30 results about "Semiconductor plasma" patented technology

The invention relates to the technical field of semiconductor equipment manufacturing and sealing, and particularly discloses a plasma-resistant valve plate sealing assembly and a preparation method and application thereof. The assembly comprises a metal base body, an elastic sealing piece, a PFA isolation belt and an infiltration body between the metal base body and the PFA isolation belt, during preparation, the elastic sealing piece in a specific shape is installed in an outer-layer annular groove, then a PFA melt in an inner-layer annular groove is subjected to hot press forming, the PFA melt and the surface layer of the elastic sealing piece are mutually infiltrated and fused through high temperature and high pressure to form a transition layer, namely the infiltration body, and the PFA isolation belt and the metal base body are combined. According to the finished product, plasma erosion is blocked through the PFA isolation belt, the structural stability is improved through the infiltration layer, the dust generation amount and weight loss are remarkably reduced, the service life is prolonged, and the valve plate sealing assembly is suitable for semiconductor plasma process equipment.

A system and method for measuring and analyzing power flow parameters in RF-based excitation systems for semi-conductor plasma generators. A measuring probe is connected to an RF transmission line for receiving and measuring voltage and current signals from the transmission line. A high-speed sampling process converts the measured RF voltage and current signals into digital signals. The digital signals are then processed so as to reveal fundamental, intermodulation, triple beat, and harmonic amplitude and phase information corresponding to the original RF signals. The measurement system may also inhibit arcing by detecting when the amplitude of the intermodulation or triple beat signal exceeds a predetermined threshold, and indicating an alarm and / or reducing the power of the plasma generator when the predetermined threshold is exceeded.

A wideband variable impedance load for high volume manufacturing qualification and diagnostic testing of a radio frequency power source, an impedance matching network and RF sensors for generating plasma in a semiconductor plasma chamber for semiconductor fabrication processes. The wideband variable impedance load may comprise a fixed value resistance operable at a plurality of frequencies and coupled with a variable impedance network capable of transforming the fixed value resistance into a wide range of complex impedances at the plurality of frequencies. Response times and match tuning element position repeatability may be verified. Automatic testing, verification and qualification of production and field installed radio frequency power sources for plasma generation are easily performed.

The invention discloses a pressure relief pipeline structure of a semiconductor plasma degumming machine, which is used for relieving pressure from a process cavity to the atmospheric environment, and comprises an inflation pipeline connected to the top wall of the process cavity; the one-way valve is connected to the bottom wall of the process cavity and is connected with the atmospheric environment through a buffer pipeline; and the buffer pipeline is used for reducing airflow disturbance. According to the invention, the problem of pollution of pressure relief airflow to wafer particles can be eliminated on the premise of not changing the main body structure of the cavity.

The present invention discloses a process for cleaning various deposits on the surface and pores of a gas partial pressure sprayer of a semiconductor plasma etching device, including sealing and waterproof protection; detecting the adhesion degree of the adhesion layer between the ceramic plate and the body; flushing the pores; purging the pores through CDA; flushing the pores with a mixed solution A; wiping the ceramic surface with a dust-free cloth dipped in a mixed solution B; polishing; wiping the ceramic surface on the front of the gas partial pressure sprayer with a dust-free cloth dipped in a mixed solution C; purging the pores through CDA; drying; sealing and waterproof protection; detecting the adhesion degree of the adhesion layer between the ceramic plate and the body after washing; performing ultrasonic cleaning; purging; and finally drying. This process makes the surface of the gas partial pressure sprayer and the pores absolutely clean, ensures the absolute cleanliness of the reaction gas passage, greatly reduces the possibility of impurities contaminating the reaction gas, and enables the cleaned components to meet the use requirements of the microenvironment in the equipment cavity.

The invention discloses a controllable non-uniform ceramic plate air outlet system and method for a semiconductor plasma process. The system comprises a double-layer ceramic substrate with a multi-area gas flow channel; the plurality of air outlet hole arrays are arranged on the base body; the detection module is used for monitoring the etching depth of the surface of the wafer in real time; the control unit is used for performing closed-loop feedback control based on the real-time detection data; the air hole opening and closing executing mechanism is driven and controlled by the control unit and executes micro-displacement action according to the control instruction so as to accurately control the opening and closing state and the opening degree of the air outlet holes in the corresponding area. According to the invention, the spatial distribution of the reaction gas in the chamber is dynamically regulated and controlled in a zoned manner, the problem of non-uniform plasma distribution in a traditional scheme is effectively compensated, active control and improvement of wafer processing uniformity are realized, and the method has the advantages of high response speed, high control precision and strong adaptability.

