489 results about "Ag alloy" patented technology

Provided is a near-field light transducer with a propagation edge in which the generation of defects is suppressed. The transducer is formed of a Ag alloy and comprises an edge, the edge comprising a portion to be coupled with a light in a surface plasmon mode, the edge extending from the portion to a near-field light generating end surface, and the edge being configured to propagate surface plasmon excited by the light. Further, a curvature radius of the rounded edge is set in the range from 6.25 nm to 20 nm. In the edge and its vicinity, the generation of defects such as cracking and chipping is suppressed. Thereby improved are a propagation efficiency of surface plasmon and a light use efficiency of the transducer. The Ag alloy preferably contains at least one element selected from a group of Pd, Au, Cu, Ru, Rh and Ir.

A process for forming a solder bump on an under bump metal structure in the manufacture of a microelectronic device comprising exposing the under bump metal structure to an electrolytic bath comprising a source of Sn²⁺ ions, a source of Ag⁺ ions, a thiourea compound and/or a quaternary ammonium surfactant; and supplying an external source of electrons to the electrolytic bath to deposit a Sn—Ag alloy onto the under bump metal structure.

A circuit substrate of the present invention uses as component materials for gate lines and gate electrodes, silver alloy material containing silver as a main component, and at least one element selected from the group consisting of tin, zinc, lead, bismuth, indium, and gallium. It is especially preferable that the silver alloy material mainly consisting of silver and containing indium is used for the gate lines and the gate electrodes. With this, it is possible to provide silver alloy material whose resistance value, adhesion, plasma resistance, and reflection characteristics can be appropriately adjusted by the adjustment of the content of indium. Further, it is also possible to apply the alloy in accordance with the characteristic required for each part of the circuit substrate.

A semiconductor light emitting device having high reflectivity and a high electrical contact property between a light reflection layer and a semiconductor layer is provided. The semiconductor light emitting device is formed by laminating a semiconductor layer, a light reflection layer and a protective layer on a substrate in this order. The semiconductor layer is formed by laminating a buffer layer, a GaN layer, an n-type contact layer, an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer in this order. The light reflection layer is formed by depositing an Ag alloy on a surface of the p-type contact layer while heating the substrate at, for example, a temperature from 100° C. to less than 400° C. After the semiconductor layer, the light reflection layer and the protective layer are formed, the semiconductor layer, the light reflection layer and the protective layer are heated in a predetermined time range at an ambient temperature within a higher temperature range than a temperature range at the time of heating the substrate.

The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.

The invention, relating to the field of ceramic surface modification, discloses a power module metalized ceramic substrate and a metallization method thereof. The method disclosed herein comprises the following steps: firstly depositing copper or silver with a thickness of 0.1-5 mum on the surface of a power module ceramic substrate by magnetron sputtering or arc ion plating; then depositing copper, silver, copper alloy or silver alloy with a thickness of 50-1000 mum by chemical plating or electroplating; and finally depositing silver, gold, tin or nickel with a thickness of 0.1-5 mum by magnetron sputtering or arc ion plating, or depositing a tin or nickel layer with a thickness of 2-5mum by chemical plating or electroplating. According to the invention, the metalized ceramic component obtained by the method disclosed herein has large current-carrying capacity, strong thermal conductivity and heat dissipation capability, good gas tightness, reliable and stable quality, etc., is easily welded with other metals or ceramics and composite materials, and can be used in the fields of vacuum devices, aerospace, aviation, radio and television, communication, metallurgy, medicine, high-energy physics, etc.

The invention relates to a transparent conducting thin film with enhanced thermal stability and a preparation method and application thereof. The transparent conducting thin film consists of a substrate, a first semiconductor layer, a silver alloy layer and a second semiconductor layer sequentially from bottom to top; according to the silver alloy layer, metal silver is combined with aluminum, zinc, titanium, copper, magnesium, nickel, rare earth elements or chromium to form a bi-element silver alloy layer or a multi-element silver alloy layer. The transparent conducting thin film provided by the invention can be used for photoelectric devices, such as organic light-emitting devices (OLEDs), organic solar cells and perovskite batteries; furthermore, on the basis of improving the thermal stability of the photoelectric devices, the dose of the photoelectric devices on a silver material per unit area can be reduced, device cost can be beneficially controlled, resources are saved; and the transparent conducting thin film also can be applied to magnetic shielding, special functional window coatings, transparent heat preservation building glass and the like.

