15 results about "Semiconductor plasma" patented technology

The invention relates to the technical field of semiconductor equipment manufacturing and sealing, and particularly discloses a plasma-resistant valve plate sealing assembly and a preparation method and application thereof. The assembly comprises a metal base body, an elastic sealing piece, a PFA isolation belt and an infiltration body between the metal base body and the PFA isolation belt, during preparation, the elastic sealing piece in a specific shape is installed in an outer-layer annular groove, then a PFA melt in an inner-layer annular groove is subjected to hot press forming, the PFA melt and the surface layer of the elastic sealing piece are mutually infiltrated and fused through high temperature and high pressure to form a transition layer, namely the infiltration body, and the PFA isolation belt and the metal base body are combined. According to the finished product, plasma erosion is blocked through the PFA isolation belt, the structural stability is improved through the infiltration layer, the dust generation amount and weight loss are remarkably reduced, the service life is prolonged, and the valve plate sealing assembly is suitable for semiconductor plasma process equipment.

The invention discloses a pressure relief pipeline structure of a semiconductor plasma degumming machine, which is used for relieving pressure from a process cavity to the atmospheric environment, and comprises an inflation pipeline connected to the top wall of the process cavity; the one-way valve is connected to the bottom wall of the process cavity and is connected with the atmospheric environment through a buffer pipeline; and the buffer pipeline is used for reducing airflow disturbance. According to the invention, the problem of pollution of pressure relief airflow to wafer particles can be eliminated on the premise of not changing the main body structure of the cavity.

The invention provides an NOx treatment system and method based on plasma activated water, and relates to the technical field of industrial waste gas treatment. The method comprises the following steps: acquiring waste gas containing nitrogen oxide NOx; according to the method, plasma activated water containing an oxidizing agent is used for spraying exhaust gas containing NOx to absorb NOx, the oxidizing agent and NOx are subjected to an oxidation-reduction reaction in the plasma activated water, and reaction products comprise nitrate ions dissolved in water. The plasma activated water containing the oxidizing agent is used for spraying the waste gas containing NOx, and NOx is effectively removed. Meanwhile, the activation reaction module can be integrated in the industrial waste gas treatment module, so that zero increase of the occupied land cost of NOx removal is realized. The plasma activated water device can be integrated into the semiconductor plasma waste gas treatment system, and the denitration targets of zero reagent addition, zero wastewater discharge and zero land occupation cost increase are achieved while semiconductor waste gas is efficiently treated.

The utility model provides a kind of semiconductor waste gas treatment power supply unit, it is related to semiconductor plasma waste gas treatment technical field, power supply unit includes shell, the heat dissipation component being arranged in the shell interior, mounting assembly and heating component, the shell includes air inlet side plate and air outlet side plate, air inlet is opened in the air inlet side plate, first air outlet is opened in the air outlet side plate, the heat dissipation component includes radiator, the mounting assembly includes air inlet mounting plate, first installation side plate and second installation side plate, the radiator is located between the air inlet mounting plate and the first installation side plate, the air inlet mounting plate is parallel with the length direction of the shell, the radiator is parallel with the air inlet mounting plate and is arranged, and the heating component is installed in the first installation side plate and the second installation side plate outside side.The utility model provides power supply unit by parallel arrangement heating component in the two sides of mounting assembly, it is convenient to maintain, overhaul.

The application belongs to the field of semiconductor process, and particularly relates to a semiconductor plasma process monitoring device and a monitoring method. The semiconductor plasma process monitoring device provided by the application comprises a signal sampling part, a signal analysis part, a forward transfer coefficient monitoring part, a reverse transfer coefficient monitoring part and a temperature monitoring part. The signal sampling part is provided with a forward signal sampling end, a reverse signal sampling end and two radio frequency connectors. The signal input end of the forward transfer coefficient monitoring part is connected with the forward signal sampling end. The signal input end of the reverse transfer coefficient monitoring part is connected with the reverse signal sampling end. The signal output ends of the forward transfer coefficient monitoring part, the reverse transfer coefficient monitoring part and the temperature monitoring part are connected with the signal analysis part respectively. The monitoring device can realize real-time collection of the values of the transfer coefficients on the whole transmission line and calibration analysis, so as to realize high accuracy and stability monitoring. Meanwhile, the cost of the composed device is low, and the cost and performance are considered.

