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63results about How to "Good light absorption properties" patented technology

Super black material and preparation method and application thereof

The invention discloses a super black material and a preparation method and application thereof, and belongs to the technical field of nanometer material preparation. The super black material is composed of a base copper nanometer cluster and a graphitized carbon layer supported on the surface thereof, and the super black material forms the core-shell structure and is composed of, by weight: 51.9%to 84.3% of the copper nanometer cluster and 15.7% to 48.1% of carbon. By using the copper 4-pentanedionate hydrate as an elementary material, the super black material and preparation method and application thereof coats the surface of the copper nanometer cluster with the graphitized carbon layer to form a unique core-shell structure. The obtained super black material is characterized by excellent light absorption, and has significant optical loss effect caused by surface effect and quantum effect. The absorption range of the copper nanometer cluster or the super-black carbon material is soextensive that the copper nanometer cluster or the super-black carbon material has good light absorption performance at the wavelength of 200-900 nm; and the preparation method of the super black material is easy to operate, low in cost of finished products and process cost and conducive to industrial production, and the process conditions are easy to control.
Owner:CENT SOUTH UNIV

Sulfo-diene nickel complex as well as preparation method and applications thereof

The invention relates to a sulfo-diene nickel complex as well as a preparation method and applications thereof and belongs to the field of organic synthesis. According to the adopted technical scheme, the general formula of the sulfo-diene nickel complex is shown in the specification, wherein the R is straight chain or branched chain alkyl of C6-C20 or straight chain or branched chain alkoxy of C6-C20. The preparation method of the complex comprises the following steps: dissolving a compound with the structural formula as shown in the specification in an organic solvent, carrying out acylation reaction with oxalyl chloride (C2O2Cl2) to obtain an o-diketone compound and continuing reacting under the action of P2S5 and nickel chloride to obtain the sulfo-diene nickel complex. The preparation method disclosed by the invention is simple and mild in condition; the prepared complex is good in heat stability and difficult in separating and has very high light absorption coefficient in a near-infrared region; the light filter prepared by adopting the complex is very good in effect on near-infrared laser protection and is particularly suitable for 1064nm laser protection; in the meantime, the complex has the double characteristics of visibility and laser protection compatible in a visible light region.
Owner:佛山市顺德区骐奥塑料实业有限公司

Preparation method and application of multi-pole sub-local area surface plasma resonance absorber

The invention discloses a preparation method and application of a multi-pole sub-local area surface plasma resonance absorber. By improving the preparation method of a core shell, the light absorbingcharacteristic of the single nano absorber is improved through a nano composite core shell structure material, and the obtained single multi-pole sub-local area surface plasma resonance absorber has four plasma resonance absorbing peaks within the range of 200-1,300 nm, the absorbing spectrum of the absorber is broadened, the problem that the light absorbing characteristic of the single absorber is difficult to improve is solved, a new method for improving the light absorbing characteristic of the single absorber is created, and a feasible strategy is provided for how to improve the light absorbing characteristic of the single absorber; meanwhile, the comprehensive photothermal performance of the multi-pole sub-local surface plasma resonance absorber is excellent, the sunlight with low energy density can be efficiently captured, high-temperature overheating and photothermal steam can be rapidly and efficiently generated, and the problem that it is difficult to generate high-temperature, fast and efficient photothermal steam at the same time by the photothermal conversion is solved.
Owner:王海龙

Photo-curing equipment

PendingCN110789035AEasy to replace the light sourceAchieve solidificationPhysicsLight absorbance
The invention discloses photo-curing equipment. The photo-curing equipment comprises an objective table arranged in a light shading cover, a mould or a material slot formed in the objective table, a light source 4 which is suspended on the mould or above the material slot, a light source conversion module which can be connected to the light source to realize conversion among multiple specific-wavelength light sources, a light source lifting module which realizes light source spatial position regulation, a light source translation module, a light source rotation module, a light intensity meterwhich is suspended on the mould or above the material slot, a light intensity meter lifting module which realizes light intensity meter spatial position regulation, a light intensity meter translationmodule and a light intensity meter rotation module, an electrical control system box which supplies power to the light source and the light intensity meter, and realizes light source and light intensity meter spatial position regulation to control signal resolution and transmission, and an air cooler which is positioned outside the light shading cover to output cooling capacity for light source cooling. The photo-curing equipment realizes an efficient curing target through precise control on multi-light-source conversion and light source height according to different light absorption characteristics and different curing depth requirements of different photo-curing material systems.
Owner:XI AN JIAOTONG UNIV

A dual-band thin-film photodetector and its preparation method

The invention belongs to the fields of micro-nano manufacturing and a photoelectronic device, and discloses a dual-wave-band thin film optical detector. The dual-wave-band thin film optical detector comprises a substrate slice, a first electrode layer, a first WSe<2> layer, a graphene layer, a first MoS<2> layer, a second electrode layer, a dielectric layer, a second WSe<2> layer, a third electrode layer, a second MoS<2> layer and a fourth electrode layer, wherein the first electrode layer is arranged on the substrate slice; the first WSe<2> layer is paved on the substrate slice and the first electrode layer; the graphene layer is arranged on the first WSe<2> layer; the first MoS<2> layer is arranged on the graphene layer; the second electrode layer is arranged on the first MoS<2> layer; the dielectric layer is paved on the first MoS<2> layer and the second electrode layer; the second WSe<2> layer is arranged on the dielectric layer; the third electrode layer and the second MoS<2> layer are arranged on the second WSe<2> layer; and the fourth electrode layer is arranged on the second MoS<2> layer. The current carrier adopted by the dual-wave-band thin film optical detector is high in mobility, so that the dual-wave-band thin film optical detector is high in optical absorption characteristic in the visible light wave band.
Owner:HUAZHONG UNIV OF SCI & TECH
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