The invention relates to a surface-enhanced Raman scattering active substrate and a preparation method thereof. A HAuCl4 solution and a AgNO3 solution are added in a polyvinyl alcohol aqueous solution with a certain mass concentration, then sodium citrate is added to prepare a polyvinyl alcohol/Au-Ag alloy nanoparticle spinning solution after sufficient reaction, and a parallel type electrostatic spinning technology is adopted to obtain the surface-enhanced Raman scattering active substrate with a polyvinyl alcohol/Au-Ag alloy nanoparticle composite nanofiber structure, wherein the content of Au-Ag alloy nanoparticles is 2*10<-4> to 2*10<-2> mol/g, and the molar ratio of Au:Ag is (1:2)-(1:3). As gold-silver alloy nanoparticles can absorb light from blue to green and the plasma resonance wavelength can be controlled and adjusted between silver and gold, the applicable wavelength range of the surface-enhanced Raman scattering active substrate material provided by the invention is wider than that of a gold or silver single-component substrate.

The present invention relates to a high temperature antioxidant base metal composition and its production process. The composition includes Ni in 30-54 pts.wt. and Ag in 46-70 pts.wt, and the Ag alloy forms thin antioxidant layer on the surface of Ni grains. The production process includes preparing sensitizing liquid, activating liquid, ammonia solution of silver and reductant; dipping, stirring, pickling, sensitizing, cleaning, activating, reduction, heating, and other steps. The said process can produce electrode with the conducting performance similar to that of noble metal but only one tench in cost. The application of the present invention can reduce the cost of MPT, MLCC and other electronic elements and product. The present invention has the features of simple process, low production cost and capacity of co-sintering with ceramic in atmosphere.

A gold-silver alloy bonding wire for a semiconductor device is provided. The bonding wire contains: a Au-Ag alloy including 5-40% Ag by weight in Au having a purity of 99.999% or greater; at least one element of a first group consisting of Pd, Rh, Pt, and Ir in an amount of about 50-10,000 ppm by weight; at least one element of a second group consisting of B, Be, and Ca in an amount of about 1-50 ppm by weight; at least one element of a third group consisting of P, Sb, and Bi in an amount-of about 1-50 ppm by weight; and at least one element of a fourth group consisting of Mg, TI, Zn, and Sn in an amount of about 5-50 ppm by weight. The bonding wire is highly reliable with a strong tensile strength at room temperature and high temperature and favourable bondability. When the bonding wire is looped, no rupture occurs in a ball neck region. Also, no chip cracking occurs since the ball is soft.

This invention provides Cu-Ag alloy conductor slurry and its manufacturing method including: preparing nm particles of Cu-Ag alloy, matching conductor slurry and sintering the slurry, in which, the nm particles are prepared under the mixed atmosphere of H and Ar with the DC arc plasma method and the preparation for the slurry includes: fully mixing terpinyl, EC and absolute alcohol then adding nm particles and fully beating them up to be vibrated by supersonic waves then to be added with glass power to beat them up again and vibrate them with supersonic waves to get the conductor slurry. The sinter temperature is bellow 220deg.C under 1.33Pa. Advantage: the sinter temperature is low not needing protection gas while sintering, the conductive stability is higher than Cu power slurry and ití»s possible to replace Au, Ag and Pd slurry.

An Ag-based reflection film consists of a laminate film comprising an Ag or Ag-alloy film provided thereon with a quite thin capping layer. The Ag-based reflection film can be prepared by, for instance, forming, on a substrate, an Ag or Ag-alloy film according to the sputtering technique, while using a sputtering target, for instance, having a composition corresponding to that of the pure Ag film, and Ar gas as a sputtering gas, while adding an additional gas such as O₂, only at the initial stage of the Ag or Ag-alloy film-forming step; and then forming a quite thin capping layer, on the Ag or Ag-alloy film, according to the sputtering technique, while using a sputtering target having a composition corresponding to that of the capping layer, and Ar gas as a sputtering gas, while if necessary adding an additional gas such as O₂. The Ag-based reflection film can maintain a high reflectance without causing any deterioration thereof even under the severe conditions such as those for the hydrogen sulfide-exposure test because of the presence of a quite thin capping layer. The reflection film may be applied to, for instance, those used for display devices and optics-relating ones.

The present invention relates to a lead-free bump with suppressed formation of voids, obtained by reflowing a plated film of Sn—Ag solder alloy having an adjusted Ag content, and a method of forming the lead-free bump. The lead-free bump of the present invention is obtained by forming an Sn—Ag alloy film having a lower Ag content than that of an Sn—Ag eutectic composition by plating and reflowing the plated alloy film.

