171 results about "Ag alloy" patented technology

The invention discloses an enhanced Raman scattering substrate for chiral molecule detection and a preparation method, and relates to the technical field of spectral analysis and chiral recognition. Chiral cysteine is induced at the core of the gold nanorod to form a spiral chiral gold-silver alloy layer and then wraps the zirconium-based metal organic framework, the synthesized chiral gold rod (at) MOF material has excellent LPSR effect and chiral electromagnetic field, and the MOF layer on the surface can well adsorb molecules to be detected to enter a plasma hot spot area. The Raman substrate is excellent in SERS performance. According to the composite material, through the dual effects of molecular enrichment and electromagnetic enhancement, enantiomers are distinguished directly through SERS intensity, and labeling or catalytic conversion is not needed.

The invention discloses an anti-corrosion process for chemically plating nickel and gold on a gold-silver alloy or pure silver bump, which is characterized by comprising the following steps of: forming a metal bump structure on the surface of a substrate; performing patterning processing on the metal bump structure to form a metal bump of a target pattern; performing pretreatment on the metal bump, wherein the pretreatment comprises acid pickling, micro-etching, dilute nitric acid cleaning and deionized water rinsing; performing zinc replacement treatment on the pretreated metal bump for at least two times to activate the surface; the activated metal bump is placed in a chemical nickel plating solution for reaction, so that a continuous nickel metal layer is formed on the surface of the metal bump; after the nickel layer is formed, the nickel layer is further placed in a chemical gold plating solution for reaction, and a continuous metal gold layer is formed on the surface of the nickel layer; and rinsing and drying the gold-plated structure to obtain the metal bump structure with the anti-corrosion performance.

A metallic sealing tape has a metallic layer and a layer of a pressure-sensitive adhesive disposed on one side of the metallic layer. The metallic layer is comprised of a brazing alloy, and may, e.g., comprise a thin foil of the brazing alloy. The brazing alloy may be, e.g., a copper-phosphorus alloy or a copper-phosphorus-silver alloy. A method for using the metallic sealing tape includes sealing a joint between two pipes with the metallic sealing tape and brazing the joint without removing the metallic sealing tape. The brazing may include heating the metallic sealing tape and may also include adding additional filler metal to the joint.

The invention provides a metallographic corrosion method of a Ti-Ag alloy and the Ti-Ag alloy, and relates to the technical field of metallographic detection. The metallographic corrosion method comprises the following steps: machining Ti-Ag alloy so as to form a microscopic structure observation plane on the Ti-Ag alloy; the microscopic structure observation plane is ground on a metallographic phase pre-grinding machine, and the ground microscopic structure observation plane is placed on a polishing machine to be subjected to mechanical polishing; etching the mechanically polished microscopic structure observation plane by using an etchant solution to obtain a microscopic structure observation plane to be observed; wherein the corrosion solution comprises ammonium hydrogen fluoride, hydrofluoric acid and water, and the ratio of the ammonium hydrogen fluoride to the hydrofluoric acid to the water is (5-10) g: (10-20) mL: 100 mL. According to the method, the metallographic corrosion effect of the Ti-Ag alloy can be improved.

The present invention belongs to the field of target material technology, and specifically discloses a silver alloy target material, its preparation method and application. The raw material components of the silver alloy target material include, by weight percentage: Ag 99.25-99.93%, Ce 0.05-0.55%, aluminum-copper alloy 0.01-0.05%, and manganese-copper alloy 0.01-0.15%. On the one hand, the present invention performs microalloying by adding a certain amount of Ce, Al-Cu alloy and Mn-Cu alloy to Ag; on the other hand, the microstructure morphology is regulated by combining forging and hot rolling treatments during the manufacturing process. Ultimately, without reducing the reflectivity, a significant improvement in anti-sulfurization and oxidation performance is achieved, and the target material has high hardness and is easy to process. The silver alloy target material starts to turn black and sulfurized in 8.0-11.2 hours, starts to turn black and oxidized in 7.5-10.6 hours, and has a Vickers hardness of 97-138.

