439 results about "Mn alloy" patented technology

A spin-torque oscillator (STO) has increased magnetic damping of the oscillating free ferromagnetic layer. The Gilbert magnetic damping parameter (α) is at least 0.05, and preferably greater than 0.05. The free layer may be a any type of conventional ferromagnetic material, but contains one or more damping elements as a dopant. The damping element is selected from the group consisting of Pt, Pd and the 15 lanthanide elements. The free layer damping may also be increased by a damping layer adjacent the free layer. One type of damping layer may be an antiferromagnetic material, like a Mn alloy. As a modification to the antiferromagnetic damping layer, a bilayer damping layer may be formed of the antiferromagnetic layer and a nonmagnetic metal electrically conductive separation layer between the free layer and the antiferromagnetic layer. Another type of damping layer may be one formed of one or more of the elements selected from Pt, Pd and the lanthanides.

The antiferromagnetic layer 4 is formed of the X-Mn alloy (X is an platinum group element) and the interface structure of with the pinned magnetic layer 3 is made to be non-coherent by properly adjusting the composition ratio of X. Consequently, the crystal structure of the antiferromagnetic layer 4 is transformed so as to obtain a large exchange anisotropic magnetic field by subjecting the layer to a heat treatment, making it possible to improve the reproduction characteristic over the conventional art.

Proposed is a Cu—Mn alloy sputtering target, wherein the Mn content is 0.05 to 20 wt %, the total amount of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce is 500 wtppm or less, and the remainder is Cu and unavoidable impurities. Specifically, provided are a copper alloy wiring for semiconductor application, a sputtering target for forming this wiring, and a manufacturing method of a copper alloy wiring for semiconductor application. The copper alloy wiring itself for semiconductor application is equipped with a self-diffusion suppression function for effectively preventing the contamination around the wiring caused by the diffusion of active Cu, improving electromigration (EM) resistance, corrosion resistance and the like, enabling and facilitating the arbitrary formation of a barrier layer, and simplifying the deposition process of the copper alloy wiring for semiconductor application.

The invention discloses a novel high-elasticity Cu-Ni-Mn alloy which comprises the following components in percent by weight: 15-20 percent of Ni, 15-20 percent of Mn, 0.1 percent of Ti, 0.5-1 percent of Al, 0.05 percent of P, 0-0.1 percent of Re and the balance of Cu, wherein the weight percent sum of all the components is 100 percent. The invention also discloses a preparation method of the high-elasticity Cu-Ni-Mn alloy, which is simpler, is capable of reducing the preparation cost of the alloy, and solves the problems of a mass of pores and defects and the like inside a cast ingot becausethe Cu-Ni-Mn alloy is extremely easy to absorb gas during smelting and casting, and a key problem that the cast ingot is easy to crack during the rolling to cause the subsequent processing not to be favorably carried out. The alloy is suitable for making various elastic elements, contact springs, switches, contacts and the like in industries of instruments, electrical appliances and the like.

A magnetic head assembly includes: a magnetic recording head, a head slider, a suspension and an actuator arm. The magnetic recording head includes a spin torque oscillator and a main magnetic pole. The spin torque oscillator includes, a first magnetic layer including at least one selected from the group consisting of a Fe—Co—Al alloy, a Fe—Co—Si alloy, a Fe—Co—Ge alloy, a Fe—Co—Mn alloy a Fe—Co—Cr alloy and a Fe—Co—B alloy, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The main magnetic pole is placed together with the spin torque oscillator. The magnetic recording head is mounted on the head slider. The head slider is mounted on one end of the suspension. The actuator arm is connected to other end of the suspension.

The present invention provides a multilayer circuit board that includes a plurality of resin layers, conductive wiring layers, and via-hole conductors. Each of the resin layers includes a resin sheet containing a resin and a conductive wiring layer disposed on at least one surface of the resin sheet. The via-hole conductors contain an intermetallic compound having a melting point of 300° C. or more produced by a reaction between a first metal composed of Sn or an alloy containing 70% by weight or more Sn and a second metal composed of a Cu—Ni alloy or a Cu—Mn alloy. The second metal has a higher melting point than the first metal.

