A method of manufacturing a group III-
nitride crystal substrate including the steps of introducing an alkali-
metal-element-containing substance, a group III-element-containing substance and a
nitrogen-element-containing substance into a reactor, forming a melt containing at least the
alkali metal element, the group III-element and the
nitrogen element in the reactor, and growing group III-
nitride crystal from the melt, and characterized by handling the alkali-
metal-element-containing substance in a
drying container in which
moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-
metal-element-containing substance into the reactor is provided. A group III-
nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride
semiconductor device can thus be provided.