297 results about "Ag alloy" patented technology

The invention discloses a semiconductor device structure, a preparation method thereof and a corresponding chip, and belongs to the technical field of semiconductor devices. The semiconductor device structure comprises a gold-silver alloy bump and a UBM layer, the UBM layer is composed of a seed layer and an adhesion layer, the bottom of the gold-silver alloy bump is connected with the seed layer, the adhesion layer is connected with a chip electrode, and the thermal expansion coefficient difference value of the gold-silver alloy bump and the adhesion layer is below 9ppm / K. According to the technical scheme provided by the invention, the technical problem that the gold-silver alloy bump and the existing UBM layer cannot pass a high-low temperature cycle reliability test is solved, the obtained semiconductor device structure and the corresponding chip can pass various reliability tests, the implementation feasibility is realized by replacing the pure gold bump with the gold-silver alloy, and the reliability of the gold-silver alloy bump is improved. Therefore, the production cost of the flip chip is greatly reduced.

The invention discloses a semiconductor device structure, a preparation method thereof and a chip, and belongs to the technical field of semiconductor devices. The semiconductor device structure comprises a gold-silver alloy bump and a UBM layer, and the UBM layer is composed of a seed layer, a diffusion barrier layer and an adhesion layer or composed of the diffusion barrier layer and the adhesion layer. The diffusion barrier layer is composed of a platinum group element simple substance and / or an alloy containing a platinum group element, preferably composed of platinum, rhodium, iridium or an alloy thereof; the bottom of the gold-silver alloy bump is connected with the seed layer or the diffusion barrier layer, and the adhesion layer is connected with a chip electrode. By improving the UBM layer, the combination reliability of the gold-silver alloy bump and the UBM layer is improved, the obtained semiconductor device structure can pass a high-end chip reliability test, and a flip chip is prepared by replacing gold with gold-silver alloy.

The embodiment of the invention provides a gold-silver alloy bump structure, a preparation method and a semiconductor device, and the preparation method comprises the steps: providing a semiconductor device, and forming a seed layer on the surface of the semiconductor device; a first gold-silver alloy bump is formed on the seed layer through an electroplating technology, the gold content in the formed first gold-silver alloy bump is larger than 45%, and the thickness of the first gold-silver alloy bump ranges from 0.2 micrometer to 5 micrometers; and electroplating the first gold-silver alloy bump by using the same electroplating liquid to form a second gold-silver alloy bump, wherein the gold content in the formed second gold-silver alloy bump is less than 30%, and the thickness range of the second gold-silver alloy bump is 3-20 [mu] m. The first gold-silver alloy bump with high gold content improves the binding force between the bottom of the gold-silver alloy bump structure and the seed layer of the semiconductor device, and improves the reliability of the semiconductor device. The second gold-silver alloy bump with low gold content can avoid pure gold bumps on the surface of the gold-silver alloy bump structure, the hardness and morphology of the gold-silver alloy bump structure are controlled, and subsequent packaging is ensured.

The invention provides electroplating liquid, an electroplating method, an alloy bump and a preparation method of the alloy bump. The electroplating solution comprises the following components with mass concentration: 5-20 g / L of water-soluble cyanogen-containing gold salt, 1-15 g / L of water-soluble silver-containing salt, 0.5-5 g / L of cobalt citrate, 1-10 g / L of a refiner, 20-100 g / L of conductive salt, 10-90 g / L of a compound complexing agent and the balance of deionized water. The refining agent is selected from one or more of sodium lignin sulfonate, 5-nitroguaiacol sodium salt, sodium carboxymethyl cellulose and sodium alginate. Cobalt citrate and a specific substance are selected as refiners, so that the prepared gold-silver alloy bump is high in hardness and low in surface roughness; and through matching of the complexing agent, the antioxidant and the stabilizer, the oxidation resistance and the stability of the electroplating liquid are greatly improved, and the service life is prolonged.

The invention discloses an asynchronous rolling process method of a high-strength and high-toughness Al-Cu-Mg-Ag alloy plate, which comprises the following steps: carrying out multi-pass asynchronous hot rolling on an Al-Cu-Mg-Ag alloy ingot to obtain a hot-rolled plate, carrying out annealing treatment on the hot-rolled plate to obtain an annealed part, and carrying out multi-pass asynchronous cold rolling on the annealed part to obtain a cold-rolled plate, and finally, the cold-rolled plate is sequentially subjected to solution treatment and aging treatment, and the high-strength and high-toughness Al-Cu-Mg-Ag alloy plate is obtained. According to the method, the initial cast ingot is directly subjected to asynchronous rolling forming, the morphology of a primary phase is remarkably improved, the content of Cu atoms in an aluminum solid solution is increased, the microstructure is regulated and controlled through plastic deformation and heat treatment process adjustment, and then the strength of the alloy plate is remarkably improved.