A fusible link element (10; 15; 25; 35) comprising a metal composite material in which a first fusible metal (11; 21; 31) and a second fusible metal (12; 22; 32) are layered on top of each other, wherein the second fusible metal (12; 22; 32) has a lower melting temperature than the first fusible metal (11; 21; 31), characterized by the fact that the first fusible metal (11; 21; 31) is a Sn-Ag alloy and the Sn-Ag alloy contains at least 20 wt% and at most 30 wt% Ag, and the second fusible metal (12; 22; 32) is a Sn-Bi alloy and the Sn-Bi alloy contains at least 40 wt% and at most 70 wt% Bi, wherein at a common working temperature at least part of a component of the second fusible metal (12; 22; 32) is melted and part of a component of the first fusible metal (11; 21; 31) is melted, and where, at the common working temperature, the difference between a liquidus temperature and a solidus temperature of the first fusible metal (11; 21; 31) and the second fusible metal (12; 22; 32) is reduced by a shift in the equilibrium of Sn between the first fusible metal (11; 21; 31) and the second fusible metal (12; 22; 32) and by a mutual diffusion of Ag and Bi between the first fusible metal (11; 21; 31) and the second fusible metal (12; 22; 32).

An aqueous composition including (a) metal ions including tin ions and silver ions and (b) at least one complexing agent of formula C11RC12-XC11-RC11   (C11)and their salts,whereXC11 is selected from(a) a divalent 5 or 6 membered aromatic N-heterocyclic group;(b) a divalent 6 membered aromatic carbocyclic group; and(c) a divalent 5 or 6 membered aliphatic N-heterocyclic group including one N atom and optionally a second heteroatom selected from N and O; all of which may be unsubstituted or substituted by one or more OH or one or more RC14;RC11 is selected from ; andRC12 is selected from RC11, XC11-RC11, H, OH, NRC142, C1 to C10 alkyl, and C1 to C10 alkoxy

The present application discloses a copper-silver alloy and a preparation method thereof, which comprises the following steps: silver alloying: adding a silver raw material and a rare earth element into a vacuum induction furnace for mixing, heating and melting in a vacuum atmosphere to obtain a silver alloy melt; copper alloying: adding electrolytic copper into a non-vacuum induction furnace for smelting, heating and melting, and then adding phosphorus and rare earth elements for alloying to obtain a copper alloy melt; horizontal continuous casting: horizontally continuous casting the above-mentioned silver alloy melt and copper alloy melt respectively to obtain silver and copper alloy plates; hot extrusion molding: alternately stacking multiple layers of silver alloy plates and copper alloy plates in a "silver-copper-silver-..." manner, placing them in a hot extrusion device for hot extrusion to form a composite plate; cold drawing: cold drawing the composite plate into a material to obtain a copper-silver alloy, which can be used as an electrical contact material. The preparation method is low in cost, and the obtained copper-silver alloy has high conductivity, high hardness and resistance to arc erosion.

The invention discloses a metal conductive film for EC, a method, an assembly and application, and the conductive film comprises a first hardening layer, a flexible substrate, a second hardening layer, a bottom sealing cover layer, a first silver function layer, an intermediate dielectric layer, a second silver function layer, a first top sealing cover layer and an external sealing cover layer which are sequentially arranged. The total thickness of the first silver functional layer and the second silver functional layer is 14-18nm, d2-d1 < = 4nm, d1 is the thickness of the first silver functional layer, and d2 is the thickness of the second silver functional layer. Through the optical design of the film layer, the high light transmittance of the product is kept, and the light transmittance of the visible light band is larger than or equal to 83%. Meanwhile, by means of the technological means, Ag alloy is used, special sealing cover layer gold is added, and the durability and reliability of the product can be greatly improved.

The invention discloses a composite solder ball, a preparation method and a stacked packaging structure, and the composite solder ball comprises a composite inner core which is composed of a continuous phase matrix and a strengthening phase, the strengthening phase accounts for 15-30% of the total volume of the inner core, the compression modulus of the composite inner core is larger than or equal to 3 GPa, and the thermal expansion coefficient of the composite inner core is smaller than or equal to 55 ppm / DEG C; the polymer core is coated with the metal transition layer; and the tin-silver alloy outer layer covers the metal transition layer. The composite inner core is composed of a continuous phase polymer matrix and a strengthening phase fiber network, high-temperature compression resistance and low thermal expansion characteristics are achieved through a specific volume ratio and a specific mass ratio, the solid-state rigidity characteristic is kept in a welding high-temperature interval, mechanical loads are directly borne, the interlayer height collapse risk is thoroughly eliminated, and the welding quality is improved. The metal transition layer forms a mechanical interlocking combination interface with the inner core, and the tin-silver alloy outer layer provides weldability and an electric connection function, so that double-function technology fusion that the composite solder ball can play a supporting role and also can play a welding role is realized.