The invention relates to a light-emitting device, an electronic equipment and a process of producing the light-emitting device. The invention is to provide a cathode having both a high electrical conductivity and a high transparency and the light-emitting device having the cathode. The light-emitting device (D1) includes a substrate, a light-reflecting layer (14) formed on the substrate (10), a first electrode (16) disposed on or above the light-reflecting layer (14), a light-emitting function layer (18) disposed on the first electrode (16), and an electron-injection layer (49) disposed on the light-emitting function layer (18) and a second electrode (20) formed on the electron-injection layer (49) having a second electrode (20) with a semi-transparent reflectivity. The second electrode is made of an Ag alloy having an Ag content of from 50% by atoms to 98% by atoms.

The invention discloses a silver-gold porous nanorod array, a preparation method and a purpose of the silver-gold porous nanorod array. The array comprises porous gold nanorods coated with 3-15nm silver films and arranged on a methyl methacrylate substrate coated with a gold film, wherein the nanorods are 150-250nm in length, and 50-70nm in diameter; and holes are 5-20nm in diameter. The method comprises the steps of placing an aluminum oxide template coated with a gold film in a mixed electrolytic solution for electro-deposition, obtaining an aluminum oxide template coated with the gold film and provided with a gold-silver alloy nanorod array deposited in holes, placing the aluminum oxide template in a nitric acid solution for reaction to obtain an aluminum oxide template coated with the gold film and provided with a porous gold nanorod array in holes, coating the other side of the gold film with liquid methyl methacrylate, solidifying, then sequentially placing the aluminum oxide template in a silver nitrate electrolytic solution for the electro-deposition and aqueous alkali for removing the aluminum oxide template, or sequentially placing the aluminum oxide template in aqueous alkali for removing the aluminum oxide template, coating a silver film by an ion sputtering method, and obtaining the objective product. The array can serve as an SERS (Surface Enhanced Raman Scattering) activity substrate for detecting trace organic matters.

A bonding wire comprises a core wire generally made of silver or a silver alloy, and the coating material is selected from one or more of: gold, palladium, platinum, rhodium. Alternatively, the core wire is generally made of copper or a copper alloy, and the coating material is selected from one or more of: palladium, platinum, rhodium, iridium, ruthenium. For both core wires, the coating material can be selected from a group of materials with the following characteristics: (1) the materials' melting temperature is higher than the melting temperature of the core wire material, respectively; (2) the materials' molten surface tension is higher than that of the core wire material, respectively; (3) the materials show a high resistance to oxide formation between the melting temperature of the core wire material and the melting temperature of the respective material itself; and (4) the coating material has the additional characteristic that the material's melting temperature is lower than the boiling temperature of the core wire material.

The solder contains Sn—Zn alloy(s) having a single composition ratio or a plurality of composition ratios, and Sn—Bi—Ag alloy(s) having a single composition ratio or a plurality of composition ratios. The solder includes zinc at 7 to 10 weight % both inclusive, bismuth at 0.001 to 6 weight % both inclusive, silver at 0.001 to 0.1 weight % both inclusive, and the remainder of tin when the alloys are melted in mixture.

An Al/Cu/Mg/Mn alloy for the production of semi-finished products with high static and dynamic strength properties has the following composition: 0.3-0.7 wt % silicon (Si), max. 0.15 wt. % iron (Fe), 3.5-4.5 wt % copper (Cu), 0.1-0.5 wt. % manganese (Mn), 0.3-0.8 wt. % magnesium (Mg), 0.5-0.15 wt % titanium (Ti), 0.1-0.25 wt % zirconium (Zr), 0.3-0.7 wt. % silver (Ag), max. 0.05 wt. % others individually, max 0.15 wt. % others globally, the remaining wt. % aluminum (Al). The invention further relates to a semi-finished product made for such an alloy and a method of production of a semi-finished product made for such an alloy.

The invention provides a method for manufacturing Cu-Ag alloy wires for producing extra fine Cu-Ag alloy wires at high production and extra fine Cu-Ag alloy wire. The manufacturing method for performing drawing to the blank containing 0.5 to 15.0 mass% of Ag, to fabricate extra fine wire with the final wire diameter of less than or equal to 0.05mm. The surface layer of the wire located at a midway stage of the drawing before achieving the final wire diameter wire and in which the wire diameter Phi is less than or equal to 1.0mm diameter, is removed. The removal of the surface layer is performed as follows, the thickness t of the removed surface layer satisfies: t/r >=0.02 when 1/2 of the wire diameter Phi of the wire before removing the surface layer. The obtained extra fine Cu-Ag alloy wire or the stranded wire formed by stranding the Cu-Ag alloy wire can be appropriately applied to the coaxial-cable.

