Plasm-aided selenium sulfuration treatment device and process

Abstract

The invention relates to a plasm-aided selenium sulfuration treatment device arranged in a vacuum chamber. The plasm-aided selenium sulfuration treatment device comprises a shell, a cathode plate and an anode plate, wherein the cathode plate and the anode plate are alternately stacked to form a plasm generator, the cathode plate is provided with a groove for fixing a semiconductor film substrate, and small holes are uniformly distributed on the surface of the anode plate which is provided with a gas pipe, an independent internal heating electrode and an anode temperature-measuring point. The process based on the treatment device comprises the following steps of: (1) precasting a metal layer on the semiconductor film material according to the proportions of a chemical formula and then putting in the groove of the cathode plate; and (2) putting in the vacuum chamber to vacuumize, switching on a power supply to heat the cathode plate and the anode plate, switching on a power supply of the plasm generator and adding the mixed gases of selenium or sulfur, hydrogen and argon. The invention has the advantages that selenium ions have high reaction activity, the selenizing reaction of the metal precast layer is complete, the photoelectric conversion efficiency is high, and the substrate has lower heating temperature and is hardly deformed. An electronic mode is adopted to monitor the change of capacitive reactance between the two electrodes, know the conversion development and reduce the defective index of the industrial production.

Description

technical field [0001] The invention relates to a solar cell film material preparation technology, in particular to a plasma-assisted selenium vulcanization treatment device and process. Background technique [0002] copper indium selenide (CuInSe 2 Abbreviated as: CIS) or copper indium gallium selenide [Cu(InGa)(SeS) in which gallium and sulfur are solid-dissolved 2 Abbreviated as: CIGS] solar thin-film battery is a photovoltaic device composed of deposited multi-layer thin films on the substrate of ordinary soda-lime glass or polyimide film, metal sheet (aluminum, stainless steel, molybdenum foil, etc.). The structure is generally: glass substrate / metal molybdenum (Mo) back electrode / light absorbing layer (CIGS) / buffer layer [CdS, ZnS, ZnSe, In(OH) 3 , ZnS(O, OH), etc.] / high resistance intrinsic i-ZnO / conductive window layer [doped ZnO(ZnO:Al, ZnO:Ga, ZnO:B), SnO 2 , ITO (indium tin oxide), etc.] / metal grid electrode / anti-reflection film, etc. Wherein the quality that ...

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Problems solved by technology

But it has the following disadvantages: 1). The gaseous selenium formed by the solid-state selenium (or sulfur) source is mostly composed of Se 5 、Se 6 、Se 7 exist in the form of macromolecular groups or atomic clusters, and H 2 Compared with Se, the reaction activity is poor, the process is complicated, the reaction temperature is high, and it is close to the softening point of the glass substrate; 2). When the solid source selenium (or sulfide) is gasified, the gas is generated from a certain position. For large-area As far as the substrate is concerned, it is not easy to form a uniform distribution, and the uniformity of the formed film is very poor, which is difficult to be used for large-scale industrialization; 3). When the prefabricated layer metal Cu, In, and Ga are converted into compound semiconductor film materials, almost every The interrelationships between the atoms have changed, from the interatomic metal bond to the covalent bond. On the other hand, the selenium atom reacts with the metal prefabricated layer, its volume changes, and the interface in contact with Mo is displaced. , resulting in a severe decline in the binding force between the CIGS thin film and the Mo back electrode, which affects the next process of the semiconductor thin film battery and the quality of the final thin film device; 4). Metal gallium is generally formed in the form of copper gallium alloy and indium by sputtering to form a prefabricated layer , metal indium in the film is more likely to react than gallium during selenization, so it is easy to form CuInSe 2 , instead of Cu(In,Ga)Se 2 , causing Ga atoms to be driven to the bottom layer. On the other hand, Ga is more likely to combine with Mo, and Ga diffuses to the back electrode of Mo and cannot form a compound semiconductor. The open circuit voltage and photoelectric conversion efficiency are not high

[0006] The common disadvantages of gas phase selenium sulfide and solid source selenium sulfide are that the crystal quality or structure of the film is loose, the compactness is poor, the semiconductor polycrystalline film has many defect states, and the photoelectric conversion efficiency of the thin film battery is low.

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