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Low-cost preparation method of CZTS (Cu2ZnSnS4) thin film solar battery absorption layer

A copper-zinc-tin-sulfur and absorbing layer technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve problems such as the difficulty in realizing the ideal stoichiometric ratio of each component of the final product, and solve the problems of cost and environmental pollution and improve safety effect

Inactive Publication Date: 2012-01-04
ZHANJIANG NORMAL UNIV
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Problems solved by technology

[0004] Copper-zinc-tin-sulfur thin films are prepared by the commonly used vulcanization method. Due to the different volatility properties of the intermediate products (zinc sulfide, tin sulfide), the atomic ratio of the three metal components in the final product will be greatly different from that in the precursor. changes, making it difficult to achieve the ideal stoichiometric ratio of the components of the final product

Method used

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Embodiment approach

[0017] The embodiment is described in conjunction with an example, and the specific preparation process is as follows:

[0018] Metal precursor deposition:

[0019] 1. The substrate is made of ordinary glass, soaked in alcohol or acetone organic solvent, ultrasonically cleaned, and dried;

[0020] 2. Evaporation of the precursor is carried out on an ordinary vacuum coating machine, and the substrate is not heated. The system vacuum is higher than 2×10 -3 Pa; the evaporation temperature is controlled by the current source;

[0021] 3. Put metal zinc, tin and copper into the molybdenum boat, the atomic ratio of copper / zinc+tin is 0.9, Zn / Sn is 1.1, adjust the evaporation time to make the evaporation source completely evaporate. The distance between the evaporation source and the substrate is 25~35cm, in order to increase the uniformity of the film, the substrate can be rotated at a constant speed;

[0022] Precursor vulcanization:

[0023] 1. The vulcanization process is c...

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Abstract

The invention relates to a low-cost preparation method of a CZTS (Cu2ZnSnS4) thin film solar battery absorption layer, belonging to the technical field of semiconductor photoelectric materials and devices. The method is characterized by preparing a metal precursor of Cu, Zn and Sn by adopting a common evaporation method; and vulcanizing the front precursor in sulfur vapor so as to get a polycrystalline CZTS thin film, wherein the prepared polycrystalline CZTS thin film has a similar stannite structure and a direct band gap width adaptive to the solar spectrum, absorption coefficient for visible light, and the characteristics of electrical resistivity, carrier mobility and the like, and the CZTS thin film is suitable for being taken as the thin film solar battery absorption layer. Raw materials for preparing the CZTS thin film solar battery absorption layer by adopting the method have rich sources and are non-toxic, the preparation technology is simple, the performances of a thin film are easy to control, and the method is suitable for scale chemical engineering production.

Description

technical field [0001] The invention relates to a low-cost preparation method for the absorbing layer of a copper-zinc-tin-sulfur thin film solar cell, especially copper-zinc-tin-sulfur (Cu 2 ZnSnS 4 , referred to as CZTS) thin-film solar cell absorption layer preparation method, which belongs to the technical field of semiconductor optoelectronic materials and devices. Background technique [0002] In recent years, with the gradual depletion of limited non-renewable resources such as oil and coal on the earth, the utilization and development of renewable energy has become more and more urgent. Among them, solar photovoltaic power generation will inexhaustibly radiate to the ground. Solar energy is continuously converted into electrical energy through the photoelectric conversion of photovoltaic devices such as solar cells, and has become the safest, most environmentally friendly and most potential competitor in renewable energy. At present, the bottleneck restricting the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 邵乐喜
Owner ZHANJIANG NORMAL UNIV
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