The invention discloses a method for solution treatment and aging treatment which are matched with the processing of Cu-Ag alloy cold-finish drawing. A mixture with 7%-12% of Ag by weight and the rest of electrolytic Cu is melted in a vacuum induction furnace and carries out ingoting under the protection of Ar gas, the solution treatment and the aging treatment are carried out to the ingot, and the drawing deformation is carried out several times at the normal temperature. The fiber-phase composite strengthened Cu-(7-12)% Ag alloy obtained by matching the solution treatment and the aging treatment with the deformation processing has the strength of 380-1400MPa and the relative conductivity of (60-92)% IACS. The method simplified the technological process and the combination property of the alloy is close to or even exceeds the alloy with high Ag-content.

The invention discloses a fastness and hard silver alloy comprising 92.5-98.0% metal silver by weight and 2.0-7.5% other components by weight, the other components contain 0.02-7.5% germanium by weight, 0.1-7.5% copper by weight, 0.2-4.0% tin by weight, 0.01-0.5% samarium by weight, 0-5.0% indium by weight, 0-0.05% boron by weight, 0-5.0% zinc by weight, 0-1.0% manganese by weight, 0-1.5% nickel by weight, 0-0.1% silicon by weight, and 0-0.09% zirconium by weight. The silver alloy of the invention has a high rigidity and a fastness performance, can be used for producing jewelry, coins, silver dishwares, medals, etc.

The invention belongs to the technical field of metal bonding wires used for microelectronic packaging, and particularly relates to a gold and silver alloy bonding wire with a gold-plated layer on the surface and a preparation method of the gold and silver alloy bonding wire. The gold and silver alloy bonding wire is good in push-pull effort, oxidation resistance and bonding performance and low in cost, and the gold-plated layer is arranged on the surface of the gold and silver alloy bonding wire. The gold and silver alloy bonding wire with the gold-plated layer on the surface comprises a gold and silver alloy wire and is structurally characterized in that a gold protective layer is arranged on the surface of the gold and silver alloy wire.

This invention provides an organic EL device of optical resonator type where diffusion of an Ag material caused by heat generated in a manufacturing process and while light is being emitted is minimized so as to stabilize characteristics of a driving TFT. In the organic EL device of optical resonator type of the invention, an anti-diffusion layer (made of ITO or IZO) connected with the driving TFT (not shown) is formed on a glass substrate, and a semi-transmissive film (made of an Ag alloy layer) having a predetermined film thickness enabling semi-transmission of light, a transparent anode (an electrode made of ITO or IZO), an organic EL layer (e.g. made of a hole transport layer, an emissive layer, and an electron transport layer), and a cathode (made of an Ag alloy layer) serving as a reflection film having a predetermined film thickness enabling reflection of light are formed on the anti-diffusion layer in this order. The anti-diffusion layer inhibits thermal diffusion of the Ag material of the semi-transmissive film.

Silver alloys containing copper and germanium e.g. about 1 wt % Ge and of very low copper content e.g. about 0.8 wt % Cu can be precipitation hardened to 65 HV or above, whereas alloys of similar copper content and not containing germanium remain soft. In an embodiment, a silver alloy comprises 92.5-97 wt % Ag, 1-4.5 wt % Cu, 0.4-4 wt % Zn, 0.8-1.5 wt % Ge, 0 to 0.2 wt % Si, In or Sn and 0-0.2 wt % Mn, the balance being boron as grain refiner, incidental ingredients and impurities. The said alloy preferably comprises boron as grain refiner added as a boron hydride, e.g. sodium borohydride. A further group of alloys comprises a ternary alloy of silver, copper and germanium containing from more than 93.5 wt % to 95.5 wt % Ag, from 0.5 to 3 wt % Ge and the remainder, apart from incidental ingredients (if any), impurities and grain refiner, copper, the grain refiner being sodium borohydride or another boron hydride. Silicon-containing casting grain that gives rise to bright as-cast products is also disclosed. In a further embodiment, a zinc-containing silver alloy resistant to tarnish under severe conditions e.g. exposure to human sweat or French dressing comprises 1-5 wt % Zn, 0.7-3 wt % Cu, 0.1-3 wt % Ge, 0-0.3 wt % Mn, 0-0.25 wt % Si, B in an amount effective for grain refinement, up to 0.5 wt % incidental ingredients, the balance being Ag in an amount of 92.5-96 wt %, and impurities. A preferred manufacturing method giving an alloy with favourable physical properties involves melting together the ingredients, and incorporating boron by dispersing into molten silver alloy to foirn the whole or a precursor pait of said alloy a compound selecting fiom alkyl boron compounds, boron hydrides, boron halides, boron-containing metal hydrides, boron-containing metal halides and mixtures thereof The alloy is particularly suitable for castings which may be hardened in an oven e.g. at about 300 DEG C. for 30-45 min.