A solder alloy comprises Sn, Ag, Cu, and Mn and has a melting temperature of about 211 degrees C. A solder joint and solder process embody the solder alloy as well as solder balls and solder paste made therefrom to provide a solidified joint that includes three different intermetallic phases and a Sn metal phase. An exemplary Sn—Ag—Cu—Mn alloy consists essentially of about 3 to about 4 weight % Ag, about 0.80 to about 1.0 weight % Cu, and about 0.05 to about 0.15 weight % Mn, and balance consisting essentially of Sn.

The AL-Mg-Mn alloy complex intensified by Er, Zr relates to the technical domain of the metal alloy, concretely, it belongs to the aluminum alloy with the microalloy process. The invention aims to solve the problem of seeking the element used in the aluminum microalloy process, the element can intensify the aluminum alloy group to improve the ability of the aluminum alloy. The AL-Mg-Mn alloy complex intensified by Er, Zr characterized in that the lanthanide Er accounting for the 0.01%-0.6% of the gross weight of the final outcome and the transitional element Zr accounting for the 0.01-0.2% of the gross weight of the final outcome are added into the A1-4.5% Mg-0.7% alloy. Because of adding the minim lanthanide Er and the transitional element Zr, the machine capability of the A1-4.5% Mg-0.7% aluminum during the cold rolling state and the anneal of the room temperature can be improved highly, the resisting draw intension and the bending intension of the alloy can be improved 15-17%, the extending rate keeps even. At the same time, the A1-4.5%Mg-0.7%Mn alloy after the process of the microalloy has the higher high temperature capability, it can be used for the resisting hot aluminum alloy under the 200 temperature.

The invention relates to high-damping and high-strength Mg-Cu-Mn-Zn-Y alloy and a manufacturing method thereof. The high-damping and high-strength Mg-Cu-Mn-Zn-Y alloy is characterized by comprising the following alloying element components distributed in the alloy and the content value thereof in percent by weight: 1.0%-4.0% of Cu, 0.3%-1.5% of Mn, 0.3%-4.0% of Y, 1.0%-5.5% of Zn and the balance of magnesium. In order to solve the conflict of the damping property and the mechanical property of the magnesium alloy, the invention puts forward the fact that a Zn element and a Y element are added in the high-damping Mg-Cu-Mn alloy so that the Mg, the Zn and the Y form quasicrystals and / or long-prepared phases in the alloy, the quasicrystals or the long-prepared phases can introduce a great amount of new movable dislocations in a magnesium matrix, the damping property of the magnesium alloy is improved through movable dislocations newly increased in the magnesium matrix, and then the conventional heat extrusion is carried out on the alloy so that the mechanical property of the alloy is improved. The invention has the advantages of simple process, strong transportability, easy operation and lower cost and solves the problem that the Mg alloy has limited application due to high damping property and low mechanical property, and the used equipment is conventional and general equipment.

Mn alloy materials for magnetic materials contain 500 ppm or less, preferably 100 ppm or less, oxygen, 100 ppm or less, probably 20 ppm or less, sulfur, and preferably a total of 1000 ppm or less, more preferably 500 ppm or less, impurities (elements other than Mn and the alloying component). The alloying component that forms an alloy with Mn is one or two or more elements selected from the group consisting of Fe, Ir, Pt, pd, Rh, Ru, Ni, Cr and Co. Sputtering targets formed from the Mn alloy materials for use in depositing magnetic thin film, and the thin films so produced.

Disclosed is a process for producing an Al—Mn alloy sheet with improved liquid film migration resistance when used as core alloy in brazing sheet, including the steps of: casting an ingot having a composition comprising (in weight percent): 0.5<Mn≦1.7, 0.06<Cu≦1.5, Si≦1.3, Mg≦0.25, Ti<0.2, Zn≦2.0, Fe≦0.5, at least one element of the group of elements of 0.05<Zr≦0.25 and 0.05<Cr≦0.25; other elements<0.05 each and total<0.20, balance Al; homogenisation and preheat; hot rolling; cold rolling (including intermediate anneals whenever required), and wherein the homogenisation temperature is at least 450° C. for a duration of at least 1 hour followed by an air cooling at a rate of at least 20° C. / h and wherein the pre-heat temperature is at least 400° C. for at least 0.5 hour.

