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173results about How to "Improved yield" patented technology

Method for laser cleaning of a substrate surface using a solid sacrificial film

An improved semiconductor wafer processing apparatus 10 includes a series of processing stations combined in one form, coupled together by computer-controlled cluster tooling. Wafers are supplied in a pod to an input station 28 which initiates a data record for recording processing results at each station. A sacrificial film 140 is applied to the surface 135 of each wafer. Individual wafers are transferred to a computer-controlled defect-mapping station 14 where particulate defects 130 are identified and their position coordinates recorded. Defect-mapped wafers are transferred to a computer-controlled laser area cleaning station 11 which lifts the defects and sweeps the wafer surface clean, except for stubborn defects. Clean wafers are transferred to a final mapping station 20 or 22, followed by transfer of the wafers to an output station 30. Wafers having remaining stubborn defects are transferred to a second defect-mapping station 16 where stubborn defects are located by coordinates, after which the wafers are transferred to a defect review tool incorporating a scanning electron microscope (SEM-DRT) 24. A SEM image review of stubborn defects includes chemical analysis of the stubborn defects. A laser point-cleaning station 13 lifts and sweeps each stubborn defect individually from the wafer surface. Cleaned wafers are transferred to a third defect-mapping station 18 for recording any stubborn defects remaining, then to a second laser area cleaning station 12 for a final cleaning, followed by transfer of the wafers to a final mapping station 20 or 22 for mapping of any remaining stubborn defects. The accompanying data records are updated followed by transfer of the wafers to an output station 30.
Owner:SEIKO INSTR INC

Nucleotide sequences for transcriptional regulation in corynebacterium glutamicum

InactiveUS7141388B2Enhance productionImproved yieldSugar derivativesBacteriaBacterial genesTranscriptional regulation
The invention relates to isolated polynucleotides from Corynebacterium glutamicum which are useful in the regulation of gene expression. In particular, the invention relates to isolated polynucleotides comprising C.glutamicum promoters which may be used to regulate, i.e., either increase or decrease, gene expression. In certain embodiments, isolated promoter sequences of the present invention regulate gene expression through the use of exogenous or endogenous induction. The invention further provides recombinant vectors and recombinant cells comprising isolated polynucleotides of the present invention, preferably in operable association with heterologous genes. Also provided are methods of regulating bacterial gene expression comprising growth of a recombinant cell of the present invention. In particular, the present invention provides methods to regulate genes involved in amino acid production comprising growth of a recombinant cell of the present invention. In certain embodiments, the present invention provides methods of regulating gene expression in bacteria, particularly Corynebacterium species, especially of the genus Corynebacterium, comprising fermentation growth of a recombinant cell of the present invention, where metabolite concentrations, temperature, or oxygen levels are manipulated to regulate gene expression.
Owner:ARCHER DANIELS MIDLAND CO

Wafer cleaning method and wafer bonding method using the same

The present invention relates to a wafer cleaning and a wafer bonding method using the same that can improve a yield of cleaning process and bonding property in bonding the cleaned wafer by cleaning the wafer using atmospheric pressure plasma and cleaning solution. The wafer cleaning method includes the steps of providing a process chamber with a wafer whose bonding surface faces upward, cleaning and surface-treating the bonding surface of the wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the wafer, and withdrawing out the wafer from the process chamber. The wafer bonding method includes the steps of: providing a first process chamber with a first wafer whose bonding surface faces upward; cleaning and surface-treating the bonding surface of the first wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the first wafer; withdrawing out the first wafer from the first process chamber and providing a second process chamber with the first wafer; providing a third process chamber with a second wafer whose bonding surface faces upward; cleaning and surface-treating the bonding surface of the second wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the second wafer; withdrawing out the second wafer from the third process chamber and providing the second process chamber with the second wafer whose bonding surface faces to the bonding surface of the first wafeη and bonding the bonding surfaces of the first and second wafers to each other.
Owner:LTRIN
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