440results about How to "Avoid impurities" patented technology

To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.

After a mask is carried into a reserve room for temporarily storing before carrying into a mask room filled with specific gas that has an impurity concentration lower than a first concentration (e.g. 1 ppb) and that has a characteristic of absorbing little exposure light, gas-replacement mechanisms replace gas in the reserve room with specific gas having an oxygen concentration not lower than the first concentration. Therefore, when subsequently carrying the mask into the mask room, impurities from the outside (including absorbent gas) can be substantially prevented from getting into the optical path inside the mask room. When replacing a wafer, gas in a reserve room is also replaced in the same way as the above.

A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected workfunction. It is further disclosed how this, and further improvements for FET devices, such as raised source/drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.

A superhard composite material comprising a polycrystalline diamond cutter (PDC) having a cutting surface and cutting edges having a polycrystalline diamond thickness of about 3 mm is integrally formed with a sacrificial catalyst source that is removed later in the processing of the of the cutter.

An SOI (Silicon On Insulator) substrate is provided with: a support substrate (201); a single crystal silicon layer (202) disposed above one surface of the support substrate; an insulation portion (205) disposed between the support substrate and the single crystal silicon layer, the insulation portion comprising a single layer of an insulation film or a lamination structure of a plurality of insulation films, and including a silicon nitride film or a silicon nitride oxide film (204).

In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.

A discharge cell for use in an ozone generator is provided which can suppress a time-related reduction in ozone concentration without adding a catalytic gas such as nitrogen gas to oxygen gas as a raw material gas. The discharge cell includes a pair of electrodes disposed in an opposed spaced relation with a discharge space therebetween, and a dielectric layer of a three-layer structure consisting of three ceramic dielectric layers successively stacked on at least one of the electrodes, wherein a first dielectric layer of the dielectric layer contacting the one electrode contains no titanium dioxide, wherein a second dielectric layer of the dielectric layer exposed to the discharge space contains titanium dioxide in a metal element ratio of not lower than 10 wt %.

The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer; a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger; and a fourth step of separating the peeling layer and the layer to be peeled are performed. The use of the thin peeling layer can improve the yield of a peeling process regardless of the structure of the layer to be peeled.

A carrier is used to carry a liquid, and a high voltage is applied between a discharge end of the carrier and an opposed electrode to emit ionized liquid particles. The carrier has a liquid collecting end opposite to the discharge end to feed the steam of the liquid from a steam generator, condensing the liquid therearound, and feeding the condensed liquid to the discharge end. Accordingly, even when the liquid contains cations such as those of Ca and Mg, the steam of the liquid can extremely reduce the content of these impurities, avoiding the precipitation of the impurities at the discharge end of the carrier to assure stable electrostatic atomization.

It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

A liquid crystal display device includes a liquid crystal panel having first and second substrates attached to each other and separated by a spacer, a sealing unit for sealing the first and second substrates along a peripheral area of the liquid crystal panel, and a sealing pattern disposed within the sealing unit.

The invention provides a chemical method for synthesizing flaky CuxSy nanocrystalline optoelectronic film controllably at a low temperature. The method comprises the following steps: firstly adding sulfur powder in a container, secondly adding organic solvent N,N-dimethylformamide or absolute alcohol, wherein the volume of organic solvent is more than a half of the capacity of the container; standing at 0-60 DEG C for 1h to ensure that the sulfur powder dissolved in organic solvent is saturated, horizontally placing substrate material with a new and clean metal copper surface on the bottom of the container to avoid directly contacting with sulfur powder, reacting at 0-60 DEG C for 5-24h, cleaning the product with absolute alcohol, drying at room temperature to in-situ prepare the big area film material composed of flaky CuxSy nanocrystalline on the metal copper surface of the substrate material, wherein x:y=1-2. The method of the invention adopts low temperature, has low energy consumption, is simple, green and environmentally friendly and particularly applicable to large-area industrial production, and does not use any template, add any surfactant and perform complicated post-processing operations such as purification.