Method for preparing high-thermal-conductivity silicon nitride ceramic
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 江西中科上宇科技有限公司
- Publication Date
- 2019-06-07
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Abstract
Description
technical field
[0001] The invention relates to a preparation method of a silicon nitride ceramic material with high thermal conductivity, belonging to the field of inorganic non-metallic materials. Background technique
[0002] With the development of semiconductor devices in the direction of integration, miniaturization, and high power, device heat dissipation has become one of its important technical bottlenecks. Solving the heat dissipation problem largely depends on the performance of the ceramic substrate in the device. Currently commonly used ceramic heat dissipation substrates are alumina (Al 2 o 3 ), aluminum nitride (AlN), silicon carbide (SiC), beryllium oxide (BeO), etc. where Al 2 o 3 The thermal conductivity of ceramics is the lowest, and its expansion coefficient is greatly different from that of silicon components; AlN and BeO have the best thermal conductivity, but BeO powder is highly toxic; AlN has poor mechanical properties; SiC ceramics have low ins...