304results about How to "Improve film thickness uniformity" patented technology

Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.

An apparatus for depositing thin film on a processing target includes: a reaction space; a susceptor movable up and down and rotatable around its center axis; and isolation walls that divide the reaction space into multiple compartments including source gas compartments and purge gas compartments, wherein when the susceptor is raised for film deposition, a small gap is created between the susceptor and the isolation walls, thereby establishing gaseous separation between the respective compartments, wherein each source gas compartment and each purge gas compartment are provided alternately in a susceptor-rotating direction of the susceptor.

To provide an antireflection film which is easily and inexpensively producible and which has an antireflection property, a scratch resistance and a stain resistance in a sufficient level, and a polarizing plate and a liquid crystal display device utilizing the antireflection film of such excellent ability, the antireflection film includs a transparent support and a low-refractive index layer having a lower refractive index than the transparent support, wherein the low-refractive index layer is an outermost layer, and the low-refractive index layer contains a hollow silica particle and a compound that reduces a surface free energy of the outermost layer.

A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH₄) derivatives having the molecular formula SiRR¹R²R³, disiloxane derivatives having the molecular formula R⁴R⁵R⁶—Si—O—Si—R⁷R⁸R⁹, and trisiloxane derivatives having the molecular formula R¹⁰R¹¹R¹²—Si—O—Si—R¹³R¹⁴—O—Si—R¹⁵R¹⁶R¹⁷ where R and R^1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.

Scanning localized evaporation and deposition of an evaporant on a substrate utilizes a mask assembly comprised of a series of mask elements with openings thereon and spaced apart in a stack. The openings are aligned so as to direct the evaporant therethrough onto the substrate. The mask elements are heated and the stack may include a movable shutter element to block openings in adjacent mask elements. The evaporant streams are usually vertical but some may be oblique to the substrate, and they may be of different materials.

A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The described methods use process variation and electrical impact to direct the insertion of dummy fill into an integrated circuit.

A surface capacitive touch panel includes a transparent substrate, a decorative layer, a metal trace pattern layer, and a passivation layer. The decorative layer and the capacitive sensing electrode layer are formed on the transparent substrate. The metal trace pattern layer is formed on the capacitive sensing electrode layer. The decorative layer is disposed at a position substantially overlapping the metal trace pattern layer.

The present invention is concerned with a plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus (170) has a plating tank (186) for holding a plating solution (188), a holder (160) for holding a workpiece (W) and bringing a surface to be plated of the workpiece into contact with the plating solution (188) in the plating tank (186), and a ring-shaped nozzle pipe (220) disposed in the plating tank (186) and having a plurality of plating solution injection nozzles (222) for injecting the plating solution (188) to the surface to be plated of the workpiece held by the holder (160) to supply the plating solution (188) into the plating tank (186).

The present invention provides a color film substrate, a manufacturing method thereof, and an OLED display device. The color film substrate is provided with a first black matrix (12) and a second black matrix (14) to block light together, and the risk of color mixing of display can be reduced. A first groove (121) of the first black matrix (12) and a second groove (131) of a dam layer (13) are setto contain and limit printing ink needed for the manufacture of a color-resist layer (15) together, the surface of the first groove (121) is hydrophilic, the surface of the second groove (131) is hydrophobic, the flatness and thickness uniformity of the color-resist layer 15 can be improved, the color film substrate is applied to the OLED display device, and the display quality can be improved. The dam layer (13) and the second black matrix (14) are set to substitute support posts in the prior art, and the process can be simplified.

Disclosed is a tie coat which is formed on a surface of a base or an undercoating film prior to formation of an organopolysiloxane-based antifouling coating film and is formed from a moisture-curing organopolysiloxane-based composition comprising (b1) organopolysiloxane having condensing functional groups at both ends of a molecule and/or (b2) a curing composition formed by subjecting the component (b1) and an extender pigment selected from the group consisting of silica, calcium carbonate, talc, mica, clay, kaolin and barium sulfate to contact treatment with heating or without heating. Also disclosed is a composite coating film wherein on a surface of the above tie coat is formed a finish coat formed from a three-pack type organopolysiloxane-based curing composition comprising (c1) a main agent comprising the component (b1), (c2) a curing agent component comprising tetraalkoxysilicate or its condensate and (c3) a curing accelerator component comprising a metallic compound. Further disclosed is a composite coating film wherein an epoxy-based sealer coat, the tie coat and the finish coat are formed in this order on a surface of an old antifouling coating film (G). There is provided by the invention a tie coat capable of forming a composite coating film having excellent interlaminar bond property. The composite coating film is favorably formed on a surface of a base, an undercoating film, an old antifouling coating film or the like, has excellent interlaminar bond strength and antifouling property and is preferably used for coating outer surfaces of ships, submerged parts of marine structures, water supply/drainage channels of atomic power plant, etc.

