10results about How to "Reduce lattice defects" patented technology

The invention provides a phosphorus-carbon composite material with a core-shell structure as well as a preparation method and application of the phosphorus-carbon composite material. The phosphorus-carbon composite material with the core-shell structure comprises a pre-sodium-modified phosphorus-carbon core material and a shell coating the surface of the pre-sodium-modified phosphorus-carbon core material, and the material of the shell comprises amorphous carbon and organic sulfonate. By regulating and controlling the structure and composition of the phosphorus-carbon composite material, the specific capacity, the first coulombic efficiency and the fast charging performance of the hard carbon material are improved.

The invention discloses a perovskite thin film, a preparation method thereof, a photoelectric device and a preparation method thereof, the perovskite thin film comprises a perovskite structure substance and inorganic metal cyanate, and metal in the inorganic metal cyanate is selected from one or more of alkali metal, alkaline earth metal, transition metal and rare earth metal. The perovskite thin film is high in film forming quality, and the photoelectric device comprising the perovskite thin film is high in efficiency and stability.

The application relates to a gallium nitride epitaxial structure forming method and a semiconductor device. The method comprises the following steps: sequentially forming a buffer layer, an intrinsic GaN layer and an AlGaN layer on a substrate; growing a P-type doped GaN epitaxial layer on the AlGaN layer, controlling the doping concentration and thickness of the P-type GaN layer, performing N-type ion implantation on the P-type GaN layer, controlling the implantation depth in the range of 20nm-30nm, and then performing annealing. In another mode, the AlGaN layer is subjected to P-type ion implantation before the P-type GaN layer is grown to form an asymmetric P-type doped area, and then annealing is performed, and the implantation area is still P-type after annealing by controlling the implantation dose. In the semiconductor device, the contact layer is obtained by patterning the P-type GaN layer, and the P-type doped area with the highest doping concentration or the largest doping area is arranged at the position of the contact layer. The gate breakdown voltage can be improved, the threshold voltage can be stabilized, the low on-resistance can be maintained, and the CMOS process compatibility can be realized.

The invention relates to an O2-phase lithium cobalt oxide positive electrode material and a preparation method thereof, and belongs to the technical field of lithium ion batteries. The preparation method comprises the following steps: S1, uniformly mixing a doped metal source, a sodium source and a cobalt source, sintering, and cooling to obtain a P2-phase precursor; s2, uniformly mixing the P2-phase precursor, a lithium source A and the coating layer precursor, sintering, and cooling to obtain an intermediate A; s3, uniformly mixing the intermediate A and a lithium source B, sintering, and cooling to obtain an intermediate B; and S4, uniformly mixing the intermediate B and a lithium source C, sintering, cooling, washing and drying to obtain the O2-phase lithium cobalt oxide positive electrode material. The O2-phase lithium cobalt oxide positive electrode material with low residual sodium, high structural stability and excellent interface coating performance is prepared through a method of combining gradient ion exchange, gradient temperature control, gradient atmosphere regulation and control and synchronous in-situ coating.

The invention relates to a polyimide-based high-thermal-conductivity graphite film and a preparation method and application thereof.The preparation method comprises the following preparation steps that S1, a diamine monomer, a dianhydride monomer and calcium phosphate react in a polar solvent, and a polyamide acid solution is obtained; s2, the polyamide acid solution obtained in the step S1 is subjected to film casting and imidization treatment, and a polyimide film is prepared; and S3, carbonizing and graphitizing the polyimide film obtained in the step S2 to obtain the polyimide-based high-thermal-conductivity graphite film. Compared with the prior art, the method has the advantages that calcium phosphate promotes molecular orientation in a polyamide film plane, ordered arrangement and accumulation of a graphite microcrystalline structure are facilitated during carbonization and graphitization, the graphitization degree is improved, lattice defects are reduced, the heat conductivity coefficient of the prepared polyimide-based graphite film is high, and the heat-conducting property can reach 1800 W / m.K.