The application provides a superfine nanocrystalline silver alloy and a preparation method thereof, and belongs to the technical field of superfine crystal preparation.The superfine nanocrystalline silver alloy is prepared by the following steps: firstly, rolling the silver alloy; secondly, breaking the original grains in the silver alloy by rolling; thirdly, transforming the broken grains into equiaxed grains by annealing; fourthly, cross-extruding under ultralow temperature to inhibit recovery recrystallization; fifthly, breaking the equiaxed grains into superfine equiaxed grains by cross-extruding; sixthly, further refining the grains by ultralow-temperature rolling; and finally, recrystallizing the broken grains by annealing after rolling, so that the superfine nanocrystalline silver alloy with nanometer grain size is obtained; the superfine nanocrystalline silver alloy has uniform microstructure, obvious strength improvement, good conductivity and ductility, and the preparation method is simple, easy to popularize in large scale, and has wide application prospect in industry.

The present invention relates to the technical field of semiconductor devices, and disclosed are a semiconductor device structure, a preparation method therefor, and a corresponding chip. The semiconductor device structure comprises a gold-silver alloy bump and an UBM layer, the UBM layer being composed of a seed layer and an adhesion layer, a bottom portion of the gold-silver alloy bump being connected to the seed layer, the adhesion layer being connected to a chip electrode, and a difference in thermal expansion coefficients between the gold-silver alloy bump and the adhesion layer being below 9 ppm / K. The technical solution provided in the present invention can solve the technical problem that gold-silver alloy bumps and existing UBM layers cannot pass high-low temperature cycle reliability testing. The semiconductor device structure and the corresponding chip obtained by the technical solution of the present invention can pass various reliability tests, thus it is feasible to replace a pure gold bump with a gold-silver alloy, thereby greatly reducing production costs of a flip-chip.

The high-strength high-conductivity copper-silver alloy disclosed by the application has the following weight percentage composition: 0.5-12% of Ag, 0.1-1.5% of B, 0.1-2.0% of Mn, the balance of Cu and inevitable impurities. The application simultaneously adds Mn and B elements in the Cu-Ag alloy to form a high-melting-point B-Mn compound at high temperature, thereby improving the strength of the alloy, having little influence on the electrical conductivity, and due to the combined action of the dispersion strengthening of the high-melting-point hard B-Mn compound and the work hardening of the Ag fiber phase and Cu matrix, the alloy has excellent comprehensive properties such as thermal stability, tensile strength, hardness and electrical conductivity. The tensile strength of the alloy is above 600 MPa, the electrical conductivity is above 65% IACS, the Vickers hardness is above 200 HV, and after being kept at 180 DEG C for 24 hours, the reduction rate of the tensile strength is not more than 8%, and the alloy can be applied to the power, electronic, communication and electromagnetic conversion industries.

The invention discloses a preparation method of an in-situ Ag NWs fiber reinforced Cu-Ag alloy wire. The method comprises the following steps: 1, synthesizing Ag NWs in situ based on a liquid phase polyol method; 2, preparing a pre-dispersed Ag NWs fiber solution; 3, Cu powder is poured into the pre-dispersed Ag NWs fiber solution to be stirred and dried; 4, performing heat treatment to obtain Cu / Ag NWs composite powder; 5, performing spark plasma sintering to obtain a Cu / Ag NWs composite bar; and sixthly, cold drawing machining is conducted after tubing. Through in-situ synthesis of Ag NWs, mixing, sintering and drawing deformation processes, a microstructure of a large-length-diameter-ratio Ag NWs fiber reinforced submicron copper matrix is constructed from the angles of low Ag content, avoidance of grain growth and reduction of electron scattering, and a Cu-Ag alloy wire with good strength and conductivity matching is obtained under the low Ag content; the magnet is suitable for the fields of electronic communication, power transmission, high-field pulse magnets and the like.

