43 results about "Photoelectric absorption" patented technology

A method of measuring characteristics of a geologic formation, using the time, energy and spatial spectra of gamma rays induced by an accelerator, which allows (i) the measurement of the photoelectric absorption (Pe) factor of the formation using a gamma-ray spectrum detected from gamma rays induced in the formation, (ii) the calculation of a neutron porosity of the formation using the gamma-ray spectrum, and (iii) the determination of a bulk density of the formation using the spectroscopic measurements. The Pe factor may be inferred by directly mapping the spectroscopic measurements. The porosity may be calculated by relating the gamma-ray spectrum to a hydrogen content of the formation. The density may be determined by computing a gamma diffusion length of the formation based on the gamma-ray spectrum. In addition to these measurements, the resistivity of the formation and its spontaneous potential may also be measured using an electromagnetic induction system.

A method for inferring the photoelectric absorption of a formation by directly mapping spectroscopic measurements of gamma rays induced in the formation using a fast neutron source. The mapping is accomplished by creating a polynomial function based on counts of gamma-ray events in the gamma-ray energy spectrum; the coefficients of the polynomial function are determined in known calibration environments, and the value of the polynomial is the inferred photoelectric absorption parameter. The spectroscopic measurements are preferably generated by sorting gamma-ray counts of the gamma-ray spectrum into a plurality of energy-dependent channels, and measuring these gamma-ray energy distributions during different portions of the firing cycle where different types of dominant gamma-ray production reactions occur.

A single plane Compton telescope uses a coplanar array of detectors to determine the direction of a radiation source. Detector materials and dimensions may have comparable Compton scattering and photoelectric absorption probabilities, so scattered photons have a high probability of escape from the detector in which the initial interaction occurs, while being absorbed in adjacent detectors. Energy information from coincident interactions between two detectors defines a bearing plane that contains the radiation source; by comparing these interactions in two non-parallel directions, the source is localized to a line representing the intersection of two bearing planes. Energies may be summed to determine the initial photon energy. The array may be of a single detector type or an arrangement of different detector types. The array may be a stationary, planar configuration of at least three detectors, or a linear array of at least two detectors that is rotatable within a selected plane.

The invention discloses an ionizing-radiation-preventive composite material and a preparation method thereof. In the ionizing-radiation-preventive composite material, basalt fiber is high in content of heavy-nucleus elements like iron and manganese, and the heavy-nucleus elements improve absorbing and scattering effect on high-energy ionizing radiation of the basalt fiber, so that compared with other reinforced fiber, the basalt fiber has better ray shielding performance; due to special atomic energy level, rare earth oxide has strong photoelectric absorbing effect on rays of 10-80 keV, and weak absorbing area that the heavy-nucleus elements have within the range can be filled up, so that shielding performance of the basalt fiber composite material on wide-energy-range rays is improved remarkably. The rare earth oxide, a resin matrix and the basalt fiber mutually cooperate and mutually act, so that the ionizing-radiation-preventive composite material has good radiation-preventive performance and mechanical performance.

The invention discloses an optimal scheduling method of a wind-light-water complementary power generation system containing cascade hydropower. The method comprises the steps: obtaining information ofa wind power plant, a photovoltaic power station and a cascade hydropower station, establishing an optimal scheduling model of a wind-light-water complementary power generation system containing cascade hydropower stations, proposing a wind-light-water complementary power generation increment benefit quantification method, and finally proposing a wind-light-water complementary power generation increment benefit allocation method. From the perspective of operation, the invention provides the optimal scheduling model of the wind-light-water complementary power generation system containing the cascade hydropower station, the model utilizes the natural complementary characteristics of wind power resources and illumination resources, the ability of the cascade hydropower station to regulate water resources as a whole is exerted, the wind power and photoelectric absorption ability is improved, and the reliability requirement of output electric energy is met.