The present invention relates to the technical field of metal composite material processing and preparation, and provides a Cu-Ag alloy wire reinforced with endogenous Ag fiber and a preparation method thereof. The silver content in the copper-silver alloy is 4-8%, the oxygen content is below 3ppm, and the total content of copper and silver is above 99.995%. The preparation method comprises: preparing a copper-silver alloy rod by continuous casting under vacuum; preparing an initial copper-silver alloy wire by solid solution, aging, and drawing of the copper-silver alloy rod; recovery annealing of the initial copper-silver alloy wire; softening annealing of the initial copper-silver alloy wire, micro-wire drawing, and recovery annealing of the micro-wire. The diameter of the obtained copper-silver alloy wire is 0.1-0.3mm, and the diameter of the copper-silver alloy micro-wire is 0.02-0.05mm, and its tensile strength is not less than 1GPa, and its conductivity is not less than 80%IACS. The copper-silver alloy wire prepared by the present invention avoids problems such as uneven organization while reducing the silver content, and significantly improves its electrical conductivity and mechanical properties.

The invention belongs to the technical field of electro-catalysis, and particularly relates to a one-pot preparation method of a high-alloying gold-silver alloy aerogel material and application of the high-alloying gold-silver alloy aerogel material in electro-catalytic reduction of CO2. According to the preparation method, chloroauric acid and silver nitrate are selected as precursors for synthesizing the AuAg alloy aerogel, the AuAg alloy aerogel is prepared through a simple one-pot preparation method, and complex processes such as ultrafiltration centrifugal purification and concentration and heat treatment are not needed. Compared with an existing two-step method, the preparation process is complex, time and labor are consumed, and heat treatment is needed. However, according to the one-pot preparation method used in the invention, the high-alloying AuAg alloy aerogel can be obtained only by simply feeding, stirring and standing at room temperature. Moreover, the alloying degree of the obtained AuAg aerogel is higher, higher CO selectivity is shown in CO2RR application, and compared with AuAg alloy aerogel obtained through an existing two-step method, the CO Faraday efficiency of the AuAg aerogel is improved by about 37.1%.

Provided are: a method for manufacturing a Cu-Ag alloy wire material, the method being characterized by including the following steps in the stated order; and a Cu-Ag alloy wire material manufactured by the method. Step 1: a metal rod is obtained by melting metal raw materials that have been blended so that, excluding inevitable impurities, the composition is 10.0 wt% to 30.0 wt% Ag and the remainder Cu. Step 2 to step 4: cold drawing and heat treatment are repeated three times while gradually increasing the rate of cross-sectional reduction between before and after processing. Step 5 to step 7: the cold drawing and the heat treatment are repeated three times so that the rate of cross-sectional reduction between before and after processing becomes larger than that in step 2 to step 4. Step 8: a Cu-Ag alloy wire material having a diameter of 0.1 mm or less is obtained by subjecting the metal rod to cold drawing such that the rate of cross-sectional reduction is 99.0% to 99.9999%.

The invention discloses a preparation method of a Ni3Sn superconducting wire based on 3D printing. The preparation method comprises the following steps: depositing a reticular niobium film on the surface of a tin-titanium alloy rod through 3D printing to obtain a tin-titanium-niobium alloy rod; drilling a hole in the center of the tin-titanium-niobium alloy rod, and inserting a tin-silver alloy rod to obtain the tin-titanium-niobium-silver alloy rod; the tin-titanium-niobium-silver alloy bar is put into the Ni3Sn-copper-niobium composite tube, and then an internal tin method Ni3Sn sub-component is obtained; sequentially putting the internal tin method Ni3Sn subcomponents into the tantalum tube and the oxygen-free copper tube to obtain an internal tin method Ni3Sn blank; and stretching the inner tin method Ni3Sn blank to obtain the Ni3Sn superconducting wire. Due to the existence of the silver element, uniform diffusion of the tin element in the heat treatment process is facilitated, the netted niobium film is deposited on the surface of the tin-titanium alloy rod through 3D printing, the precision and quality of the niobium film are guaranteed, more high-quality Ni3Sn crystal grains can be generated in the heat treatment process of the wire, and the performance of the Ni3Sn wire prepared through the internal tin method is improved.