The invention relates to the technical field of new materials, in particular to an Al-Cu-Li-Mg-Ag-Zn-Mn-Zr series high-strength and high-heat-resistance aluminum lithium alloy and a preparation method thereof. According to the invention, Al-Cu-Li-Mg-Ag-Zn-Mn-Zr is used as an alloy system, a certain amount of Cu, Li, Mg and Ag alloy elements are added to obtain a core-shell structure strengthening phase T1-AgMg phase which is stable at a high temperature, a certain amount of Zn element is added to improve the intrinsic stability of the T1 phase, and a certain amount of Mn and Zr alloy elements are added to obtain strengthening phases of a T phase and an Al3Zr phase. The novel high-strength and high-heat-resistance aluminum-lithium alloy with excellent tensile property at room temperature, 250 DEG C and 300 DEG C is obtained by combining proper preparation processes such as casting, homogenization, thermal deformation, solid solution aging and the like.

To provide a terminal material and an electrical connection terminal which have an Ag coating layer having improved wear resistance due to addition of an additive and in which corrosion is suppressed.SOLUTION: A terminal material 1 includes: a base material 11; an intermediate layer 14 that is configured from Ag or an Ag alloy, the intermediate layer covering a surface of the base material 11; and a surface layer 15 that contains Ag and at least one of a sulfur-containing organic compound and a carbon material, the surface layer being in contact with the surface of the intermediate layer 14 and covering the surface of the intermediate layer 14. The purity of Ag in the intermediate layer 14 is higher than the purity of Ag in the surface layer 15, and the thickness of the intermediate layer 14 is 0.4 μm or more and 3.0 μm or less. Also, an electrical connection terminal is configured to contain the terminal material 1 and is such that, at an electrical contact part in contact with a counterpart electroconductive member, at least the intermediate layer 14 and the surface layer 15 are formed on the surface of the base material 11.SELECTED DRAWING: Figure 1

The present invention discloses a semiconductor device structure, a method for preparing the same, and a chip, belonging to the field of semiconductor device technology. The semiconductor device structure comprises a gold-silver alloy bump and an UBM layer, wherein the UBM layer is composed of a seed layer, a diffusion barrier layer, and an adhesion layer, or a diffusion barrier layer and an adhesion layer; the diffusion barrier layer is composed of a single platinum group element and / or an alloy containing a platinum group element, preferably platinum, rhodium, iridium, or an alloy thereof; the bottom of the gold-silver alloy bump is connected to the seed layer or the diffusion barrier layer, and the adhesion layer is connected to the chip electrode. By improving the UBM layer, the present invention enhances the bonding reliability between the gold-silver alloy bump and the UBM layer. The resulting semiconductor device structure can pass high-end chip reliability testing, enabling the use of gold-silver alloy instead of gold in flip-chip production.

To provide a silver alloy bonding wire that has excellent dynamic characteristics and corrosion resistance.SOLUTION: The present invention belongs to the technical field of a material for packaging, and relates particularly to a silver alloy bonding wire, and an adjustment method and use thereof. The silver alloy bonding wire according to the present invention includes a core material, and the core material includes 0.5 wt.%-0.7 wt.% of Al, 0.6 wt.%-1 wt.% of Ce, 1 wt.%-3 wt.% of carbon nano-tube, and 0.3 wt.%-0.5 wt.% of Sb, and the remainder is Ag. The silver alloy bonding wire according to the present invention improves the dynamic characteristics, processing performance, corrosion resistance, and electromigration resistance of the silver alloy bonding wire through cooperation of elements, and when used for electronic packaging, can satisfy packaging requirements for an LED device with fine wire diameter processing and a high-density lead.SELECTED DRAWING: Figure 1

An alloy consisting of 0.1 to 1 wt. %of copper (Cu), 0.1 to 5 wt. %of bismuth (Bi), 0.01 to 0.2 wt.%of nickel (Ni), 0.01 to 0.1 wt.%of chromium (Cr) and tin (Sn) as a remainder.

A method of manufacturing a metal structure for an optical semiconductor device, including a treatment step (1) of immersing in and / or applying the solution containing a polyallylamine polymer a base body, the base body including an outermost layer at a portion or entire surfaces of the base body, the outermost layer including a plating of at least one selected from the group consisting of gold, silver, a gold alloy, and a silver alloy, so as to manufacture the metal structure for an optical semiconductor device having an increased adhesion to a resin material.

