673results about How to "Effective diffusion" patented technology

Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO₂) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.

To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.

Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO₂) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a graded transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces.

A lens diffusing light emitted from a light source includes a concave light-incident surface, a light guide portion, and a light-emitting surface. The light-incident surface includes a plane portion opposed to the light source and an optical function portion that is formed on the plane portion and one of scatters and diffuses the light. The light emitted from the light source enters the light-incident surface. The light that has entered the light-incident surface passes through the light guide portion. The light-emitting surface emits the light passed through the light guide portion.

The invention discloses a preparation method of a one-way wet conduction nano-fiber multilayer composite membrane with the wettability gradient. The method comprises the following steps that hydrophilic nano materials are dispersed in solvent, the nano materials are dispersed uniformly through ultrasound, a hydrophilic polymer is dissolved in the dispersing agent, a spinning solution A1 is obtained, and a hydrophilic nano-fiber membrane is deposited on a receiving base material through an electrostatic spinning method; hydrophilic nano materials are dispersed in solvent, the nano materials are dispersed uniformly through the ultrasound, a hydrophilic polymer is dissolved in the dispersing agent, and a spinning solution A2 is obtained; a hydrophobic polymer is dissolved in solvent, and a spinning solution B1 is obtained; the two spinning solutions are deposited on the hydrophilic nano-fiber membrane to form at least one diversion layer through the electrostatic spinning method; a hydrophobic polymer is dissolved in solvent, a spinning solution B2 is obtained, a hydrophobic nano-fiber membrane is deposited on the diversion layers through the electrostatic spinning method, and the one-way wet conduction nano-fiber multilayer composite membrane with the wettability gradient is obtained.

A film cooling structure 10 includes a structural wall 11 that has an outer surface 12 exposed to combustion gas and an inner surface 13 positioned opposite to the outer surface 12, and film cooling holes 14 are formed at the structural wall 11 and introduce cooling air from the inner surface 13 toward the outer surface 12 in order to perform film cooling. The film cooling hole 14 includes an introducing portion 14a that extends to a middle position in the structural wall 11 from the inner surface 13 toward the outer surface 12, an enlarged portion 14b of which the cross-sectional area is gradually increased toward the outer surface 12 from an end of an outer surface side of the introducing portion 14a and which is opened at the outer surface 12, and a partition portion 16 that partitions the inside of the enlarged portion 14b into a plurality of spaces in a width direction of the hole perpendicular to a flow direction of the combustion gas.

The bottom layer of invention uses aluminium baseboard; the intermediate layer is a heat conduction insulation layer; the surface layer is an electric conduction layer. It features the following: the heat insulation layer is a ceramic-like thin film layer with 10-400 micron thick and >=100Momega insulation resistance, which chemical composition is aluminium oxide. The preparation method comprises: making pretreatment, de-oiling and washing for the surface of the aluminium baseboard using mechanical method or chemical method to form a clean workpiece plane; using the microarc oxide treatment and the microplasma surface ceramic method to make a heat conduction insulation layer on the workpiece surface; finally, overlapping an electric conduction layer on the heat conduction insulation layer; etching circuit pattern.

Disclosed is a liquid crystal display (LCD) device in which low power LEDs with a dual lens structure re configured for application in a backlight device to increase the optical efficiency at low power, thus enhancing the brightness, such LCD device including: a lower cover; PCBs (Printed Circuit Boards) disposed on the lower cover for receiving power from the exterior; a main body mounted on the PCBs; R, G and B LED (Light Emitting Diode) devices disposed on the main body for emitting light; a first lens having a first curvature and mounted on the main body and housing the R, G and B LED devices; a second lens covering the outside of the first lens and having an inner curved surface with a second curvature having a varying radius of curvature, and an outer curved surface with a third curvature, wherein the second curvature of the inner curved surface is gradually increased from an edge portion toward a central portion; and a liquid crystal panel spaced apart from the second lens by a certain interval and to which light is provided.