The invention discloses a copper-silver alloy and a preparation method thereof.The preparation method comprises the following steps that silver alloying is conducted, specifically, a silver raw material and rare earth elements are added into a vacuum induction furnace to be mixed, and a silver alloy melt is obtained after heating and melting are conducted in the vacuum atmosphere; copper alloying is conducted, specifically, electrolytic copper is added into a non-vacuum induction furnace to be smelted, phosphorus and rare earth elements are added for alloying after heating melting, and a copper alloy melt is obtained; horizontal continuous casting: respectively carrying out horizontal continuous casting on the silver alloy melt and the copper alloy melt to obtain a silver alloy plate and a copper alloy plate; the multiple layers of silver alloy plates and the multiple layers of copper alloy plates are alternately stacked in a silver-copper-silver-... mode and placed in hot extrusion equipment to be subjected to hot extrusion, and a composite plate is formed; and cold drawing is conducted, specifically, the composite board is subjected to cold drawing to obtain the copper-silver alloy, the copper-silver alloy can be used as an electric contact material, the preparation method is low in cost, and the prepared copper-silver alloy has high conductivity, high hardness and arc erosion resistance.

The invention discloses an enhanced Raman scattering substrate for chiral molecule detection and a preparation method, and relates to the technical field of spectral analysis and chiral recognition. Chiral cysteine is induced at the core of the gold nanorod to form a spiral chiral gold-silver alloy layer and then wraps the zirconium-based metal organic framework, the synthesized chiral gold rod (at) MOF material has excellent LPSR effect and chiral electromagnetic field, and the MOF layer on the surface can well adsorb molecules to be detected to enter a plasma hot spot area. The Raman substrate is excellent in SERS performance. According to the composite material, through the dual effects of molecular enrichment and electromagnetic enhancement, enantiomers are distinguished directly through SERS intensity, and labeling or catalytic conversion is not needed.

The invention discloses a method for separating and recovering a silver or silver alloy cold composite copper rivet, which comprises the following steps of: firstly utilizing hydrogen and then utilizing oxygen in air at a high temperature to reduce the interface bonding force of silver or silver alloy and copper, and finally separating silver or silver alloy leftover materials and copper leftover materials by utilizing a roller. The method has the advantages that the silver or silver alloy cold composite copper rivets can be recycled, batch production can be achieved, use of chemical reagents is avoided, and the production cost is reduced.

Active solder paste compositions for cladding ceramic with copper, methods for cladding ceramic with copper, and copper-clad ceramic materials. Active solder paste compositions comprise, on the basis of the total weight of the active solder paste composition, 1-20 wt % of a first metal powder and 75-94 wt % of a second metal powder, with the balance being a flux, wherein the first metal powder contains titanium hydride and the second metal powder contains a copper-phosphorus-silver alloy. The active solder paste compositions can not only decrease the silver content, but can also reduce the welding temperature. Moreover, the connection strength of Ti and Cu is further enhanced, and the welding strength is improved, such that the material is less prone to segregation.

The invention belongs to the technical field of target materials, and particularly discloses a silver alloy target material and a preparation method and application thereof. The silver alloy target material comprises the following raw material components in percentage by weight: 99.25 to 99.93 percent of Ag, 0.05 to 0.55 percent of Ce, 0.01 to 0.05 percent of aluminum-copper alloy and 0.01 to 0.15 percent of manganese-copper alloy. On one hand, a certain amount of Ce, Al-Cu alloy and Mn-Cu alloy are added into Ag for microalloying; and on the other hand, the microstructure form is regulated and controlled in combination with forging and hot rolling treatment in the manufacturing process. And finally, on the premise that the reflectivity is not reduced, the vulcanization resistance and the oxidation resistance are greatly improved, the silver alloy target material has high hardness and is easy to process, the time for starting blackening vulcanization of the silver alloy target material is 8.0-11.2 hours, the time for starting blackening oxidation of the silver alloy target material is 7.5-10.6 hours, and the Vickers hardness of the silver alloy target material is 97-138.

