Laser processing device (40) comprising: a clamping table (54) which holds a
wafer (10) having a front side (10a) and a back side (10b); a
laser beam application means (44) that applies a
laser beam to the
wafer (10) which is held by the clamping table (54); and a
processing feed means (43) that performs a relative
processing feed of the clamping table (54) and the application means (44) for a
laser beam, wherein the application means for a laser beam comprises a
laser oscillator (44b) which oscillates a
pulsed laser beam, and a focusing device (44a) which focuses the
pulsed laser beam oscillated by the
laser oscillator (44b) in order to apply the
pulsed laser beam to the
wafer (10) which is held by the clamping table (54), and The
pulsed laser beam, oscillated by the
laser oscillator (44b), includes burst pulses (BP), each of which has several subpulses that are gradually amplified stepwise from a lower energy to a
high energy, and the burst pulses (BP) are applied to the wafer (10) to form shielding tunnels (100), each containing a
small hole (102) and an
amorphous phase (104) surrounding the
small hole, wherein the application means (44) is configured for a laser beam to form a circular
small hole (102) and a circular
amorphous phase (104), each extending from the front side (10a) to the rear side (10b) of the wafer (10), wherein the focusing device (44a) is movable in the direction of the
optical axis and configured such that the focal point is positioned at a predetermined position in the wafer (10). is.