30 results about "Cd element" patented technology

The invention discloses a method for preparing a CZTS thin film solar cell based on a full vacuum method. The method comprises the following steps: 1) after magnetron sputtering, vulcanizing to prepare a CZTS thin film absorbing layer; 2) preparing 50-100nm CdS thin film buffer layer on the absorbing layer through radio frequency magnetron sputtering and then preparing 50-100nm intrinsic ZnO and 400nm Al:ZnO through radio frequency magnetron sputtering; and 3) finally preparing 2mu m Ni / Al electrode through evaporating. The traditional water bath method for preparation of the CdS film has the main defect that since waste water containing Cd (a toxic element) is generated in the preparation process of the CdS thin film, cost is largely increased in the process of waste water treatment, and ammonium hydroxide used in the process of sedimentation has volatility and toxicity and is harmful to human health, and in addition the volatility of ammonium hydroxide can change the pH value of a solution and further influences the property of the buffer layer. The sputtering method does not cause the pollution of waste water containing the Cd element, which occurs after the implementation of the water bath method; therefore, the sputtering method is friendly to the environment and is suitable for online preparation of thin film cells; in addition, the whole preparation process is carried out in vacuum and therefore the possibility of external impurity contamination to the thin film is very small.

The invention relates to a method for comprehensively controlling cadmium pollution of rice by utilizing a modifier and an agricultural technology. The method comprises the steps of irrigating a rice field at the final booting phase of the rice, keeping a water layer of 2-3 cm on a field surface, broadcasting 60 Kg quicklime per mu into water uniformly, and keeping a waterflooding state of the field till the field is dried or drained by nature transpiration and evaporation 5 days before harvesting. With the adoption of the method, Cd elements in soil are gathered at inedible parts of the rice, such as a root, a stem and a leaf, so that the Cd accumulation amount at a grain part is reduced significantly; the Cd elements are effectively prevented and controlled from migrating to the rice; and the Cd content in the rice is reduced.

The invention discloses a preparation method of a battery cathode material precursor. The preparation method comprises the following steps: dissolving Ni-based nitrate, Co-based nitrate, Mn-based nitrate and Cd-based nitrate in absolute ethyl alcohol, so that mixed solution is obtained; performing solvothermal reaction on the mixed solution, so that Ni, Co, Mn and Cd elements are co-precipitated;and performing post treatment on the obtained precipitates, so that a Ni-Co-Mn-Cd-based battery cathode material precursor is obtained. The preparation method disclosed by the invention utilizes the characteristic that four elements, namely Ni, Co, Mn and Cd, are similar in Ksp, a solvothermal method is utilized for co-precipitating the four elements in a solvothermal synthesis process, so that the Ni-Co-Mn-Cd-based battery cathode material precursor is obtained, and then a Cd doped ternary battery cathode material is synthesized by virtue of a high temperature solid phase roasting method. Cdis taken as an inactive element with good conductivity, and a structure of the material can be stabilized and electronic conductivity of the material can be improved after the Cd is doped.

The invention discloses an Eu<3+> doped tellurate high density scintillating glass and a preparation method thereof. The high density scintillating glass comprises the following components: TeO2, ZnO,Lu2O3 and Eu2O3. The oxides are high density compounds, and the glass prepared by high temperature melting method has a density of greater than 6 g / cm<3>. Compared with high density glass containingPb, Cd and other heavy metal elements, the glass prepared by the method provided by the invention does not contain high-pollution heavy metals Pb and Cd elements, and is more environmentally friendly.High density Lu2O3 is taken as the glass raw material, the glass density is improved and the radiation resistance of the glass is enhanced. The high density scintillating glass prepared by the methodprovided by the invention has the advantages of simple preparation method, low production cost, high glass density, and strong scintillation light output.

The invention discloses a thermal evaporation method for preparation of a near-stoichiometric CdS film with a quantum dot as the precursor. The method includes: putting a cleaned substrate on a sample rack (Emitech, K950X) of a thermal evaporimeter vacuum chamber, putting 0.1-0.3g of the precursor with an appropriate size into a W basket and closing the chamber, under room temperature, conducting vacuum pumping on the chamber to 1.0*10<3>-1.0*10<5>mbar, adjusting the current passing through the W basket to control the evaporation rate, firstly slowly increasing the current from 0A to 6-10A to wait until the W basket turns red, then further increasing the current to 13-20A and keeping the state for 5-10s, and finally, reducing the current to 0A to complete the whole evaporation process. The method provided by the invention adopts a single-source thermal evaporation technique, avoids the problem of complex control of each evaporation source in multi-source thermal evaporation technique, and adopts CdS QDS rich in Cd element as the precursor. The preparation method is room temperature co-precipitation method, is easy to operate and has high yield.