The application discloses a light-emitting thin film structure on a non-single crystal substrate, and belongs to the technical field of light-emitting semiconductor thin films and light-emitting devices.The structure comprises, from bottom to top, a non-single crystal substrate, a superlattice structure composed of n periodic alternately stacked two-dimensional material interface layers and III group nitride buffer layers, which are used for gradually reducing crystal defects and releasing stress, and an N type layer, a light-emitting layer, a P type layer and a P+ type layer which are stacked on the superlattice structure.By adopting the periodic combination of the two-dimensional material interface layers and the nitride buffer layers, a periodic superlattice structure of an "interface layer-buffer layer" is provided in the application, wherein the number of periods n is greater than or equal to 2.By optimizing material selection and stacking mode, the structure can significantly reduce the lattice defects of the outermost buffer layer, and when depositing the thin film used for the PN junction of a light-emitting diode, the lattice defects in the thin film can be greatly reduced, and the crystalline quality can be effectively improved.

This invention relates to the field of coatings, and discloses a high-color-ratio, corrosion-resistant yellow coating and its preparation method. The coating comprises the following components by weight: 50-60 parts by weight of waterborne epoxy-modified silicone resin, 25-35 parts by weight of modified bismuth vanadate, 1-2 parts by weight of nanocellulose, 0.3-0.8 parts by weight of dispersant, 0.2-0.5 parts by weight of defoamer, 0.2-0.5 parts by weight of leveling agent, and 2-3 parts by weight of corrosion-inhibiting pigment. The high-color-ratio, corrosion-resistant yellow coating formulation system of this invention is innovative, constructing a ternary synergistic system of waterborne epoxy-modified silicone resin-modified bismuth vanadate-nanocellulose, exhibiting excellent color and corrosion resistance. This coating utilizes microwave-induced flake-shaped bismuth vanadate, which has fewer lattice defects, achieves breakthrough color, and possesses high anti-corrosion performance.

The invention relates to a method for preparing a battery material with assistance of gel. The method comprises the following steps: synthesizing PCLA-PEG-PCLA; pCLA-PEG-PCLA is dissolved in deionized water, sodium ferrocyanide is added, and stirring continues to form a first solution; dissolving PCLA-PEG-PCLA in deionized water, stirring at normal temperature, then adding ferrous sulfate, and continuously stirring to form a second solution; under the protective atmosphere environment, the first solution is dropwise added into the second solution through a peristaltic pump, after full reaction is completed, centrifugation, water washing, alcohol washing and drying are sequentially conducted, and then the battery material is obtained, the chemical formula is NaxFe [Fe (CN) 6] y.zH2O, 0 < x < = 2, 0 < y < = 1, and 0 < z < = 3; the battery material prepared by using the method can reduce lattice defects and crystal water, improve the sodium ion content, and can improve the rate capability and cycle performance of the battery when being applied to the sodium ion battery.

This invention relates to a PM-FeAlO3 catalyst, its preparation method, and its application. The method includes the following steps: S1, using a gel casting process, an iron source, an aluminum source, and a gel system are mixed to form a slurry. This slurry is then cast, cured, dried, and calcined to obtain a FeAlO3 catalyst matrix; S2, the FeAlO3 catalyst matrix is ​​modified by plasma ball milling. The catalyst surface is activated by the synergistic effect of mechanical ball milling and plasma, resulting in the PM-FeAlO3 catalyst. This invention combines gel casting with plasma ball milling modification, which optimizes the catalyst component distribution, increases surface defect sites and active sites, effectively improves the methane cracking conversion rate, and slows down catalytic performance degradation. When used in methane cracking reactions, this catalyst produces hydrogen while also yielding carbon nanotubes with regular morphology and few lattice defects, significantly enhancing the overall application value of the process.

The invention discloses nickel-coated graphite composite powder and a preparation method thereof, and relates to the technical field of composite materials. The preparation method comprises the following steps: taking a carbon raw material as a starting point, mixing a nitrogen source, a phosphorus source and a sulfur source, performing high-temperature treatment to obtain modified artificial graphite powder, adding the modified artificial graphite powder into a plating solution mixed with nickel salt, a reducing agent, a complexing agent and a stabilizing agent, and optimizing process parameters. The nickel-coated graphite composite powder which is complete in coating, excellent in anti-aging performance and electromagnetic shielding performance and simple and efficient in preparation process is prepared. The nickel-coated graphite composite powder can be widely applied to multiple fields of electromagnetic shielding materials, conductive fillers and the like.