Method for manufacturing semiconductor substrate, semiconductor device and electronic device

Abstract

A semiconductor substrate including a single crystal semiconductor layer with a buffer layer interposed therebetween is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged layer containing a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the semiconductor substrate is heated so that the single crystal semiconductor substrate is separated along a separation plane. The single crystal semiconductor layer is irradiated with a laser beam from the single crystal semiconductor layer side to melt a region in the depth direction from the surface of the laser-irradiated region of the single crystal semiconductor layer. Recrystallization progresses based on the plane orientation of the single crystal semiconductor layer which is solid without being melted; therefore, crystallinity of the single crystal semiconductor layer is recovered and the surface of the single crystal semiconductor layer is planarized.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor substrate on which a single crystal semiconductor layer is fixed via a buffer layer, a semiconductor device manufactured by the method, and electronic equipment including the semiconductor device. Background technique [0002] In recent years, research and development of integrated circuits using SOI (Silicon On Insulator, silicon on insulator) substrates instead of bulk silicon wafers has been carried out. By utilizing the characteristics of a thin single crystal silicon layer formed on an insulating layer, it is possible to form semiconductor layers of transistors in an integrated circuit completely separated from each other and make the transistors fully depleted. Therefore, a semiconductor integrated circuit with high added value such as high integration, high-speed drive, and low power consumption can be realized. [0003] As the SOI substrate, a SIMOX substrate and a bond...

AI Technical Summary

Problems solved by technology

Therefore, when the unevenness of the surface of the semiconductor layer is large, the performance of the semiconductor element is reduced such as a decrease in electric field effect mobility, an increase in the magnitude of the threshold voltage value, etc.

[0016] As described above, when a substrate such as a glass substrate that is low in heat resistance and easily bendable is used as a supporting substrate, there arises a problem of improving the stability of the semiconductor layer that is separated from the silicon wafer and fixed to the supporting substrate. The unevenness of the surface is very difficult

Images