The invention belongs to the field of power
semiconductor devices, and particularly discloses a low-loss IGBT
chip with a compensation type floating P region and a preparation method of the low-loss IGBT
chip. According to the invention, the N-CS layer is formed in the floating P region, the N-CS layer forms a hole barrier when the device is conducted, the hole concentration of the emitter side is increased by the floating P region,
electron injection of the emitter side is enhanced in order to maintain electric neutrality, and the on-state
voltage drop can be effectively reduced. In the switching process, the N-CS layer and the floating P region are mutually depleted, the expansion time of a depletion layer is shortened, and the
switching time of the device is shortened. The switching loss can be reduced while the low on-state
voltage drop of the device is maintained, and the on-state
voltage drop and the switching loss are effectively balanced. An N-type layer is introduced into a floating P region, and the original maximum
electric field is reduced due to positive charges provided by N-CS, so that the reduction of the
electric flux of the traditional floating P region, the reduction of a concentrated high
electric field near a groove, the protection of a
gate oxide layer at the bottom of the groove and the improvement of the blocking voltage of the device are facilitated.