The invention relates to a transparent oxyfluoride tellurite glass, which comprises the following components by mole ratio: 55-75mol% of TeO2, 5-25mol% of Al2O3, 0-18mol% of CaF2, 0-15mol% of LaF3. The oxyfluoride tellurite glass uses a traditional glass melting process for melting and molding. The oxyfluoride tellurite glass possesses excellent thermal stability, and is an ideal rare earth doped up-conversion luminescence matrix material which is capable of enhancing the permeability of the matrix, improving the treatment load of a land infiltration system and improving the denitrification efficiency, the oxyfluoride tellurite glass does not contain toxic heavy metals Pb and Cd elements which are harmful to human body and environment.

The invention provides a heatproof and anticorrosion rare earth magnesium alloy with high obdurability and a preparation method thereof, belonging to the technical field of light metal material. The rare earth magnesium alloy comprises the following components in proportion by weight: 3-5% of aluminum (Al), 0.1-0.4% of manganese (Mn), 0.8-2.5% of yttrium (Y), 0.3-1.0% of stibium (Sb), 0.3-1% of cadmium (Cd) and balance of magnesium (Mg). The invention has the advantages of solving the problem of reduction of mechanical properties caused by the splitting effect of a bulky Al2Y relative matrix in the alloy structure, improving the obdurability of the alloy and the mechanical properties of the alloy under room temperature and high temperature by making the most of the solution strengthening effect and refined crystalline strengthening effect of the Sb, Y and other elements and the dispersion strengthening effect of the high melting point YSb particle phase mass points, further improving the mechanical properties of the alloy by the grain refinement effect and the solution strengthening effect of the Cd element, and improving the anticorrosion performance of the alloy by improving theelectrode potential of the alloy matrix by the Cd element, so that the obdurability, heatproof performance and anticorrosion performance of the alloy are higher than that of the existing AE series magnesium alloy. The technological requirements for the preparation method provided by the invention are not harsh, and the preparation method can meet the industrialized enlarged production requirements and ensure thorough embodiment of the two technical effects.

The invention discloses a bearing and a preparation technology thereof, and belongs to the technical field of metal materials. The bearing comprises 0.05%-0.07% of Cd, 0.5%-1.5% of Mn, 0.4%-0.8% of C,0.08%-0.12% of Tl, 0.01%-0.05% of Cu, 0.03%-0.07% of Co and the balance Fe and impurities. The Cd element in raw materials can react with Cu in the materials to form hard copper alloy phases dispersed in steel, so that the tensile strength and abrasion resistance of alloy steel are improved obviously. Tl is very important for the alloy steel, not only the alloy strength can be improved, but alsothe alloy hardness and the corrosion resistance of the alloy can be improved, and the Tl is essential for the effect of prolonging the service life of a product. Meanwhile, with the method that the bearing body is combined with polymer layers outside the bearing body, the product has extremely high resistance in complex and variable environment.

The invention discloses a coprecipitation Cd / Al (Cadmium / Aluminum) catalyst which is prepared by the following steps of: under 80 DEG C, dripping mixed solution which is mixed by cadmium nitrate water solution and aluminum nitrate water solution in sodium carbonate water solution, dripping until the pH value is 3.5-4.5; then dripping the sodium carbonate water solution until the pH is 8.5-9.5, standing under 70-80 DEG C, filtering, washing, drying, heating up to 400-650 at the speed of 2 DEG C / min to calcine, and cooling to obtain the coprecipitation Cd / Al catalyst. The invention further discloses the application of the catalyst for catalyzing and synthesizing 2,6-naphthalenedicarboxylic acid. The Cd / Al catalyst disclosed by the invention is large in specific surface area, excellent in catalyzing effect and simple in preparation, wherein Al element and Cd element are both doped so as to improve the catalytic activity of the catalyst. The method for synthesizing the 2,6-naphthalenedicarboxylic acid by the coprecipitation Cd / Al catalyst can obtain the product by one step; and the product is high in purity, high in productive rate and simple in process route.

