25results about How to "Improve thickness uniformity" patented technology

This application belongs to the field of semiconductor processing technology, specifically relating to a backlight reflective layer printing device and its application. This application effectively controls the vibration generated during the printing process by optimizing the mechanical structure and position design of the frame, support plate device, and multi-axis spindle, reducing the deviation between the actual operating path and the planned path of the piezoelectric jet valve. This significantly improves the stability of the piezoelectric jet valve operation and the printing accuracy. Furthermore, this application, by setting up a micro-adjustment device, a positioning system, an inkjet calibration system, and a needle alignment device, and utilizing their coordinated relationship, can precisely correct printing parameters such as the jetting position or jetting volume of the piezoelectric jet valve. Therefore, based on the aforementioned stable printer body structure, the coating quality of the backlight reflective layer obtained by piezoelectric jet printing will be further improved. Thus, the backlight reflective layer prepared using this invention has better thickness uniformity and a better reflective effect.

The application provides a dry-process electrode tab film and a preparation method thereof, and belongs to the technical field of dry-process electrode manufacturing. The dry-process electrode tab film comprises active material particles, conductive agent particles and an adhesive, the adhesive is in a fibrous form, the active material particles comprise large-diameter active material particles and small-diameter active material particles, wherein the particle size D50 of the large-diameter active material particles is 4-10 mu m, the particle size D50 of the small-diameter active material particles is 0.9-1.8 mu m, and the small-diameter active material particles are arranged in an area close to and adhered to the adhesive along the extension direction of the adhesive. The dry-process electrode tab film can have good film-forming property and high compaction density.

The utility model discloses a sample fixing device of sputter coater, relates to sample fixing technical field of sputter coater, including fixed stand, sample stage, negative pressure hole, rotating mechanism and adjusting mechanism, the fixed stand top is provided with sample stage, and the inside of sample stage is provided with negative pressure hole, the sample stage top is provided with annular pressing plate. The utility model discloses a sample fixing device of sputter coater, and the film is fixed on the sample stage through the pressure of annular pressing plate, prevents the film from being adsorbed into the negative pressure hole in the sample stage, thereby improves the stability and thickness uniformity of film when sputtering gold spraying, thereby improves gold spraying effect, through the adjusting mechanism adjustment between sample stage and fixed stand's inclination included angle, and then the deposition angle of sample stage top film is regulated, and the deposition angle of film is different and can play different effects, thereby the flexibility when using sample stage is promoted.

The packaging substrate manufacturing method of the present invention manufactures a packaging substrate by including the following steps: a preparation step of preparing a panel-level packaging substrate, the panel-level packaging substrate including a core substrate, a first redistribution layer disposed on the core substrate, and a second redistribution layer disposed below the core substrate; and an electroless surface treatment step of simultaneously performing an electroless surface treatment on the upper and lower surfaces of the panel-level packaging substrate to form terminals; the packaging substrate includes: a core layer, a first redistribution layer disposed on the core layer, a second redistribution layer disposed below the core layer, and the terminals disposed on the upper surface of the first redistribution layer and the lower surface of the second redistribution layer; the difference between the maximum thickness value and the minimum thickness value of the terminals formed on the packaging substrate is less than 5 μm; in this case, terminals with improved thickness uniformity can be formed and process efficiency can be improved during terminal formation.

The utility model belongs to the technical field of film blowing machines, and particularly relates to a film bubble blowing device of a film blowing machine, which comprises an air ring shell, a plurality of air inlet pipes are mounted on the side wall of the air ring shell, filter boxes are mounted on the air inlet pipes, threaded holes are formed in a sealing plate and a top plate of each filter box, screw rods are assembled in the threaded holes, and the air ring shell and the air ring shell are integrally formed. A top plate and a sealing plate of the filter box are provided with sealing strips, air holes are formed in the side wall of the filter box, a collecting frame is placed in the filter box, a round hole is formed in the collecting frame, a filter plate is fixedly installed in the round hole, a screw is screwed out of a threaded hole in an air inlet pipe, then the sealing plate is opened, and the collecting frame clamped in the filter box is taken out. At the moment, accumulated dust can be collected on the collecting frame, the collecting frame can take out the dust together, then the collecting frame and the filter plate on the collecting frame are cleaned, rapid cleaning of the filter plate is achieved, the filter plate can be rapidly detached and cleaned through the structure, and the detaching convenience of the filter structure can be improved.

