Cation-anion co-doping n-type zinc-oxide-base transparent conducting film and preparation method thereof

A transparent conductive film, anion and cation technology, applied in the direction of ion implantation plating, metal material coating process, vacuum evaporation plating, etc., can solve the problems of performance degradation, poor stability, unsatisfactory application, etc., to promote crystallization , Reduce lattice defects, low cost effect

Active Publication Date: 2010-03-03
山东中科泰阳光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Zinc oxide-based films such as BZO and AZO have poor stability in high-temperature and humid environments, so their performance has declined, which cannot meet the applications in solar cells and other optoelectronic fields.

Method used

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  • Cation-anion co-doping n-type zinc-oxide-base transparent conducting film and preparation method thereof
  • Cation-anion co-doping n-type zinc-oxide-base transparent conducting film and preparation method thereof
  • Cation-anion co-doping n-type zinc-oxide-base transparent conducting film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Using ZnO-based doping compound (ZnO:Al, F) as the target material, the doping ratios of Al and F are 2.0mol% and 1.0mol%, respectively, and ordinary glass is used as the substrate, and the background vacuum is pumped to 2.0×10 -4 Pa, with high-purity argon as the working gas, the working pressure was maintained at 1.0Pa, the substrate temperature was 150°C, the distance between the target and the substrate was set at 7.5cm, DC magnetron sputtering was used, and the sputtering power was 80W. The time is 40 minutes. The visible light transmittance of the film is above 90%, and the resistivity is 3.2×10 -4 Ω·cm, the retention rate of electrical conductivity and light transmittance is above 98% after accelerated aging for 50 hours in an environment with a temperature of 60 degrees Celsius and a relative humidity of 70%. The XRD pattern, SEM pattern, and transmission spectrum of the ZnO-based doped film are shown in Figure 1 to Figure 4, it was found that the obtained fi...

Embodiment 2

[0031] Using ZnO-based doping compound (ZnO:Al, F) as the target material, the doping ratios of Al and F are 5.0mol% and 2.0mol%, respectively, and ordinary glass is used as the substrate, and the background vacuum is pumped to 2.0×10 -4 Pa, using high-purity argon as the working gas, the working pressure is maintained at 1.0Pa, the substrate temperature is 150°C, the distance between the target and the substrate is set at 6.5cm, DC magnetron sputtering is used, and the sputtering power is 80W. The time is 40 minutes. The visible light transmittance of the film is above 86%, and the resistivity is 7.2×10 -4 Ω·cm, the retention rate of electrical conductivity and light transmittance is above 99% after accelerated aging for 50 hours in an environment with a temperature of 60 degrees Celsius and a relative humidity of 70%.

Embodiment 3

[0033] Using ZnO-based doping compound (ZnO:Al, F) as the target material, the doping ratio of Al and F is 0.25mol% and 5mol%, and using ordinary glass as the substrate, the background vacuum is pumped to 2.0×10 -4 Pa, with high-purity argon as the working gas, the working pressure is maintained at 1.2Pa, the substrate temperature is 150°C, the distance between the target and the substrate is set at 7cm, DC magnetron sputtering is used, the sputtering power is 120W, the deposition time After 40 min, the crystal grains grew obviously, and the crystalline quality of the film was significantly improved. The thickness of the film is about 1500nm, the transmittance of visible light is above 85%, and the resistivity is 9.2×10 -4 Ω·cm, the retention rate of electrical conductivity and light transmittance is above 90% after accelerated aging for 50 hours in an environment with a temperature of 60 degrees Celsius and a relative humidity of 70%.

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Abstract

The invention provides a cation-anion co-doping n-type zinc-oxide-base transparent conducting film. The doped cation is a high-valency cation M<n+>, and n is 3, 4, 5 or 6; and the doped anion is a low-valency anion X<m->, and m is equal to 1. The preparation method adopts the High-vacuum Magnetron Sputtering technique and promotes the n-type transparent conductivity of the zinc-oxide film by utilizing high-valency cations and low-valency anions to prepare the high-performance cation-anion co-doping zinc-oxide polycrystal film. A compound containing low-valency anions can be used as a fluxing agent to promote the crystallization of the zinc-oxide-base polycrystal film and enhance the visible light transparency of the film and the electron conductivity. The high-performance zinc-oxide-base transparent conducting film has the advantages of simple preparation process, superior visible light transparency and conductivity, and low cost, and has wide application prospects in the fields of solar cells and photoconducting devices.

Description

technical field [0001] The invention relates to a high-performance n-type zinc oxide-based transparent conductive film co-doped with anions and cations and a preparation method thereof, belonging to the technical field of transparent conductive material (TCO) films. Background technique [0002] Since the first translucent conductor CdO [K.Badeker, Ann.Phys.Leipzig, 1907, 22, 749] came out in 1907, transparent conductors have been widely used due to the needs of military and industrial applications. Transparent conductors combine high transparency and high electrical conductivity, which are usually incompatible, in the same material. Most of the discovered transparent conductors are transparent conductive oxides (TCOs), which mainly belong to n-type electronic conduction. The transparent conductive oxide film is mainly coated with a layer of transparent conductive oxide film on the surface of flat glass by physical or chemical coating method, mainly including In, Sn, Zn and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35
Inventor 黄富强万冬云
Owner 山东中科泰阳光电科技有限公司
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