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Complete gradient alloy quantum dot and preparation method thereof

A gradient alloy and quantum dot technology, which is applied in chemical instruments and methods, nanotechnology for materials and surface science, luminescent materials, etc., can solve the problem of many defects at the interface, and achieve the reduction of lattice defects and stability Good, uniform particle size distribution

Pending Publication Date: 2022-05-17
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention proposes a fully gradient alloy quantum dot and its preparation method. Its purpose is to solve the problem that the core-shell quantum dot has an obvious interface between the core and the shell, and there are many defects at the interface due to lattice stress. The problem

Method used

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  • Complete gradient alloy quantum dot and preparation method thereof
  • Complete gradient alloy quantum dot and preparation method thereof
  • Complete gradient alloy quantum dot and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0085] Preparation of Cd 1-m Zn m Se (0

[0086] Mix 1.2mmol zinc oleate, 1.6mmol cadmium oleate and 18mL octadecene to obtain a zinc source-cadmium source mixture; mix 10mmol selenium powder, 10mL trioctylphosphine and 10mL octadecene to obtain a selenium source material liquid;

[0087] The zinc source-cadmium source mixed material solution was heated up at a rate of 10°C / min from room temperature (25°C) to 310°C, then the selenium source material solution was added, and the reaction was carried out at 310°C for 60 minutes; after the reaction was completed, the obtained material was Naturally cool down to room temperature to obtain the cooled material, mix the cooled material with chloroform and ethyl acetate for sedimentation, and then centrifuge to obtain a solid phase of Cd 1-m Zn m Se (0<m<1) quantum dots; when the material is mixed with chloroform and ethyl acetate after cooling, the volume ratio of the material, chl...

Embodiment 2

[0092] Preparation of Cd 1-m Zn m Se@8ZnSe y S 1-y (0

[0093] Mix 1.2mmol zinc oleate, 1.6mmol cadmium oleate and 18mL octadecene to obtain a zinc source-cadmium source mixture; mix 10mmol selenium powder, 10mL trioctylphosphine and 10mL octadecene to obtain a selenium source material 10mmol of sulfur powder, 10mL of trioctylphosphine and 10mL of octadecene were mixed to obtain a sulfur source mixture; 2mmol of zinc oleate and 5ml of octadecene were mixed to obtain a zinc source of liquid.

[0094] Get different volumes of selenium source material liquid and sulfur source material liquid and mix to obtain selenium source-sulfur source mixed material liquid; 2. Correspondingly recorded as selenium source-sulfur source mixed liquid Ⅰ, Ⅱ, Ⅲ, Ⅳ respectively.

[0095] The zinc source-cadmium source mixed material solution was heated at a rate of 10°C / min from room temperature (25°C) to 310°C, then the selenium source mat...

Embodiment 3

[0101] Preparation of Cd 1-m Zn m Se@10ZnSe y S 1-y (0

[0102] Preparation of Cd 1-m Zn m Se@10ZnSe y S 1-y (0

[0103] Mix 1.2mmol zinc oleate, 1.6mmol cadmium oleate and 18mL octadecene to obtain a zinc source-cadmium source mixture; mix 10mmol selenium powder, 10mL trioctylphosphine and 10mL octadecene to obtain a selenium source material 10mmol of sulfur powder, 10mL of trioctylphosphine and 10mL of octadecene were mixed to obtain a sulfur source mixture; 2mmol of zinc oleate and 5ml of octadecene were mixed to obtain a zinc source of liquid.

[0104] Raise the temperature of the zinc source-cadmium source mixed liquid at a rate of 10°C / min from room temperature (25°C) to 310°C, then add the selenium source liquid, and react at 310°C for 60 minutes; obtain Cd 1-m Zn m Se quantum dot solution.

[0105] Get different volumes of selenium source material ...

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Abstract

The invention provides a complete gradient alloy quantum dot. The structure of the complete gradient alloy quantum dot comprises a core quantum dot, the core quantum dots are Cd1-mZnmSe quantum dots, and m is more than or equal to 0 and less than or equal to 1; the Cd element content and the Zn element content of the Cd1-mZnmSe quantum dot are in gradient distribution from the center of a nuclear body to the surface of the nuclear body; the structure further comprises a shell layer; the shell layer is a ZnSeyS1-y shell, and y is more than or equal to 0 and less than or equal to 1; the Se element content and the S element content are in gradient distribution from the inner layer of the ZnSeyS1-y shell to the outer layer of the ZnSeyS1-y shell. The invention discloses a method for preparing complete gradient alloy quantum dots. The method comprises the following steps: 1, preparing a core material dispersion liquid; 2, preparing a shell layer material dispersion liquid; and 3, dropwise adding the shell layer material dispersion liquid into the core body material dispersion liquid, and growing a shell layer material on the surface of the core body quantum dot in situ to obtain the complete gradient alloy quantum dot.

Description

technical field [0001] The invention relates to a fully gradient alloy quantum dot and a preparation method thereof, belonging to the technical field of semiconductor functional materials. Background technique [0002] In recent years, quantum dots have achieved many innovative research results and industrialization progress in fields such as lighting, display, solar cells, biological detection, chemical catalysis, and quantum information; especially in the field of display, quantum dots have a narrow half-peak width, The advantages of adjustable emission wavelength, simple synthesis method, and high stability make it have the potential to become the main force of the next generation of display materials. [0003] Compared with the mature liquid crystal display and the current hot OLED, mini-LED, micro-LED, the quantum dot light-emitting diode (QLED) has its unique advantages and has attracted people's attention; at present, the quantum dots used to build high-performance QL...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88B82Y20/00B82Y40/00B82Y30/00
CPCC09K11/883B82Y20/00B82Y40/00B82Y30/00
Inventor 申怀彬高岩樊逢佳王阿强杜祖亮
Owner HENAN UNIVERSITY
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