The application discloses a large-size CdZnTe
substrate surface processing method, comprising the following steps: obtaining a
cut CdZnTe
wafer,
polishing a first surface of the CdZnTe
wafer until the
cutting fluctuation on the first surface is removed to obtain a first
wafer;
thinning a second surface of the CdZnTe wafer, and then mechanically
polishing the second surface to obtain a second wafer; taking the second wafer off the
thinning carrier, performing X-
ray diffraction appearance testing, obtaining an X-
ray diffraction appearance graph corresponding to the second wafer, selecting a region with uniform contrast on the X-
ray diffraction appearance graph, and marking the corresponding position of the second wafer; according to the marking of the corresponding position of the second wafer, the second wafer is
cut into a regular-shaped CdZnTe substrate; the CdZnTe substrate is placed on a
polishing carrier for substrate polishing
processing, the polished CdZnTe substrate is protected by gluing, and after being taken off the polishing carrier, the CdZnTe substrate is cleaned to obtain a processed CdZnTe substrate.