An airbag inflator system and method of manufacture is disclosed which may be stored in a small area, is simple to fabricate, directs exhaust gas from a standardized inflator, sufficiently cools and diffuses the exhaust gas, and catches hot gas generant residue. The system includes an airbag inflator within a sleeve. Solid sections of the sleeve circumscribe the inflator and are positioned to divert exhaust gas leaving an exit port of the inflator. The configuration of the solid sections provides that the inflator need not be rotated during assembly to position exit ports below solid sections. The diverted exhaust gas unrolls the sleeve to form an exhaust passage. The gas passes through the exhaust passage and is dispersed by the permeable section before entering the textile airbag. In this way, a simple, effective diffusion system for curtain airbag inflators is provided.

A gate insulating film which is an oxide layer mainly made of SiO₂ is formed over a silicon carbide substrate by thermal oxidation, and then, a resultant structure is annealed in an inert gas atmosphere in a chamber. Thereafter, the silicon carbide-oxide layered structure is placed in a chamber which has a vacuum pump and exposed to a reduced pressure NO gas atmosphere at a high temperature higher than 1100° C. and lower than 1250° C., whereby nitrogen is diffused in the gate insulating film. As a result, a gate insulating film which is a V-group element containing oxide layer, the lower part of which includes a high nitrogen concentration region, and the relative dielectric constant of which is 3.0 or higher, is obtained. The interface state density of an interface region between the V-group element containing oxide layer and the silicon carbide layer decreases.

A composition comprising: at least one porous carbon monolith, such as a carbon aerogel, comprising internal pores, and at least one nanomaterial, such as carbon nanotubes, disposed uniformly throughout the internal pores. The nanomaterial can be disposed in the middle of the monolith. In addition, a method for making a monolithic solid with both high surface area and good bulk electrical conductivity is provided. A porous substrate having a thickness of 100 microns or more and comprising macropores throughout its thickness is prepared. At least one catalyst is deposited inside the porous substrate. Subsequently, chemical vapor deposition is used to uniformly deposit a nanomaterial in the macropores throughout the thickness of the porous substrate. Applications include electrical energy storage, such as batteries and capacitors, and hydrogen storage.

The invention relates to a digital image encryption method based on chaotic orbit perturbation and relates to the field of encryption systems. The method comprises the following steps of: scrambling a plaintext image by adopting a generalized discrete Baker mapping-based method; diffusing the scrambled image by adopting a Logistic mapping-based method, and changing the pixel value of each point in the image; and performing multiple encryption according to the requirement on encryption strength. According to the method, a key flow is related to a key and a plaintext by introducing a chaotic orbit perturbation mechanism related to the plaintext, so that the diffusing effects of an encryption system are effectively improved, and the known plaintext resistance is obviously improved. Certain pixel value is changed in the diffusion process depending on the cumulative effect of all the encrypted pixel values before the pixel, so that the tiny change of one pixel value can be effectively diffused to all the subsequent pixels in the image. The method has short encryption time.

A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the first oxide insulating film.

A rare earth sintered magnet as an anisotropic sintered body comprising Nd₂Fe₁₄B crystal phase as primary phase and having the composition R¹_aT_bM_cSi_dB_e wherein R¹ is a rare earth element inclusive of Sc and Y, T is Fe and/or Co, H is Al, Cu, Zn, In, P, S, Ti, V, Cr, Mn, Ni, Ga, Ge, Zr, Nb, Mo, Pd, Ag, Cd, Sn, Sb, Hf, Ta, or W, “a” to “e” are 12≦a≦17, 0≦c≦10, 0.3≦d≦7, 5≦e≦10, and the balance of b, wherein Dy and/or Tb is diffused into the sintered body from its surface.