The invention provides an Al-Mg-Si-Cu-Mn alloy including the following chemical composition by mass: 0.50-0.75% of Si, 0.85-1.00% of Mg, 0.08-0.18% of Mn, 0.48-0.63% of Cu, 0.003-0.012% of Ti, no morethan 0.1% of Fe, no more than 0.15% of impurities and the balance Al. The mass ratio of the Mg element to the Si element is that Mg / Si = 1.15-1.60. The alloy has the advantages of high tensile strength, high yield strength, excellent anodizing performance and attractive surface, and solves the problems of easy wear and deformation under pressure caused by moderate strength of the 6061 aluminum alloy for portable electronic equipment.

The invention provides a preparing method for three-dimensional nanometer porous graphene. The preparing method includes the following steps that Cu-Mn alloy foil is prepared; dealloying treatment is carried out, and nanometer porous copper foil is obtained; the three-dimensional nanometer porous graphene is prepared, wherein the temperature rises to 200 DEG C to 400 DEG C in argon and hydrogen atmosphere, acetylene is introduced to grow hydrogenated graphite, the furnace temperature rises to 500 DEG C to 1,100 DEG C in hydrogen atmosphere, a quartz boat is rapidly moved to a temperature constant region in the middle of a reaction pipe to be roasted after the furnace temperature rises to the assigned temperature, the sample is cooled to the indoor temperature in hydrogen atmosphere after roasting is completed, the sample is immersed into corrosive fluid to remove nanometer porous copper, and a self-supporting three-dimensional nanometer porous graphene film is obtained after washing. According to the preparing method, the technological process is simple, cost is low, the pore sizes of the obtained three-dimensional nanometer porous graphene are even in distribution and are all in the nanometer level, and the obtained three-dimensional nanometer porous graphene is suitable for industrial production.

A method for fabricating a semiconductor device has forming an opening defined by an inner wall surface in an insulation film, covering said inner wall surface with a Cu—Mn alloy layer, depositing a first Cu layer over said Cu—Mn alloy layer without exposing said Cu—Mn alloy layer to the air, depositing a second Cu layer over said first Cu layer and filling said opening with said second Cu layer, and forming a barrier layer over said inner wall surface as a result of a reaction between Mn in said Cu—Mn alloy layer and said insulation film.

The invention discloses a multielement-reinforced heat-resistant magnesium alloy and a manufacturing method thereof. The multielement-reinforced heat-resistant magnesium alloy is prepared from the following raw materials in parts by weight: 1000 parts of magnesium, 65-85 parts of aluminum, 5-8 parts of zinc, 10-30 parts of yttrium, 1.5-5 parts of manganese, 5-15 parts of neodymium, 3-4 parts of cerium, 1-4 parts of calcium, 0.4-1 part of strontium, 0.1-0.5 part of silicon, 3-6 parts of silver and 10-40 parts of boron carbide. The manufacturing method comprises the following steps: carrying out acid washing, drying and preoxidation on the boron carbide, preheating the materials, smelting the magnesium and aluminum while introducing protective gas, adding an aluminum-manganese alloy and a pure zinc ingot to carry out alloying, adding an aluminum-silver alloy, a magnesium-silicon alloy, a magnesium-yttrium alloy, a magnesium-cerium alloy, a magnesium-neodymium alloy, a magnesium-calcium alloy and a magnesium-strontium alloy, smelting, adding the boron carbide particles for reinforcement, carrying out gas refinement on the melt by using argon, carrying out extrusion casting, and finally, carrying out solid solution aging treatment to obtain the heat-resistant magnesium alloy finished product. The magnesium alloy has excellent comprehensive properties under high-temperature conditions.

