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61 results about "Self-diffusion" patented technology

According to IUPAC definition, self-diffusion coefficient is the diffusion coefficient of species when the chemical potential gradient equals zero. Here, is the activity of the species in the solution and is the concentration of . This term is commonly assumed to be equal to the tracer diffusion determined by watching the movement of an isotope in the material of interest.

Exhaust processing method and apparatus for safety dumping of fuel cell automobile hydrogen gas

The invention discloses a tail gas buffer dilution treatment method for safe emission of hydrogen from a fuel cell vehicle and a device thereof. The device comprises a hydrogen buffer, a flow control valve, a draining valve, a flame arrester, an earth terminal, an emergency hydrogen exhaust valve, a hydrogen sensor and a control module. The pulse hydrogen emitted from an anode side of the fuel cell is firstly buffered by the buffer, and a small stream of air introduced from an air path emitted from the cathode side dilutes and sweeps the hydrogen in the buffer; then the diluted hydrogen emitted from the buffer and the gas from a main air pipeline are mixed, thus the volume concentration of the tail hydrogen emitted from the fuel cell vehicle is controlled below the explosion limit concentration 4%, and the purified water discharged from a condenser can be recycled. The tail gas buffer dilution treatment device utilizes the techniques of self-diffusion, multi-tube pass buffer, air mixing and exchange, expansion, condensation and the like to buffer and dilute the hydrogen-containing tail gas emitted from the fuel cell vehicle and separate the water and gas in the hydrogen-containing tail gas, thus eliminating the possible fire hazard and ensuring the safe running of the fuel cell vehicle.
Owner:TONGJI UNIV

Determination method of thermal-deformation microstructure evolution mechanisms and thermal machining performance of C-Mn-Al high-strength steel

InactiveCN108595827AJudgment evolution mechanismJudgment of workabilityGeometric CADDesign optimisation/simulationSelf-diffusionMachining process
The invention belongs to the technical field of high-strength steel machining engineering, and particularly relates to a determination method of thermal-deformation microstructure evolution mechanismsand thermal machining performance of C-Mn-Al high-strength steel. According to the method, firstly, a high-temperature compression test is carried out on the novel C-Mn-Al high-strength steel, and true stress-true strain curve data of the steel are obtained; then a rheology stress prediction model of the steel is established, model selection is based on creep theory, a class of constitutive models which are of relationships of Young's modulus and a self-diffusion coefficient of austenite and temperature and have physics bases are considered, and the established constitutive model can accurately predict rheology stress of the steel; a thermal-deformation machining graph of the steel is established, and microstructures are combined to determine the microstructure evolution mechanisms of different regions in the machining graph. The constitutive model of thermal deformation and the machining graph are combined, the thermal-deformation rheology stress and thermal-deformation power dissipation efficiency under arbitrary deformation conditions are analyzed, thus the corresponding microstructure evolution mechanisms and thermal machining performance information are obtained, and resultshave great significance for thermal machining process control of the high-strength steel.
Owner:ANHUI UNIVERSITY OF TECHNOLOGY

Method for preparing organic ammonium metal halide film

The invention discloses a method for preparing an organic ammonium metal halide film. A half-closed type carrier gas free hot wall type low-pressure chemical vapor deposition method process is adopted to prepare the organic ammonium metal halide film. The method comprises the following steps: firstly, preparing a metal halide (MX2) film on a quartz substrate by using a dry method or a wet method, and transferring the metal halide (MX2) film into a glass tube for annealing, wherein one end of the glass tube is sealed and the other end is grounded; secondly, transferring the energy to organic ammonium (AX) powder inside the glass tube through a hot wall, forming steam blocks through self-diffusion of AX steam in low vacuum, performing chemical reaction on MX2 with a hot substrate to generate the film which is uniform in thickness, good in appearance, high in light absorption rate and smooth in surface, and performing in-situ annealing so as to generate the AMX3 film which is dense in structure and high in crystallinity degree. The method has the advantages that in-situ annealing can be performed in the film formation process, continuous vacuuming is not needed, the preparation time is shortened, the energy consumption is reduced, the filming efficiency is high, the charge capture trap in the film is reduced, and the carrier mobility is increased.
Owner:TIANJIN UNIVERSITY OF TECHNOLOGY