The invention provides a preparation method of a graphdiyne-loaded bimetallic nano material for VOCs adsorption. The preparation method comprises the following steps: S1, synthesizing a large-area and low-defect graphdiyne film by using an in-situ interface growth method; and S2, loading bimetallic nanoparticles on the surface of graphdiyne by adopting a co-impregnation-step reduction method. Meanwhile, the invention provides the graphdiyne-loaded bimetallic nano-material for VOCs adsorption, the graphdiyne-loaded bimetallic nano-material is prepared by adopting the preparation method, the graphdiyne-loaded bimetallic nano-material comprises Cu-Ag alloy nano-particles and Cu + active sites, Cu + accounts for 90% or above of the total copper content, and the nano-particles are anchored to the graphdiyne ring through a Cu-O-C equivalent key; in the aspects of stability and regeneration performance, after 20 times of adsorption-desorption cycle tests, the material capacity retention rate is gt; 90%.

The present invention discloses a gold-silver alloy bump for replacing a pure gold bump in flip-chip packaging and a preparation method thereof, belonging to the technical field of electroplating gold-silver alloys. The gold-silver alloy bump is composed of two layers of gold-silver alloy layers, namely a connection layer and a protective layer; the content of gold in the connection layer is 20-50 wt%; the thickness of the protective layer is much smaller than that of the connection layer, and the content of gold is above 60 wt%; the average grain size of the grains in the gold-silver alloy layer is 0.10-0.30 μm. The gold-silver alloy bump provided by the present invention has hardness, roughness and anti-sulfuration performance comparable to those of a pure gold bump, can meet the technical requirements of flip-chip packaging, and can greatly reduce costs at the same time. The method for the gold-silver alloy bump provided by the present invention can obtain the double-layer gold-silver alloy bump of the present invention by only changing the current density through the same equipment and plating solution, simplifies the preparation process, improves the production efficiency, and reduces the production cost.

The invention relates to the technical field of silver alloy, in particular to a method for effectively inhibiting migration of silver ions in silver alloy, which comprises the following steps: step 1, putting electrolytic silver with the purity of more than 99.99% into a smelting furnace for smelting, covering by using a covering agent, and obtaining molten silver after smelting; 2, modified silicon dioxide is added into the silver melt in the step 1, and silver alloy melt is obtained; 3, the smelting furnace is vacuumized, then mixed gas of hydrogen and nitrogen is introduced into the smelting furnace, and heat preservation is conducted for 20-60 min; and 4, the silver alloy melt is subjected to converter casting after standing. According to the method for effectively inhibiting migration of the silver ions in the silver alloy, grains can be refined through indium in the alloy, the grain boundary structure can be improved, and migration of the silver ions along the grain boundary is inhibited; indium on the surface of the alloy can form a compact indium oxide film on the surface of the silver alloy to isolate direct contact of external moisture, electrolyte and silver, so that electrochemical dissolution and migration of silver ions are reduced.

The invention discloses a contact, a reed structure and an electromagnetic relay, a contact surface of the contact comprises a first contact area and a second contact area, and the first contact area comprises an initial contact position when the contact is closed; the second contact area comprises a final contact position when the contact is closed and is used for conducting current; the first contact area and the second contact area are different areas, the first contact area is made of a first silver alloy, the second contact area is made of a second silver alloy, and the first silver alloy and the second silver alloy are different silver alloy materials. The silver alloy design of the contact is optimized, the limitation that in the prior art, a single silver alloy material cannot meet multiple functional requirements at the same time is overcome, and the contact can achieve diversified functions, so that the comprehensive performance of the contact can be remarkably improved, the capacity of the contact for adapting to complex working conditions can be improved, and the application range can be expanded.

The invention discloses an anti-corrosion process for chemically plating nickel and gold on a gold-silver alloy or pure silver bump, which is characterized by comprising the following steps of: forming a metal bump structure on the surface of a substrate; performing patterning processing on the metal bump structure to form a metal bump of a target pattern; performing pretreatment on the metal bump, wherein the pretreatment comprises acid pickling, micro-etching, dilute nitric acid cleaning and deionized water rinsing; performing zinc replacement treatment on the pretreated metal bump for at least two times to activate the surface; the activated metal bump is placed in a chemical nickel plating solution for reaction, so that a continuous nickel metal layer is formed on the surface of the metal bump; after the nickel layer is formed, the nickel layer is further placed in a chemical gold plating solution for reaction, and a continuous metal gold layer is formed on the surface of the nickel layer; and rinsing and drying the gold-plated structure to obtain the metal bump structure with the anti-corrosion performance.