The invention discloses an Al-Mg-Si-Cu-Mn-Er alloy material and a preparation method thereof. The alloy material is characterized by containing rare earth Er of which the mass percentage is 0.15%-0.45%. According to the alloy material and the preparation method disclosed by the invention, since rare earth Er of which the mass percentage is 0.15%-0.45% is added into the Al-Mg-Si-Cu-Mn alloy material, the contents of other alloying elements are reasonably designed, and a reasonable melting process and rapid solidification technology are adopted and repeated rolling and a suitable heat treatment are carried out, and thus the Al-Mg-Si-Cu-Mn-Er alloy material with uniform and fine microstructure is prepared; the obtained material has the advantages of relatively high plasticity and strength, tensile strength not less than 388MPa and elongation not less than 24%.

A liquid crystal display device including, a pair of substrates, a gate electrode of a thin film transistor (TFT) formed on one of the substrates, and a wiring layer connected to the gate electrode or an electrode of the thin film transistor, wherein at least a part of the gate electrode or a part the wiring layer is formed by a layer structured by a pure copper layer and a Cu—Mn alloy layer including Mn, wherein a concentration of Mn in the Cu—Mn alloy layer is more than 0.1 and not more than 20 atomic percentage within a solubility limit of Mn in the copper, and wherein a boundary surface between the Cu—Mn alloy layer and said one of the substrate includes an oxide layer having a Mn oxide layer.

The medium temperature silver base brazing filler metal consists of: Ag 29.5-30.5 wt%, Zn 31.5-32.5 wt%, Mn 2.5-3.5 wt%, Sn 2.5-3.5 wt%, P 0.4-0.8 wt% and La 0.2-0.4 wt% except Cu. The preparation process includes the following steps: selecting material, material throwing and smelting, casting, extrusion and drawing. During the step of material throwing and smelting, electrolytic copper and P-Cu alloy are first heated quickly inside furnace for complete melting, covering agent is added, Zn, Cu-Mn alloy are added successively, Ag and Sn-La are added after lowering the temperature, and the temperature is finally raised to 1050-1100 deg.c while stirring before tapping. The product has the features of no harmful elements contained, relatively low cost, short production process, stable quality and raised extrusion and drawing finished product rate.

The present invention belongs to the field of welding technology, and is applied mainly in the dot and bead welding for coal milling roller, mill roller and boiler pipeline. The self-protecting dot and bead welding wire has a metal core comprising high carbon ferrochromium 40-60 wt%, ferromolybdenum 5-15 wt%, Si-Mn alloy 5-15 wt%, ferrotitanium 2-5 wt%, Al-Mg alloy 2-5 wt%, ferroboron 2-5 wt%, except Fe powder. The self-protecting dot and bead welding wire has low cost, and may be used in automatic operation to form high quality welded point.

The ultra-low carbon steel protecting slag for continuous casting consists of carbon material 0.5-1.6 wt%, metal smelting speed regulator 2-8 wt%, MgO 2-7 wt%, Na2O 6-12 wt%, F- 2-8 wt%, Al2O3 2-7 wt%, MnO 3-8 wt%, Fe2O3 1-3 wt%, except CaO and SiO2, where the weight ratio CaO / SiO2 is 0.75-1.05. The metal smelting speed regulator is one of Ca-Si alloy, Ca-Ba-Si alloy, Mn-Si alloy and Fe-Mn alloy or any composition of them. The ultra low carbon steel protecting slag is used for continuous casting, and has synergistic metallurgical functions and no carburization of the continuous cast billet.

The invention provides a high performance aluminum alloy composite foil for a heat exchanger and a producing method thereof. An Al-Mn alloy of a core layer is coated with an Al-Si alloy on one side or both sides. The composite foil adopts the processes of: the Al-Si alloy and the Al-Mn alloy are respectively cast into ingot with the Al-Si alloy ingot hot-rolled after homogenizing treatment while the Al-Mn alloy ingot is face-milled after homogenizing treatment, then an Al-Si alloy hot rolled plate and the Al-Mn alloy ingot are paired and welded after surface treatment; the acquired covering slab is heated at a temperature of between 460 and 520 DEG C for hot rolling compounding for 4 to 9 hours, and the temperature of finishing rolling is controlled at a temperature of between 270 and 320 DEG C; and a hot rolling compounding plate goes on cold rough rolling and cold finish rolling after intermediate annealing at a temperature between 300 and 430 DEG C for 1 to 3 hours with deformation amount ranging from 30 percent to 70 percent, then a usage-state product in O and H24 treatment state is obtained through final annealing. The aluminum alloy composite foil has the advantages of excellent tensile strength, yield strength, elongation and sag resistance, appearing to be the ideal material in manufacturing components of the heat exchanger.