The invention provides an image encryption method based on a Feistel network and dynamic DNA encoding. The method comprises the following steps: computing a Hash value of an original plaintext image by using a Keccak algorithm, and taking the Hash value as an initial value of a hyper-chaotic Chen system, generating a Hill encryption matrix by using a chaotic sequence generated by the hyper-chaoticChen system so as to replace pixels of an original image; realizing image pixel value diffusion by using the DNA encoding operation as a F function of the Feistel network, and a DNA sequence base asa key of the Feistel network; and performing further diffusion through ciphertext feedback. Through three turns of chaotic scrambling-DNA encoding-Feistel conversion-DNA decoding, the ciphertext randomness and attack resistance are stronger, the scrambling conversion of the image pixel location and the diffusion of the pixel value are realized, and the encryption turn is reduced due to repeated scrambling and DNA encoding and decoding. Through the image encryption method provided by the invention, the image can be effectively encrypted, the plaintext sensitivity is strong, the plaintext attack, the differential attack and the statistical attack can be effectively resisted

A backlight assembly includes a light source generating light and a first optical member diffusing the light. The first optical member includes a first diffusion member provided on an exit surface of the first optical member, from which the light exits, to diffuse the light. The first diffusion member includes a plurality of edges each having a curved shape and extending between the exit surface and a vertex of the first diffusion member. Accordingly, the light exiting through the exit surface is effectively diffused by the edges of the first diffusion member.

A diffuser plate with higher light diffusion efficiency and brightness applied to backlight module of Liquid Crystal Display TV (LCD TV) for providing uniform light is disclosed. An optical lens with a diffusion layer is disposed on one side of the substrate. The diffusion layer is arranged above the optical lens for enhancing diffusion effect. The other side of the diffuser plate can be a plane or having a lens structure. By Lenticular lens, the homogeneity of emitted light is improved so as to reduce the amount of diffusion particles being added into the diffusion plate Therefore, the light transmission is increased and the brightness is enhanced. Meanwhile, ability of shielding lamps is considered and Moiré effect is eliminated. Moreover, the diffusion layer is co-extruded on surface of the Lenticular lens together with the substrate so that the device is easy to be produced.

The invention provides a light-emitting device which is capable of applying light to a display panel with uniformity in brightness and can be made lower in profile. A light-emitting device (11) includes an LED chip (111a), a base support (111b) which supports the LED chip (111a), and a lens (112) disposed in contact with the LED chip (111a) so as to cover the LED chip (111a) and the base support (111b). The lens (112) has first curved sections (1122) which reflect light that has reached a top surface (112a) so that the reflected light is emitted from a side surface (112b), and second curved sections (1123) which refract light that has reached the top surface (112a) to outside so that the refracted light is emitted from the top surface (112a).

The invention discloses a nitrogen-doped porous carbon-coated metal nano composite catalyst and a preparation method thereof. The preparation method comprises the following steps: (1) adding a fluoride into an acidic solution for reaction, then adding M<n+1>AX<n>, carrying out magnetic stirring reaction under a water bath condition, cleaning a product with deionized water, centrifuging, then sequentially carrying out ultrasonic cleaning and centrifuging with an organic solvent and deionized water, and carrying out freeze drying so as to obtain a reactant 1; 2) weighing a certain amount of thereactant 1, adding deionized water and an organic solvent, carrying out uniform ultrasonic dispersion, dissolving a transition metal salt and urea in deionized water, adding an obtained mixture in anobtained mixed solution of the reactant 1, and carrying out magnetic stirring reaction under an oil bath condition to obtain a reactant 2; 3) performing heat treatment on the reactant 2 and a nitrogen-containing compound in a high-temperature furnace to obtain a reactant 3; and 4) performing high-temperature reduction on the reactant 3 in a protective atmosphere to obtain the nitrogen-doped porouscarbon-coated metal nano composite catalyst. According to the preparation method, the problems that the oxygen reduction catalyst prepared in the prior art is easy to agglomerate and the ORR activityis reduced due to less exposure of active sites are solved.