Composition for forming lower layer film for lithography comprising compound having protected carboxyl group

A composition and compound technology, applied in the direction of image communication, electrical components, etc., can solve problems such as storage stability, and achieve the effects of high filling, excellent storage stability and good precision
CN1830202AActive Publication Date: 2006-09-06NISSAN CHEM IND LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NISSAN CHEM IND LTD
Publication Date
2006-09-06

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Abstract

There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a compound having a protected carboxyl group, a compound having a group capable of reacting with a carboxyl group and a solvent, and an underlayer coating forming composition comprising a compound having a group capable of reacting with a carboxyl group and a protected carboxyl group and a solvent.
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Description

technical field

[0001] The present invention relates to a novel composition for forming an underlayer film for lithography, an underlayer film formed from the composition, and a method for forming a photoresist pattern using the underlayer film. In addition, the present invention relates to an underlayer film for lithography that can be used as a film for reducing the exposure of irradiated light from a substrate to a photoresist coated on a semiconductor substrate in a lithography process for manufacturing a semiconductor device. The anti-reflection film of the lower layer of reflection of the layer, the planarization film used to planarize the semiconductor substrate with unevenness, and the film that prevents the contamination of the photoresist layer by substances generated by the semiconductor substrate during heating and baking, etc., It also relates to an underlayer film-forming composition for forming the underlayer film and a method for forming the underlayer film. I...

Claims

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