The invention provides an NOx treatment system and method based on plasma activated water, and relates to the technical field of industrial waste gas treatment. The method comprises the following steps: acquiring waste gas containing nitrogen oxide NOx; according to the method, plasma activated water containing an oxidizing agent is used for spraying exhaust gas containing NOx to absorb NOx, the oxidizing agent and NOx are subjected to an oxidation-reduction reaction in the plasma activated water, and reaction products comprise nitrate ions dissolved in water. The plasma activated water containing the oxidizing agent is used for spraying the waste gas containing NOx, and NOx is effectively removed. Meanwhile, the activation reaction module can be integrated in the industrial waste gas treatment module, so that zero increase of the occupied land cost of NOx removal is realized. The plasma activated water device can be integrated into the semiconductor plasma waste gas treatment system, and the denitration targets of zero reagent addition, zero wastewater discharge and zero land occupation cost increase are achieved while semiconductor waste gas is efficiently treated.

The utility model provides a kind of semiconductor waste gas treatment power supply unit, it is related to semiconductor plasma waste gas treatment technical field, power supply unit includes shell, the heat dissipation component being arranged in the shell interior, mounting assembly and heating component, the shell includes air inlet side plate and air outlet side plate, air inlet is opened in the air inlet side plate, first air outlet is opened in the air outlet side plate, the heat dissipation component includes radiator, the mounting assembly includes air inlet mounting plate, first installation side plate and second installation side plate, the radiator is located between the air inlet mounting plate and the first installation side plate, the air inlet mounting plate is parallel with the length direction of the shell, the radiator is parallel with the air inlet mounting plate and is arranged, and the heating component is installed in the first installation side plate and the second installation side plate outside side.The utility model provides power supply unit by parallel arrangement heating component in the two sides of mounting assembly, it is convenient to maintain, overhaul.

The present invention discloses a plasma waveguide phase shifter, which belongs to the field of radio frequency communication technology. The phase shifter uses waveguide as the basic carrier and combines the relevant technologies of solid semiconductor plasma to realize the phase change of electromagnetic waves inside the waveguide. The phase shifter mainly includes two parts: waveguide and solid semiconductor plasma. The waveguide can be used in various forms. The solid semiconductor plasma has the characteristics of small size and independent control. It can be designed according to the design ideas of traditional digital phase shifters, or it can be designed as a continuously adjustable phase shifter. Compared with traditional phase shifters, the phase shifter of the present invention has the following main advantages: low insertion loss; flexible design, solid semiconductor plasma can be integrated on the inner wall of waveguide of any structure; great advantages for high-frequency use; convenient and simple control, solid semiconductor plasma has only two states, and the state change can be simply realized by external voltage control.

The application belongs to the field of semiconductor process, and particularly relates to a semiconductor plasma process monitoring device and a monitoring method. The semiconductor plasma process monitoring device provided by the application comprises a signal sampling part, a signal analysis part, a forward transfer coefficient monitoring part, a reverse transfer coefficient monitoring part and a temperature monitoring part. The signal sampling part is provided with a forward signal sampling end, a reverse signal sampling end and two radio frequency connectors. The signal input end of the forward transfer coefficient monitoring part is connected with the forward signal sampling end. The signal input end of the reverse transfer coefficient monitoring part is connected with the reverse signal sampling end. The signal output ends of the forward transfer coefficient monitoring part, the reverse transfer coefficient monitoring part and the temperature monitoring part are connected with the signal analysis part respectively. The monitoring device can realize real-time collection of the values of the transfer coefficients on the whole transmission line and calibration analysis, so as to realize high accuracy and stability monitoring. Meanwhile, the cost of the composed device is low, and the cost and performance are considered.