The invention discloses an indium-silver alloy and a preparation method and application thereof, and relates to the technical field of precious metal material manufacturing. The preparation method of the indium-silver alloy comprises the following steps: S1. heating and melting raw materials indium and raw materials silver respectively to obtain molten indium and molten silver; S2. pouring the molten silver obtained in step S1 into the molten indium obtained in step S1 and uniformly mixing them into an alloy melt; S3. cooling and solidifying the alloy melt obtained in step S2; S4. heating and melting the solidified alloy obtained in step S3 under a vacuum environment and keeping the temperature to obtain an alloy melt again, and cooling to obtain an indium-silver alloy. The present invention does not require heating all raw materials to a high temperature to uniformly disperse silver in an indium matrix, thereby reducing material loss caused by volatilization and oxidation. By repeatedly melting the alloy in a vacuum at a relatively low temperature, on the one hand, gas inclusions in the alloy are reduced and the alloy composition is made uniform, and on the other hand, the volatilization of indium in the degassing process is reduced.

A metallic sealing tape has a metallic layer and a layer of a pressure-sensitive adhesive disposed on one side of the metallic layer. The metallic layer is comprised of a brazing alloy, and may, e.g., comprise a thin foil of the brazing alloy. The brazing alloy may be, e.g., a copper-phosphorus alloy or a copper-phosphorus-silver alloy. A method for using the metallic sealing tape includes sealing a joint between two pipes with the metallic sealing tape and brazing the joint without removing the metallic sealing tape. The brazing may include heating the metallic sealing tape and may also include adding additional filler metal to the joint.

The invention provides a metallographic corrosion method of a Ti-Ag alloy and the Ti-Ag alloy, and relates to the technical field of metallographic detection. The metallographic corrosion method comprises the following steps: machining Ti-Ag alloy so as to form a microscopic structure observation plane on the Ti-Ag alloy; the microscopic structure observation plane is ground on a metallographic phase pre-grinding machine, and the ground microscopic structure observation plane is placed on a polishing machine to be subjected to mechanical polishing; etching the mechanically polished microscopic structure observation plane by using an etchant solution to obtain a microscopic structure observation plane to be observed; wherein the corrosion solution comprises ammonium hydrogen fluoride, hydrofluoric acid and water, and the ratio of the ammonium hydrogen fluoride to the hydrofluoric acid to the water is (5-10) g: (10-20) mL: 100 mL. According to the method, the metallographic corrosion effect of the Ti-Ag alloy can be improved.

The invention discloses an Ag-Cu-Al alloy thin film and a preparation method thereof. By atomic content percentage, Cu is 4-28%, Al is 3-18.3%, and the rest is Ag. The Ag-Cu-Al alloy thin film is prepared by magnetron sputtering co-sputtering. The obtained thin film has uniform composition and dense structure. In magnetron sputtering co-sputtering, the content of Cu and Al in the Ag-Cu-Al alloy thin film is adjusted by controlling the deposition power, so that the microstructure of the alloy thin film forms a nanocrystalline, ultrafine nanocrystalline or crystal-amorphous dual-phase nanostructure. The alloying of Cu and Al can effectively improve the mechanical properties of the Ag alloy thin film, and its strengthening effect increases with the increase of the content of Cu and Al.

The present invention belongs to the field of target material technology, and specifically discloses a silver alloy target material, its preparation method and application. The raw material components of the silver alloy target material include, by weight percentage: Ag 99.25-99.93%, Ce 0.05-0.55%, aluminum-copper alloy 0.01-0.05%, and manganese-copper alloy 0.01-0.15%. On the one hand, the present invention performs microalloying by adding a certain amount of Ce, Al-Cu alloy and Mn-Cu alloy to Ag; on the other hand, the microstructure morphology is regulated by combining forging and hot rolling treatments during the manufacturing process. Ultimately, without reducing the reflectivity, a significant improvement in anti-sulfurization and oxidation performance is achieved, and the target material has high hardness and is easy to process. The silver alloy target material starts to turn black and sulfurized in 8.0-11.2 hours, starts to turn black and oxidized in 7.5-10.6 hours, and has a Vickers hardness of 97-138.