A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

The invention discloses a numerical simulation method for two-dimensional Ar-He mixed gas capacitive coupling plasma discharge, and belongs to the technical field of plasma numerical simulation. According to the method, a particle grid method and a Monte Carlo collision method are combined, a gas environment and a two-dimensional grid are initialized, and loop execution is carried out at each time step; an area weight method is used for distributing charges and electric field interpolation, an SOR method is used for solving a Poisson equation, a leapfrog method is used for updating particle motion, a boundary effect and a specific collision event are processed, after a system is stable, statistics is carried out on energy distribution of ions reaching an electrode, and whether the energy distribution is unimodal distribution is judged. And outputting key data of ion energy, ion flux, plasma uniformity and surface topography control for guiding process optimization based on the distribution. According to the method, the defect that a one-dimensional model ignores the radial effect is overcome, the cooperative discharge mechanism of the Ar-He mixed gas is accurately simulated, high-precision key data are provided for semiconductor plasma process optimization, and the method has important practical value.

The application discloses a controllable non-uniform ceramic plate gas outlet system and method for semiconductor plasma process. The system comprises: a double-layer ceramic base with a multi-region gas flow channel; a plurality of gas outlet hole arrays arranged on the base; a detection module for monitoring the etching depth of a wafer surface in real time; a control unit for closed-loop feedback control based on real-time detection data; a gas hole opening and closing execution mechanism driven and controlled by the control unit, which performs micro-motion actions according to control instructions to accurately control the opening and closing state and opening degree of the corresponding region gas outlet hole. The application dynamically and regionally regulates and controls the spatial distribution of the reaction gas in the chamber, effectively compensates for the uneven plasma distribution problem in the traditional scheme, realizes active control and improvement of wafer processing uniformity, and has the advantages of fast response speed, high control precision and strong adaptability.

This invention provides a NO based on plasma-activated water. x This invention relates to the field of industrial waste gas treatment technology, specifically to a treatment system and method for removing nitrogen oxides (NOx). x The exhaust gas; using plasma-activated water containing oxidants, spraying NO... x The exhaust gas, to absorb NO x In plasma-activated water, oxidant and NO x A redox reaction occurs, and the reaction products include water-soluble nitrate ions. This invention utilizes plasma-activated water containing an oxidant, sprayed with NO... x The exhaust gas effectively removes NO. x Meanwhile, the activation reaction module of this invention can be integrated into the industrial waste gas treatment module, realizing NO... x The removal of [the pollutant] results in zero increase in land use costs. This invention integrates a plasma-activated water device into a semiconductor plasma exhaust gas treatment system, achieving the denitrification goals of zero reagent addition, zero wastewater discharge, and zero increase in land use costs while efficiently treating semiconductor exhaust gas.

This invention discloses a top cover structure and semiconductor plasma process equipment. The top cover structure includes a cover body, a ring component, and a spray plate. The cover body is located above the ring component, forming an annular gap between the cover body and the ring component. The spray plate is arranged below the cover body. A flow channel assembly for the flow of purge gas is provided inside the cover body. The flow channel assembly includes an outer ring flow channel and an inner ring flow channel, which are concentrically arranged. This invention abandons the traditional single-channel design and innovatively adopts a concentrically arranged outer and inner ring flow channel. Utilizing the flow-dividing effect of the dual channels, the purge gas is dispersed into two channels for simultaneous flow. Structurally, this directly disperses the overall gas flow rate, avoiding localized gas accumulation. By changing the gas flow pattern, it reduces the concentrated accumulation of charge in local areas, thereby solving the problem of abnormal arc discharge easily generated when the existing single-annular flow channel top cover is purged with argon gas.

