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A novel undoped monocrystalline silicon heterojunction solar cell and a preparation method thereof

A solar cell, non-doped technology, applied in the field of solar cells, can solve problems such as high cost and complex process

Inactive Publication Date: 2018-12-11
ZHEJIANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, i-a-Si:H is often used as a passivation layer in silicon-based heterojunctions. The preparation of i-a-Si:H requires the use of dangerous gas-silane, which is complex and costly.

Method used

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  • A novel undoped monocrystalline silicon heterojunction solar cell and a preparation method thereof

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Embodiment

[0021] 1. Experimental materials

[0022] (1) n-type silicon wafer (CZ non-polished, 190μm, 0.8-5Ω.cm)

[0023] (2) Silica (purity > 99.9%)

[0024] (3) Molybdenum trioxide (purity 99.99%)

[0025] (4) Titanium dioxide (purity > 99.9%)

[0026] 2. Solar cell preparation steps

[0027] A. Silicon wafer cleaning: 4×4cm 2 The monocrystalline silicon wafers are cleaned by the standard RCA method, and each step is ultrasonically cleaned with deionized water for 2 minutes. The specific steps are as follows:

[0028] 1) Ultrasonic cleaning with acetone for 10 minutes;

[0029] 2) Ultrasonic cleaning with absolute ethanol for 10 minutes;

[0030] 3) Prepare a NaOH solution with a concentration of 25%, and heat it in a water bath at 80° C. for 20 minutes;

[0031] 4) with (29%) NH 4 OH:(30%)H 2 o 2 : Deionized water = 1:1:5 to prepare cleaning solution, heated in 80°C water bath for 10min;

[0032] 5) with (37%) HCl: (30%) H 2 o 2 : Deionized water = 1:1:5 to prepare clean...

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Abstract

The invention discloses a novel undoped monocrystalline silicon heterojunction solar cell and a preparation method thereof. The solar cell has the following structure: Ag / ITO / MoO3 / SiO2 / c-Si / TiO2 / Al; During the preparation, the silicon wafer is washed first, then the SiO2 passivation layer is deposited successively, the MoO3 is deposited, the TiO2 is deposited on the back side, the aluminum back side is deposited, the ITO is sputtered, and finally the gate line electrode is fabricated. SiO2 is inserted into MoO3 / c-Si interfacial layer, and TiO2 is inserted between c-Si / Al. The open-circuit voltage, short-circuit current and conversion efficiency of the device are higher than those of the reference battery.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a novel non-doped single crystal silicon heterojunction solar cell and a preparation method thereof. Background technique [0002] In the simplest crystalline silicon heterojunction solar cell, n-type and p-type hydrogenated amorphous silicon (a-Si:H) thin films on both sides of crystalline silicon (c-Si) are used to collect electrons and holes. To reduce the carrier recombination, a high-quality intrinsic hydrogenated amorphous silicon (i-a-Si:H) passivation layer is inserted between the c-Si and the doped a-Si:H films. In this structure, the front-end emitter material needs a higher bandgap width to ensure the transmission of sunlight, but the relatively narrow bandwidth (1.6-1.8ev) of a-Si:H and the high defect density of the doped layer make the parasitic Light absorption occurs in the ultraviolet and visible spectral ranges and affects device performance to some extent....

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0352H01L31/074H01L31/18
CPCH01L31/032H01L31/03529H01L31/074H01L31/1804Y02E10/547Y02P70/50
Inventor 黄仕华王佳芮哲池丹陆肖励
Owner ZHEJIANG NORMAL UNIVERSITY
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