Method for preparing silicon epitaxial wafer for step recovery diode

The invention discloses a method for preparing a silicon epitaxial wafer for a step recovery diode. According to the preparation method, the problem in the conventional silicon epitaxial wafer process for the step recovery diode that the width of a transition area cannot be controlled is solved. A two-section growth manner is adopted in the epitaxial layer growth process, purging is performed for a period of time by using hydrogen with repeatedly changeable flow, impurities are continuously diluted and discharged out of a reaction chamber of an epitaxial furnace, and the first section of the epitaxial layer grows at a low temperature and a low speed, so that the gas phase self-doping influence is reduced, the structure of the transition area is improved, and then purging is performed for a period of time again by using the hydrogen with the repeatedly changeable flow, the second section of the epitaxial layer rapidly grows at a high temperature, and finally, the target thickness and electrical resistivity are achieved. Due to the optimized epitaxial process, control of substrate impurity self-diffusion factors under a normal pressure is realized, and the width of the transition area is narrowed, so that the width accounts for 13-15% of the thickness percentage of the epitaxial layer, and the use requirement of the step recovery diode is met.
Owner:CHINA ELECTRONICS TECH GRP NO 46 RES INST

Self-diffusion gradient functional compound cutting tool material and preparation method thereof

ActiveCN103949647AIncreased microhardnessStrong resistance to crack growthMetal layered productsSelf-diffusionSurface layer
The invention relates to a self-diffusion gradient functional compound cutting tool material and a preparation method thereof. The preparation method comprises the following steps: grinding ultrafine Ti(C5N5) powder, ultrafine WC powder, nanometer Ni powder and nanometer Mo powder into matrix compound powder; grinding TiB2-TiC eutectic powder, Al2O3 powder, ultrafine VC powder and nanometer Ni powder into surface compound powder; weighting little surface compound powder, pouring into a graphite jig and compacting; weighting the matrix compound powder, putting onto the compacted surface compound powder, and then compacting; weighting a little surface compound powder, putting onto the compacted matrix compound powder, and then compacting; putting into a vacuum high-temperature sintering furnace, directly heating and slowly pressurizing and sintering. According to the invention, the self-diffusion gradient functional compound cutting tool material with excellent compatibility and interface bonding of interlayer components is prepared through diffusion and sintering. The self-diffusion gradient functional compound cutting tool material has the characteristics of hard and wear-resisting surface, tough subsurface stratum, surface layer peeling prevention, strong whole body and breaking resistance.
Owner:上海艾梯夫机械科技有限公司

Preparation method of bonding alloy wire

The invention discloses a preparation method of a bonding alloy wire. The preparation method comprises the following steps that: (1) 99.995% silver is purchased, and the 99.995% silver is made into a silver sheet; (2) intermediate alloy is made; (3) vertical melting is performed; (4) wire drawing is performed; (5) intermediate annealing is performed; (6) wire drawing is performed again; (7) annealing is performed; (8) winding is performed; and (9) vacuum packaging is performed. According to the preparation method of the invention, when wire drawing is performed to obtain a wire rod of 70 to 100 microns, and an intermediate annealing process is additionally adopted to eliminate stress, so that wire drawing is smoother, and wire fracture can be better avoided; after a finished wire is annealed, surface treatment is performed on the finished wire, and therefore, a bonding effect of self-diffusion of the bonding alloy wire can be effectively avoided, and the yield of the finished product can be improved; surface residues of the alloy wire can be effectively reduced, and the quality of the product is improved. According to the preparation method of the invention, an ultrasonic cleaning system is utilized to effectively clean lubricating fluid on the surface of the alloy wire, and therefore, surface residues on the surface of the alloy wire can be effectively reduced, and the quality of the product can be improved.
Owner:深圳金斯达应用材料有限公司

Flocculating and dehydrating method for treating waste slurry in process for preparing polyaluminum chloride by aluminium ash method

The invention discloses a flocculating and dehydrating method for treating waste slurry in a process for preparing polyaluminum chloride by an aluminium ash method. The method comprises the following steps: firstly Zeta potential of the waste slurry in the process for preparing polyaluminum chloride is adjusted by using an anionic surfactant sodium alkyl sulfate; a polyaluminum chloride solution is separated, rest waste slurry is precipitated, the solid content of the waste slurry is adjusted, cation-type polyacrylamide is added, cation-type polyacrylamide is dispersed based on self-diffusion and stirring, and flocculation and dehydration are carried out; finally, after flocculation and dehydration, the waste slurry is filtered, in order to realize solid-liquid separation. The solid content of the waste slurry is improved from 60.0%-62.5% from 50.0-55.0%, slurry with high acid solution content is converted into loose blocks, the treated waste slurry can be directly transported, in order to facilitate disposal and recycling. In addition, the volume of the waste slurry is reduced by about 21% by the flocculating and dehydrating method, and 20-30% of the volume of the polyaluminum chloride solution is recycled. The Zeta potential of the waste slurry is adjusted for realizing flocculating and dehydrating effects, and the method has theoretical significance and practical value in industrial production process.
Owner:NANJING UNIV OF SCI & TECH

Lateral epitaxial technique based longitudinal structure AlGaN/GaN HEMT device and manufacture method thereof

