Silicon nitride ceramic material and preparation method thereof

A technology of silicon nitride ceramics and ceramic materials, which is applied in the field of high-performance ceramic materials, can solve the problems of low thermal conductivity of silicon nitride ceramics, high preparation price, and does not consider the research of high thermal conductivity ceramic materials, so as to improve thermal conductivity and mechanical properties, the effect of improving thermal conductivity

Inactive Publication Date: 2020-01-31
常德科锐新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because it has been generally believed that the thermal conductivity of silicon nitride ceramics is low, only 30W·m -1 ·K -1
This is similar to the thermal conductivity value of alumina ceramics, but far lower than that of aluminum nitride ceramics, and because of its high preparation cost, it has not been considered as a high thermal conductivity ceramic material for research

Method used

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  • Silicon nitride ceramic material and preparation method thereof
  • Silicon nitride ceramic material and preparation method thereof
  • Silicon nitride ceramic material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Weigh silicon nitride powder, magnesium fluoride, Yb 2 o 3 , wherein, based on the total weight of solid matter, the silicon nitride powder is Si with an average particle size of 0.8 μm 3 N 4 Micropowder (a-Si 3 N 4 Content is 95% of the total weight), Yb 2 o 3 The average particle size is 0.5μm, and its purity is 99.9%; MgF 2 The average particle size is 0.5 μm, and its purity is 99.99%. Using silicon nitride grinding balls as the grinding medium and anhydrous ethanol as the mixing medium, the mixture was stirred in a stirring mill for 12 hours, and the ball-milled slurry was placed in a rotary evaporator and dried under vacuum at a temperature of 70°C. The dried powder is ground in an agate mortar and passed through an 80-mesh sieve to obtain a powder for sintering.

[0028] Put the sieved powder into a graphite mold, prefabricate the mechanical pressure of 5MPa for preforming, and then vacuumize to keep the vacuum within 16Pa, and then heat it at 1800°C and 2...

Embodiment 2

[0031] The only difference from Example 1 is that the rare earth metal oxide in this example is Er 2 o 3 , others are the same as in Example 1, and will not be repeated here.

Embodiment 3

[0033] The only difference from Example 1 is that the rare earth metal oxide in this example is Sm 2 o 3 , others are the same as in Example 1, and will not be repeated here.

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Abstract

The invention relates to a silicon nitride ceramic material, and belongs to the technical field of high-performance ceramic materials, wherein the ceramic material comprises 91-95 wt% of silicon nitride powder, 2-4 wt% of magnesium fluoride and 3-5 wt% of a rare earth metal compound, and the content of the magnesium fluoride is not greater than the content of the rare earth metal compound. According to the invention, a proper amount of the MgF2 and the rare earth metal compound are selected as the sintering aids, and the high-temperature hot-pressing sintering is adopted, so that the lattice oxygen content of the silicon nitride ceramic material is reduced so as to improve the thermal conductivity and the mechanical property of the silicon nitride ceramic; and the silicon nitride ceramic material has the thermal conductivity of more than 88 W / m.k, the bending strength of 980-1100 MPa, the fracture toughness of 7-9 MPa.m<1 / 2>, the dielectric coefficient of smaller than 10, and the dielectric loss of the order of magnitude of 10<-3>.

Description

technical field [0001] The invention relates to a silicon nitride ceramic material, in particular to a silicon nitride ceramic material with high thermal conductivity and excellent mechanical properties and a preparation method thereof, belonging to the technical field of high-performance ceramic materials. Background technique [0002] With the rapid development of microelectronic information technology, modern electronic devices are developing towards high voltage, high frequency, high density, and intensification. The heat dissipation problem of circuit substrates has become particularly prominent and has become a bottleneck restricting its development. At present, in order to cope with the increasingly serious energy and environmental problems, the world is in the transition stage from relying on fossil energy to electric energy. Various means of transportation that use electricity emerge in an endless stream, such as high-speed electric trains, electric vehicles, fuel c...

Claims

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Application Information

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IPC IPC(8): C04B35/584C04B35/645
CPCC04B35/5935C04B2235/445C04B2235/3224C04B2235/9607C04B2235/96
Inventor 肖毅
Owner 常德科锐新材料科技有限公司
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