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Etching agent composition used for copper-contained metal

A technology of composition and etchant, which is applied in the field of etchant composition, can solve problems such as unsatisfied user performance, achieve excellent etching uniformity and flatness, improve processing margin, and simplify the process

Active Publication Date: 2014-07-09
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although various etchant compositions for copper-containing metal layers are currently used, these compositions still do not meet the performance expected by users

Method used

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  • Etching agent composition used for copper-contained metal
  • Etching agent composition used for copper-contained metal
  • Etching agent composition used for copper-contained metal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to Embodiment 6

[0080] Example 1 to Example 6 and Comparative Example

[0081] An etchant composition for a copper-containing metal layer was prepared by using the components listed in Table 1 in their respective contents (% by weight) and adding the balance of water.

[0082] [Table 1]

[0083]

[0084]

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Abstract

The present invention discloses an etching agent composition used for copper-contained metal, comprising hydrogen peroxide (H2O2), a water-soluble compound represented by the formula 1, and water, so as to increase the number of etchable substrates, thereby raising finish allowance.

Description

technical field [0001] The present invention relates to an etchant composition for copper-containing metal layers. Background technique [0002] Regarding semiconductor devices, the process of forming metal wiring on a substrate generally includes forming a metal layer by sputtering, forming a photoresist on selected regions by coating, exposing and developing the photoresist, and etching the metal layer. Furthermore, it is also possible to include a cleaning process before or after the individual processes, respectively. The aforementioned etching process refers to a process of leaving a metal layer on a selected area by using a photoresist as a mask, and generally includes dry etching using plasma or wet etching using an etchant composition. [0003] In such semiconductor devices as described above, the resistance of metal wiring has recently become a major concern. This is because the resistance is an important factor causing the delay of the resistance-capacitance (RC)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18
CPCC23F1/18C23F1/26C23F1/42
Inventor 权五炳李智娟田玹守
Owner DONGWOO FINE CHEM CO LTD
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