Composition for forming lower layer film for lithography comprising compound having protected carboxyl group

A composition and compound technology, applied in the direction of image communication, electrical components, etc., can solve problems such as storage stability, and achieve the effects of high filling, excellent storage stability and good precision

Active Publication Date: 2006-09-06
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since such compositions contain strong acids such as sulfonic acid compounds, there is a problem in storage stability

Method used

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  • Composition for forming lower layer film for lithography comprising compound having protected carboxyl group
  • Composition for forming lower layer film for lithography comprising compound having protected carboxyl group
  • Composition for forming lower layer film for lithography comprising compound having protected carboxyl group

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0192]

[0193] Dissolve 10 g of formula (57) of 1-ethoxyethyl methacrylate (Honshu Chemical Industry Co., Ltd. product) and 9 g of glycidyl methacrylate in 76 g of propylene glycol monomethyl ether acetate, and add to the solution After flowing nitrogen gas for 30 minutes, the temperature was raised to 70°C. While maintaining the reaction solution at 70° C., 0.38 g of azobisisobutyronitrile and 0.38 g of 1-dodecanethiol were added. After stirring at 70° C. for 8 hours under a nitrogen atmosphere, 0.1 g of 4-methoxyphenol was added to obtain a solution containing a copolymer of 1-ethoxyethyl methacrylate and glycidyl methacrylate. GPC analysis of the obtained polymer revealed that the number average molecular weight Mn was 7600, and the weight average molecular weight (standard polystyrene correction) Mw was 23000.

Synthetic example 2

[0195] Dissolve 10 g of 1-ethoxyethyl methacrylate (manufactured by Honshu Chemical Industry Co., Ltd.) of formula (57), 9 g of glycidyl methacrylate, and 12.7 g of methyl methacrylate in 126.6 g of propylene glycol monomethyl In ether acetate, nitrogen gas was passed through the solution for 30 minutes, and then the temperature was raised to 70°C. While maintaining the reaction solution at 70° C., 0.63 g of azobisisobutyronitrile and 0.63 g of 1-dodecanethiol were added. Under a nitrogen atmosphere, after stirring at 70°C for 8 hours, 0.1 g of 4-methoxyphenol was added to obtain a compound containing 1-ethoxyethyl methacrylate, glycidyl methacrylate and methyl methacrylate. Copolymer solution. GPC analysis of the obtained polymer revealed that the number average molecular weight Mn was 5,500, and the weight average molecular weight (standard polystyrene correction) Mw was 12,000.

Synthetic example 3

[0197]

[0198] Dissolve 15 g of 1-cyclohexyloxyethyl methacrylate (manufactured by Honshu Chemical Industry Co., Ltd.) of formula (58) and 10 g of glycidyl methacrylate in 38.0 g of butyl acetate, and flow nitrogen into the solution After 30 minutes, the temperature was raised to 70°C. While maintaining the reaction solution at 70° C., 0.25 g of azobisisobutyronitrile and 0.25 g of 1-dodecanethiol were added. After stirring at 70° C. for 8 hours under a nitrogen atmosphere, 0.1 g of 4-methoxyphenol was added to obtain a solution containing a copolymer of 1-cyclohexyloxyethyl methacrylate and glycidyl methacrylate. GPC analysis of the obtained polymer revealed that the number average molecular weight Mn was 9,000, and the weight average molecular weight (standard polystyrene correction) Mw was 50,000.

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PUM

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Abstract

There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a compound having a protected carboxyl group, a compound having a group capable of reacting with a carboxyl group and a solvent, and an underlayer coating forming composition comprising a compound having a group capable of reacting with a carboxyl group and a protected carboxyl group and a solvent.

Description

technical field [0001] The present invention relates to a novel composition for forming an underlayer film for lithography, an underlayer film formed from the composition, and a method for forming a photoresist pattern using the underlayer film. In addition, the present invention relates to an underlayer film for lithography that can be used as a film for reducing the exposure of irradiated light from a substrate to a photoresist coated on a semiconductor substrate in a lithography process for manufacturing a semiconductor device. The anti-reflection film of the lower layer of reflection of the layer, the planarization film used to planarize the semiconductor substrate with unevenness, and the film that prevents the contamination of the photoresist layer by substances generated by the semiconductor substrate during heating and baking, etc., It also relates to an underlayer film-forming composition for forming the underlayer film and a method for forming the underlayer film. I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N1/38H04N1/387
Inventor 竹井敏岸冈高广境田康志新城彻也
Owner NISSAN CHEM IND LTD
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