The invention discloses a densified sandstone air layer identification evaluation method free from the influence of a frame. The method comprises: performing array sonic logging in wells in an area, according to the standard process of array sound wave data processing, performing calculating and analyzing, and solving a volume compression coefficient and a Poisson's ratio curve; for a ground layer with a similar lithology, according to the relative mirror image relation between the volume compression coefficient and a Poisson's ratio, identifying the fluid property of a storage layer by use of a superposition method; for a ground layer with a quite large lithology difference, according to a photoelectric absorption cross section index PE, mud quality content, and other lithology component contents, performing frame influence eliminating correction, reconstructing the relative mirror image relation between the volume compression coefficient and the Poisson's ratio, and accordingly, performing identification on the fluid property of the storage layer; and constructing a "mechanical characteristic parameter interpretation template" suitable for the local area, and performing fluid property identification on different lithology storage layers. According to the invention, the frame influence eliminating correction is carried out on the different lithology storage layers, so that the fluid property identification accuracy of the storage layer is improved.

The invention discloses a high-sensitivity ultraviolet light detector. An ultraviolet-light absorption-type organic film is taken as a photoelectric absorption layer so as to absorb ultraviolet light and grapheme with high mobility is taken as a current channel transmission carrier. Photoelectric reaction time can be greatly shortened and photoelectric sensitivity of a device is increased. Simultaneously, the grapheme and the organic film are flexible materials so that a feasible scheme is provided for flexible integration of the device.

The invention belongs to the field of oil and gas, and particularly relates to a method for determining the tufaceous content of high-gamma sandstone. A volume model of a rock and volume models of the components of the rock are established, and a tufaceous content determining method based on nested volume models is formed. The method comprises the following steps: standardizing well logging data; establishing a rock volume model, and determining the composition and content of the framework, tuffaceous and mud in the rock; adopting a photoelectric absorption cross section index-natural gamma ray method to identify a high-gamma sandstone reservoir interval based on a well logging curve; selecting a well logging curve for determining the tufaceous content; using a nested volume model to determine the well logging parameter of the rock framework; using a nested volume model to determine the well logging response parameter of tuffaceous; using a nested volume model to determine the well logging response parameter of mud; determining the well logging response parameter of pores according to the type of fluid; and establishing a rock volume model equation, and determining the tuffaceous content. According to the invention, a nested two-layer volume model is adopted, and the explaining result is more accurate.

The invention discloses a double-glass photovoltaic module. The double-glass photovoltaic module comprises an outdoor tempered glass layer, an organic silica gel film, tempered glass, a low-radiation metal film and an indoor tempered glass layer, wherein a glass substrate, a transparent conducting layer, a photoelectric absorption layer and a back electrode layer are arranged from bottom to top in sequence; a sound insulation cavity is arranged between the tempered glass on the insider side and the low-radiation metal film; and the low-radiation metal film is adhered to the inner side of the indoor tempered glass layer. According to the double-glass photovoltaic module, a novel organic silica gel film is introduced, and through the copolymerization modification for polysiloxane molecular chains, the novel organic silicon material has excellent thermoplastic performance, can be processed into films, has good adhesion with glass, and is suitable for assembling the double-glass photovoltaic modules. Multiple performances, such as glass transition temperature and light transmittance, of the novel organic silica gel film are higher that those of a PVB or PVA material packaging material, and the performances are relatively stable after moist heat and thermo-oxidative aging of the novel organic silica gel film.

The invention discloses a method for calculating the photoelectric absorption cross-section index of a stratum based on X-ray litho-density logging. The method adopts an X-ray litho-density logging device and comprises the following steps that 1, X rays released by an X-ray source have a photoelectric effect and Compton scattering effect with the stratum, and are then received by a detector, the X-ray spectrum detected by the detector is taken as a basis to select and count low-energy windows and high-energy windows as NL and NH respectively, and then the photoelectric absorption cross-sectionindex U per volume of the stratum is calculated; and 2, the relation between the volume and the photoelectric absorption cross-section index is utilized, wherein Pe can be represented as Pe=U / rho e,and rho e represents the electron density index of the stratum. During X-ray litho-density logging, rho e serves as one of the measurement parameters, and can be regarded as a known number when the photoelectric absorption cross-section index is calculated. By means of the method, the influence of the density of the stratum on the measurement of the photoelectric absorption cross-section index Peof the stratum can be effectively eliminated, and the measurement accuracy is greatly improved.

