovskite light-absorbing layer. The evaporation rate is to obtain an electron transport layer with a thickness of 30 nm;

[0121] Deposit BCP on the electron transport layer. The evaporation rate is to obtain a hole blocking layer with a thickness of 6 nm;

[0122] Vacuum deposit metallic silver on the hole blocking layer at a speed of 0.5 s to obtain an electrode with a thickness of 100 nm.

[0123] Comparative Example 1

[0124] This comparative example provides a reverse perovskite solar cell, which sequentially includes from bottom to top: a transparent conductive thin film (TCO) glass layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, a hole blocking layer, and an electrode.

[0125] The preparation method of the reverse perovskite solar cell in this comparative example includes the following steps:

[0126] On the cleaned and dried FTO transparent conductive thin film glass (glass thickness is 2.2 mm, FTO transparent conductive thin film thickness is 300 nm, surface roughness is 50 nm), a solution of the hole transport layer material with a concentration of 1 mmol / mL is spin-coated. The hole transport layer material is 4PACZ, the solvent in the solution is isopropanol, the spin-coating speed is 3000 rpm, the time is 30 s, and then it is annealed at 100 °C for 10 min to obtain a self-assembled monolayer hole transport layer with a thickness of monolayer molecular thickness (<1 nm);

[0127] Prepare a solution of 95% molar percentage Cs 0.22 FA 0.78 Pb(I 0.85 Br 0.15 )3 + 5% molar percentage MAPbCl3 as the solution of the perovskite light-absorbing layer material. The solvent in the solution is a combination of DMF and DMSO with a volume ratio of 4:1. The total concentration of the perovskite light-absorbing layer material in the solution is 1.4 mol / L. Spin-coat the solution of the perovskite light-absorbing layer material on the hole transport layer. The spin-coating speed is 5000 rpm, the time is 45 s, and 300 μL of anisole antisolvent is added at the 20th second from the end. After spin-coating, it is annealed at 100 °C for 20 min to obtain a perovskite light-absorbing layer with a thickness of 500 nm;

[0128] Place the device prepared in the above steps in the thermal evaporation chamber of a thermal evaporation vacuum coating instrument, deposit C60 on the perovskite light-absorbing layer, and the evaporation rate is to obtain an electron transport layer with a thickness of 30 nm;

[0129] Deposit BCP on the electron transport layer, and the evaporation rate is to obtain a hole blocking layer with a thickness of 6 nm;

[0130] Vacuum deposit metallic silver on the hole blocking layer at a speed of 0.5 s to obtain an electrode with a thickness of 100 nm.

[0131] Comparative Example 2

[0132] This comparative example provides a p-i-n type perovskite solar cell, which sequentially includes from bottom to top: a transparent conductive thin film (TCO) glass layer, a first metal oxide nanoparticle layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, a hole blocking layer, and an electrode.

[0133] The preparation method of the p-i-n type perovskite solar cell in this comparative example includes the following steps:

[0134] On the cleaned and dried FTO transparent conductive thin film glass (glass thickness is 2.2 mm, FTO transparent conductive thin film thickness is 300 nm, surface roughness is 50 nm), spin-coat a dispersion liquid of first metal oxide nanoparticles with a concentration of 0.5 wt.%. The first metal oxide nanoparticles are ITO nanoparticles, with a particle size of <30 nm and an average particle size of 1 - 20 nm. The solvent in the dispersion liquid is isopropyl alcohol. The spin-coating speed is 5000 rpm and the time is 30 s. Then, anneal at 100 °C for 10 min to obtain a first metal oxide nanoparticle layer, which fills the surface pits of the transparent conductive thin film glass layer. The filling depth of the first metal oxide nanoparticle layer is about 50 nm to fill the FTO pits;

[0135] Spin-coat a solution of the material of the hole transport layer with a concentration of 1 mmol / mL on the first metal oxide nanoparticle layer. The material of the hole transport layer is 4PACZ. The solvent in the solution is isopropyl alcohol. The spin-coating speed is 3000 rpm and the time is 30 s. Then, anneal at 100 °C for 10 min to obtain a self-assembled monolayer hole transport layer with a thickness of monolayer molecule thickness (<1 nm);

