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Precursor solution for preparing the highly-efficient CZTS solar cell, preparation and application of the precursor solution

A technology of precursor solution and solar cells, which is applied in the field of solar cells to achieve high quality and improve photoelectric conversion efficiency.

Inactive Publication Date: 2018-08-28
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

According to Hillhouse's report, although the The chemical reaction converts Cu 2+ reduced to Cu + , but due to the reversibility of the reaction and the molar ratio of the precursor compound is Cu(OAc) 2 ·H 2 O: SnCl 2 2H 2 O=0.8:0.56, the solution still contains Sn 2+

Method used

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  • Precursor solution for preparing the highly-efficient CZTS solar cell, preparation and application of the precursor solution
  • Precursor solution for preparing the highly-efficient CZTS solar cell, preparation and application of the precursor solution
  • Precursor solution for preparing the highly-efficient CZTS solar cell, preparation and application of the precursor solution

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Embodiment

[0073] The embodiments of the present invention are described in detail below. This embodiment is implemented under the premise of the technical solution of the present invention, and detailed implementation methods and specific operating procedures are provided, but the protection scope of the present invention is not limited to the following examples .

[0074] The present invention can be better understood from the following examples. However, those skilled in the art will readily understand that the specific material ratios, process conditions and results described in the examples are only used to illustrate the present invention, and should not and will not limit the present invention described in detail in the claims .

[0075] 1. Preparation of precursor solution.

[0076] Preparation scheme one. First prepare precursor solution 1, measure 4mL dimethyl sulfoxide DMSO into the reagent bottle, add 1.5602g (20.4mmol) thiourea, stir at room temperature to completely diss...

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Abstract

The invention discloses a precursor solution for preparing the highly-efficient CZTS solar cell as well as preparation and application of the precursor solution. The precursor solution is composed ofdimethyl sulfoxide (DMSO), thiourea and a precursor compound, wherein the precursor compound comprises a monovalent copper compound, a tetravalent tin compound and a bivalent zinc compound; with DMSOas a solvent, thiourea, a monovalent copper compound, the tetravalent tin compound and the bivalent zinc compound are dissolved in DMSO to prepare a clear transparent precursor solution. The inventionis advantageous in that a precursor solution is prepared by using a monovalent copper compound and a tetravalent tin compound for CZTS light-absorbing material with high quality and no impurity phase, so that the photoelectric conversion efficiency of the CZTS thin-film solar cell is improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a precursor solution for preparing high-efficiency CZTS solar cells and a cell preparation method and application thereof. Background technique [0002] In the past few decades, cadmium telluride (CdTe) 1 and copper indium gallium selenide (CIGS) 2 Thin-film solar cells, which are light-absorbing layer materials, have been developed rapidly and have been commercially produced. At present, the highest photoelectric conversion efficiency of cadmium telluride thin film solar cells obtained in the laboratory reaches 22.1%. 3 , copper indium gallium selenide battery up to 22.6% 4 , have exceeded the efficiency of polysilicon cells. The continuous growth of photoelectric conversion efficiency makes compound thin-film solar cells expected to compete with crystalline silicon solar cells. However, the severe toxicity of Cd element and the scarcity of In, Ga, and Te el...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L21/02H01L31/18C01G19/00C01G11/02
CPCC01G11/02C01G19/00C01P2002/72C01P2004/03C01P2006/40H01L21/02568H01L21/02628H01L31/0326H01L31/18Y02E10/50Y02P70/50
Inventor 辛颢龚元才闫伟博余绍棠李锐张伟
Owner NANJING UNIV OF POSTS & TELECOMM
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