The present invention is a film forming unit for discharging a coating solution from a coating solution discharge nozzle toward a substrate to form a layer on a surface of the substrate, which has a supply flow path for supplying a cleaning fluid to a discharge flow path continuing to a discharging port of the coating solution discharge nozzle. When the cleaning fluid is positively supplied directly to the discharge flow path of the coating solution discharge nozzle, the supply pressure of the cleaning fluid as well as the capability of cleaning is added. Therefore, further effective cleaning is attained in compare with the conventional case where a coating solution discharge nozzle is simply dipped into a cleaning fluid. In consequence, even when the discharging port of the nozzle is minute, it is possible to perfectly remove the contamination. This allows the discharge pressure to remain constant so as to form a uniform coating layer on the substrate.

The invention discloses a waveguide Bragg grating based on a SiO2 strip-loaded waveguide and a manufacturing method thereof. The waveguide Bragg grating comprises a substrate layer, a flat core layer, a guide core layer and an upper coating, wherein the flat core layer covers the front side of the substrate layer, the guide core layer is positioned on the front side of the flat core layer, and the upper coating covers the front side of the flat core layer and wraps the guide core layer. The waveguide Bragg grating has the advantages of simplicity in process, low cost, good consistency, large-scale production and the like; and compared with a manufacturing process of an outer ridge modulation type waveguide Bragg grating based on a ridge waveguide, the manufacturing method has the advantages that the process is simple, the cost is low, the size is small and the like.

A painting device, a painting method, and a display member provided by the device and the method. In the painting device and the painting method capable of suppressing discharge pulsation, providing thin-film coating having excellent film thick uniformity, and having excellent discharge responsiveness, a member (portion 5) damping the discharge pulsation is installed between a paint liquid supply means (for example, syringe pump 3) and a painting means (for example, die ferrule 6). The discharge pulsation generated by the syringe pump is damped by the volumetric change of the member (5a) damping the pulsation which is disposed in the pulsation damping portion (5), and a constant volume of discharge with suppressed pulsation can be provided from the die ferrule.

There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a compound having a protected carboxyl group, a compound having a group capable of reacting with a carboxyl group and a solvent, and an underlayer coating forming composition comprising a compound having a group capable of reacting with a carboxyl group and a protected carboxyl group and a solvent.

To provide a method for manufacturing a resist pattern designed to reduce a manufacturing cost by improving efficiency in the use of a resist material, a method for removing a resist pattern, and a method for manufacturing a semiconductor device.

The present invention includes a step of forming a resist pattern by discharging a composition containing photosensitizer on a object to be processed under reduced pressure. The present invention includes a step of etching the object to be processed using the resist pattern as a mask, a step of irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of a photosensitizer, and a step of removing the resist pattern on the object to be processed.

An epitaxial film deposition system includes a reactor, a susceptor, a wafer heating unit, a reactant gas supply orifice, and an aperture for venting the reactant gas. The reactant gas is supplied to a reactor region between the susceptor and a graphite plate so as to circulate in layered flow in a direction along the reactor inner wall in the planar direction of a mounted SiC wafer. The temperature of the wafer is controlled by a high frequency coil and halogen lamps based on temperatures detected by a pyrometer. By circulating the reactant gas over the surface of the stationary wafer, it is possible to form, under various process conditions, an SiC epitaxial film having good film quality and good uniformity of film thickness, without providing any wafer rotation mechanism.

The invention includes a hermetic container provided with a substrate mount; a vacuum exhauster connected to the hermetic container; a current member; and a current member raising and lowering mechanism. When the current member is raised and lowered as a function of the pressure inside the hermetic container, a liquid flow of the coating solution on the substrate is controlled, thereby controlling the uniformity of the film thickness of the coating solution.

The present invention provides an aligning agent for liquid crystal that can forming LCD aligning film with excellent LCD aligning and electrology and will not generate bubbles when coating substrate, good screening characteristics and excellent filmuniformity of coated film. The aligning agent includes (A) 100 weight parts at least one polymer chosen from substance groups of polyamic acid reacted by dianhydride and diamine, and acid imide polymers of the same, and (B) 0.01-100 weight parts specific epoxy radicals compounds represented by the following formula.