The invention discloses a lateral epitaxial technique based longitudinal structure AlGaN / GaN HEMT device and a manufacture method thereof. The device comprises a substrate, a current blocking layer and an epitaxial layer, wherein the current blocking layer is formed on the substrate; the epitaxial layer laterally epitaxially grows on the current blocking layer; a current conducting through hole is formed in the current blocking layer. According to the invention, the current blocking layer acts as an insulation layer, so that the problems that the two-dimensional electron gas concentration, self-diffusion, high electricity leakage and the like are caused by ion implantation damage due to Mg doping, barrier height improvement by Mg ion implantation and formation of a similar insulation layer by Al ion implantation in a traditional technology can be solved; meanwhile, the defects of high cost, long time consumption, technology complexity and the like due to secondary epitaxial growth are also prevented; in addition, a clearance region formed by incomplete healing is isolated via F ion implantation, so that the clearance region is not involved in the device structure, and the problems of electric leakage and the like caused by the clearance region are relieved effectively.
Owner:SUZHOU NENGWU ELECTRONICS TECH

Water surface self-diffusion floating granules and preparation method thereof

The invention discloses a water surface self-diffusion type floating granule and a preparation method thereof, belonging to the field of pesticide processing. Component composition: pesticide active ingredient 0.5-70%, buoyancy aid 0.5-60%, water surface extender 0.2-30%, dispersant 0.05-10%, wetting agent 0.1-5%, disintegrant 5-20% , filling supplement. Preparation method: 1) Grind the pesticide active ingredients into water suspension or oil suspension; 2) Mix the buoyancy aid, water surface extender, dispersant, wetting agent, disintegrant and filler evenly, and then grind it with 1) The slurry is mixed evenly, and a certain amount of water is added for kneading and granulation. The preparation method of the present invention is wet sand milling, and there is no dust in the preparation process; the prepared particles have a small particle size after being disintegrated in water, and can form a more continuous film; adding a diffusing agent with excellent performance makes the particles diffuse automatically on the water surface , Diffusion distance and speed and disintegration speed can be adjusted, particles can automatically avoid obstacles when they encounter obstacles, and will not gather around obstacles to cause phytotoxicity; it is an ideal self-diffusion floating granule preparation.
Owner:YANGZHOU SPED CHEM

Self diffusion spreading oil on water surfaces and preparation method thereof

InactiveCN106212447ASolve the problem of not being easily dissolved by solventsCreate pollutionBiocideAnimal repellantsSelf-diffusionWear particle
The invention concretely discloses self diffusion spreading oil on water surfaces and a preparation method thereof. The spreading oil comprises the following components in percentages by weight: 10-60% of a pesticide active component, 1-5% of a dispersant, 0.5-5%of a wetting agent, 1-3% of a suspending agent, 5-30% of a water surface spreading agent, and the balance being a filling material. The spreading oil is prepared by production technology which comprises the following steps: the pesticide active component, the dispersant, the wetting agent, the suspending agent, the water surface spreading agent and the filling material are added into a high shear emulsifying machine; after the components are mixed by the high shear emulsifying machine, the mixture is milled in a sand milling machine until particle size reaches 2-5 [mu]m to obtain the spreading oil. The water surface spreading agent with excellent performance is added in the preparation process of the spreading oil; the spreading oil can automatically diffuse on the water surface, the diffusion distance can be adjusted by an auxiliary agent, the diffusion speed can be adjusted too, and the spreading oil can automatically avoid barriers when facing barriers; a layer of film is formed on a water surface, and the film can diffuse along the water surface; a wet method is used in the preparation method, so that a problem that original drugs are not easy to dissolve in solvents is solved, polar solvents are not used, surrounding environments are not polluted, and preparation cost is low.
Owner:YANGZHOU SPED CHEM

Method and device for preparing strontium carbonate crystals through self-diffusion at room temperature

The invention relates to a method and a device for preparing strontium carbonate crystals through self-diffusion at room temperature. According to the method, with strontium dichloride hexahydrate andammonium hydrogen carbonate as reactants and glycine as a biomimetic control agent, granular strontium carbonate crystals are prepared; the method comprises the following specific steps: in a reaction device, adding a first batch of the strontium dichloride hexahydrate and the ammonium hydrogen carbonate, then adding 0.020% of a glycine solution, reacting for 24h by standing at room temperature,supplementing a second batch of the reactants and a third batch of the reactants, respectively continuing reacting for 24h by standing, filtering a reaction product, washing for three times by using distilled water, and drying for 1h at 105 DEG C to obtain the granular strontium carbonate crystals with the grain diameter of 110-440nm, wherein the product purity is higher than or equal to 99% and the yield is 96-98%. The reaction device consists of a reactor 1 (5), a reactor 2 (9) and a reactor 3 (13). The method and the device have the advantages of high preparation efficiency, simple and convenient operation, high technological stability, low energy consumption, low production cost and the like.
Owner:NANCHANG HANGKONG UNIVERSITY
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