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High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof

A technology of silicon nitride ceramics and high thermal conductivity, which is applied in the field of ceramic substrate materials, can solve problems such as lattice defects, thermal conductivity reduction, phonon scattering, etc., to reduce lattice oxygen content and lattice defects, easy to operate, The effect of high thermal conductivity

Active Publication Date: 2021-01-01
江苏贝色新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Once the oxygen impurities of silicon nitride are solid-dissolved into the crystal grains and become lattice oxygen, it will cause lattice defects, and the lattice defects will cause phonon scattering, resulting in a decrease in thermal conductivity.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The preparation method of the high thermal conductivity silicon nitride ceramic substrate is as follows:

[0029] In the first step, weigh 80.0g of silicon nitride powder, 2.5g of lanthanum oxide powder and 1.5g of magnesium oxide powder as sintering aids and put them into the ball mill bucket, then add 1.2g of triethyl phosphate, and then add 65.0g of absolute ethanol and the mixed solution of butanone (wherein the mass ratio of absolute ethanol and butanone is 1:1), carry out ball milling for the first time, and the ball milling time is 24 hours;

[0030] In the second step, after the first ball milling, open the ball mill barrel, add 4.8g polyvinyl butyral and 3.0g polyethylene glycol, and carry out the second ball milling, and the ball milling time is 24 hours;

[0031] In the third step, after the second ball milling, the slurry is poured into a container and placed in a vacuum defoaming machine for defoaming treatment;

[0032] The fourth step is to pour the defo...

Embodiment 2

[0037] The preparation method of the high thermal conductivity silicon nitride ceramic substrate is as follows:

[0038] In the first step, weigh 80.0g of silicon nitride powder, 2.5g of lanthanum oxide powder and 1.5g of magnesium oxide powder as a sintering aid and put them into the ball mill barrel, then weigh 0.8g of carbon black as a carbon reducing agent and put them into the ball mill barrel , add 1.2g triethyl phosphate dispersant again, then add the mixed solution of 65.0g dehydrated alcohol and butanone (wherein the mass ratio of dehydrated alcohol and butanone is 1:1), carry out ball milling for the first time, ball milling time for 24 hours;

[0039] In the second step, after the first ball milling, open the ball mill barrel, add 4.8g polyvinyl butyral and 3.0g polyethylene glycol, and carry out the second ball milling, and the ball milling time is 24 hours;

[0040] The third step, after the second ball milling, pour the slurry into the container and place it in ...

Embodiment 3

[0047] The preparation method of the high thermal conductivity silicon nitride ceramic substrate is as follows:

[0048]In the first step, weigh 80.0g of silicon nitride powder, 2.5g of lanthanum oxide powder and 1.5g of magnesium oxide powder as a sintering aid and put them into the ball mill barrel, then weigh 0.8g of carbon black as a carbon reducing agent and put them into the ball mill barrel , add 1.2g triethyl phosphate again, then add the mixed solution of 65.0g absolute ethanol and butanone (wherein the mass ratio of absolute ethanol and butanone is 1:1), carry out ball milling for the first time, ball milling time is 24 Hour;

[0049] In the second step, after the first ball milling, open the ball mill barrel, add 4.8g polyvinyl butyral and 3.0g polyethylene glycol, and carry out the second ball milling, and the ball milling time is 24 hours;

[0050] The third step, after the second ball milling, pour the slurry into the container and place it in a vacuum defoaming...

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Abstract

The invention discloses a high-thermal-conductivity silicon nitride ceramic substrate and a preparation method thereof, and belongs to the technical field of ceramic substrate materials. The method comprises the following steps: carrying out primary ball milling and mixing on silicon nitride powder, a sintering aid, carbon black, triethyl phosphate and a solvent; adding a binder and a plasticizer,and carrying out secondary ball milling to obtain a slurry; carrying out vacuum defoaming treatment, and then carrying out tape casting to obtain a flaky biscuit; and performing high-temperature sintering after vacuum glue discharging to obtain the silicon nitride ceramic substrate. According to the invention, the carbon black is introduced based on the raw material ratio, and the sintering is carried out by two-step heating, so that the carbon black and the oxygen impurities of the silicon nitride are fully subjected to chemical reaction at a proper temperature and under a proper atmospherecondition, the lattice oxygen content of the silicon nitride ceramic is effectively reduced, and the thermal conductivity of the silicon nitride ceramic is improved. The silicon nitride ceramic substrate prepared by the invention has good performances of high thermal conductivity and high bending strength.

Description

technical field [0001] The invention belongs to the technical field of ceramic substrate materials, and in particular relates to a silicon nitride ceramic substrate with high thermal conductivity and a preparation method thereof. Background technique [0002] Power electronic devices are more and more widely used in power storage, power transmission, electric vehicles, electric locomotives and many other industrial fields. With the continuous increase in power and high integration of power electronic devices, chips will generate a lot of heat during operation. If the heat cannot be dissipated in a timely and effective manner, the performance of the power electronic device will be affected, and in severe cases, the power electronic device itself will be damaged. This requires that the ceramic substrate packaging material responsible for insulation and heat dissipation must have excellent mechanical properties and thermal conductivity. [0003] At present, there are three ma...

Claims

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Application Information

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IPC IPC(8): C04B35/584C04B35/622C04B35/645
CPCC04B35/5935C04B35/622C04B35/645C04B2235/3206C04B2235/3227C04B2235/424C04B2235/449C04B2235/6586C04B2235/661C04B2235/96C04B2235/9607
Inventor 陈颖豪
Owner 江苏贝色新材料有限公司
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