The utility model relates to the antiaging structure technical field of ceramic temperature controller, and disclose an antiaging structure of ceramic temperature controller, including base, the one side fixed connection of base has the antiaging component, the inside fixed connection of base has the damping seal component, the antiaging component includes the fixed connection in the seal pad of base one side, the inboard fixed connection of seal pad has the connecting block, the one side fixed connection of connecting block has silver alloy, the bottom fixed connection of silver alloy has graphite particle dispersion layer, the damping seal component includes the fixed connection in the damping gel of base inside, the top fixed connection of base has the rubber cover, the surface fixed connection of rubber cover has the spring. The antiaging structure of ceramic temperature controller, through the setting of antiaging component, reduced the water vapor permeation to the corrosion of junction and temperature controller internal structure, reduced the ablation of the junction because of arc energy high, improved the stability of product.

The invention relates to the field of electric contact elements, in particular to a gradient failure type insulation contact structure and a preparation method thereof. The contact sequentially comprises an iron base layer, a copper conductive middle layer and a silver alloy contact layer from bottom to top. The middle area of the surface of the copper conductive intermediate layer is recessed downwards to form a mounting groove, and the opening size of the mounting position along the width direction of the contact does not exceed 2 / 3 of the total width of the upper surface of the copper conductive intermediate layer; the copper conductive middle layer forms flow guide shoulder parts on the two sides of the mounting groove; an insulating part is arranged in the mounting groove; the silver alloy contact function layer covers the upper surface of the middle layer and is combined with the flow guide shoulder part for electric conduction; a non-contact gap is formed between the bottom surface of the contact function layer and the groove bottom of the mounting groove, and the contact function layer is electrically connected with the copper conductive middle layer only through the diversion shoulders on the two sides to form an electric conduction path. The active insulation failure when the service life of the contact is ended is realized, and the fusion adhesion and short circuit risk is prevented.

Embodiments of the present application provide an electroplating solution for a gold-silver alloy and a use thereof. The electroplating solution comprises a gold ion source, a silver ion source, a first complexing agent, and a second complexing agent, wherein the first complexing agent comprises a hydantoin-based substance, and the second complexing agent comprises an organic sulfonic acid or a salt thereof. By means of a synergistic effect of the two types of complexing agents, the electroplating solution exhibits relatively high stability and can specifically inhibit electrodeposition of silver without affecting deposition of gold, thereby reducing the influence of current density fluctuations on the gold content in an alloy coating. Thus, an alloy coating having a gold content stably maintained within a range of 30-50 wt% can be produced over a relatively wide current density range having an interval width of at least 0.3 ASD.

Described herein are indium-tin-silver alloys suitable for use as lead-free solders. The alloys can comprise indium primarily or tin primarily. The alloys can further comprise copper, nickel, and iron or copper, antimony, and zinc. The compositions can be used to solder electrical connectors (18, 30) to electrical contact surfaces (16) on glass assemblies (10). Also described herein are methods of forming the alloys.

The present application belongs to the technical field of aluminum alloy material structure manufacturing, and relates to a large high-strength heat-resistant aluminum alloy hub forge and a preparation method thereof. The method is suitable for preparing a large hub with a diameter (Φ500mm~Φ800mm) x depth (200mm~400mm) x outer wall thickness (20mm~50mm). Compared with a conventional hub, the present application obtains a preparation method suitable for Al-Cu-Mg-Ag alloy large hub forgings by optimizing alloy components, combining extrusion + forging compound breaking down, medium-temperature die forging, deep cryogenic treatment and other processes, so that the large hub forgings have excellent high-strength heat-resistant performance. The room temperature yield strength is higher than 450MPa, the tensile strength is higher than 500MPa, and the elongation is higher than 8%. The 150℃ high-temperature tensile yield strength is higher than 400MPa, the tensile strength is higher than 450MPa, and the elongation is higher than 10%. The 200℃ high-temperature tensile yield strength is higher than 350MPa, the tensile strength is higher than 400MPa, and the elongation is higher than 12%.

