A stacked two-color infrared focal plane detector and its preparation method

An infrared focal plane and detector technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of incomplete absorption of incident infrared light, limited channel growth thickness, etc., to achieve easy DBR fabrication, The effect of improving photoelectric absorption efficiency and improving device performance index

Active Publication Date: 2019-10-08
中航凯迈上海红外科技有限公司
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Problems solved by technology

[0005] The purpose of the present invention is to provide a stacked two-color infrared focal plane detector to solve the problem that the current stacked two-color infrared focal plane detector cannot completely absorb the incident infrared light due to the limited growth thickness of the channel; the present invention also provides A kind of preparation method of stacked two-color infrared focal plane detector

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  • A stacked two-color infrared focal plane detector and its preparation method
  • A stacked two-color infrared focal plane detector and its preparation method

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Embodiment Construction

[0030] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0031] Embodiment of a stacked two-color infrared focal plane detector of the present invention

[0032] The present invention adopts reflection mirror layers for both channels of the laminated two-color infrared detector, so as to improve the photoelectric absorption efficiency of the corresponding channels. Such as figure 1 As shown, the stacked two-color infrared focal plane detector of the present invention includes a substrate 101, and on the substrate 101 are an epitaxial buffer layer 102, a first channel epitaxial structure layer 104, a first channel mirror layer 105, and a second channel The epitaxial structure layer 107, the capping layer 108 and the second channel mirror layer 110 also include a first channel electrode layer 103 located on the substrate 101, a common electrode layer 106 located on the first channel mirror layer 10...

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Abstract

The invention relates to a laminated two-color infrared focal plane detector and a preparation method thereof and belongs to the technical field of semiconductor photoelectronic devices. A distributedBragg reflector structure is introduced into a laminated InAs / GaSb two-color superlattice structure photosensitive chip; and infrared light, which is not completely absorbed, of laminated two-color photosensitive absorption regions is reflected separately, so that the infrared light returns to the absorption regions again. Reflector layers are adopted by two channels of the laminated two-color infrared detector, so that the photoelectric absorption efficiency of the corresponding channel of the chip is improved and the target of improving the performance index of the device is achieved, and meanwhile, the difficulty in epitaxial growth of a first channel epitaxy structure layer and a second channel epitaxy structure layer is correspondingly reduced.

Description

technical field [0001] The invention relates to a laminated two-color infrared focal plane detector and a preparation method thereof, belonging to the technical field of semiconductor optoelectronic devices. Background technique [0002] With the advancement of infrared technology, the demand for stacked two-color infrared detection devices is increasing. The use of laminated two-color infrared detectors, compared with the use of separate detectors or side-by-side mosaic infrared detectors, the infrared system has significant advantages in the simultaneous acquisition of target information and the same spatial position. The detector can make the prepared infrared system have the characteristics of compact structure, low power consumption and easy realization of optical common-aperture detection. For a typical stacked two-color infrared detector photosensitive chip structure, the InAs / GaSb type II superlattice structure is a chip structure that has received extensive attenti...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/18
CPCH01L31/101H01L31/18Y02P70/50
Inventor 司俊杰曹先存鲁正雄张利学侯治锦吕衍秋
Owner 中航凯迈上海红外科技有限公司
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