Metallic carbide/adamantine (MeC/DLC) nanometer multi-layer film material and method for preparing the same

A metal carbide and nano-multilayer technology, which is applied in the direction of metal material coating process, coating, layered products, etc., can solve the problems of large internal stress, insufficient smooth and delicate surface of the film layer, fast deposition rate, etc., and achieve improved Interface binding force, energy controllable range, and the effect of improving micro-roughness

Active Publication Date: 2007-12-05
GUANGDONG INST OF NEW MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The DLC film prepared by cathodic arc ion plating (graphite source) has high hardness and fast deposition rate, but the surface of the film is

Method used

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  • Metallic carbide/adamantine (MeC/DLC) nanometer multi-layer film material and method for preparing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Double Ti targets are used, and the gas is high-purity Ar and N 2 and CH 4 , the substrate is Cr12MoV die steel.

[0021] Operate sequentially according to the technological process and parameters listed in Table 1. The thicknesses of the transition layer Ti / TiN / TiCN deposited by magnetron sputtering were 0.2, 0.4, and 0.3 μm, respectively; the thickness of the TiC monolayer film deposited by magnetron sputtering and ion beam alternately was 1 nm, and the thickness of the DLC monolayer film was 3 nm. The film thickness of the layer was 3.0 μm. The total thickness of the film layer is 3.9 μm, the hardness value is HV2500, the film / substrate bonding force is 60N, and the friction coefficient of the film layer is 0.12.

[0022] Table 1 Embodiment 1 specific process flow table

[0023]

Embodiment 2

[0025] Double Cr targets are used, and the gas is high-purity Ar and N 2 and C 2 h 2 , the base material is Ti6Al4V titanium alloy.

[0026] Operate sequentially according to the technological process and parameters listed in Table 2. The transition layer Cr / CrN / CrCN was deposited by magnetron sputtering, with a thickness of 0.1, 0.3, and 0.3 μm respectively; the multilayer CrC / DLC was deposited alternately by magnetron sputtering and ion beam, and the thickness of deposited CrC single layer was 1nm, DLC The thickness of the monolayer film is 2 nm, and the thickness of the multilayer film is 2.4 μm. The total thickness of the film layer is 3.1 μm, the hardness value is HV2700, the film / substrate bonding force is 80N, and the friction coefficient of the film layer is 0.1.

[0027] Table 2 Embodiment 2 specific process flow table

[0028]

Embodiment 3

[0030] Cr and W targets are used, and the gas is high-purity Ar and N 2 and C 2 h 2 , the substrate is YT5 cemented carbide.

[0031] Operate sequentially according to the technological process and parameters listed in Table 3. The transition layer Cr / CrN / CrCN was deposited by magnetron sputtering, with a thickness of 0.2, 0.3, and 0.3 μm, respectively; the multilayer film WC / DLC was deposited alternately by magnetron sputtering and ion beam, and the thickness of the deposited WC single layer was 1.5nm. DLC monolayer film thickness is 3nm, multilayer film thickness is 2.7μm. The total thickness of the film layer is 3.5 μm, the hardness value is HV4300, the film / substrate bonding force is 65N, and the friction coefficient of the film layer is 0.12.

[0032] Table 3 Embodiment 3 specific technological process table

[0033]

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Abstract

The present invention is nanometer multilayer metal carbide/diamond-like film material and its preparation process. The nanometer multilayer film material includes one base material layer, one transition layer and one nanometer multilayer film layer arranged successively. The transition layer consists of one metal layer, one metal nitride layer and one metal carbonitride layer; and the nanometer multilayer film layer consists of metal carbide layers and diamond-like film layers arranged alternately. The preparation process includes: bombarding with Ti, Cr, and Zr or W targets successively to clean the base material; depositing one metal layer, one metal nitride layer and one metal carbonitride layer successively; and depositing metal carbide layers and diamond-like film layers alternately. The nanometer multilayer film material has high micro hardness, low friction coefficient and high adhesion, and may be applied in improving the surface performance of metal parts.

Description

technical field [0001] The invention relates to a multilayer film material and a preparation method thereof, in particular to a metal carbide / diamond-like carbon (MeC / DLC) multilayer film material and a preparation method thereof. Background technique [0002] With the advancement of science and technology and the requirements of production development, nano new materials and surface engineering technology have been widely used in manufacturing. Since the 1980s, the use of vapor deposition technology to prepare TiN, TiCN, TiAlN and other high-hardness and wear-resistant coatings on the surface of tools, molds and parts can greatly improve their performance and life, and has been successfully commercially applied. However, these single-layer coatings still have disadvantages such as insufficient hardness and high friction coefficient (0.4-0.8), and cannot meet the high requirements of tools, molds and parts in some application fields. [0003] Diamond-like Carbon (DLC for sh...

Claims

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Application Information

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IPC IPC(8): B32B33/00C23C14/06C23C14/02C23C14/35C23C14/48
CPCC23C28/322C23C28/34C23C28/343C23C28/42C23C28/341
Inventor 林松盛代明江李洪武朱霞高侯惠君林凯生
Owner GUANGDONG INST OF NEW MATERIALS
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