A fusible link element (10; 15; 25; 35) comprising a metal composite material in which a first fusible metal (11; 21; 31) and a second fusible metal (12; 22; 32) are layered on top of each other, wherein the second fusible metal (12; 22; 32) has a lower melting temperature than the first fusible metal (11; 21; 31), characterized by the fact that the first fusible metal (11; 21; 31) is a Sn-Ag alloy and the Sn-Ag alloy contains at least 20 wt% and at most 30 wt% Ag, and the second fusible metal (12; 22; 32) is a Sn-Bi alloy and the Sn-Bi alloy contains at least 40 wt% and at most 70 wt% Bi, wherein at a common working temperature at least part of a component of the second fusible metal (12; 22; 32) is melted and part of a component of the first fusible metal (11; 21; 31) is melted, and where, at the common working temperature, the difference between a liquidus temperature and a solidus temperature of the first fusible metal (11; 21; 31) and the second fusible metal (12; 22; 32) is reduced by a shift in the equilibrium of Sn between the first fusible metal (11; 21; 31) and the second fusible metal (12; 22; 32) and by a mutual diffusion of Ag and Bi between the first fusible metal (11; 21; 31) and the second fusible metal (12; 22; 32).

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 μm or more and 0.01 μm or less.

An aqueous composition including (a) metal ions including tin ions and silver ions and (b) at least one complexing agent of formula C11RC12-XC11-RC11   (C11)and their salts,whereXC11 is selected from(a) a divalent 5 or 6 membered aromatic N-heterocyclic group;(b) a divalent 6 membered aromatic carbocyclic group; and(c) a divalent 5 or 6 membered aliphatic N-heterocyclic group including one N atom and optionally a second heteroatom selected from N and O; all of which may be unsubstituted or substituted by one or more OH or one or more RC14;RC11 is selected from ; andRC12 is selected from RC11, XC11-RC11, H, OH, NRC142, C1 to C10 alkyl, and C1 to C10 alkoxy

The present application discloses a copper-silver alloy and a preparation method thereof, which comprises the following steps: silver alloying: adding a silver raw material and a rare earth element into a vacuum induction furnace for mixing, heating and melting in a vacuum atmosphere to obtain a silver alloy melt; copper alloying: adding electrolytic copper into a non-vacuum induction furnace for smelting, heating and melting, and then adding phosphorus and rare earth elements for alloying to obtain a copper alloy melt; horizontal continuous casting: horizontally continuous casting the above-mentioned silver alloy melt and copper alloy melt respectively to obtain silver and copper alloy plates; hot extrusion molding: alternately stacking multiple layers of silver alloy plates and copper alloy plates in a "silver-copper-silver-..." manner, placing them in a hot extrusion device for hot extrusion to form a composite plate; cold drawing: cold drawing the composite plate into a material to obtain a copper-silver alloy, which can be used as an electrical contact material. The preparation method is low in cost, and the obtained copper-silver alloy has high conductivity, high hardness and resistance to arc erosion.

The invention relates to the field of integrated circuit packaging, in particular to a gold-clad silver alloy bonding wire and a preparation method and application thereof. The gold-clad silver alloy bonding wire is mainly made of a silver alloy core material and a pure gold pipe material coated outside the silver alloy core material. The silver alloy core material comprises the following components in parts by mass: 90 to 99 parts of silver, 0.5 to 5 parts of nickel, 0.1 to 3.0 parts of palladium, 0.35 to 3.5 parts of indium and 0.05 to 1 part of yttrium. The gold-clad silver alloy bonding wire has the advantages of being stable in performance and free of residues on the surface, and meanwhile has high corrosion resistance.

The invention discloses a metal conductive film for EC, a method, an assembly and application, and the conductive film comprises a first hardening layer, a flexible substrate, a second hardening layer, a bottom sealing cover layer, a first silver function layer, an intermediate dielectric layer, a second silver function layer, a first top sealing cover layer and an external sealing cover layer which are sequentially arranged. The total thickness of the first silver functional layer and the second silver functional layer is 14-18nm, d2-d1 < = 4nm, d1 is the thickness of the first silver functional layer, and d2 is the thickness of the second silver functional layer. Through the optical design of the film layer, the high light transmittance of the product is kept, and the light transmittance of the visible light band is larger than or equal to 83%. Meanwhile, by means of the technological means, Ag alloy is used, special sealing cover layer gold is added, and the durability and reliability of the product can be greatly improved.