The invention relates to a photochromic ink-based bank note detection method and provides a photochromic ink-based detecting and anti-counterfeiting means specific to variable-color optically-variable figures and variable-color optically-variable safety lines on 2015-edition Chinese 100 yuan banknotes. The method specifically comprises the steps of placing a to-be-detected bank note on a horizontal plane; irradiating the white light onto the photochromic ink part of the to-be-detected bank note by an LED white-light lamp, and reflecting and driving the white light to leave the photochromic ink part of the to-be-detected bank note after the refraction, the reflection and the interference of the light; respectively arranging a photoelectric absorption device right above and obliquely above the photochromic ink part of the to-be-detected bank note that is irradiated by the white light; respectively and electrically connecting the above two photoelectric absorption devices with a photoamplifier circuit, switching on a photoelectric signal processing system and a recognition processing system, amplifying an electrical signal, sending the amplified electrical signal to the photoelectric signal processing system and the recognition processing system for comparison and judgment, recognizing whether the photochromic ink of the to-be-detected bank note is normal or not, and judging the authenticity of the to-be-detected bank note. According to the method, the method has the advantages of fast detection speed, strong pertinence and good anti-counterfeiting effect.

The invention relates to a high-efficiency thin-film solar component battery structure and an implementation method thereof, and belongs to the technical field of solar battery application. The technical scheme is as follows: the high-efficiency thin-film solar component battery structure comprises a piece of substrate glass, a front electrode film, a photoelectric absorption layer, a back electrode film, a packaging film and a back board; each photoelectric unit is connected in series to form two or more sets of photoelectric battery parts and then each photoelectric battery part is connected in parallel to form an integral thin-film component structure by adjusting etching times and etching positions of laser isolation channels, namely, each photoelectric unit is connected in series and then connected in parallel to form the integral component battery structure. In the invention, under the precondition that the power is basically not weakened, output voltage of the component can be efficiently reduced by adjusting the series and parallel connection structure among the photoelectric units in the thin-film solar battery component, and the matching flexibility of the thin-film battery component and fittings of a photovoltaic power generation system, such as an inverter, a controller and a storage battery; moreover, the BOS (basic operation system) cost of the system is reduced, and simultaneously the shading resistance performance of the component is efficiently improved.

The invention discloses a rapid lithology identification method for calculating relative percentage content of quartz. The rapid lithology identification method comprises the following steps of 1) acquiring the chipping component information of quartz, feldspar and rock debris; 2) determining the sandstone type of the reservoir in the research area; 3) establishing a division standard for determining the sandstone types based on the relative percentage content of quartz; 4) selecting the compensation density, the photoelectric absorption cross section index and the deep resistivity as the sensitive logging curves reflecting the reservoir lithology; 5) establishing a nonlinear mapping relation model between the logging curve of the compensation density, the photoelectric absorption cross section index and the deep resistivity and the quartz relative percentage content; and 6) determining the relative percentage content of quartz in the prediction well, and performing the lithology identification according to the division standard of determining the sandstone type based on the relative percentage content of quartz, so that the rapid identification of the quartz property can be accurately realized based on the relative percentage content of quartz.

The invention relates to a package structure of a variable optical attenuator multiplexer. The package structure of the variable optical attenuator multiplexer comprises a package box composed of an upper cover and a lower bottom, wherein a control circuit board is fixed to the lower bottom, a silicon waveguide mode array variable optical attenuator and an array waveguide optical grating are fixed to the control circuit board, and a fiber channel of the silicon waveguide mode array variable optical attenuator and a fiber channel of the array waveguide optical grating are correspondingly connected through fibers. Meanwhile, the invention relates to a manufacturing method of the package structure. The silicon waveguide mode array variable optical attenuator based on the photoelectric absorption effect is adopted to manufacture the variable optical attenuator multiplexer, the reliability is good, the response speed is high, the response time reaches the microsecond level, heating is not required, and power consumption is lower.

A thin-film solar cell comprises a glass substrate, a transparent conductive layer, a photoelectric absorption layer and a back electrode layer sequentially from bottom to top, and is characterized in that the transparent conductive layer is made of metal nanowires; the photoelectric absorption layer is an amorphous silicon, a microcrystalline silicon or a cadmium telluride thin film. According to the thin-film solar cell of the invention, the metal nanowire replaces a semiconductor transparent conductive film, such as AZO, ITO, FTO and the like, and thus, at the transmittance premise, resistance of the film layer is greatly reduced, lateral collection of photocarriers is more facilitated, resistance of a cell device is reduced, and the photoelectric conversion efficiency of the solar cell is improved.