[0136] Prepare a solution of 95% molar percentage Cs 0.22 FA 0.78 Pb(I 0.85 Br 0.15 )3 + 5% molar percentage MAPbCl3 as the solution of the material of the perovskite light-absorbing layer. The solvent in the solution is a combination of DMF and DMSO with a volume ratio of 4:1. The total concentration of the material of the perovskite light-absorbing layer in the solution is 1.4 mol / L. Spin-coat the solution of the material of the perovskite light-absorbing layer on the hole transport layer. The spin-coating speed is 5000 rpm and the time is 45 s. Add 300 μL of anisole antisolvent at the 20th second from the end. After spin-coating, anneal at 100 °C for 20 min to obtain a perovskite light-absorbing layer with a thickness of 500 nm;

[0137] Place the device prepared in the above steps in the thermal evaporation chamber of a thermal evaporation type vacuum coating instrument, and deposit C60 on the perovskite light-absorbing layer. The evaporation rate is Obtain an electron transport layer with a thickness of 30 nm;

[0138] Deposit BCP on the electron transport layer. The evaporation rate is Obtain a hole blocking layer with a thickness of 6 nm;

[0139] Vacuum deposit metallic silver on the hole blocking layer at a speed of 0.5 s to obtain an electrode with a thickness of 100 nm.

[0140] Comparative Example 3

[0141] This comparative example provides a perovskite solar cell which, from bottom to top, sequentially includes: a transparent conductive film (TCO) glass layer, a hole transport layer, a second metal oxide nanoparticle layer, a perovskite light-absorbing layer, an electron transport layer, a hole blocking layer, and an electrode.

[0142] The preparation method of the perovskite solar cell in this comparative example includes the following steps:

[0143] Spin-coat a solution of the hole transport layer material with a concentration of 1 mmol / mL on the cleaned and dried FTO transparent conductive film glass (glass thickness is 2.2 mm, FTO transparent conductive film thickness is 300 nm, surface roughness is 50 nm). The material of the hole transport layer is 4PACZ, the solvent in the solution is isopropanol, the spin-coating speed is 3000 rpm, the time is 30 s, and then anneal at 100 °C for 10 min to obtain a self-assembled single-molecule hole transport layer with a thickness of monolayer molecule thickness (<1 nm);

[0144] Spin-coat a 1 wt.% dispersion of the second metal oxide nanoparticles on the hole transport layer. The second metal oxide nanoparticles are AZO nanoparticles with a particle size of 50 nm to <100 nm. The solvent in the dispersion is isopropanol, the spin-coating speed is 5000 rpm, the time is 30 s, and then anneal at 100 °C for 10 min to obtain a second metal oxide nanoparticle layer with the highest thickness of cluster deposition of 100 nm;

[0145] Prepare a solution of 95% molar percentage Cs 0.22 FA 0.78 Pb(I 0.85 Br 0.15 )3 + 5% molar percentage MAPbCl3 as the solution of the perovskite light-absorbing layer material. The solvent in the solution is a combination of DMF and DMSO with a volume ratio of 4:1. The total concentration of the perovskite light-absorbing layer material in the solution is 1.4 mol / L. Spin-coat the solution of the perovskite light-absorbing layer material on the second metal oxide nanoparticle layer. The spin-coating speed is 5000 rpm, the time is 45 s, add 300 μL of anisole antisolvent at the 20th second from the end, and after spin-coating, anneal at 100 °C for 20 min to obtain a perovskite light-absorbing layer with a thickness of 500 nm;

[0146] Place the device prepared in the above steps in the thermal evaporation chamber of a thermal evaporation type vacuum coating instrument, deposit C60 on the perovskite light-absorbing layer, and the evaporation rate is to obtain an electron transport layer with a thickness of 30 nm;

[0147] Deposit BCP on the electron transport layer, and the evaporation rate is to obtain a hole blocking layer with a thickness of 6 nm;

[0148] Deposit metallic silver on the hole blocking layer by vacuum deposition at a speed of 0.5 s to obtain an electrode with a thickness of 100 nm.

[0149] Example 2

[0150] This example provides a perovskite solar cell, which sequentially includes, from bottom to top: a transparent conductive thin film (TCO) glass layer, a first metal oxide nanoparticle layer, a hole transport layer, a second metal oxide nanoparticle layer, a perovskite light absorption layer, an electron transport layer, a hole blocking layer, and an electrode.