A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

The invention discloses a numerical simulation method for two-dimensional Ar-He mixed gas capacitive coupling plasma discharge, and belongs to the technical field of plasma numerical simulation. According to the method, a particle grid method and a Monte Carlo collision method are combined, a gas environment and a two-dimensional grid are initialized, and loop execution is carried out at each time step; an area weight method is used for distributing charges and electric field interpolation, an SOR method is used for solving a Poisson equation, a leapfrog method is used for updating particle motion, a boundary effect and a specific collision event are processed, after a system is stable, statistics is carried out on energy distribution of ions reaching an electrode, and whether the energy distribution is unimodal distribution is judged. And outputting key data of ion energy, ion flux, plasma uniformity and surface topography control for guiding process optimization based on the distribution. According to the method, the defect that a one-dimensional model ignores the radial effect is overcome, the cooperative discharge mechanism of the Ar-He mixed gas is accurately simulated, high-precision key data are provided for semiconductor plasma process optimization, and the method has important practical value.

The application discloses a controllable non-uniform ceramic plate gas outlet system and method for semiconductor plasma process. The system comprises: a double-layer ceramic base with a multi-region gas flow channel; a plurality of gas outlet hole arrays arranged on the base; a detection module for monitoring the etching depth of a wafer surface in real time; a control unit for closed-loop feedback control based on real-time detection data; a gas hole opening and closing execution mechanism driven and controlled by the control unit, which performs micro-motion actions according to control instructions to accurately control the opening and closing state and opening degree of the corresponding region gas outlet hole. The application dynamically and regionally regulates and controls the spatial distribution of the reaction gas in the chamber, effectively compensates for the uneven plasma distribution problem in the traditional scheme, realizes active control and improvement of wafer processing uniformity, and has the advantages of fast response speed, high control precision and strong adaptability.

The invention provides a plasma current monitoring device for a semiconductor plasma etching cavity, and relates to the field of monitoring of a semiconductor plasma etching process. The plasma flow in the cavity can be measured in real time under the condition that the environment of the cavity is not interfered. The device is composed of a main body substrate, an upper surface sensing layer, a lower surface integration layer and an electromagnetic shielding film covering the surface of the substrate. The upper surface sensing layer comprises a non-contact magneto-impedance effect current sensor network which is arranged in an annular array; the lower surface integration layer comprises a master control acquisition microcontroller circuit, a power supply circuit, a thin film battery, a charging circuit, a real-time communication circuit and a storage module. The device adopts a structure, a size and an impedance design similar to those of an actual process wafer, can simulate a real state of the wafer in a plasma etching process, and acquires a magnetic signal of the substrate in real time in an etching process. The collected magnetic signals are processed and stored under the control of the microcontroller, and are transmitted to an external reading device through the real-time communication circuit. The method has wide applicability, can be compatible with various semiconductor process equipment, and provides a reliable technical means for real-time monitoring and optimization of the plasma etching process.

This invention provides a NO based on plasma-activated water. x This invention relates to the field of industrial waste gas treatment technology, specifically to a treatment system and method for removing nitrogen oxides (NOx). x The exhaust gas; using plasma-activated water containing oxidants, spraying NO... x The exhaust gas, to absorb NO x In plasma-activated water, oxidant and NO x A redox reaction occurs, and the reaction products include water-soluble nitrate ions. This invention utilizes plasma-activated water containing an oxidant, sprayed with NO... x The exhaust gas effectively removes NO. x Meanwhile, the activation reaction module of this invention can be integrated into the industrial waste gas treatment module, realizing NO... x The removal of [the pollutant] results in zero increase in land use costs. This invention integrates a plasma-activated water device into a semiconductor plasma exhaust gas treatment system, achieving the denitrification goals of zero reagent addition, zero wastewater discharge, and zero increase in land use costs while efficiently treating semiconductor exhaust gas.

A system and method for measuring and analyzing power flow parameters in RF-based excitation systems for semi-conductor plasma generators. A measuring probe is connected to an RF transmission line for receiving and measuring voltage and current signals from the transmission line. A high-speed sampling process converts the measured RF voltage and current signals into digital signals. The digital signals are then processed so as to reveal fundamental, intermodulation, triple beat, and harmonic amplitude and phase information corresponding to the original RF signals. The measurement system may also inhibit arcing by detecting when the amplitude of the intermodulation or triple beat signal exceeds a predetermined threshold, and indicating an alarm and / or reducing the power of the plasma generator when the predetermined threshold is exceeded.