The invention discloses an immersed plasma energy and dose testing device, and relates to the field of semiconductor plasma injection process, in the device, a grid group and a first collector are sequentially arranged in an energy collection device at intervals, the grid group comprises N grids, and a voltage supply module provides corresponding target bias voltage for the grid group; forming a grading energy screening electric field; the first collector collects the screened plasma and converts and outputs a first electric signal; a second collector in the dose collection device collects the total number of plasmas in the device and outputs a second electric signal; and the conversion module gates one path of electric signal at any moment and converts and outputs a target voltage signal to the control module so as to determine the energy distribution and dose distribution of the plasma. According to the scheme, energy testing and dosage testing can be carried out at the same time, it is guaranteed that the ion energy distribution condition and the dosage uniformity condition are accurately monitored in the one-time plasma injection process, and wafer modification errors are reduced.

A method of manufacturing semiconductor devices includes repeatedly performing a transfer operation which transfers each of a plurality of semiconductor wafers between a substrate handling module and a processing chamber through a wafer access port, the processing chamber including at least one consumable component. Using the processing chamber, a semiconductor manufacturing process is performed on each of the plurality of semiconductor wafers; and detecting an optical signal from the at least one consumable component during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

The application discloses a residual charge automatic release electrostatic chuck and belongs to the technical field of semiconductor plasma equipment. The electrostatic chuck mainly comprises an upper insulating ceramic layer, an electrode layer, a conductive ceramic layer and a lower insulating ceramic layer. The conductive ceramic layer is arranged between the upper insulating ceramic layer and the lower insulating ceramic layer, and a plurality of conductive ceramic columns of the conductive ceramic layer penetrate through the upper insulating ceramic layer and the lower insulating ceramic layer. Therefore, when a wafer is placed on the electrostatic chuck, the bottom surface of the wafer is in contact with the upper conductive ceramic column, and the lower conductive ceramic column is coupled to a grounding electrode. After a process is completed, the structure can provide a path for releasing residual charge of the wafer. Since the conductive ceramic layer, the upper insulating ceramic layer, the electrode layer and the lower insulating ceramic layer are integrally laminated and formed, and the same ceramic material is combined therebetween, the electrostatic chuck has the advantages of good matching degree, good combination stability and the like.

The application discloses an anti-plasma etching coating alumina ceramic material and a preparation method thereof, and belongs to the field of advanced ceramic materials and semiconductor equipment parts, and aims to solve the technical problems of insufficient anti-plasma etching performance of existing alumina chamber parts, high porosity of thermal spraying coating, mismatch of thermal expansion coefficients of the coating and the substrate, and weak interface bonding force and the like. The application forms a yttrium aluminate composite interface reaction layer in situ at the grain boundary of the surface of the substrate through precise sand blasting roughening, yttrium nitrate solution pre-permeation and high-temperature calcination chemical pretreatment, and then continuously prepares Y2O 3‑ Y4Al2O9 bonding layer and Y2O3-Y4Al2O9-MgO three-phase nano composite functional layer through a two-step room temperature aerosol deposition process. The product is suitable for high-reliability long-life protection of key ceramic parts of semiconductor plasma etching equipment chambers.

This invention discloses a dual-coil plasma stripping device. The invention relates to the field of semiconductor plasma stripping process equipment technology, and includes an air intake mechanism and a stripping mechanism. The upper cavity of the stripping mechanism includes a ceramic outer cylinder, a ceramic inner cylinder, an outer radio frequency (RF) coil, and an inner RF coil. The outer RF coil is located on the outside of the ceramic outer cylinder, and the inner RF coil is located on the inner wall of the ceramic inner cylinder. The advantages of this invention are: by adopting a dual-coil design with an outer RF coil and an inner RF coil, the outer RF coil, composed of a single-layer multi-strand coil, can carry a larger current, thereby generating a stronger electromagnetic field, which helps to improve the plasma generation efficiency and make the gas ionization more complete. The inner RF coil, spirally wrapped around the inner wall of the ceramic inner cylinder, works in conjunction with the outer RF coil to make the electromagnetic field more uniformly distributed in the reaction chamber, thereby ensuring that the plasma can uniformly cover the entire surface of the wafer to be processed, greatly improving the uniformity and quality of stripping.