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Method for preparing wide bandgap nanometer cadmium sulfide thin film

A cadmium sulfide, wide bandgap technology, applied in the field of new energy materials and its preparation, to achieve the effect of reducing short-wave absorption

Inactive Publication Date: 2012-02-15
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the energy gap of the window layer material CdS is 2.42eV, it will absorb short wavelengths less than 513nm, thus losing part of the incident light energy and reducing the efficiency of the cell.

Method used

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  • Method for preparing wide bandgap nanometer cadmium sulfide thin film
  • Method for preparing wide bandgap nanometer cadmium sulfide thin film
  • Method for preparing wide bandgap nanometer cadmium sulfide thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Use ITO glass soaked in organic solvent for many days as the substrate, clean the ITO glass with hot alkali solution (NaOH with a pH of 11-13, 50-80°C), and use ultrasonic cleaning technology, and use organic solvent ultrasonic 2-10 Minutes to clean, heated and dried, clamped vertically into the reaction vessel.

[0029] Add 1-10*10-3mol / L cadmium salt (commonly used sulfate, nitrate, chloride, acetate, etc.) 400ml deionized water, as indicated figure 1 Put a magnetic stirrer at the bottom of the container, start the magnetic stirrer and heat it to an appropriate temperature (70-90°C), add an appropriate amount of weak alkali solution (ammonia water) to adjust the pH to 9-11,. The reaction solution of the first step is formed.

[0030] 1. The concentration of liquid oxidizing additive is 1-10*10 -2 mol / L.

[0031] 2. After the weak base solution fully reacts, add 1-10*10 -2 mol / L oxidizing additive, the oxidant is organic peroxide (ROOH) (using peroxymonosulfuric ...

Embodiment 2

[0034] 1. Use ITO glass soaked in organic solvent for many days as the substrate, clean the ITO glass with hot alkali solution, clean it with ultrasonic waves, blow dry it, and put it vertically into the reaction vessel with clips.

[0035] 2. Add 1-10*10 to the container -3 mol / L cadmium salt and 1-10*10 -2 mol / L ammonium salt of the same acid group, then add 200ml deionized water, put a magnetic stirrer at the bottom of the container, start the magnetic stirrer and heat the temperature to an appropriate temperature, add an appropriate amount of ammonia water to adjust the pH value to 7-13.

[0036] 3. Add 1-50*10 after the weak base solution fully reacts -3 mol / L thiourea solution. After reacting for 8-30 minutes, add 1-10*10 -2 mol / L oxidizing additive, the oxidizing agent is organic peroxide (ROOH), organic peroxyacid (RCOOOH), ozone (O 3 ), periodate, 2%~30% hydrogen peroxide (H 2o 2 ), the amount added is 1% to 10% of the molar number of cadmium salt; when adding l...

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Abstract

The invention relates to a method for preparing a wide bandgap nanometer cadmium sulfide thin film, which comprises the following steps that: indium tin oxide (ITO) glass using as substrates is placed in a reaction container after organic solvent soaking, ultrasonic cleaning and drying, and oxidbillity additives are added into reaction solution; in the reaction solution preparation stage, cadmiumsalt and the same acid radical ammonium salt are added into the container, de-ionized water is then added, when the temperature is heated to 40 to 70 DEG C, the proper amount of weak base aqueous solution (ammonia solution) is added for producing cadmium complex compounds, and the reaction solution in the first step is formed; and the weak base solution is added, simultaneously, the oxidbillity additives are added, the additives are organic peroxide (ROOH), organic peroxyacetic acid (RCOOOH) and 2 percent to 30 percent of oxyful, and the addition quantity of the oxidbillity additives is 1 percent to 10 percent of the mol number of the cadmium salt. At the time, thiourea is then added, the light transmittance and the energy gap of the wide bandgap nanometer cadmium sulfide thin film are obviously improved, and window materials of copper indium gallium selenium batteries or cadmium telluride batteries can be more favorably manufactured.

Description

technical field [0001] The field of the invention is new energy materials and their preparation. Background technique [0002] Energy saving, emission reduction and low-carbon economy have become the focus of common attention all over the world. How to develop new energy sources with low emissions and environmental friendliness is a task that governments of all countries attach great importance to. The Chinese government has also positioned the new energy industry as one of the country's seven new strategic industries, which includes the solar photovoltaic industry. [0003] At present, the leading industrialized solar cell products are crystalline silicon solar cells, but the shortage of crystalline silicon materials and rising prices are the bottlenecks restricting the development of crystalline silicon solar cells, and crystalline silicon solar cells cannot be made into flexible cells, which restricts the application in special occasions. Therefore, thin-film solar ce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22
Inventor 吕斌谢儒彬林敏符敏吴小山
Owner NANJING UNIV
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