This invention discloses a top cover structure and semiconductor plasma process equipment. The top cover structure includes a cover body, a ring component, and a spray plate. The cover body is located above the ring component, forming an annular gap between the cover body and the ring component. The spray plate is arranged below the cover body. A flow channel assembly for the flow of purge gas is provided inside the cover body. The flow channel assembly includes an outer ring flow channel and an inner ring flow channel, which are concentrically arranged. This invention abandons the traditional single-channel design and innovatively adopts a concentrically arranged outer and inner ring flow channel. Utilizing the flow-dividing effect of the dual channels, the purge gas is dispersed into two channels for simultaneous flow. Structurally, this directly disperses the overall gas flow rate, avoiding localized gas accumulation. By changing the gas flow pattern, it reduces the concentrated accumulation of charge in local areas, thereby solving the problem of abnormal arc discharge easily generated when the existing single-annular flow channel top cover is purged with argon gas.

The utility model relates to a semiconductor plasma degumming machine applied to the field of degumming equipment, which comprises an equipment cavity, the inner end of the equipment cavity is provided with a storage tray, the inner end of the storage tray is fixedly connected with a hollow-out inner plate, the upper end of the hollow-out inner plate is provided with a plurality of pairs of clamping pieces, and each clamping piece comprises a cylindrical stand column. A circular groove inner hole is formed in the outer end of the cylindrical stand column, an electromagnetic inner block is fixedly connected to the inner side wall of the circular groove inner hole, a limiting transverse rod is slidably connected to the inner end of the circular groove inner hole, a linkage iron sheet is fixedly connected to the end, close to the electromagnetic inner block, of the limiting transverse rod, and a spring is fixedly connected between the linkage iron sheet and the electromagnetic inner block. According to the semiconductor plasma degumming machine, through the semiconductor plasma degumming machine with the material clamping function, the workpiece to be degummed is not directly placed on the hollow inner plate, so that an operator can quickly find a proper acting point when taking out the workpiece to be degummed, and mechanical damage to the workpiece to be degummed is avoided.

The utility model relates to the technical field of plasma cleaning devices, in particular to a semiconductor material box clamping device and a semiconductor plasma cleaning machine.The device comprises a material box containing plate, a material box pulling plate and a movable limiting mechanism, the material box containing plate comprises a containing plate body, and a plurality of movable limiting holes are formed in the containing plate body; a plurality of material box fixing and positioning plates are fixed on the top surface of the placing plate main body; the movable limiting mechanism comprises a plurality of material box movable positioning plates, a lead screw assembly and a plurality of movable matching receding assemblies. The screw rod assembly comprises a screw rod and a pair of screw rod fixing seats; each movable matching receding assembly comprises a receding block and a spring. When the adjusting lead screw stretches out and draws back, the width of the clamping positions formed between the multiple material box movable positioning plates and the corresponding material box fixed positioning plates is synchronously adjusted. According to the semiconductor material box clamping device, the width of the clamping position can be adjusted by manually rotating the end of the lead screw, the semiconductor material box clamping device is suitable for clamping material boxes with different widths, the structure is simple and effective, and operation is convenient.

The invention discloses armored reinforced yttrium oxide composite ceramic and a preparation method thereof. The high-purity yttrium oxide ceramic is adopted as an inner core, so that the excellent fluorine-based and chlorine-based plasma corrosion resistance is ensured; and the outer layer adopts yttrium oxide-magnesium oxide composite ceramic containing 10-15 at% of Mg to form the armor layer, so that the mechanical property and the crack resistance of the material are remarkably improved. By designing a honeycomb unit structure on the armor layer, a light high-strength composite ceramic component is realized, corrosion resistance and high strength are both considered, and the problems that traditional yttrium oxide ceramic is low in strength and easy to crack are solved. The prepared ceramic component is suitable for extreme corrosion environments such as semiconductor plasma etching and cleaning equipment and has excellent corrosion resistance, mechanical stability and structural reliability, the service life is remarkably prolonged, the manufacturing cost is reduced, and material upgrading of high-end semiconductor manufacturing equipment is promoted.

