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4 results about "CZTS" patented technology
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Copper zinc tin sulfide (CZTS) is a quaternary semiconducting compound which has received increasing interest since the late 2000s for applications in thin film solar cells. The class of related materials includes other I₂-II-IV-VI₄ such as copper zinc tin selenide (CZTSe) and the sulfur-selenium alloy CZTSSe. CZTS offers favorable optical and electronic properties similar to CIGS (copper indium gallium selenide) making it well suited for use as a thin-film solar cell absorber layer, but unlike CIGS (or other thin films such as CdTe), CZTS is composed of only abundant and non-toxic elements. Concerns with the price and availability of indium in CIGS and tellurium in CdTe, as well as toxicity of cadmium have been a large motivator to search for alternative thin film solar cell materials. Recent material improvements for CZTS have increased the efficiency to 12.6% in laboratory cells, but more work is needed for their commercialization.
Photoelectric conversion element, moving body, power generation system, and power generation method
To provide a photoelectric conversion element capable of securing a desired photoelectric conversion amount.SOLUTION: The photoelectric conversion element 10 includes a first photoelectric conversion layer 26a and a second photoelectric conversion layer 26a on the first photoelectric conversion layer 26b. The first photoelectric conversion layer 26a includes CIS-based or CZTS-based compound semiconductors. The second photoelectric conversion layer 26b includes CIS-based or CZTS-based compound semiconductors.SELECTED DRAWING: Figure 2
Owner:IDEMITSU KOSAN CO LTD
A cztsses thin film solar cell regulating na diffusion path and a preparation method thereof
The application discloses a CZTSSe thin film solar cell for regulating Na diffusion path and a preparation method thereof, and relates to the technical field of solar cells. The cell is sequentially provided with a SLG / SiO2 / Mo substrate assembly, a CZTSSe absorption layer, a CdS buffer layer, an intrinsic zinc oxide layer, an ITO window layer and an Ag electrode from bottom to top. The application realizes controllable regulation of the Na diffusion path by arranging the SiO2 barrier layer, realizes one-way diffusion of Na from top to bottom (SLG / SiO2 / Mo substrate), and solves the problems of uncontrollable Na diffusion and uneven distribution in the prior art. The Na2S2O3 aqueous solution is used as a front interface Na source, has small corrosion on the surface of the CZTS precursor, can accurately regulate the content of Na element, and effectively improves the crystal interface and bulk phase quality of the CZTSSe absorption layer.
Owner:INNER MONGOLIA UNIVERSITY
Cu2ZnSnS4 thin film solar cell device with top lining structure
The utility model relates to the technical field of new energy, in particular to a Cu2ZnSnS4 (CZTS) thin film solar cell device with a top lining structure. The structure of the device sequentially comprises a top electrode, a window layer, a hole transport layer, a buffer layer, an absorption layer and a back electrode from top to bottom, wherein the absorption layer is a Cu2ZnSnS4 film; the top lining structure Cu2ZnSnS4 thin film solar cell device is innovatively designed in shape and structure, the photoelectric conversion efficiency is improved, the preparation process is simplified, the material utilization rate and the cell stability are improved, and a new opportunity is provided for development and application of the Cu2ZnSnS4 thin film solar cell.
Owner:GUANGDONG POLYTECHNIC OF IND & COMMERCE
Preparation method of core-shell-surface ternary heterostructure nano material with enhanced thermoelectric catalytic activity
The invention discloses a preparation method of a core-shell-surface ternary heterostructure nano material with enhanced thermoelectric catalytic activity, and belongs to the technical field of nano functional materials and preparation thereof. The problems that in an existing metal / semiconductor composite material, the interface structure level is single, the carrier migration behavior is difficult to effectively regulate and control under the thermoelectric or photo-thermal-thermoelectric driving condition, and the precious metal modification stability is insufficient are solved. The technical defects that a traditional semiconductor material is low in energy utilization efficiency and limited in interface reaction regulation and control capacity under the thermal excitation condition are overcome. The method comprises the following steps: 1, preparing CZTS nanocrystals; 2, preparation of the Au-coated CZTS NPs core-shell nano structure material; (3) preparation of the Au-coated CZTS-Pt heterostructure nano material; and 4, modifying the nano material. The method is used for preparing the core-shell-surface ternary heterostructure nanometer material with the enhanced thermoelectric catalytic activity.
Owner:HARBIN ENG UNIV