The application discloses a silicon dioxide deposition coating process of a vertical LPCVD device, and comprises the following steps: S1, checking whether the process pipe leaks; S2, blowing the process pipe with nitrogen gas under low pressure; S3, after the leakage rate detection is qualified, nitrogen gas is blown into the gas path pipeline, so that the pressure and the gas flow of the process pipe are stabilized under the pressure and the gas flow conditions set during film deposition; S4, under the set pressure condition, a reaction gas source is introduced, and a silicon dioxide film is deposited on the surface of a semiconductor substrate; and S5, after the silicon dioxide film deposition is completed, nitrogen gas is blown into the process pipe and the exhaust pipeline, nitrogen gas is introduced to increase the pressure to normal pressure, and the boat is discharged. The application has the advantages of simple operation, good stability, high film uniformity and the like, solves the problems of poor film thickness uniformity, high process granularity, poor repeat stability and extremely harsh requirements on process pressure of the existing LPCVD when depositing a SiO2 film, and realizes high-quality wafer coating.

The utility model relates to flexible circuit technical field, concretely for a kind of flexible circuit substrate, comprising: PI base material, PI base material is provided with functional layer, functional layer includes the buffer layer of TiO2 or SiO2, CrxOy material setting on PI base material, sputter Cu layer setting on buffer layer and electroplated copper layer setting on sputter Cu layer, through the setting of the buffer layer of TiO2 or SiO2, CrxOy material, compared with the nickel-chromium alloy layer set in traditional technology, need not secondary etching, reduce production procedure, can reduce material impedance, improve material performance, reduce production cost, reduce the generation of etching waste liquid, more environmental protection.

The application relates to a FLASH device and a forming method thereof. The forming method of the FLASH device comprises the following steps: forming a substrate, the substrate comprising a substrate, a plurality of unit structures located above the substrate and an isolation groove located between adjacent unit structures, the unit structure comprising a floating gate and a dielectric layer covering the floating gate; forming a filling layer filling the isolation groove and covering the dielectric layer; forming an auxiliary layer covering the filling layer, the etching selection ratio of the auxiliary layer and the filling layer reaching 1:1; etching back the auxiliary layer and the filling layer at the same etching rate, removing the auxiliary layer and part of the filling layer, and the surface of the remaining filling layer away from the substrate being flush with the surface of the dielectric layer away from the substrate. The application reduces or even avoids the generation of a filling layer sharp corner at the edge of the isolation groove, and eliminates the influence of the filling layer sharp corner on the subsequent deposition of an erasing layer.

This application relates to the field of chip packaging technology, and provides a method for fabricating a packaging substrate, as well as the packaging substrate and electronic device. The fabrication method includes: providing at least two glass substrates; fabricating through-holes in each glass substrate; fabricating a first buffer layer on the inner wall of the through-hole; and stacking and connecting the at least two glass substrates sequentially, with the first buffer layers on the inner walls of the through-holes of adjacent glass substrates connected to form a substrate. This application uses a method of fabricating first buffer layers on at least two glass substrates separately, and then stacking and connecting the at least two glass substrates to form a substrate with a high aspect ratio. This reduces the fabrication difficulty of a single glass substrate, for example, by reducing equipment fabrication pressure or shortening hot-pressing time. Furthermore, the aspect ratio of the glass through-holes on a single glass substrate is smaller, which helps improve the thickness uniformity of the first buffer layer fabricated on the inner wall of the through-hole, ensuring the quality of the packaging substrate.

This invention discloses an automatically target-changing pulsed laser deposition apparatus and method. The apparatus includes a process chamber, a transfer valve, and a buffer chamber. The process chamber is connected to the buffer chamber via the transfer valve and is configured as an internal vacuum chamber. The buffer chamber has a door at its upper part and operates as a vacuum chamber. A sample stage is located on the upper inner side of the process chamber. Two neck tubes are located on the two sides of the process chamber for guiding an external laser source and mounting a laser detection device, respectively. The process chamber also includes a rotatable target stage for loading and unloading targets from the buffer chamber. The buffer chamber includes a rotating target stage mechanism and a vision camera for placing the target material and recording the bottom features of the target material, respectively. This invention provides an automatically target-changing pulsed laser deposition apparatus and method with a compact structure, precise positioning, and automatic target changing capabilities, enabling fully automated deposition of ultrapure thin films.

