144results about How to "Reduce hydrogen concentration" patented technology

A semiconductor element having high mobility, which includes an oxide semiconductor layer having crystallinity, is provided. The oxide semiconductor layer includes a stacked-layer structure of a first oxide semiconductor film and a second oxide semiconductor film having a wider band gap than the first oxide semiconductor film, which is in contact with the first oxide semiconductor film. Thus, a channel region is formed in part of the first oxide semiconductor film (that is, in an oxide semiconductor film having a smaller band gap) which is in the vicinity of an interface with the second oxide semiconductor film. Further, dangling bonds in the first oxide semiconductor film and the second oxide semiconductor film are bonded to each other at the interface therebetween. Accordingly, a decrease in mobility resulting from an electron trap or the like due to dangling bonds can be reduced in the channel region.

A process for producing a purified carboxylic acid having “n+1” carbon atoms comprises feeding a carboxylic acid stream containing a carboxylic acid having “n+1” carbon atoms, a hydrogen halide, a lower boiling point (bp) component, a higher bp component, and others to a first distillation column; separating a lower bp fraction containing part of the lower bp component and a higher bp fraction containing part of the higher bp component in the first column; withdrawing a side stream containing at least the carboxylic acid by side cut from the first column; feeding the side stream to a second distillation column; separating a lower bp fraction containing part of the lower bp component and a higher bp fraction containing part of the higher bp component in the second column; and withdrawing a side stream containing the carboxylic acid by side cut from the second column to recover a purified carboxylic acid; and the process further comprises feeding at least one first component (A) selected from the group consisting of an alcohol, corresponding to the carboxylic acid, having “n” carbon atom(s), and an ester of the alcohol with the carboxylic acid to the first column, and if necessary water. Such a process ensures reduction of the concentration of the hydrogen halide in the purified carboxylic acid.

In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5x1019 (atoms / cm3) or lower. Thus, leakage current of the transistor can be reduced. As a result, in the logic circuit, reduction in standby power and suppression of malfunction can be achieved.

To form a polycrystalline silicon film having a grain size of 1 μm or greater by means of laser annealing. A beam emitted from a laser apparatus (101) is split in two by a half mirror. The split beams are processed into linear shapes by cylindrical lenses (102) to (105), and (207), then simultaneously irradiate an irradiation surface (209). If an amorphous silicon film formed on a glass substrate is disposed on the irradiation surface (209), an area will be irradiated by both a linear shape beam entering from a front surface and a linear shape beam that has transmitted through the glass surface. Both linear shape beams irradiate the same area to thereby crystallize the amorphous silicon film.

Electrical characteristics of transistors using an oxide semiconductor are greatly varied in a substrate, between substrates, and between lots, and the electrical characteristics are changed due to heat, bias, light, or the like in some cases. In view of the above, a semiconductor device using an oxide semiconductor with high reliability and small variation in electrical characteristics is manufactured. In a method for manufacturing a semiconductor device, hydrogen in a film and at an interface between films is removed in a transistor using an oxide semiconductor. In order to remove hydrogen at the interface between the films, the substrate is transferred under a vacuum between film formations. Further, as for a substrate having a surface exposed to the air, hydrogen on the surface of the substrate may be removed by heat treatment or plasma treatment.

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor.

A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms / cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; reducing a concentration of hydrogen at least at the implantation surface of the donor semiconductor wafer using ozonated water; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; and separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface.

In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

A conventional composition of carbon nitride has a deposition method and properties limited. In the case of using the composition of carbon nitride as a protective film, for example, a material of an object to be coated (goods) is required to satisfy with a condition in disagreement with a temperature during forming the composition of carbon nitride. Besides, in the case of using the composition of carbon nitride as an insulating film in a semiconductor device, low stress relaxation and low coverage for a step are produced since the insulating film has a low hydrogen concentration. Consequently, a composition including carbon nitride according to the present invention is formed at a deposition temperature that enables to include hydrogen in the composition at 30 to 45 atomic %, for example, at temperatures of 100° C. or less, preferably 50° C. or less, more preferably from 20° C. to 30° C., with stability and adhesiveness kept.

A semiconductor device having excellent electric characteristics and a method for manufacturing the semiconductor device are provided. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode; forming a gate insulating film to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a hydrogen permeable film over the oxide semiconductor film; forming a hydrogen capture film over the hydrogen permeable film; performing heat treatment to release hydrogen from the oxide semiconductor film; forming a source electrode and a drain electrode to be in contact with a part of the oxide semiconductor film; and removing an exposed portion of the hydrogen capture film to form a channel protective film formed of the hydrogen permeable film. A semiconductor device manufactured by the above method is also provided.