The invention belongs to the technical field of preparing titanium dioxide film materials, in particular provides an iodine-doped titanium-based film comprising an iodine-doped TiO2 nanocrystalline film and an iodine-doped TiO2 nanocrystalline / bulky grain film, wherein the iodine-doped TiO2 nanocrystalline film is obtained by filming sizing agent which contains TiO2 nanocrystalline with grain diameter ranging from 5 to 35 nm and has the molar ratio of iodine to titanium ranging from 0.01 to 0.5:1, and the iodine-doped TiO2 nanocrystalline / bulky grain film is obtained by filming sizing agent which contains iodine-doped TiO2 nanocrystalline with grain diameter ranging from 5 to 35 nm and iodine-doped TiO2 bulky grain with grain diameter ranging from 400nm to 5 micrometers and has the weightratio of iodine-doped TiO2 bulky grain to iodine-doped TiO2 nanocrystalline ranging from 0.01 to 0.3:1 as well as the molar ratio of iodine to titanium ranging from 0.01 to 0.5 :1. The invention is easy to be implemented, and the obtained film has strong adsorption capacity, visible light response and high photoelectric absorption efficiency.

The embodiment of the invention provides a compound solar cell containing a superlattice structure back field, and belongs to the technical field of solar cells. The highly doped tunnel junction region of the solar cell comprises a highly n-type doped n++ layer and a highly p-type doped p++ layer which are sequentially arranged from bottom to top, the back field region comprises a superlattice structure formed by an InAlAs layer and an InP layer pair, the p layer of the photoelectric absorption region adopts Iny1Ga1-y1Asx1P1-x1, 0<=x1<=1, 0<=y1<=1, the doping element is Zn, Mg, Be or C, and the doping concentration is 5*1015cm-3-1*1017cm-3. According to the solar cell, the energy band arrangement of the photoelectric absorption region and the back field is changed, multiple interfaces contained in the doped wide-band gap material InAlAs and narrow-band gap material InP superlattice effectively inhibit the influence of diffusion of a highly-doped tunnel junction region on a photoelectric absorption conversion region, the reduction of the open-circuit voltage of the solar cell caused by diffusion is decreased, and the quality of the pn junction of the photoelectric conversion absorption region is improved, so that the efficiency of the solar cell is improved.

The invention relates to the field of power network dispatching optimization, in particular to a power system optimal dispatching method considering photoelectric access, comprising the following steps: A) making a plan ahead of schedule; B) dividing a day into time periods accord to time T as a unit, establishing and initializing each photoelectric field quality score Kw, updating that day-aheadplan accord to each photoelectric field quality score Kw to form an intra-day plan; C) real-time controlling that conventional unit to execute the intra-day plan within the time period, tracking the output of each photoelectric field and the output level of the conventional unit, calculate the photoelectric absorption income E at the end of the time period, updating the quality score Kw of each photoelectric field according to E, and repeating the step B-C until the day's scheduling is complete. By setting the quality score of the photoelectric field and tracking the actual effect of photoelectric dissipation, and feeding back to the intraday plan, the photoelectric dissipation is more active and the economic benefit of the photoelectric field is brought into full play.

The invention provides a treating agent after film formation of a photoelectric absorption conversion layer of a CIGS thin-film solar cell. The treating agent is formed by mixing the following ingredients: water, sodium hydroxide, potassium hydroxide, ferric chloride, thiourea and ammonium hydroxide. The use method comprises the following steps: stirring and heating the treating agent to 40-90 DEG C; immersing a substrate with a solar cell CIGS photoelectric absorption conversion layer film into the treating agent for 20-60 minutes, and constantly swinging so as to enable the ingredients of the treating agent at the periphery of the thin film to be uniform; taking out the treated substrate, repeatedly flushing with deionized water until the resistance value of the deionized water is not less than 10 M ohm; removing residual water spots on the substrate by use of a mechanical spin-drying method, and baking for 10 minutes in an oven with the temperature of 150 DEG C . By virtue of utilizing the treating method and the use method which are provided by the invention to treat the photoelectric absorption conversion layer, precipitation of copper element in the thin film and reaction between surface copper element and oxygen are inhibited, so that the conversion efficiency is improved and an aging phenomenon of the thin film is avoided.