[0151] The preparation method of the perovskite solar cell in this example includes the following steps:

[0152] Spin-coat a dispersion of first metal oxide nanoparticles with a concentration of 0.5 wt.% on the cleaned and dried FTO transparent conductive thin film glass (glass thickness is 2.2 mm, FTO transparent conductive thin film thickness is 300 nm, surface roughness is 50 nm). The first metal oxide nanoparticles are FTO nanoparticles with a particle size of < 30 nm and an average particle size of 1 - 20 nm. The solvent in the dispersion is isopropanol. The spin-coating speed is 5000 rpm and the time is 30 s. Then anneal at 100 °C for 10 min to obtain the first metal oxide nanoparticle layer, which fills the surface pits of the transparent conductive thin film glass layer. The filling depth of the first metal oxide nanoparticle layer is about 50 nm to fill the FTO pits;

[0153] Spin-coat a solution of the material of the hole transport layer with a concentration of 1 mmol / mL on the first metal oxide nanoparticle layer. The material of the hole transport layer is 4PACZ. The solvent in the solution is isopropanol. The spin-coating speed is 3000 rpm and the time is 30 s. Then anneal at 100 °C for 10 min to obtain a self-assembled single-molecule hole transport layer with a thickness of monolayer molecule thickness (< 1 nm);

[0154] Spin-coat a dispersion of second metal oxide nanoparticles with a concentration of 1 wt.% on the hole transport layer. The second metal oxide nanoparticles are AZO nanoparticles with a particle size of 50 nm to < 100 nm. The solvent in the dispersion is isopropanol. The spin-coating speed is 5000 rpm and the time is 30 s. Then anneal at 100 °C for 10 min to obtain the second metal oxide nanoparticle layer, and the highest thickness of its cluster deposition is 100 nm;

[0155] Prepare 95% molar percentage Cs 0.22 FA 0.78 Pb(I 0.85 Br 0.15) A solution of 3 + 5% molar percentage MAPbCl3 as the material of the perovskite light-absorbing layer, where the solvent in the solution is a combination of DMF and DMSO with a volume ratio of 4:1, and the total concentration of the material of the perovskite light-absorbing layer in the solution is 1.4 mol / L. Spin-coat the solution of the material of the perovskite light-absorbing layer on the second metal oxide nanoparticle layer at a spin-coating speed of 5000 rpm for 45 s, and add 300 μL of anisole antisolvent at the 20th second from the end. After spin-coating, anneal at 100 °C for 20 min to obtain the perovskite light-absorbing layer with a thickness of 500 nm;

[0156] Place the device prepared in the above steps in the thermal evaporation chamber of a thermal evaporation vacuum coater, and deposit C60 on the perovskite light-absorbing layer. The evaporation rate is to obtain the electron transport layer with a thickness of 30 nm;

[0157] Deposit BCP on the electron transport layer. The evaporation rate is to obtain the hole blocking layer with a thickness of 6 nm;

[0158] Vacuum deposit metallic silver on the hole blocking layer at a speed of 0.5 s to obtain the electrode with a thickness of 100 nm.

[0159] Example 3

[0160] This example provides a p-i-n perovskite solar cell, which sequentially includes from bottom to top: a transparent conductive thin film (TCO) glass layer, a first metal oxide nanoparticle layer, a hole transport layer, a second metal oxide nanoparticle layer, a perovskite light-absorbing layer, an electron transport layer, a hole blocking layer, and an electrode.

[0161] The preparation method of the p-i-n perovskite solar cell in this example includes the following steps:

[0162] Spin-coat a 0.5 wt.% dispersion of the first metal oxide nanoparticles on the cleaned and dried FTO transparent conductive thin film glass (glass thickness is 2.2 mm, FTO transparent conductive thin film thickness is 300 nm, surface roughness is 50 nm). The first metal oxide nanoparticles are ITO nanoparticles with a particle size of < 30 nm and an average particle size of 1 - 20 nm. The solvent in the dispersion is isopropanol. Spin-coat at a speed of 5000 rpm for 30 s, and then anneal at 100 °C for 10 min to obtain the first metal oxide nanoparticle layer, which fills the surface pits of the transparent conductive thin film glass layer. The filling depth of the first metal oxide nanoparticle layer is about 50 nm to fill the FTO pits;