The invention discloses a copper-silver alloy high-strength continuous transposed conductor, and relates to the technical field of transposed conductors, the copper-silver alloy high-strength continuous transposed conductor comprises a copper-silver alloy wire core, the copper-silver alloy wire core is fixedly sleeved with a composite insulating layer, the composite insulating layer is fixedly sleeved with a flame-retardant layer, and the surface of the flame-retardant layer is provided with a groove. A reinforcing piece is fixedly connected to the corner of the inner wall of each groove, a reinforcing layer is fixedly connected to the outer portion of the flame-retardant layer in a sleeving mode, heat dissipation holes are formed in the two sides of the reinforcing layer, heat is fully conducted to the two sides through the grooves for heat dissipation, the structural strength is enhanced through the reinforcing pieces, collapse is avoided, and the heat dissipation effect is improved; the hot air circulation effect is further improved on the two sides of the flame-retardant layer, and the problems that due to the arrangement of supporting strips, the supporting area is small, the outer layer structure is likely to collapse, heat dissipation is hindered, due to the supporting strips, heat dissipation spaces are not communicated, heat of the top and the bottom is difficult to transmit to the two sides to be discharged, and local heat accumulation is likely to happen are solved.

A method for producing a Cu-Ag alloy wire material, which sequentially comprises the following steps, and a Cu-Ag alloy wire material produced by the production method. Step 1: A metal rod is obtained by dissolving a metal raw material blended so as to have a composition containing 10.0-30.0 wt% of Ag, excluding unavoidable impurities, with the balance being Cu. Step 2 to step 4: while gradually increasing the cross-section reduction rate before and after processing, the cold wire drawing processing and the heat treatment are repeated three times. Step 5 to step 7: repeating the three times of cold wire drawing processing and heat treatment so that the cross-section reduction rate before and after processing is greater than that of step 2 to step 4. And a step (8) in which a Cu-Ag alloy wire material having a diameter of 0.1 mm or less is obtained by performing a cold wire drawing treatment so that the reduction rate of the cross section relative to the metal rod is 99.0-99.9999%.

The application discloses a silver alloy sheet-shaped electric contact piece corrosion inhibition treatment failure detection method and a regulation and control system, and comprises the following steps: S1: obtaining the thickness d of an organic protective film on the surface of the electric contact piece in real time through an ellipsometric spectrum org and the thickness d of an oxide film ox ; S2: inputting the thickness d of the organic protective film org or the thickness d of the oxide film ox into a preset film thickness-contact resistance correlation model to obtain a predicted contact resistance value R c ; S3: when the predicted contact resistance R c is less than or equal to 25 mΩ, the electric contact piece is determined to be qualified, and when the predicted contact resistance R c is greater than 25 mΩ, the electric contact piece is determined to be failed, a back-end processing flow is triggered, and a front-end cleaning process is returned. The application utilizes the dynamic change effect of the predicted contact resistance value R c to determine the failure of the electric contact piece in the front-end cleaning process, to timely investigate the causes of the failure of the cleaning tank, and to improve the timeliness and reliability of the electric contact piece failure detection.

There is provided a novel Ag alloy bonding wire for semiconductor devices which provides an excellent bonded ball shape during ball bonding, which is required for high-density packaging. The Ag alloy bonding wire for semiconductor devices is made of an Ag alloy that contains one or more elements selected from the group consisting of Te, Bi and Sb and that satisfies at least one of the following conditions (1) to (3):(1) a concentration of Te is 5 to 500 at. ppm;(2) a concentration of Bi is 5 to 500 at. ppm; and(3) a concentration of Sb is 5 to 1,500 at. ppm.

This invention discloses a chiral gold-silver-platinum alloy nanomaterial, its preparation method, and its applications, relating to the field of metal nanomaterials technology. The invention includes: a substrate, wherein the substrate is chiral helical gold-silver alloy nanoparticles, and the substrate has a left-handed or right-handed helical morphology; and platinum nanoparticles, wherein the platinum nanoparticles are selectively deposited on the helical edges of the substrate by photodeposition, and the chiral helical morphology of the substrate is preserved after deposition. The photodeposition method is a photodeposition reaction performed under circularly polarized light irradiation with a specific helical direction. This invention provides more active sites for catalytic reactions and effectively avoids the displacement etching of the gold-silver alloy shell by platinum in traditional deposition methods, preserving the complete helical chiral structure.