The invention discloses an immersed plasma energy and dose testing device, and relates to the field of semiconductor plasma injection process, in the device, a grid group and a first collector are sequentially arranged in an energy collection device at intervals, the grid group comprises N grids, and a voltage supply module provides corresponding target bias voltage for the grid group; forming a grading energy screening electric field; the first collector collects the screened plasma and converts and outputs a first electric signal; a second collector in the dose collection device collects the total number of plasmas in the device and outputs a second electric signal; and the conversion module gates one path of electric signal at any moment and converts and outputs a target voltage signal to the control module so as to determine the energy distribution and dose distribution of the plasma. According to the scheme, energy testing and dosage testing can be carried out at the same time, it is guaranteed that the ion energy distribution condition and the dosage uniformity condition are accurately monitored in the one-time plasma injection process, and wafer modification errors are reduced.

The utility model discloses a plasma etching machine table with an alarm prompt in the field of semiconductor plasma etching, which comprises a machine table, a door body capable of being opened is arranged on the front side of the machine table, a hollow working chamber is arranged in the machine table, and a horizontal upper limiting plate and a horizontal lower supporting plate are respectively arranged in the working chamber. Two parallel longitudinal guide rails are arranged on the lower supporting plate, a feeding tool is placed on the two guide rails, two sliding grooves corresponding to the two guide rails are formed in the bottom of the feeding tool, a left limiting seat and a right limiting seat are correspondingly arranged on the lower supporting plate and located on the left side and the right side of the feeding tool respectively, and the left limiting seat and the right limiting seat are both longitudinally arranged. A plurality of supporting seats are arranged at the bottom of the machine table; an induction support is arranged on the edge of the door body, a proximity switch is arranged on the side face of the machine table corresponding to the induction support, and the proximity switch is connected with the PLC. According to the utility model, the feeding efficiency is improved, and part of wafer products are prevented from becoming defective products and being scrapped without the operation of the procedure.

A method of manufacturing semiconductor devices includes repeatedly performing a transfer operation which transfers each of a plurality of semiconductor wafers between a substrate handling module and a processing chamber through a wafer access port, the processing chamber including at least one consumable component. Using the processing chamber, a semiconductor manufacturing process is performed on each of the plurality of semiconductor wafers; and detecting an optical signal from the at least one consumable component during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

The utility model discloses semiconductor plasma equipment and a negative pressure exhaust device thereof, and the negative pressure exhaust device is used for being jointed with a waste gas exhaust port of a plasma reaction chamber of the semiconductor plasma equipment and comprises a three-way pipe, an air pump and a plasma generator. The plasma generator is connected between one pipe opening of one main pipe of the three-way pipe and the first waste gas exhaust port, and the sucking pump is connected to the other pipe opening of the main pipe of the three-way pipe; thus, when the sucking pump is started, the plasma reaction chamber is subjected to air suction, negative pressure airflow is generated, the negative pressure airflow firstly passes through the plasma chamber of the plasma generator, then plasma generated by the plasma chamber is brought to the main pipe of the three-way pipe by the negative pressure airflow, and then the inner wall face of the main pipe is cleaned. And the frequency of manually cleaning or maintaining the three-way pipe is reduced.

The invention belongs to the technical field of SERS (Surface Enhanced Raman Scattering) detection, and particularly relates to a Raman probe based on reduced graphene oxide enhanced semiconductor plasma as well as a preparation method and application of the Raman probe. A composite structure of semiconductor plasma tungsten oxide nanowire in-situ loaded reduced graphene oxide is prepared by using a solvothermal method, and the composite structure is used as a Raman probe to realize dual functions of methylene blue (MB) molecule quantitative detection and photocatalytic degradation. After WO3-x with an SPR effect is compounded with reduced graphene oxide, on one hand, target aromatic pollutant molecules are efficiently adsorbed through pi-pi stacking interaction, the SERS activity of the probe is improved, on the other hand, surface oxygen vacancies of a semiconductor WO3-x can be effectively stabilized, continuous generation of hot electrons is promoted, and the SERS activity of the probe is improved. More reaction active sites are provided, the photocatalytic degradation performance of the probe is improved, and meanwhile, molecular chemical bond breakage priority information is obtained through SERS in-situ monitoring.