The invention discloses a synthetic method of cadmium selenide / zinc selenide / zinc sulfide (CdSe / ZnSe / ZnS) double shell quantum dot. The fluorescence of cadmium selenide / zinc selenide / zinc sulfide quantum dot has comparatively strong luminous intensity and stability, thereby preventing cd element from divulging and leading the materials to be more environmental-friendly and safer. The double shell quantum dot is synthesized in the two systems and the specific steps are that: cadmium selenide crystalline core is formed after fast injection of reaction solution in organic solvent and cadmium selenide crystalline core grows to obtain cadmium selenide quantum dot; after two steps of choosing solution and adding solution, shells of zinc selenide and zinc sulfide grow epitaxially outside the cadmium selenide appearance and the double shell quantum dot is obtained. For adopting chemical solvents that are comparatively very safe and easy to be obtained, the invention has the advantages of safety, easy operation, comparatively low cost and being beneficial for controlling cost and scale production. The obtained materials can be applied to fields such as light-emitting devices, biomolecule fluorescence marker, etc.

The invention relates to a quantum dot and a preparation method and application thereof; the quantum dot comprises an inner core and a shell layer covering the inner core, the material of the inner core is CdZnSe, and the material of the shell layer is CdZnS, wherein the Cd element in the shell layer and the The molar ratio of the S element is 0.15:1 to 0.4:1. The preparation method includes: preparing an inner core, mixing the inner core with a first zinc precursor, aliphatic amine, and a solvent to form a first precursor solution, and then adding the first cadmium precursor and the first sulfur precursor to the first precursor separately or together at a uniform speed. The precursor solution is used to form a second precursor solution, and the molar ratio of Cd element and S element in the second precursor solution is 0.15:1 to 0.4:1; the second precursor solution is reacted at the first temperature to The surface of the inner core is coated to form a shell, resulting in quantum dots. The energy level structure of the quantum dots better matches the hole and electron transport layers, and the carrier injection barrier is lower. 2 At the same working current, the EQE reaches the maximum value, and the optoelectronic device has a longer life and is more suitable for commercialization.

The invention belongs to the technical field of metal material preparation, and discloses a high-strength and corrosion-resistant aluminum alloy and its preparation method and application, including Mg 0.6-1.0%, Si 0.8-1.2%, Cu 0.1-0.3%, and Mn by weight percentage 0.4‑1.0%, Cr 0.15‑0.35%, Cd 0.05‑0.1%, and Fe≤0.5%. The present invention adds Cd, adopts three-stage homogenization heat treatment, and the Cd element is preferentially homogenized and diffused, and then the Mn and Cr elements take the Cd atomic cluster as the nucleation site, and precipitate to form a highly dispersed AlMnCr phase containing Cd elements, which can be used as a deformation regenerated phase. The nucleation particles of the crystallization realize the grain refinement of the second phase particle-induced recrystallization; the present invention optimizes the design of the aluminum alloy alloy composition based on the principle of alloying, that is, the mass ratio of Mg to Si is (0.65‑0.9):1 The mass ratio of Cu and Si is (0.15‑0.25): 1, and the Mg of highly dispersed distribution is obtained 2 Si strengthening phase and higher strength without forming a Cu-containing phase with poor corrosion resistance; through the present invention, an aluminum alloy with medium and high strength, high plasticity and high corrosion resistance can be obtained, which is suitable as an aluminum alloy for automotive structural parts or applied in its profile.

The invention discloses a method for increasing the phase inversion temperature of a Cu2Se base thermoelectric material. A Cd element is mixed into a Cu position of Cu2Se, and the method specifically comprises the following steps that 1, raw materials are weighed on the basis of a stoichiometric ratio of CdxCu2-xSe(0.004<=x<=0.012), and tableted after being mixed to be uniform; 2, column bodies obtained after tableting are subjected to vacuum sealing, then, self-propagating reaction is caused, and after the reaction is completed, natural cooling is performed; 3, reaction products obtained in the step 2 are ground to be fine powder, then, plasma activated sintering is performed, and a dense CdxCu2-xSe block is obtained. The method is simple, high in repeatability, capable of effectively increasing the phase inversion temperature of the Cu2Se base thermoelectric material, and suitable for being applied and popularized.

The invention relates to a high-performance double-phase magnesium-lithium alloy material and a preparation method thereof. The magnesium-lithium alloy material comprises the following components in percentage by mass: 6.0%-12% of a lithium element, 2%-6% of an Al element, 2%-6% of a Zn element, 0.5%-2% of a Cd element, 0.3%-1.5% of a Zr element and the balance of a magnesium element. According to the invention, the single-phase magnesium-lithium alloy material is relatively high in mechanical property, and the lowest tensile strength is 260MPa.