Apparatus and method for treating semiconductor device with plasma

Abstract

A semiconductor plasma-processing apparatus smoothes effects of side radical-concentration, which are frequently generated by inductive-coupling plasma sources, enhancing the etching uniformity therein. The apparatus includes a remote plasma generator providing lots of radicals and ions from activating processing gas; a reaction chamber having an inflow port through which the activated processing gas; a susceptor, on which a wafer is settled, disposed in the reaction chamber; and an inductive-coupling plasma generator disposed in the reaction chamber, providing high-frequency energy to the activated processing gas. As radicals and ions are affluently generated enough to conduct an etching process, by means of the remote and inductive-coupling plasma sources, the reaction sprightly proceeds to improve the etching efficiency.

Description

[0001] related application [0002] This application claims priority from Korean Patent Application No. 10-2005-0005790 filed on Jan. 21, 2005, the entire contents of which are incorporated herein by reference. technical field [0003] The subject matter disclosed herein relates to plasma processing equipment. Specifically, the subject matter disclosed herein relates to semiconductor plasma processing apparatus and methods that improve etch uniformity by eliminating the high concentration of side groups often produced by inductively coupled plasma sources. Background technique [0004] With the development trend of semiconductor devices toward higher integration, larger wafer size, larger LCD area, etc., the demand for high-performance equipment for processing etching processes or thin films is increasing. Furthermore, various plasma processing equipment for plasma etching, plasma enhanced CVD, and plasma ashing are also required. In other words, those devices are graduall...

AI Technical Summary

Problems solved by technology

If the group distribution is irregular, the chemical reaction becomes uneven, which reduces the etch uniformity

In addition, if there is not enough amount of groups, the etch rate will be reduced

Images