63results about How to "Good light absorption properties" patented technology

The invention belongs to the fields of micro-nano manufacturing and a photoelectronic device, and discloses a dual-wave-band thin film optical detector. The dual-wave-band thin film optical detector comprises a substrate slice, a first electrode layer, a first WSe<2> layer, a graphene layer, a first MoS<2> layer, a second electrode layer, a dielectric layer, a second WSe<2> layer, a third electrode layer, a second MoS<2> layer and a fourth electrode layer, wherein the first electrode layer is arranged on the substrate slice; the first WSe<2> layer is paved on the substrate slice and the first electrode layer; the graphene layer is arranged on the first WSe<2> layer; the first MoS<2> layer is arranged on the graphene layer; the second electrode layer is arranged on the first MoS<2> layer; the dielectric layer is paved on the first MoS<2> layer and the second electrode layer; the second WSe<2> layer is arranged on the dielectric layer; the third electrode layer and the second MoS<2> layer are arranged on the second WSe<2> layer; and the fourth electrode layer is arranged on the second MoS<2> layer. The current carrier adopted by the dual-wave-band thin film optical detector is high in mobility, so that the dual-wave-band thin film optical detector is high in optical absorption characteristic in the visible light wave band.