The invention provides a preparing method for three-dimensional nanometer porous graphene. The preparing method includes the following steps that Cu-Mn alloy foil is prepared; dealloying treatment is carried out, and nanometer porous copper foil is obtained; the three-dimensional nanometer porous graphene is prepared, wherein the temperature rises to 200 DEG C to 400 DEG C in argon and hydrogen atmosphere, acetylene is introduced to grow hydrogenated graphite, the furnace temperature rises to 500 DEG C to 1,100 DEG C in hydrogen atmosphere, a quartz boat is rapidly moved to a temperature constant region in the middle of a reaction pipe to be roasted after the furnace temperature rises to the assigned temperature, the sample is cooled to the indoor temperature in hydrogen atmosphere after roasting is completed, the sample is immersed into corrosive fluid to remove nanometer porous copper, and a self-supporting three-dimensional nanometer porous graphene film is obtained after washing. According to the preparing method, the technological process is simple, cost is low, the pore sizes of the obtained three-dimensional nanometer porous graphene are even in distribution and are all in the nanometer level, and the obtained three-dimensional nanometer porous graphene is suitable for industrial production.

An Al / Cu / Mg / Mn alloy for the production of semi-finished products with high static and dynamic strength properties has the following composition: 0.3-0.7 wt % silicon (Si), max. 0.15 wt. % iron (Fe), 3.5-4.5 wt % copper (Cu), 0.1-0.5 wt. % manganese (Mn), 0.3-0.8 wt. % magnesium (Mg), 0.5-0.15 wt % titanium (Ti), 0.1-0.25 wt % zirconium (Zr), 0.3-0.7 wt. % silver (Ag), max. 0.05 wt. % others individually, max 0.15 wt. % others globally, the remaining wt. % aluminum (Al). The invention further relates to a semi-finished product made for such an alloy and a method of production of a semi-finished product made for such an alloy.

An anticorrosion white Cu-Mn alloy contains Mn (9-15 wt.%), Zn (4-15 wt.%), Al (0.5-1.5 wt.%), Sn (0-1.5 wt.%) rare-earth element (less than 0.2 wt.%), and Cu (the rest). Said alloy can be used to make wire material through non-vacuum smelting, horizontal conticasting and cold drawing or cold rolling. Its advantages are high machinability and anticorrosion nature and stable lustre. It can replace Ni-contained white Zn-Cu alloy.

A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors.

The invention provides a flux-cored wire used for low-alloy chrome molybdenum heat-resistant steel. The flux-cored wire comprises a low-carbon steel sheath and a flux core which is stuffed in the low-carbon steel sheath. The flux core comprises the following components in percentage by mass: 30-35% of natural rutile, 2-5% of magnesium oxide, 1.5-3% of barium carbonate, 2-3% of elpasolite, 2-5% of potassium titanate, 15-20% of a silicomanganese alloy, 8-10% of chromium, 3.5-5% of ferromolybdenum, 1-2% of ferro-aluminum, 0.5-2.5% of roasted aluminum oxide, 0.5-1% of nickel powder, 0.5-1.5% of magnetite and the balance of iron powder and inevitable impurities. The flux-cored wire has the advantages that deposited metal composition completely accords with stipulation of related national standards, and the all-position welding requirement of the 1-1.25%Cr-0.5%Mo heat-resistant steel can be met; meanwhile, the mechanical performance indexes of deposited metal completely accord with stipulation of related national standards; impact property of the deposited metal is excellent, and specially, low-temperature impact toughness (minus 30 DEG C) is stabilized at more than 50J; and an impact value is stable.