Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of superlattice material and its preparation method and application

A superlattice, two-dimensional material technology, applied in the growth of polycrystalline materials, the application of conductive/insulating/magnetic materials on magnetic films, chemical instruments and methods, etc. storage application requirements and other issues

Active Publication Date: 2020-01-31
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the development of magneto-optical information storage technology, traditional information storage materials and device architectures have been difficult to meet the requirements of miniaturization and low power consumption storage applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of superlattice material and its preparation method and application
  • A kind of superlattice material and its preparation method and application
  • A kind of superlattice material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] The present invention also provides a method for preparing the superlattice material described in the above technical solution, comprising the following steps:

[0038] The first ferrimagnetic thin film, the two-dimensional material layer and the second ferrimagnetic thin film are sequentially stacked and grown on the substrate to obtain a superlattice material.

[0039] In the present invention, unless otherwise specified, all raw material components are commercially available products well known to those skilled in the art.

[0040] In the present invention, the substrate is preferably pretreated before growing the first ferrimagnetic thin film; the pretreatment is preferably cleaned with acetone, alcohol and deionized water in sequence; the cleaning It is carried out under ultrasonic conditions; the present invention does not have any special limitation on the ultrasonic conditions.

[0041] In the present invention, the method for growing the first ferrimagnetic th...

Embodiment 1

[0063] A superlattice material: the substrate material is a gadolinium gallium garnet (GGG) single crystal substrate, the material of the first ferrimagnetic thin film is yttrium iron garnet (YIG) (60nm), and the material of the two-dimensional material layer is Monolayer graphene, the material of the second ferrimagnetic film is yttrium iron garnet (YIG) (60nm);

[0064] Preparation:

[0065] 1) Use acetone, alcohol and deionized water in sequence to clean the substrate material under ultrasonic conditions;

[0066] 2) Put the substrate in the pulsed laser deposition chamber, and set the target base distance (7cm); at ≤10 -6 In a vacuum environment of Pa, heat the substrate to 750°C at a heating rate of 10°C / min; inject oxygen into the cavity (atmospheric pressure of 1.0Pa); then, turn on and set the laser parameters (laser energy is 300mJ; The laser frequency is 5 Hz); open the substrate baffle, deposit for 20 minutes, close the substrate baffle after the deposition is com...

Embodiment 2

[0073] A superlattice material: the substrate material is a gadolinium gallium garnet (GGG) single crystal substrate, the material of the first ferrimagnetic thin film is thulium iron garnet (TmIG) (60nm), and the material of the two-dimensional material layer is Monolayer graphene, the material of the second ferrimagnetic film is thulium iron garnet (TmIG) (60nm);

[0074] The preparation method refers to Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of superlattice magneto-optical materials, in particular to a superlattice material and its preparation method and application. According to the records of the embodiments, the superlattice material provided by the present invention has both the good magnetic properties of ferrous garnet materials and the good photoelectric absorption characteristics of two-dimensional semiconductor materials such as graphene, and the magneto-optical Kerr effect data obtained by the test shows that , the saturation magneto-optic Kerr angle of the superlattice material of the present invention under the 2500Oe magnetic field is 13mdeg, compared with the non-superlattice ferrimagnetic thin film material that does not insert two-dimensional material, its magneto-optic Kerr angle improves 2.5 times, realizing the enhancement of the magneto-optic effect.

Description

technical field [0001] The invention relates to the technical field of superlattice magneto-optical materials, in particular to a superlattice material and its preparation method and application. Background technique [0002] With the development of magneto-optical information storage technology, traditional information storage materials and device architectures have been difficult to meet the requirements of miniaturization and low power consumption storage applications. The study of the magneto-optic effect found that the electromagnetic properties of substances with inherent magnetic moments will change under the action of an external magnetic field, which will change the transmission characteristics of light waves inside. The degree of freedom of light determines the two It can be used as an information carrier and has the characteristics of low energy consumption, high sensitivity and quantized transport. Therefore, the interaction of light and matter is an important s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C30B19/12C23C14/08C30B23/02C23C14/35
CPCC23C14/0036C23C14/08C23C14/28C30B19/12C30B23/025G02F1/091G11B11/10584G11B11/10593H01F10/3209H01F41/302C23C14/083C23C14/085C30B29/46G11B11/105H01F10/28H01F10/30H01F10/3245H01F10/3254H01F41/32
Inventor 金立川贾侃成张岱南张怀武钟智勇杨青慧唐晓莉白飞明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products