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ZnO/SiC/Si heterojunction solar battery and preparation method thereof

A solar cell and heterojunction technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of large lattice mismatch and thermal mismatch, and it is difficult to epitaxially produce ZnO single crystal thin films, so as to improve the crystal quality. , improve the photoelectric conversion efficiency, the effect of low cost

Inactive Publication Date: 2010-04-14
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large lattice mismatch and thermal mismatch between ZnO and Si substrates, it is difficult to directly epitaxially produce high-quality ZnO single crystal thin films on Si substrates.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1. Preparation of ZnO / SiC / Si heterojunction solar cells provided by the present invention

[0035] 1) After cleaning the Si substrate, put it into the preset vacuum chamber of the MOCVD system, send the Si substrate in the preset vacuum chamber into the high-temperature reaction chamber through the sample delivery mechanism, remove the oxygen on the surface of the Si substrate, and then Using silane and propane as the reaction source and trimethylaluminum as the dopant source, the SiC layer was vapor-phase deposited at 1350° C. under a hydrogen atmosphere; wherein, the flow rates of silane and propane were 80 ml / min and 2 ml / min, respectively, The flow rate of hydrogen gas is 2 liters / min, and trimethylaluminum is fed after 15 minutes of deposition, the source temperature is 20°C, the flow rate is 2 ml / min, the pressure in the reaction chamber is 5000 Pa during the whole growth process, and the deposition time is 1 hour to obtain SiC layer with a thickness of 10...

Embodiment 2

[0038] Example 2, preparation of the ZnO / SiC / Si heterojunction solar cell provided by the present invention

[0039] 1) After cleaning the Si substrate, put it into the tube furnace of the CVD system, and then use silane and propane as the reaction source to vapor-deposit the SiC layer at 1350°C in a hydrogen atmosphere under normal pressure; among them, silane and propane The flow rates are 80 ml / min and 2 ml / min respectively, the flow rate of hydrogen is 2 liters / min, trimethylaluminum is fed after 15 minutes of deposition, the source temperature is 20° C., and the flow rate is 2 ml / min. A SiC layer with a thickness of 1000 nm was obtained after a total deposition time of 40 minutes.

[0040] 2) Stop passing silane and propane, lower the temperature to 500°C, then pass in water vapor and diethyl zinc with a molar ratio of 1:2, start to deposit ZnO film, and pass through a source temperature of 20°C after 10 minutes Trimethylaluminum was grown at a flow rate of 2 ml / min for ...

Embodiment 3

[0042] Example 3, preparation of the ZnO / SiC / Si heterojunction solar cell provided by the present invention

[0043] 1) After cleaning the Si substrate, put it into the preset vacuum chamber of the MOCVD system, send the Si substrate in the preset vacuum chamber into the high-temperature reaction chamber through the sample delivery mechanism, remove the oxygen on the surface of the Si substrate, and then Using silane and propane as the reaction source and trimethylaluminum as the dopant source, the SiC layer was vapor-phase deposited at 1100° C. under a hydrogen atmosphere; wherein, the flow rates of silane and propane were 50 ml / min and 2 ml / min, respectively, The flow rate of hydrogen gas is 2 liters / minute, and trimethylaluminum is introduced after 15 minutes of deposition, the source temperature is 20°C, the flow rate is 3 ml / minute, the pressure in the reaction chamber is 1000 Pa during the whole growth process, and after 60 minutes of deposition, the obtained SiC layer w...

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Abstract

The invention discloses a ZnO / SiC / Si heterojunction solar battery and a preparation method thereof, wherein the solar battery comprises a substrate layer, a SiC layer arranged on the substrate layer and a ZnO layer arranged on the SiC layer, wherein the material of the substrate layer in the ZnO / SiC / Si heterojunction solar battery is Si piece. The thickness of the substrate layer is 3-4mm, the thickness of the SiC layer is 500-3000nm, and the thickness of the ZnO layer is 300-2000nm. The preparation method comprises utilizing a chemical vapor deposition method to firstly prepare the SiC layer on the substrate, and then preparing the ZnO layer, and the method for preparing ZnO is a chemical vapor deposition method or a reactive sputtering method. The solar battery improves the crystallization quality of heterogeneous epitaxial films, obviously improves photoelectric transformation efficiency, can improve more than 1 time than a solar battery which is directly made of ZnO / Si, and has extremely wide application prospect.

Description

technical field [0001] The invention relates to a solar cell and a preparation method thereof, in particular to a ZnO / SiC / Si heterojunction solar cell and a preparation method thereof. Background technique [0002] The use of photovoltaic properties to prepare solar cells has broad application prospects and has formed an industry with considerable economic benefits. Currently used solar cells can be divided into four categories: silicon solar cells, multi-component compound thin-film solar cells, polymer multilayer modified electrode solar cells, and nanocrystalline solar cells. Median dominance. [0003] (1) Silicon solar cells [0004] Silicon solar cells are divided into three types: monocrystalline silicon solar cells, polycrystalline silicon thin film solar cells and amorphous silicon thin film solar cells. Monocrystalline silicon solar cells have the highest conversion efficiency and the most mature technology. The highest conversion efficiency was 23% in the labor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/06H01L31/0352H01L31/18C23C16/40C23C14/34C23C14/08C23C16/32H01L31/072H01L31/0745
CPCY02E10/50Y02P70/50
Inventor 傅竹西
Owner UNIV OF SCI & TECH OF CHINA
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