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Implementation method for preparing thin film through atomic layer deposition technology

A technology of atomic layer deposition and realization method, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of waste, increase process cost, increase the precision requirements of pressure control system, etc., and achieve the reduction of process cost , Improve the utilization rate and increase the effect of effective diffusion time

Inactive Publication Date: 2016-05-11
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the above-mentioned existing ALD process also has some disadvantages at the same time. First, it increases the precision requirements of the pressure control system, thereby increasing the production cost of the equipment; in addition, due to the continuous flow of the reaction source gas, a large number of reaction sources are blocked Carried directly out of the reaction chamber, resulting in waste, and also increased the process cost to a certain extent

Method used

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  • Implementation method for preparing thin film through atomic layer deposition technology
  • Implementation method for preparing thin film through atomic layer deposition technology
  • Implementation method for preparing thin film through atomic layer deposition technology

Examples

Experimental program
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Effect test

Embodiment 1

[0081] Use the four-stage ALD process for 200 cycles to prepare an aluminum oxide film with a target thickness of 20nm. The ALD process parameters are: process temperature 180°C, and the pressure when the reaction originates from diffusion is maintained between 80Pa-200Pa through the adjustment of the valve system. The ALD process cycle is 14s in total (TMA is passed for 2s, nitrogen is purged for 5s, ozone is passed for 2s, and nitrogen is purged for 5s). As shown in the block diagram below:

[0082]

Embodiment 2

[0084] Use the five-stage ALD process for 200 cycles to prepare an aluminum oxide film with a target thickness of 20nm. The ALD process parameters are: process temperature 200°C, and the pressure when the reaction originates from diffusion is maintained between 1-2 Torr through the adjustment of the valve system. The ALD process cycle is 14s in total (TMA 1s, nitrogen dilution 1s, nitrogen purge 5s, ozone 2s, nitrogen purge 5s). As shown in the block diagram below:

[0085]

Embodiment 3

[0087] A six-stage ALD process is used for 200 cycles to prepare an aluminum oxide film with a target thickness of 20nm. The ALD process parameters are: process temperature 180°C, and the pressure when the reaction originates from diffusion is maintained between 1-2 Torr through the adjustment of the valve system. The ALD process cycle is 14s in total (TMA 1s, nitrogen dilution 1s, nitrogen purge 5s, ozone 1s, nitrogen dilution 1s, nitrogen purge 5s). As shown in the block diagram below:

[0088]

[0089] In summary, the present invention proposes a self-diffusion ALD technology, which utilizes the opening and closing of the outlet valve of the reaction chamber to control the diffusion of the reaction source in the reaction chamber, and reduces the The opening of the gas outlet valve or close it to increase the pressure in the reaction chamber, thereby increasing the effective diffusion time of the reaction source, and promote the diffusion of the reaction source by introdu...

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Abstract

The invention discloses an implementation method for preparing a thin film through an atomic layer deposition technology. A self-diffusion type ALD technology is provided, and opening and closing of a gas outlet valve of a reaction chamber are used for controlling diffusion of reaction sources in the reaction chamber; through the manner that the reaction sources are led in during the technological process, opening of the gas outlet valve is reduced or the gas outlet valve is closed, and therefore pressure inside the reaction chamber is increased, and the effective diffusion time of the reaction source is prolonged; diluent gas is added in the technology circulating process to promote diffusion of the reaction sources, on one hand, the utilization rate of the reaction sources can be improved, and the technology cost is reduced; and on the other hand, the requirement for a pressure control system of the reaction chamber can be reduced, and therefore the equipment cost can be reduced. Meanwhile, due to the fact that diffusion of the reaction sources in the reaction chamber is longer, uniformity of a prepared thin film can be further improved.

Description

technical field [0001] The invention relates to the technical field of atomic layer deposition, and more specifically, to a method for preparing thin films by self-diffusion atomic layer deposition technology. Background technique [0002] Atomic layer deposition (Atomic layer deposition, ALD) is a method (technology) of forming a deposited film by alternately passing gaseous precursors into the reactor and chemically reacting on the surface of the substrate. The form is plated on the surface of the substrate layer by layer. [0003] During the atomic layer deposition process, when the precursor reaches the surface of the deposition substrate, it will be deposited on the surface of the substrate in the form of chemical adsorption. The reactor needs to be purged with an inert gas between different precursor pulses to remove excess reaction sources (precursors) that are not adsorbed on the surface of the substrate, ensuring that chemical reactions only occur on the surface of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45527
Inventor 李春雷李东旗何金正
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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