Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate

Abstract

A circuit substrate of the present invention uses as component materials for gate lines and gate electrodes, silver alloy material containing silver as a main component, and at least one element selected from the group consisting of tin, zinc, lead, bismuth, indium, and gallium. It is especially preferable that the silver alloy material mainly consisting of silver and containing indium is used for the gate lines and the gate electrodes. With this, it is possible to provide silver alloy material whose resistance value, adhesion, plasma resistance, and reflection characteristics can be appropriately adjusted by the adjustment of the content of indium. Further, it is also possible to apply the alloy in accordance with the characteristic required for each part of the circuit substrate.

Description

[0001] This Nonprovisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 200806 / 2003 filed in Japan on Jul. 23, 2003, Patent Application No. 200815 / 2003 filed in Japan on Jul. 23, 2003, Patent Application No. 185228 / 2004 filed in Japan on Jun. 23, 2004, and Patent Application No. 185264 / 2004 filed in Japan on Jun. 23, 2004, the entire contents of which are hereby incorporated by reference. FIELD OF THE INVENTION [0002] The present invention relates to a silver alloy material. The present invention relates in particular to a silver alloy material which composes lines and / or electrodes on a circuit substrate that uses an insulation substrate; a circuit substrate whose lines and / or electrodes are formed using either the above-mentioned material or fluid material such as silver alloy fluid; a method for manufacturing the circuit substrate; and an electronic device using the circuit substrate, such as a display device, a liquid crystal display device, and...

AI Technical Summary

Benefits of technology

[0023] The present invention has an objective to provide a silver alloy material that can realize a material having heat resistance and strong adhesion to a glass substrate as well as high plasma resistance and good light reflectance. The present invention also has an ob

Problems solved by technology

Accordingly, a huge cost of equipment is required in the manufacturing of TFT array substrates in response to recent demands for TFT array substrates having larger size.

However, the usable range of silver is limited because of the properties of silver.

Silver significantly lacks heat resistance.

If silver is formed into a film on a glass substrate using an evaporation method, a sputtering method, or other methods, for example, the silver film generates grain growth and clouded surface when baked at about 250° C. Further, silver has weak adhesion to the glass substrate.

Therefore silver cannot be directly used as a material for forming the lines on TFT array substrates.

Further, conventional silver has low heat resistance, and the reflectance of the silver is remarkably lowered after the silver is baked at 200° C., for example.

Hence, conventional silver cannot be used if heat resistance is required during the manufacturing process.

For example, it has been difficult to use silver as a material for a light reflecting film provided on a TFT array substrate in a reflection type liquid crystal display device, for example.

However, it is difficult for one type of material

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