The invention relates to a laminated two-color infrared focal plane detector and a preparation method thereof and belongs to the technical field of semiconductor photoelectronic devices. A distributedBragg reflector structure is introduced into a laminated InAs / GaSb two-color superlattice structure photosensitive chip; and infrared light, which is not completely absorbed, of laminated two-color photosensitive absorption regions is reflected separately, so that the infrared light returns to the absorption regions again. Reflector layers are adopted by two channels of the laminated two-color infrared detector, so that the photoelectric absorption efficiency of the corresponding channel of the chip is improved and the target of improving the performance index of the device is achieved, and meanwhile, the difficulty in epitaxial growth of a first channel epitaxy structure layer and a second channel epitaxy structure layer is correspondingly reduced.

A signal processing method is disclosed, which includes detecting a total intensity of X-rays passing through an object comprising multiple materials; obtaining at least one set of basis information of basis material information of the multiple materials and basis component information of photon-electric absorption basis component and Compton scattering basis component of the object; estimating a scatter intensity component of the detected X-rays based on the at least one set of basis information and the detected total intensity; and obtaining an intensity estimate of primary X-rays incident on a detector based on the detected total intensity and the estimated scatter intensity component. An imaging system adopting the above signal processing method is also disclosed.

The invention discloses a vacuum tube, comprising an electronic emitter. A photoelectric absorption face is arranged around the outer periphery of the center of the electronic emitter of the vacuum tube. The invention provides a technique for reducing useless light in a display and is especially suitable for a sphere focus style. The invention provides a technique which is good for the stable and continuous work of vacuum tube, good for prolonging service life and reducing corresponding electronic circuit load or the electronic circuit load of corresponding instruments and equipments.

The present invention discloses a solar support with an adjustable angle, which comprises a solar support main body which is composed of a hydraulic lifting pipe arranged at the top of the solar support main body and a fixed mounting bracket arranged at the bottom of the solar support main body. A plurality of uniformly distributed battery plate holders are arranged on the side surface of the solar support main body. The battery plate holders are arranged in parallel and are fixedly connected with the solar support main body. The solar support with the adjustable angle is designed as a wholly-movable structure. The solar support main body is adjusted in angle by a hydraulic lifting pipe, which not only facilitates the installation of the solar battery, but also enables the solar battery to better perform photoelectric absorption conversion treatment by changing the angle, thereby improving the power generation efficiency of the solar support with the adjustable angle.

The invention relates to a laminated two-color infrared focal plane detector and a preparation method thereof and belongs to the technical field of semiconductor photoelectronic devices. A distributedBragg reflector structure is introduced into a laminated InAs / GaSb two-color superlattice structure photosensitive chip; and infrared light, which is not completely absorbed, of laminated two-color photosensitive absorption regions is reflected separately, so that the infrared light returns to the absorption regions again. Reflector layers are adopted by two channels of the laminated two-color infrared detector, so that the photoelectric absorption efficiency of the corresponding channel of the chip is improved and the target of improving the performance index of the device is achieved, and meanwhile, the difficulty in epitaxial growth of a first channel epitaxy structure layer and a second channel epitaxy structure layer is correspondingly reduced.

The invention discloses a vacuum tube, comprising an electron gun. An electron absorption material or infrared or far infrared absorption material is painted in the electron gun of the vacuum tube, or the electron absorption material coat is connected with a discharging circuit or a radar material absorbing electrons, or infrared or far infrared is painted in the vacuum tube, or the infrared or far infrared coat is the cathode either of a photoelectric cell or of a photoelectricity absorption face, and a photoelectricity shift discharging circuit is provided. The invention provides a technique which reduces useless electron wave beams sent by the vacuum tube to reach a display or reduces the infrared or far infrared wave beam impacting imaging quality to reach the display to ensure a better imaging quality of the display. The effect of the invention can be especially reflected on a high definition display.

