3823results about "Analysis by thermal excitation" patented technology

The present invention relates to an apparatus and method for forming a plasma in the exhaust line of a primary process reactor. The plasma is generated in an inductive source (5) to examine the chemical concentrations of the waste or exhaust gas in vacuum lines that are below atmospheric pressure. The optical radiation emitted by the plasma is analyzed by an optical spectrometer (9) and the resulting information is used to diagnose, monitor, or control operating states in the main vacuum vessel.

An apparatus and method are disclosed for monitoring and/or detecting concentrations of a chemical precursor in a reaction chamber. The apparatus and method have an advantage of operating in a high temperature environment. An optical emissions spectrometer (OES) is coupled to a gas source, such as a solid source vessel, in order to monitor or detect an output of the chemical precursor to the reaction chamber. Alternatively, a small sample of precursor can be periodically monitored flowing into the OES and into a vacuum pump, thus bypassing the reaction chamber.

A system and method of drilling and/or perforating uses a laser beam to remove material, such as to perforate the casing, cement and formation or drill a well bore. The system and method can further or alternately encompass material analysis that can be performed without removing the material from the well bore. The analysis can be performed apart from or in connection with drilling operations and/or perforating the casing, cement and formation. The analysis can be used in a feed back loop to adjust material removal, adjust material analysis, determine the location of future material removal, and for other uses.

The present invention relates to methods for amplifying nucleic acids in micro-channels. More specifically, the present invention relates to methods for performing a real-time polymerase chain reaction (PCR) in a continuous-flow microfluidic system and to methods for monitoring real-time PCR in such systems.

A method for determining geochemistry of at least one geological sample with laser-induced breakdown spectral measurements performed on the geological sample in a time variant manner with spectral acquisitions made after each of a plurality of measurement shots, spectral pre-processing performed as necessary, and subsequent analysis is applied to the collected data to determine at least one geochemistry parameter of the sample. The method can provide a rapid method to estimate thermal maturity of a sample, which does not require sample preparation, and which can be non-destructive with respect to portions of the sample. A system for performing the method also is provided.

Processes for monitoring the levels of oxygen and/or nitrogen in a substantially oxygen and nitrogen-free plasma ashing process generally includes monitoring the plasma using optical emission. An effect produced by the low levels of oxygen and/or nitrogen species present on other species generally abundant in the plasma is monitored and correlated to amounts of oxygen and nitrogen present in the plasma. This so-called “effect detection” process monitors perturbations in the spectra specifically associated with species other than nitrogen and/or oxygen due to the presence of trace amounts of oxygen and/or nitrogen species and is used to quantitatively determine the amount of oxygen and/or nitrogen at a sensitivity on the order of 1 part per million and potentially 1 part per billion.

A method of endpoint detection during plasma processing of a semiconductor wafer comprises processing a semiconductor wafer using a plasma, detecting radiation emission from the plasma during the semiconductor processing, and tracking data points representing changes in spectra of the radiation as a function of time during the semiconductor processing. At any point prior to or during processing a plurality of profiles are provided, each profile representing a different processing condition affecting detection of the desired plasma processing endpoint of the semiconductor wafer. After selecting a desired profile, a first set of parameters are input, representing simplified values for determining when changes in spectra of the radiation indicate that plasma processing of the semiconductor wafer reaches a desired endpoint. The selected profile converts the input first set of parameters into a larger, second set of parameters, and then applies the second set of parameters to an algorithm that converts data points from the spectra of the radiation as a function of time into an endpoint curve. The method then uses the algorithm to track changes in spectra of the radiation as a function of time and determine when plasma processing of the semiconductor wafer reaches a desired endpoint.

A system is disclosed for monitoring a property of an ingested or in-taken drug, food, drink or toxic substance, non-invasively or minimally invasively, which can also identify the subject person being monitored, if desired. The system comprises: a means of labeling the substance with a labeling media to have a useful signature indicative of, or bearing a relation to the property; a means to allow the signature to be read non-invasively or minimally invasively; and a means to identify, in any manner, who is being monitored.