The application discloses a residual charge automatic release electrostatic chuck and belongs to the technical field of semiconductor plasma equipment. The electrostatic chuck mainly comprises an upper insulating ceramic layer, an electrode layer, a conductive ceramic layer and a lower insulating ceramic layer. The conductive ceramic layer is arranged between the upper insulating ceramic layer and the lower insulating ceramic layer, and a plurality of conductive ceramic columns of the conductive ceramic layer penetrate through the upper insulating ceramic layer and the lower insulating ceramic layer. Therefore, when a wafer is placed on the electrostatic chuck, the bottom surface of the wafer is in contact with the upper conductive ceramic column, and the lower conductive ceramic column is coupled to a grounding electrode. After a process is completed, the structure can provide a path for releasing residual charge of the wafer. Since the conductive ceramic layer, the upper insulating ceramic layer, the electrode layer and the lower insulating ceramic layer are integrally laminated and formed, and the same ceramic material is combined therebetween, the electrostatic chuck has the advantages of good matching degree, good combination stability and the like.

The application discloses an anti-plasma etching coating alumina ceramic material and a preparation method thereof, and belongs to the field of advanced ceramic materials and semiconductor equipment parts, and aims to solve the technical problems of insufficient anti-plasma etching performance of existing alumina chamber parts, high porosity of thermal spraying coating, mismatch of thermal expansion coefficients of the coating and the substrate, and weak interface bonding force and the like. The application forms a yttrium aluminate composite interface reaction layer in situ at the grain boundary of the surface of the substrate through precise sand blasting roughening, yttrium nitrate solution pre-permeation and high-temperature calcination chemical pretreatment, and then continuously prepares Y2O 3‑ Y4Al2O9 bonding layer and Y2O3-Y4Al2O9-MgO three-phase nano composite functional layer through a two-step room temperature aerosol deposition process. The product is suitable for high-reliability long-life protection of key ceramic parts of semiconductor plasma etching equipment chambers.

The invention discloses an etching method and equipment for semiconductor plasma etching. A metal mask with a specific pattern formed by an array of openings through which plasma can pass is introduced into a vacuum cavity for plasma etching, and the metal mask is placed above a substrate to be etched at a position which is kept at a certain distance from the substrate; in this way, plasma generated in the plasma etching process reaches the substrate through the opening in the metal mask and etches the substrate. According to the scheme, non-uniform etching of the nanostructures can be achieved in a cost-effective and practical mode.

This invention discloses a dual-coil plasma stripping device. The invention relates to the field of semiconductor plasma stripping process equipment technology, and includes an air intake mechanism and a stripping mechanism. The upper cavity of the stripping mechanism includes a ceramic outer cylinder, a ceramic inner cylinder, an outer radio frequency (RF) coil, and an inner RF coil. The outer RF coil is located on the outside of the ceramic outer cylinder, and the inner RF coil is located on the inner wall of the ceramic inner cylinder. The advantages of this invention are: by adopting a dual-coil design with an outer RF coil and an inner RF coil, the outer RF coil, composed of a single-layer multi-strand coil, can carry a larger current, thereby generating a stronger electromagnetic field, which helps to improve the plasma generation efficiency and make the gas ionization more complete. The inner RF coil, spirally wrapped around the inner wall of the ceramic inner cylinder, works in conjunction with the outer RF coil to make the electromagnetic field more uniformly distributed in the reaction chamber, thereby ensuring that the plasma can uniformly cover the entire surface of the wafer to be processed, greatly improving the uniformity and quality of stripping.

Embodiments provided herein generally include an apparatus and method in a plasma processing system for fast and inexpensive repair and replacement of radio frequency (RF) sensors required for operation of RF power generation and impedance matching equipment used to generate plasma in a plasma chamber during semiconductor processing in the plasma chamber. Flexible communication between the equipment in this plasma processing system enables sharing of process information and equipment settings for batch processing of multiple semiconductor wafers during a manufacturing process. Operational settings of a master plasma processing system can be used to control the operation of multiple slave processing systems. Additionally, operational settings of the master plasma processing system can be recorded and reused to control multiple slave processing systems.