The invention relates to the technical field of superlattice magneto-optical materials, in particular to a superlattice material and its preparation method and application. According to the records of the embodiments, the superlattice material provided by the present invention has both the good magnetic properties of ferrous garnet materials and the good photoelectric absorption characteristics of two-dimensional semiconductor materials such as graphene, and the magneto-optical Kerr effect data obtained by the test shows that , the saturation magneto-optic Kerr angle of the superlattice material of the present invention under the 2500Oe magnetic field is 13mdeg, compared with the non-superlattice ferrimagnetic thin film material that does not insert two-dimensional material, its magneto-optic Kerr angle improves 2.5 times, realizing the enhancement of the magneto-optic effect.

The invention discloses a solar cell based on an oxygen-doping zinc telluride nanowire array. The solar cell comprises an n-type AZO transparent conducting thin film coaxially coated with a zinc oxide layer, an oxygen-doping zinc telluride layer and a zinc telluride layer at the top end of the nanowire array, the nanowire array coaxially coated with the zinc oxide layer, the oxygen-doping zinc telluride layer and the zinc telluride layer, a PMDS supporting layer coated at the bottom end of the nanowire and a p-type doping high-conductivity monocrystalline silicon layer substrate from top to bottom in sequence; the nanowire array coaxially coated with the zinc oxide layer, the oxygen-doping zinc telluride layer and the zinc telluride layer with intermediate area characteristics are used as a photoelectric absorption layer; and electrodes are led out on the AZO transparent conducting thin film and the p-type doping high-conductivity monocrystalline silicon layer respectively.

The invention belongs to the field of petroleum and natural gas, and in particular relates to a method for determining the tuffaceous content of high gamma sandstone. Establish the volume model of the rock and the volume model of each component of the rock, and form a method for determining the tuffaceous content based on the nested volume model. The steps are as follows: standardize the logging data; and shale composition and content; use the photoelectric absorption cross-section index-natural gamma ray method to identify high-gamma sandstone reservoir intervals using well logging curves; select well logging curves to determine the tuffaceous content; use the nested volume model to determine the rock skeleton The logging parameters of the well; the nested volume model is used to determine the logging response parameters of tuffaceous matter; the nested volume model is used to determine the logging response parameters of shale; the well logging response parameters of pores are determined according to the fluid type; the rock volume model equation is established, Determine the tuffaceous content; the present invention adopts a nested two-layer volume model, and the interpretation result is more accurate.

The invention discloses a method for preparing photoelectric absorption and conversion layers of copper, indium, gallium and selenium thin film solar cells.The method sequentially includes basic steps of 1), depositing each copper and gallium alloy thin film by the aid of processes for physically sputtering and depositing thin films under vacuum conditions; 2), carrying out selenation treatment on the copper and gallium alloy thin films in vacuum evaporation film coating selenium steam environments; 3), depositing indium and selenium elements on the thin films by the aid of vacuum co-evaporation processes after the thin films are subjected to selenation treatment; 4), depositing a small quantity of gallium on the thin films by the aid of vacuum evaporation processes to regulate electric properties of the photoelectric absorption and conversion layers of the copper, indium, gallium and selenium thin film solar cells.

The invention provides an optical module. The optical module comprises a circuit board; a light emitting assembly which is electrically connected with the circuit board and used for generating signal light; an MCU which is arranged on the circuit board and is used for outputting an enabling control signal; a direct-current driving current source which is arranged on the circuit board and outputs direct-current driving current; and an enabling circuit which is arranged on the circuit board, wherein a first input end of the enabling circuit receives an enabling control signal, a second input end of the enabling circuit receives the direct-current driving current, and an output end of the enabling circuit is switched to output the direct-current driving current according to the enabling control signal. The light emitting assembly comprises a laser which emits light not carrying signals when the anode receives the direct-current driving current; and an electro-absorption modulator which is used for modulating and processing the light which does not carry the signal according to the electro-absorption modulation signal to obtain signal light. According to the invention, through the enabling circuit, starting and stopping of light emitting work of the light emitting assembly are realized, rapid starting and stopping of the optical module are realized, and time requirements of an optical module protocol for starting time less than 1mS and stopping time less than 10uS are satisfied.