This invention provides a copper-zinc-tin-sulfur-selenium thin film, its preparation method, and a semiconductor device thereof. The preparation method includes: fully dissolving at least one metal source of copper, zinc, tin, sulfur, and selenium in a ligand solvent; then adding a main solvent, other metal sources, and a sulfur or selenium source; and thoroughly mixing to obtain a copper-zinc-tin-sulfur-selenium precursor solution based on a mixed solvent system. The ligand solvent is a small-molecule solvent with carbonyl or amine coordinating groups that provide lone pairs of electrons to metal cations. The precursor solution is then coated onto a substrate surface to prepare a precursor thin film. The precursor thin film is further subjected to post-selenization or post-sulfurization treatment to obtain the copper-zinc-tin-sulfur-selenium thin film. By introducing a small-molecule solvent with specific coordination ability to form discrete metal-ligand structural units with the metal precursor, metal clusters or oxygen bridge network structures are effectively suppressed. High homogenization of the precursor solution is achieved at the molecular scale, significantly improving the thickness and compositional uniformity of the copper-zinc-tin-sulfur-selenium precursor thin film.

The present invention discloses a preparation method for improving the thickness uniformity of molybdenum thin plates, belonging to the technical field of molybdenum thin plate preparation methods. The preparation method includes: setting two rollers with the same crown and both satisfying 1 / 15000 < tanθ < 1 / 9000 as the upper and lower rollers of a cold rolling mill, where tanθ represents the ratio of the difference d between the diameter at the center of the roll body and the diameter at the edge of the roll body to half of the roll length L / 2; adjusting the bending force and rotational speed of the cold rolling mill until its pressure gauge reaches 6 - 8 MPa, and rolling the cold-rolled semi-finished molybdenum plate through the adjusted cold rolling mill to obtain the finished molybdenum thin plate. The present invention can improve the thickness uniformity of molybdenum thin plates and reduce their surface defects under the condition of not changing the rolling process by coordinately adjusting the bending force of the rolling mill and the crown of the rollers, so as to meet the high-end application requirements.

This invention provides an ultra-thin, high-strength battery foil blank and its manufacturing process, belonging to the field of aluminum alloy technology. The process involves first alloying high-purity aluminum with Zr, Er, Sc, Ce, and Ti-B master alloys, followed by degassing, filtration, casting, and milling to obtain an aluminum alloy ingot. This ingot is then hot-rolled, sprayed with an aluminum-based modified graphene dispersion, embedded rolling, cold rolling, intermediate recovery annealing, and two-stage aging to produce an aluminum-based modified graphene / high-strength aluminum alloy foil blank. Finally, it is rolled with 304 stainless steel strip from top to bottom to thin the core layer to an ultra-thin specification before separation and winding to obtain the ultra-thin, high-strength battery foil blank. This invention achieves ultra-thin battery foil while maintaining high strength.

The application discloses a single-chip vapor deposition device and system, which comprises a base, an at least partially liftable baffle arranged around the base and surrounding a process chamber during a film forming process, a process gas inlet mechanism arranged on one side of the process chamber for supplying process gas, an exhaust port arranged in the process chamber, the exhaust port and the process gas inlet mechanism being arranged on opposite sides of the single-chip vapor deposition device, a wafer transfer port arranged on a side of the single-chip vapor deposition device different from the side where the process gas inlet mechanism and the exhaust port are arranged, and the baffle being provided with a first opening only on a side close to the process gas inlet mechanism, process gas flowing into the process chamber through the first opening, flowing horizontally on the surface of a substrate and epitaxially forming a film, and at least part of process gas not participating in a reaction and reaction byproducts being discharged from the exhaust port. The application can reduce the long velocity difference of process gas at the front and back of a substrate, so as to improve the crystal quality and film thickness uniformity of an epitaxial layer.