[0163] A solution of the hole transport layer material with a concentration of 1 mmol / mL was spin-coated on the first metal oxide nanoparticle layer. The hole transport layer material was 4PACZ, the solvent in the solution was isopropanol, the spin-coating speed was 3000 rpm, and the time was 30 s. Then, it was annealed at 100 °C for 10 min to obtain a self-assembled monolayer hole transport layer with a thickness of monolayer molecular thickness (<1 nm).

[0164] A dispersion of the second metal oxide nanoparticles with a concentration of 1 wt.% was spin-coated on the hole transport layer. The second metal oxide nanoparticles were Al2O3 nanoparticles with a particle size of 50 nm to <100 nm. The solvent in the dispersion was isopropanol, the spin-coating speed was 5000 rpm, and the time was 30 s. Then, it was annealed at 100 °C for 10 min to obtain the second metal oxide nanoparticle layer with the highest thickness of cluster deposition of 100 nm.

[0165] Prepare 95% molar percentage Cs 0.22 FA 0.78 Pb(I 0.85 Br 0.15 )3 + 5% molar percentage MAPbCl3 as a solution of the perovskite light-absorbing layer material. The solvent in the solution was a combination of DMF and DMSO with a volume ratio of 4:1. The total concentration of the perovskite light-absorbing layer material in the solution was 1.4 mol / L. The solution of the perovskite light-absorbing layer material was spin-coated on the second metal oxide nanoparticle layer. The spin-coating speed was 5000 rpm, and the time was 45 s. 300 μL of anisole antisolvent was added at the last 20 s. After spin-coating, it was annealed at 100 °C for 20 min to obtain the perovskite light-absorbing layer with a thickness of 500 nm.

[0166] The device prepared in the above steps was placed in the thermal evaporation chamber of a thermal evaporation vacuum coater, and C60 was deposited on the perovskite light-absorbing layer. The evaporation rate was to obtain an electron transport layer with a thickness of 30 nm.

[0167] BCP was deposited on the electron transport layer. The evaporation rate was to obtain a hole blocking layer with a thickness of 6 nm.

[0168] Metal silver was vacuum deposited on the hole blocking layer at a speed of 0.5 s to obtain an electrode with a thickness of 100 nm.

[0169] Example 4

[0170] This embodiment provides a perovskite solar cell, which sequentially includes, from bottom to top: a transparent conductive thin film (TCO) glass layer, a first metal oxide nanoparticle layer, a hole transport layer, a second metal oxide nanoparticle layer, a perovskite light-absorbing layer, an electron transport layer, a hole blocking layer, and an electrode.

[0171] The preparation method of the perovskite solar cell of this embodiment includes the following steps:

[0172] Spin-coat a dispersion liquid of first metal oxide nanoparticles with a concentration of 0.5 wt.% on the cleaned and dried FTO transparent conductive thin film glass (glass thickness is 2.2 mm, FTO transparent conductive thin film thickness is 300 nm, surface roughness is 50 nm). The first metal oxide nanoparticles are NiO nanoparticles, with a particle size of < 30 nm, an average particle size of 1 - 20 nm. The solvent in the dispersion liquid is isopropanol. The spin-coating speed is 5000 rpm, and the time is 30 s. Then, anneal at 100 °C for 10 min to obtain the first metal oxide nanoparticle layer, which fills the surface pits of the transparent conductive thin film glass layer. The filling depth of the first metal oxide nanoparticle layer is about 50 nm to fill the FTO pits.

[0173] Spin-coat a solution of the material of the hole transport layer with a concentration of 1 mmol / mL on the first metal oxide nanoparticle layer. The material of the hole transport layer is 4PACZ. The solvent in the solution is isopropanol. The spin-coating speed is 3000 rpm, and the time is 30 s. Then, anneal at 100 °C for 10 min to obtain a self-assembled monolayer hole transport layer with a thickness of monolayer molecular thickness (< 1 nm).