A fuel cell discharge-gas processing device that dilutes anode off-gas discharged from a fuel cell anode by mixing the anode off-gas with a diluent gas so as to produce a diluted gas and then discharges mixture of the anode off-gas and the diluent gas, includes: a dilution container; an anode off-gas introduction path; a diluent gas path through; a diluent gas emission hole; a mixed gas discharge hole; at least one partition panel; and a communication gas path, wherein the anode off-gas emission hole is provided so as to emit anode off-gas toward the partition panel.

A manufacturing method and a semiconductor device produced by the method are provided, in which the semiconductor device can easily be manufactured while the hydrogen concentration is decreased. An N-containing InGaAs layer 3 is grown on an InP substrate by the MBE method, and thereafter a heat treatment is provided at a temperature in the range of 600° C. or more and less than 800° C., whereby the average hydrogen concentration of the N-containing InGaAs layer 3 is made equal to or 2×1017 / cm3 or less than.

On a transparent substrate where a gate electrode is formed, an amorphous silicon film is deposited by plasma CVD with a gate insulating film interposed therebetween. The silicon film is heated in a nitrogen atmosphere at 430±20° C. for an hour or longer to discharge hydrogen remaining in the film when it is formed. The silicon film is then melted by laser irradiation to crystallize, to thereby form a polycrystalline silicon film serving as an active region. Thus, when amorphous silicon is crystallized to form a polycrystalline silicon film, it is made possible to prevent creation of a rough film surface and penetration of impurity ions in the atmosphere into the polycrystalline silicon.

There have been cases where transistors using oxide semiconductors are inferior in reliability to transistors using amorphous silicon. There have also been cases where transistors using oxide semiconductors show great variation in electrical characteristics within one substrate, from substrate to substrate, or from lot to lot. Therefore, an object is to manufacture a semiconductor device using an oxide semiconductor which has high reliability and less variation in electrical characteristics. Provided is a film formation apparatus including a load lock chamber, a transfer chamber connected to the load lock chamber through a gate valve, a substrate heating chamber connected to the transfer chamber through a gate valve, and a film formation chamber having a leakage rate less than or equal to 1×10−10 Pa·m3 / sec, which is connected to the transfer chamber through a gate valve.

A fuel cell system including: a fuel cell supplied with a fuel gas to a fuel electrode thereof and air to an air electrode thereof; a fuel gas supplying device which supplies the fuel gas to the fuel electrode; an air supplying device which supplies air to the air electrode; a fuel gas pressure regulator which regulates fuel gas pressure at the fuel electrode; a purge valve which discharges exhaust fuel gas from the fuel electrode to the outside; and a controller. The controller continues power generation of the fuel cell, controlling the fuel gas pressure regulator to lower the fuel gas pressure at the fuel electrode, having the air supplying device continuing supplying air to the air electrode with the purge valve closed; and after the fuel gas pressure at the fuel electrode becomes equal to or lower than the atmospheric pressure, stops power generation of the fuel cell.

There is disclosed a fuel cell system or the like capable of sufficiently reducing an exhaust hydrogen concentration even in a case where a fuel cell is operated in a state of a low power generation efficiency. A bypass valve is arranged between an oxidation gas supply path and a cathode-off gas channel. In a state in which supply of an oxidation gas to a cathode falls short, pumping hydrogen is included in a cathode-off gas. Therefore, a valve open degree of the bypass valve is regulated, and a flow rate of bypass air is regulated to control the exhaust hydrogen concentration.

Provided: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle.

A fuel cell system including: a fuel cell including a fuel gas channel and an oxidant gas channel, which is configured to generate electricity using a fuel gas and an oxidant gas; a diluting unit configured to dilute gas discharged from the fuel gas channel by mixing the discharged gas with a dilution gas which is supplied from an oxidant gas supply unit and passed through and discharged from the fuel cell, and to exhaust the diluted gas to outside; a purge valve configured to purge gas in the fuel gas channel to the diluting unit; a scavenging unit configured to scavenge the fuel gas channel and the oxidant gas channel; and a dilution assist unit configured to supply a dilution assist gas to the diluting unit through an assist passage connected to the diluting unit to assist dilution in the diluting unit, during scavenging by the scavenging unit.

