The invention relates to a plasm-aided
selenium sulfuration treatment device arranged in a
vacuum chamber. The plasm-aided
selenium sulfuration treatment device comprises a shell, a
cathode plate and an
anode plate, wherein the
cathode plate and the
anode plate are alternately stacked to form a plasm generator, the
cathode plate is provided with a groove for fixing a
semiconductor film substrate, and small holes are uniformly distributed on the surface of the
anode plate which is provided with a gas
pipe, an independent
internal heating electrode and an anode temperature-measuring point. The process based on the treatment device comprises the following steps of: (1) precasting a
metal layer on the
semiconductor film material according to the proportions of a
chemical formula and then putting in the groove of the cathode plate; and (2) putting in the
vacuum chamber to vacuumize, switching on a power supply to heat the cathode plate and the anode plate, switching on a power supply of the plasm generator and adding the mixed gases of
selenium or
sulfur,
hydrogen and
argon. The invention has the advantages that selenium ions have high reaction activity, the selenizing reaction of the
metal precast layer is complete, the
photoelectric conversion efficiency is high, and the substrate has lower
heating temperature and is hardly deformed. An electronic mode is adopted to monitor the change of capacitive
reactance between the two electrodes, know the conversion development and reduce the defective index of the industrial production.