The application discloses a kind of based on wind tunnel laminar flow's multilayer smoke / mist film holographic projection system and method, belong to holographic display technical field.The system includes: wind tunnel device, for generating laminar flow along the flow of predetermined direction;At least one smoke / mist film generating device, is arranged in the laminar flow, for spraying multilayer smoke / mist film at different spatial positions of laminar flow;Multiple projectors, for projecting preset image to smoke / mist film layer;And control system, for synchronously controlling the working timing of smoke / mist film generating device and multiple projectors.The multilayer smoke / mist film maintains respective spatial position and thickness under the stable action of laminar flow, and the image projected by multiple projectors forms multilayer superimposed optical image on each layer of smoke / mist film, so as to present three-dimensional holographic image with depth in space.The application stabilizes multilayer smoke / mist film by laminar flow, and realizes stable, clear three-dimensional holographic display effect by combining with multiple projector synchronous projection.

The application provides a method for adjusting the thickness of deep trench sidewall oxide, which comprises the following steps: providing a substrate, forming an epitaxial layer on the surface of the substrate, and forming a stack on the surface of the epitaxial layer, wherein the stack comprises a pad oxide layer, a nitride layer, a polysilicon layer and a hard mask layer from bottom to top; etching the stack, the epitaxial layer and the substrate by using a photolithography etching process to form a deep trench; etching the hard mask layer to make the opening of the deep trench at the position of the hard mask layer larger, and expose a polysilicon layer with a certain size; growing an oxide layer on the surface of the deep trench; etching and removing the oxide layer formed at the bottom of the deep trench to make the bottom of the deep trench communicate with the substrate; and filling the deep trench with polysilicon. The application realizes the protection of the top sidewall oxide layer of the deep trench by adding the step of etching the hard mask layer to expose the polysilicon layer with a certain size, so that the top sidewall oxide layer of the deep trench is not etched too much, the thickness is thickened, and the adjustment of the thickness of the deep trench sidewall oxide is realized.

This invention provides a spray structure, a reaction device, an epitaxial wafer, its preparation method, and its applications. The spray structure has several strip-shaped nozzles, which are divided into first nozzles and second nozzles with different widths. The first and second nozzles are arranged side by side and alternately. The first and second nozzles spray different reactive gases onto the surface of the epitaxial wafer, respectively. A diameter of the tray parallel to the length direction of the strip-shaped nozzles is designated as a baseline. The centerline of the length direction of the first nozzle and the centerline of the length direction of the adjacent second nozzle are designated as the centerline of the first nozzle and the centerline of the second nozzle, respectively. The baseline is located between the centerlines of the first and second nozzles. Using the spray structure provided by this invention, the gas in the central area of ​​the tray can be rapidly and uniformly mixed, essentially eliminating differences in the flow field and concentration field, and significantly improving the thickness uniformity of the epitaxial wafer.

The embodiment of the application provides a kind of multi-source coordinated metal ionization directional deposition method and system, the method includes the high-density plasma self-ionization sputtering based on HiPIMS, forms metal ion M + ; The secondary ionization of plasma generation based on radio frequency induction coupling and metal ion, to improve the proportion and ion flux of metal ion M + ; Based on the dynamic magnetic field construction of multi-section electromagnetic coil and metal ion beam collimation focusing control, the incidence angle of metal ion M + It is concentrated in the angle range close to the normal direction of glass substrate;Through the kinetic energy acceleration of metal ion M + And magnetic field guiding focusing and surface interaction deposition control, form continuous and uniform metal seed layer on the inner wall and hole bottom of via hole.The method realizes the efficient, uniform and controllable deposition of metal seed layer in high aspect ratio glass via hole by integrating the multidimensional regulation of electric field, magnetic field and ion beam.

The present application relates to a growth inhibitor for film formation, a film formation method using the same, and a semiconductor substrate manufactured thereby. Specifically, it relates to a growth inhibitor for film formation which is a compound represented by Chemical Formula 1, a film formation method using the same, and a semiconductor substrate manufactured thereby, [Chemical Formula 1] AnB m X o Y i Z j wherein A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is one or more selected from fluorine, chlorine, bromine, and iodine; Y and Z are each independently one or more selected from oxygen, nitrogen, sulfur, and fluorine, and are different from each other; n is an integer of 1 to 15; o is an integer of 1 or more; m is 0 to 2n+1; i and j are each an integer of 0 to 3. The present application can suppress side reactions, reduce film growth rate, and remove process by-products in the film, thereby greatly improving step coverage and thickness uniformity of the film even when forming a film on a substrate having a complex structure.

