8 results about "CZTS" patented technology

The invention relates to the technical field of solar cells, in particular to a CZTSSe absorption layer film and a preparation method and application thereof, and the preparation method comprises the following steps: S1, preparing a CZTS precursor solution of a DMF solution system; s2, preparing a CZTS precursor film by adopting a sol-gel method; and S3, coating the CZTS precursor thin film with a NaF solution with the concentration of 0-0.2 mol / L, and then carrying out drying and selenylation treatment to obtain the CZTSSe absorption layer thin film. According to the invention, the CZTS precursor film prepared by using the green and environment-friendly solvent DMF is used for carrying out a NaF solution spin-coating annealing process, so that the improvement of the battery efficiency is successfully realized. The change of CZTSSe film element redistribution, defect chemical environment and grain boundary potential difference after the Na element is doped is avoided.

To provide a photoelectric conversion element capable of securing a desired photoelectric conversion amount.SOLUTION: The photoelectric conversion element 10 includes a first photoelectric conversion layer 26a and a second photoelectric conversion layer 26a on the first photoelectric conversion layer 26b. The first photoelectric conversion layer 26a includes CIS-based or CZTS-based compound semiconductors. The second photoelectric conversion layer 26b includes CIS-based or CZTS-based compound semiconductors.SELECTED DRAWING: Figure 2

The application discloses a CZTSSe thin film solar cell for regulating Na diffusion path and a preparation method thereof, and relates to the technical field of solar cells. The cell is sequentially provided with a SLG / SiO2 / Mo substrate assembly, a CZTSSe absorption layer, a CdS buffer layer, an intrinsic zinc oxide layer, an ITO window layer and an Ag electrode from bottom to top. The application realizes controllable regulation of the Na diffusion path by arranging the SiO2 barrier layer, realizes one-way diffusion of Na from top to bottom (SLG / SiO2 / Mo substrate), and solves the problems of uncontrollable Na diffusion and uneven distribution in the prior art. The Na2S2O3 aqueous solution is used as a front interface Na source, has small corrosion on the surface of the CZTS precursor, can accurately regulate the content of Na element, and effectively improves the crystal interface and bulk phase quality of the CZTSSe absorption layer.

The application belongs to the technical field of photoelectric material new energy, and particularly relates to a copper-zinc-tin-sulfur-selenium film prepared by a variable-temperature sulfur-seleniumization process, a method and a solar cell. The application adopts a variable-temperature sulfur-seleniumization mode to prepare a copper-zinc-tin-sulfur-selenium (CZTS) absorption layer film, comprehensively uses the advantages of high temperature and low temperature, optimizes a crystal grain growth process, and prepares the absorption layer film with a smooth surface, fewer holes and dense distribution. The film is used as the absorption layer film of the solar cell, and finally the copper-zinc-tin-sulfur-selenium film solar cell with high efficiency is prepared.

The utility model relates to the technical field of new energy, in particular to a Cu2ZnSnS4 (CZTS) thin film solar cell device with a top lining structure. The structure of the device sequentially comprises a top electrode, a window layer, a hole transport layer, a buffer layer, an absorption layer and a back electrode from top to bottom, wherein the absorption layer is a Cu2ZnSnS4 film; the top lining structure Cu2ZnSnS4 thin film solar cell device is innovatively designed in shape and structure, the photoelectric conversion efficiency is improved, the preparation process is simplified, the material utilization rate and the cell stability are improved, and a new opportunity is provided for development and application of the Cu2ZnSnS4 thin film solar cell.

The invention discloses a preparation method of a core-shell-surface ternary heterostructure nano material with enhanced thermoelectric catalytic activity, and belongs to the technical field of nano functional materials and preparation thereof. The problems that in an existing metal / semiconductor composite material, the interface structure level is single, the carrier migration behavior is difficult to effectively regulate and control under the thermoelectric or photo-thermal-thermoelectric driving condition, and the precious metal modification stability is insufficient are solved. The technical defects that a traditional semiconductor material is low in energy utilization efficiency and limited in interface reaction regulation and control capacity under the thermal excitation condition are overcome. The method comprises the following steps: 1, preparing CZTS nanocrystals; 2, preparation of the Au-coated CZTS NPs core-shell nano structure material; (3) preparation of the Au-coated CZTS-Pt heterostructure nano material; and 4, modifying the nano material. The method is used for preparing the core-shell-surface ternary heterostructure nanometer material with the enhanced thermoelectric catalytic activity.

The invention discloses a copper-zinc-tin-sulfur-selenium thin film, a preparation method thereof and a copper-zinc-tin-sulfur-selenium thin film solar cell comprising the copper-zinc-tin-sulfur-selenium thin film, and relates to the technical field of photoelectric material new energy. Comprising the following steps: adding a bivalent copper source and a bivalent tin source into a solvent, stirring and dissolving, adding thiourea and a zinc source, and stirring until the thiourea and the zinc source are completely dissolved to obtain a CZTS precursor solution; spin-coating the obtained CZTS precursor solution on a substrate plated with a back electrode, and then baking; spin coating and baking are repeated for 3-10 times, and a CZTS precursor film is obtained; and putting the CZTS precursor film into a graphite box filled with selenium particles, then heating to a selenylation temperature in a rapid annealing furnace, and finely controlling the selenylation temperature and time. According to the invention, through fine control of selenylation temperature and time, CZTSSe has a proper band gap and good electrical performance, high-efficiency light absorption and hole transport are realized, and the purpose of stably preparing the high-efficiency CZTSSe thin-film solar cell is realized.

The invention relates to the technical field of micro-nano structure processing and solar cells, in particular to a super-lens-based CZTS-based single-crystal solar cell and a preparation method and application of the super-lens-based CZTS-based single-crystal solar cell. Large-size CZTS-based single crystal particles are closely and uniformly arranged according to an array and then bonded into a layer through transparent glue such as epoxy resin, the two faces are ground and polished, all single crystal faces are exposed, then a CZTS-based light absorption layer is formed, and then a Mo film is prepared on one face of the CZTS-based light absorption layer through a sputtering method to serve as a back electrode. And preparing a buffer layer CdS, a window layer i-ZnO and the like on the other surface of the single crystal CZTS-based light absorption layer by using a CBD method and a sputtering method respectively. According to the CZTS-based single-crystal solar cell, incident light is more efficiently focused on the crystal face of the CZTS-based single-crystal particles through the super-lens array, the efficiency of the CZTS-based single-crystal solar cell is improved, and a design method is provided for preparing the high-efficiency CZTS-based single-crystal solar cell.