A system and method are disclosed for implementing a power source including a power amplifier that generates a radio-frequency power signal with an adjustable operating frequency. The power amplifier also generates a reference phase signal that is derived from the radio-frequency power signal. An impedance match provides the radio-frequency power signal to a plasma coil that has a variable resonance condition. A phase probe is positioned adjacent to the plasma coil to generate a coil phase signal corresponding to the adjustable operating frequency. A phase-locked loop then generates an RF drive signal that is based upon a phase relationship between the reference phase signal and the coil phase signal. The phase-locked loop provides the RF drive signal to the power amplifier to control the adjustable operating frequency, so that the adjustable operating frequency then tracks the variable resonance condition.

The invention discloses an analysis and detection method for impurity elements such as aluminum, calcium, ion, molybdenum, niobium, titanium, tungsten and the like in chromium carbide. The method comprises adding a chromium carbide sample into a dissolving cup, adding hydrofluoric acid, sulphuric acid and nitric acid sequentially, stirring, charging into a sealed high-pressure jar; putting the sealed high-pressure jar into a microwave extinguishing instrument for two times of microwave extinguishment; taking the high-pressure jar out of the microwave extinguishing instrument for cooling, transferring the dissolved chromium carbide liquid sample into a volumeric flask, diluting to a predetermined index, stirring; preparing a chromium substrate matched mixed standard solution series of aluminum, calcium, iron, molybdenum, niobium, titanium and tungsten; measuring element emission power of aluminum, calcium, iron, molybdenum, niobium, titanium, tungsten or the like in a blank liquid sample, a chromium carbide liquid sample and the prepared series mixed standard solution by an inductively coupled plasma atomic emission spectrometer in the same time, obtaining the analysis result by checking a standard working curve or by linear equation calculation. The invention adopts two times of microwave extinguishment using the mixed acid, solves the problem of hardness in chromium carbide decomposition, having a measurement range from 0.010% to 1.00%, which is high in accuracy, and good in precision.

A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes calculating Scores from at least a portion of the collected intensity data using at most first, second, third and fourth Principal Components derived from a model. The method also includes determining the etch endpoint using Scores corresponding to at least one of the first, second, third and fourth Principal Components as an indicator for the etch endpoint.

The present invention is generally directed to a method for non-contact analyte detection by selectively exciting one or more analytes of interest using an IR source optionally operated to produce pulses of light and tuned to at least one specific absorption band without significantly decomposing organic analytes and determining if the analyte is present by comparing emitted photons with an IR detector signal collected one or more times before, during, after, or any combination thereof exciting the analyte. Another embodiment of the present invention provides a method for non-contact analyte detection by selectively exciting one or more analytes of interest using one or more IR sources that are optionally operated to produce pulses of light and tuned to at least one specific wavelength without significantly decomposing organic analytes, wherein the analyte is excited sufficiently to increase the amount of analyte in the gas phase, and wherein the content of the gas is examined to detect the presence of the analyte.

The invention relates to an experimental apparatus for acquiring large-area uniform discharge plasmas, which belongs to the technical field of plasmas. The experimental apparatus comprises a bipolar nanosecond pulse power supply, a reactor, multi-needle-to-plate electrodes, a gas distribution system, a spectral measurement system and a discharge measurement system, wherein the bipolar nanosecond pulse power supply drives dielectric barrier discharge of air and other gas mixtures among the multi-needle-to-plate electrodes in the reactor, and the gas mixtures are input to the reactor through the gas distribution system; the spectral measurement system collects photonic information of plasma discharge in real time and inputs the photonic information to a computer for spectral analysis; and the discharge measurement system collects discharge voltage and current of the high-voltage nanosecond pulse power supply in real time, and the discharge voltage and current are displayed through a digital oscilloscope. By virtue of the bipolar nanosecond narrow-pulse power supply, the large-area discharge plasmas are generated without a magnetic field; and the generated plasmas are uniform, diffusive, high in electron density, high in energy utilization ratio, low in energy consumption and easy to control in a discharge process.