Laminated structure of copper-zinc-tin-sulfur film solar cell and preparation method thereof

A solar cell, copper-zinc-tin-sulfur technology, applied in the manufacture of circuits, electrical components, final products, etc., can solve problems such as low open circuit voltage and fill factor, and achieve the effect of increasing series resistance and flat and smooth surface

Active Publication Date: 2013-12-04
SHAANXI COAL & CHEM TECH INST
View PDF7 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the difference lies in the lower open circuit voltage and fill factor of CZTS cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laminated structure of copper-zinc-tin-sulfur film solar cell and preparation method thereof
  • Laminated structure of copper-zinc-tin-sulfur film solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0035] Step 1. In the order of acetone, methanol, and isopropanol, clean a square substrate glass with a side length of 2 cm with high light transmittance (light transmittance > 80%) with the above three reagents for analytical purity, and blow dry with nitrogen .

[0036] Step 2. Evaporating silver / nickel alloy grids on the glass substrate by vacuum evaporation method.

[0037] Step 3. Next, magnetron sputtering is used to sputter an indium tin oxide (ITO) transparent conductive layer on the silver / nickel alloy grid side of the glass substrate, with a layer thickness of 150 nanometers.

[0038] Step 4, depositing an n-type cadmium sulfide buffer layer on the indium tin oxide layer with a chemical bath method, with a layer thickness of 50 nanometers.

[0039] Step 5, continue to prepare a uniform and dense p-type copper-zinc-tin-sulfur absorption layer on the n-type buffer layer by thermal injection spraying method, with a layer thickness of about 2 microns, thereby forming a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to view more

Abstract

A laminated structure of a copper-zinc-tin-sulfur film solar cell and a preparation method thereof are disclosed. The laminated structure of the copper-zinc-tin-sulfur film solar cell comprises substrate glass, a transparent conductive layer deposited on the substrate glass, an n-type buffer layer deposited on the transparent conductive layer, a p-type copper-zinc-tin-sulfur absorbing layer deposited on the n-type buffer layer, a molybdenum sulfide interface layer deposited on a p-type copper-zinc-tin-sulfur absorbing layer, and a metal back electrode layer deposited on the molybdenum sulfide interface layer.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor thin-film solar cells, in particular to a stacked structure of copper-zinc-tin-sulfur (CZTS) thin-film solar cells. 【Background technique】 [0002] Solar cells are considered to be one of the most effective solutions to the energy crisis. Thin-film solar cells have the advantages of less material consumption, low cost, light weight, flexible substrates can be used, and are suitable for special occasions. In recent years, it has attracted widespread attention from the scientific and industrial circles and has become a research hotspot. Copper indium gallium selenide (CIGS) thin film solar cells have achieved conversion efficiencies as high as 20%. It has also exceeded 10% in industrial scale production. However, such batteries are expensive to manufacture. In particular, metal indium is a rare metal, and the global production is small, which is not enough to support the further large-scale applic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/18
CPCY02P70/50
Inventor 常远程
Owner SHAANXI COAL & CHEM TECH INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products