This application provides a low-resistivity polycrystalline silicon carbide bulk material and its preparation method and apparatus. The method involves using isostatically pressed graphite as a substrate, first loading it into a reaction mechanism and creating a sealed negative pressure environment through vacuum. Then, the furnace body is heated in sections to a set deposition temperature. Subsequently, argon, hydrogen, methyltrichlorosilane, and nitrogen are sequentially introduced to achieve the set pressure within the furnace, and deposition is carried out at this temperature to obtain a silicon carbide deposit. Finally, the gas supply is stopped, the gas inside the furnace is replaced with nitrogen, and the product is removed after controlled cooling to room temperature. Through vacuum sealing, sectioned temperature control, precise gas supply, and stable pressure deposition, the uniform distribution of reaction gases and the full progress of the reaction are effectively ensured, significantly improving the density, thickness uniformity, and compositional stability of the silicon carbide deposit. Simultaneously, stable nitrogen doping is achieved, resulting in a low-resistivity, high-purity, crack-free, and defect-free polycrystalline silicon carbide bulk material. The process offers strong controllability and good product consistency, meeting the stringent application requirements of high-end industrial fields.

The utility model discloses a multilayer plane taper die head, including die holder, upper die plate, lower die plate, die core, die nozzle and a plurality of middle die plate, the lower end surface of upper die plate, the lower end surface of each middle die plate all is equipped with the convex round table of big from big to small, is equipped with a plurality of spiral grooves that are evenly distributed along the circumference of convex round table on the outer wall of convex round table, be equipped with the recessed cavity in each middle die plate, lower die plate, each convex round table is in the corresponding recessed cavity respectively, each convex round table is equipped with circular cavity, and circular cavity is below recessed cavity, and each circular cavity is sequentially communicated from top to bottom and forms die cavity, and die core is in die cavity, and forms extrusion runner between die core and die cavity, each spiral groove and recessed cavity inner wall form a plurality of spiral runner, between upper die plate and the uppermost middle die plate, between each adjacent middle die plate, between the lowermost middle die plate and lower die plate all are equipped with multistage plane runner, and the upper end of each spiral runner is connected with the corresponding end of multistage plane runner respectively.

The application discloses a manufacturing process for improving the solder mask bridge falling problem of a high-layer circuit board based on an AI server, relates to the field of PCB manufacturing technologies, and comprises a pretreatment process, a silk-screen printing process, a pre-baking process, an exposure process, a developing process and a high-temperature curing process. The pretreatment process adopts volcano ash plate grinding and super-rough cleaning. The silk-screen printing process adopts secondary printing of oil, and the first solder mask bridge position is blocked from oil. The exposure process reduces the gap between the solder mask bridge and the design PAD and etching PAD. The developing process maintains the pH value of developing liquid at a constant value by calculating the ink usage of a single PCB and adopting the drag tank method or the production green oil plate method, so that the problems of the prior art, such as the easy falling of the solder mask bridge and the high defect rate, are solved.

This invention relates to the field of physical vapor deposition (PVD) technology, and in particular to a gas equalization device, comprising a gas splitting mechanism, which includes a splitting component, the splitting component being a disc-shaped hollow shell, one end of which is connected to an MFC gas supply system, and the other end having several gas splitting ports; and a equalization mechanism, the equalization mechanism including a equalization head, the equalization head being a shell structure with openings at the top and bottom, one end of which is connected to the gas splitting ports, and the other end having a equalization plate; this invention, through the arrangement of the gas splitting mechanism and the equalization mechanism, enables the process gas to be uniformly distributed in the PVD reaction chamber, improving the thickness uniformity and composition consistency of the deposited film; the circular structure of the splitting component can uniformly divide the internal airflow into multiple paths, realizing multi-point output of the process gas; the equalization head transforms the output shape of the process gas from a circular structure to a uniform linear structure, improving the uniform diffusion efficiency of the process gas in the PVD reaction chamber.