The invention discloses an experimental device for research on hydrogen combustion in a nuclear power plant containment shell. The experimental device comprises a safety tank, an experimental pipe section, a gas supply system, an exhaust system, a heating and heat preservation system, a spray system, a data acquisition system, a control system, an igniter and a high-speed camera. The experimental pipe section is installed inside the safety tank. A barrier which is easy to replace is arranged inside the experimental pipe section. Through the gas supply system, hydrogen, the air and water vapor are uniformly mixed in advance; and then, the safety tank or the experimental pipe section is filled with the gas mixture for a combustion experiment. The exhaust system is used for discharging exhaust gas in the experimental device. The heating and heat preservation system can control initial gas temperature. The spray system provides a spray water environment for the experimental device. The data acquisition system acquires and processes a sensor signal to obtain experimental data. Through the control system, each subsystem and equipment of the experimental device are monitored and controlled. The experimental device of the invention has advantages of high safety and multiple experimental functions, etc., and can be used for research on combustion characteristics of hydrogen in the nuclear power plant containment shell.

Consumed hydrogen-off gas is discharged from a fuel cell via a hydrogen-off gas exhaust flow passage. Consumed oxygen-off gas is discharged from the fuel cell via an oxygen-off gas exhaust flow passage. The oxygen-off gas flowing through the oxygen-off gas exhaust flow passage and the hydrogen-off gas flowing through the hydrogen-off gas exhaust flow passage are mixed and diluted in a mixing portion. The gases mixed in the mixing portion flow into a combustor via a gas-liquid separator. The combustor, which includes a platinum catalyst, causes hydrogen contained in the mixed gases to react with oxygen by combustion and further reduces the concentration of hydrogen contained in the mixed gases. The mixed gases whose concentration of hydrogen has been reduced by the combustor is discharged to the atmosphere.

Glass-based articles that include a hydrogen-containing layer extending from the surface of the article to a depth of layer. The hydrogen-containing layer includes a hydrogen concentration that decreases from a maximum hydrogen concentration to the depth of layer. The glass-based articles exhibit a high Vickers indentation cracking threshold. Glass compositions that are selected to promote the formation of the hydrogen-containing layer and methods of forming the glass-based article are also provided.

A method of manufacturing a semiconductor device includes forming a layer containing a predetermined element on a substrate by supplying a source gas containing the predetermined element into a process vessel and exhausting the source gas from the process vessel to cause a chemical vapor deposition (CVD) reaction. A nitrogen-containing gas is supplied into the process vessel and then exhausted, changing the layer containing the predetermined element into a nitride layer. This process is repeated to form a nitride film on the substrate. The process vessel is purged by supplying an inert gas into the process vessel and exhausting the inert gas from the process vessel between forming the layer containing the predetermined element and changing the layer containing the predetermined element into the nitride layer.

Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.

An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.

The invention relates to a fuel cell system and a control method thereof. The system comprises a galvanic pile, a hydrogen loop, an air loop, a cooling loop, a control module and an environment monitoring module, the hydrogen loop, the air loop and the cooling loop are all connected with the galvanic pile, and the control module receives information of each loop and the environment monitoring module, and regulates and controls each loop through calculation; the air loop comprises an air inlet pipeline, an air compressor, a cathode flow control module, a humidifier, a throttle valve and an exhaust pipeline, the air inlet pipeline, the air compressor, the humidifier and the inlet end of the galvanic pile are sequentially connected through pipelines, and the outlet end of the galvanic pile issequentially communicated with the humidifier, the throttle valve and the exhaust pipeline. And the cooling loop comprises a second pressure controller, a heater, a multi-module heat dissipation module and a flow control module. The defects in a common fuel cell are overcome, and the adaptive capacity of the system for different environments is improved.

Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.

A stacked photovoltaic device which includes a first photovoltaic unit having an amorphous silicon layer 8 as a photoelectric conversion layer, and a second photovoltaic unit having a microcrystalline silicon layer 5 as a photo-electric conversion layer and succeeding backwardly from the first photovoltaic unit closer to a light incidence plane. The microcrystalline silicon layer 5 serving as the photoelectric conversion layer in the second photovoltaic unit has a ratio α2(=I(Si—O) / I(Si—H)) greater than a ratio α1(=I(Si—O) / I(Si—H)) of the amorphous silicon layer 8 serving as the photoelectric conversion layer in the first photovoltaic unit, where I(Si—O) is a peak area for the Si—O stretching mode of each silicon layer and I(Si—H) is a peak area for the Si—H stretching mode of each silicon layer when the amorphous and microcrystalline silicon layers 8 and 5 are measured by infrared absorption spectroscopy. Also, a short-circuit current Isc2 of the second photovoltaic unit is greater than a short-circuit current Isc1 of the first photovoltaic unit.