[0174] Spin-coat a dispersion liquid of second metal oxide nanoparticles with a concentration of 1 wt.% on the hole transport layer. The second metal oxide nanoparticles are AZO nanoparticles, with a particle size of 50 nm to < 100 nm. The solvent in the dispersion liquid is isopropanol. The spin-coating speed is 5000 rpm, and the time is 30 s. Then, anneal at 100 °C for 10 min to obtain the second metal oxide nanoparticle layer, and the highest thickness of its cluster deposition is 100 nm.

[0175] Prepare 95% molar percentage Cs 0.22 FA 0.78 Pb(I 0.85 Br 0.15) A solution of 3 + 5% molar percentage MAPbCl3 as the material of the perovskite light-absorbing layer, where the solvent in the solution is a combination of DMF and DMSO with a volume ratio of 4:1, and the total concentration of the material of the perovskite light-absorbing layer in the solution is 1.4 mol / L. Spin-coat the solution of the material of the perovskite light-absorbing layer on the second metal oxide nanoparticle layer at a spin-coating speed of 5000 rpm for 45 s, and add 300 μL of anisole antisolvent at the 20th second from the end. After spin-coating, anneal at 100 °C for 20 min to obtain a perovskite light-absorbing layer with a thickness of 500 nm;

[0176] Place the device prepared in the above steps in the thermal evaporation chamber of a thermal evaporation vacuum coater, and deposit C60 on the perovskite light-absorbing layer. The evaporation rate is to obtain an electron transport layer with a thickness of 30 nm;

[0177] Deposit BCP on the electron transport layer. The evaporation rate is to obtain a hole-blocking layer with a thickness of 6 nm;

[0178] Vacuum deposit metallic silver on the hole-blocking layer at a speed of 0.5 s to obtain an electrode with a thickness of 100 nm.

[0179] Test Example

[0180] Perform photovoltaic performance tests on the inverted perovskite solar cells provided in Examples 1 - 4 and Comparative Examples 1 - 3 above. This test is carried out using a Keithley 2400 SMU under AM 1.5 G solar irradiation with a light source of 100 mW / cm 2 The obtained test data are shown in Table 1 below.

[0181] Table 1 Photovoltaic Performance of Perovskite Solar Cells

[0182] <![CDATA[Jsc (mA·cm -2 )]]> Voc (V) FF (%) PCE (%) Example 1 20.63 1.26 86.10 22.32 Example 2 20.58 1.25 85.8 22.07 Example 3 20.52 1.25 85.6 21.96 Example 4 20.54 1.26 84.8 21.95 Comparative Example 1 19.32 1.14 81.73 18.91 Comparative Example 2 20.03 1.19 83.49 19.90 Comparative Example 3 20.15 1.18 84.80 20.16

[0183] It can be seen from the data in Table 1 that compared with Comparative Example 1 without the first metal oxide nanoparticle layer and the second metal oxide nanoparticle layer, Comparative Example 2 with only the first metal oxide nanoparticle layer, and Comparative Example 3 with only the second metal oxide nanoparticle layer, each example of the present invention improves the surface wettability of the self-assembled monolayer hole transport layer and improves the arrangement uniformity of the self-assembled monolayer hole transport layer, and finally improves the photoelectric conversion efficiency of the perovskite solar cell.

[0184] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, rather than limitations on the implementation manners of the present invention. For those of ordinary skill in the art, other different forms of changes or variations can be made based on the above description. It is impossible to list all the implementation manners here. Any obvious changes or variations derived from the technical solutions of the present invention still fall within the protection scope of the present invention.

Claims

1. A method for interfacial regulation of a perovskite solar cell, comprising the following steps: Providing a first metal oxide nanoparticle layer between the hole transport layer and the transparent conductive thin film glass layer; Providing a second metal oxide nanoparticle layer between the hole transport layer and the perovskite light-absorbing layer; Wherein, the first metal oxide nanoparticles include one or a combination of indium tin oxide nanoparticles, fluorine-doped tin oxide nanoparticles, and nickel oxide nanoparticles; The second metal oxide nanoparticles include aluminum oxide nanoparticles and / or aluminum-doped zinc oxide nanoparticles.

