The embodiment of the invention belongs to the field of semiconductors, and discloses a method and
system for reducing warping change increment of a
wafer. The method comprises the following steps: acquiring real-
time pressure, real-time gas flow and real-time temperature of each preset
control area in each furnace tube, acquiring property data of a
wafer needing to be subjected to thermal process treatment, and inputting the data into a preset warping prediction model to obtain a warping prediction value of the
wafer; and if the warping prediction value exceeds a preset warping threshold value, outputting a pressure adjustment value, a gas flow adjustment value and a temperature adjustment value of each preset
control area in each furnace tube through a preset warping prediction model, and respectively sending the pressure adjustment value, the gas flow adjustment value and the temperature adjustment value to a
pressure control system, a gas flow control valve and a
temperature control system of each preset
control area in each furnace tube. According to the scheme, the precision of the wafer thermal
processing process can be improved, and the condition of warping and deterioration of the wafer is improved, so that the
rejection rate is reduced, the material waste is reduced, and the consistency and stability of a
production line are realized.