2. The interface regulation method of the perovskite solar cell according to claim 1, wherein, The particle size of the first metal oxide nanoparticles is below 30 nm, and the average particle size is 1-20 nm; Preferably, the first metal oxide nanoparticle layer fills the surface pits of the transparent conductive thin film glass layer, and the filling depth of the first metal oxide nanoparticle layer is 10-100 nm.

3. The interface regulation method of the perovskite solar cell according to claim 1, wherein, The particle size of the second metal oxide nanoparticles is below half of the thickness of the perovskite light-absorbing layer; Preferably, the particle size of the second metal oxide nanoparticles is 50-100 nm; Preferably, the thickness of the highest part of the second metal oxide nanoparticle layer is 50-250 nm.

4. The interface regulation method of the perovskite solar cell according to claim 1, wherein, The surface roughness of the transparent conductive thin film glass layer is 10-100 nm.

5. The interface regulation method of the perovskite solar cell according to claim 1, wherein, The hole transport layer is a self-assembled single-molecule hole transport layer; Preferably, the thickness of the hole transport layer is the thickness of a single layer of molecules.

6. The interface regulation method of the perovskite solar cell according to claim 1, wherein, The thickness of the perovskite light-absorbing layer is 400-1200 nm.

7. A perovskite solar cell, which sequentially includes the following components from bottom to top: A transparent conductive thin film glass layer, a first metal oxide nanoparticle layer, a hole transport layer, a second metal oxide nanoparticle layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode; Wherein, the first metal oxide nanoparticles include one or a combination of indium tin oxide nanoparticles, fluorine-doped tin oxide nanoparticles, and nickel oxide nanoparticles; The second metal oxide nanoparticles include aluminum oxide nanoparticles and / or aluminum-doped zinc oxide nanoparticles.

8. The perovskite solar cell according to claim 7, wherein, The particle size of the first metal oxide nanoparticles is below 30 nm, and the average particle size is 1-20 nm; Preferably, the first metal oxide nanoparticle layer fills the surface pits of the transparent conductive thin film glass layer, and the filling depth of the first metal oxide nanoparticle layer is 10-100 nm.

9. The perovskite solar cell according to claim 7, wherein, The particle size of the second metal oxide nanoparticles is below half of the thickness of the perovskite light-absorbing layer; Preferably, the particle size of the second metal oxide nanoparticles is 50-100 nm; Preferably, the thickness of the highest part of the second metal oxide nanoparticle layer is 50-250 nm.

10. The perovskite solar cell according to claim 7, wherein, The surface roughness of the transparent conductive thin film glass layer is 10-100 nm.

11. The perovskite solar cell according to claim 7, wherein, The hole transport layer is a self-assembled single-molecule hole transport layer; Preferably, the thickness of the hole transport layer is the thickness of a single layer of molecules.

12. The perovskite solar cell according to claim 7, wherein, The thickness of the perovskite light-absorbing layer is 400-1200 nm; Preferably, the thickness of the electron transport layer is 10-30 nm.

13. The perovskite solar cell according to claim 7, wherein, The inverted perovskite solar cell further includes: a hole blocking layer, which is disposed between the electron transport layer and the electrode; Preferably, the thickness of the hole blocking layer is 4-8 nm; Preferably, the thickness of the electrode is 50-200 nm.

14. A method for preparing a perovskite solar cell according to any one of claims 7-13, comprising the following steps: (1) Preparing a first metal oxide nanoparticle layer on a transparent conductive thin film glass; (2) Preparing a hole transport layer on the first metal oxide nanoparticle layer; (3) Preparing a second metal oxide nanoparticle layer on the hole transport layer; (4) Preparing a perovskite light absorbing layer on the second metal oxide nanoparticle layer; (5) Preparing an electron transport layer on the perovskite light absorbing layer; (6) Preparing an electrode on the electron transport layer to obtain the perovskite solar cell; wherein, the first metal oxide nanoparticles include one or a combination of several of indium tin oxide nanoparticles, fluorine-doped tin oxide nanoparticles, and nickel oxide nanoparticles; The second metal oxide nanoparticles include aluminum oxide nanoparticles and / or aluminum-doped zinc oxide nanoparticles.

15. The preparation method according to claim 14, wherein, Step (6) further includes: preparing a hole blocking layer on the electron transport layer, and then preparing an electrode on the hole blocking layer to obtain the perovskite solar cell.