84results about How to "Improve thickness uniformity" patented technology

This application belongs to the field of semiconductor processing technology, specifically relating to a backlight reflective layer printing device and its application. This application effectively controls the vibration generated during the printing process by optimizing the mechanical structure and position design of the frame, support plate device, and multi-axis spindle, reducing the deviation between the actual operating path and the planned path of the piezoelectric jet valve. This significantly improves the stability of the piezoelectric jet valve operation and the printing accuracy. Furthermore, this application, by setting up a micro-adjustment device, a positioning system, an inkjet calibration system, and a needle alignment device, and utilizing their coordinated relationship, can precisely correct printing parameters such as the jetting position or jetting volume of the piezoelectric jet valve. Therefore, based on the aforementioned stable printer body structure, the coating quality of the backlight reflective layer obtained by piezoelectric jet printing will be further improved. Thus, the backlight reflective layer prepared using this invention has better thickness uniformity and a better reflective effect.

This invention discloses a foreign matter collection device and method for overflow-type down-drawing substrate glass furnaces, belonging to the field of flat glass manufacturing technology. The device provided by this invention includes a fixed tube, a collection tube, and a rotary drive mechanism. The collection tube is hinged to the inner end of the fixed tube within the furnace and consists of two symmetrical U-shaped grooves connected by a central rotating hinge shaft. The rotary drive mechanism drives the collection tube to rotate, so that when the central rotating hinge shaft faces downwards, the two grooves automatically open under gravity to form a U-shaped receiving groove, and when facing upwards, they automatically close to form a sealed circular tube. Using this invention, the process of removing foreign matter from the furnace for cleaning can avoid secondary pollution or safety accidents caused by scattering. The entire switching process is completed online outside the furnace without interrupting production or opening the furnace, completely solving the problems of large production losses and severe disturbances to the furnace temperature and airflow fields caused by the need to stop production for cleaning in traditional devices.

This invention provides a slurry brushing device. The device drives a brushing mechanism to move laterally above an operating table via a brushing moving component. A brushing preparation table and a substrate support are arranged on the upper surface of the operating table in the direction of the brushing mechanism's movement. A convex platform is provided on the brushing preparation table. During the brushing mechanism's movement, the bristles of the discharge cylinder roll against the surface of the convex platform and the substrate surface on the substrate support. This invention, through the convex platform, supplies slurry to bristles that are not fully covered. The bristles of the discharge cylinder are simultaneously penetrated by the slurry and rolled against the surface of the convex platform. The convex platform is large enough for the bristles of the discharge cylinder to roll around the entire surface, allowing the slurry at the discharge port to evenly penetrate the interior of the bristles under gravity. The process of the bristles being squeezed around the entire surface allows the slurry on the inner side of the bristles to better penetrate to the outer side, resulting in a more uniform and fine coating on the substrate surface.

The application discloses a chuck assembly and a semiconductor device, relates to the technical field of semiconductor devices, and comprises a chuck and one or more shaft cylinders, wherein the last shaft cylinder of the plurality of shaft cylinders or one shaft cylinder is connected with the chuck, the inside of each shaft cylinder is provided with a central hole, the central hole is provided with a balance mass and an elastic damping piece, and the elastic damping piece is sleeved with the balance mass to form a balance mass-spring-damping system. The chuck assembly is sleeved with the balance mass through the elastic damping piece to form the balance mass-spring-damping system, the balance mass-spring-damping system generates reverse vibration matched with the vibration of the chuck, micro-vibration generated between the disc surface of the chuck and the contact surface of the substrate is inhibited, generation of friction particles is reduced, stability and cleanliness of a core area of a process environment are improved, process quality of a deposited film is improved, and the needs of high-end processes for extremely low defect rate and ultra-high uniformity of the deposited film are met.

The application provides a dry-process electrode tab film and a preparation method thereof, and belongs to the technical field of dry-process electrode manufacturing. The dry-process electrode tab film comprises active material particles, conductive agent particles and an adhesive, the adhesive is in a fibrous form, the active material particles comprise large-diameter active material particles and small-diameter active material particles, wherein the particle size D50 of the large-diameter active material particles is 4-10 mu m, the particle size D50 of the small-diameter active material particles is 0.9-1.8 mu m, and the small-diameter active material particles are arranged in an area close to and adhered to the adhesive along the extension direction of the adhesive. The dry-process electrode tab film can have good film-forming property and high compaction density.

The technical idea of the present disclosure provides a coating apparatus comprising: a first coating mold configured to discharge a first coating liquid to a base substrate, where the first coating mold comprises: a first outlet configured to discharge the first coating liquid to the base substrate, and a second outlet configured to discharge the first coating liquid to the base substrate; the first outlet is configured to discharge the first coating liquid, and the length of the first outlet in a first direction is greater than that in a second direction; and the first groove is communicated with the first outlet and extends in the second direction.

The packaging substrate manufacturing method of the present invention manufactures a packaging substrate by including the following steps: a preparation step of preparing a panel-level packaging substrate, the panel-level packaging substrate including a core substrate, a first redistribution layer disposed on the core substrate, and a second redistribution layer disposed below the core substrate; and an electroless surface treatment step of simultaneously performing an electroless surface treatment on the upper and lower surfaces of the panel-level packaging substrate to form terminals; the packaging substrate includes: a core layer, a first redistribution layer disposed on the core layer, a second redistribution layer disposed below the core layer, and the terminals disposed on the upper surface of the first redistribution layer and the lower surface of the second redistribution layer; the difference between the maximum thickness value and the minimum thickness value of the terminals formed on the packaging substrate is less than 5 μm; in this case, terminals with improved thickness uniformity can be formed and process efficiency can be improved during terminal formation.

The application provides a baffle assembly and a chemical vapor deposition system. The baffle assembly comprises: at least two baffle groups, which are respectively arranged in at least two temperature different filling areas of a vertical furnace; each baffle group comprises at least one baffle; the thicknesses of baffles in different baffle groups are different; the higher the temperature of the filling area where the baffle group is located, the smaller the thickness of the baffle in the baffle group. The application can make the sum of the thicknesses of the baffles and the films on the baffles in different baffle groups closer in the same reaction time, which is beneficial to reducing the thickness difference of the baffles in different baffle groups, and then the thickness monitoring step of the baffles can be synchronized, the replacement time and the cleaning time of different filling areas can be synchronized, and the efficiency of the thickness monitoring, replacement and cleaning of the baffles is improved. The edge part of the application is thinner than the middle part, the application has a convex structure, the adhesion of the baffle and the deposit can be reduced, and the baffle is convenient to take out.

The invention provides a chip structure, a chip and a preparation method of the chip structure, and the preparation method comprises the steps: providing a substrate, and depositing a metal layer on one side of the substrate; depositing a first dielectric layer on one side, away from the substrate, of the metal layer; depositing a second dielectric layer on one side, deviating from the metal layer, of the first dielectric layer; etching the second dielectric layer, the first dielectric layer and the metal layer to form a metal reflection part and a metal interconnection part; depositing a third dielectric layer on one side, deviating from the substrate, of the etched structure; performing planarization processing on the third dielectric layer by taking the second dielectric layer as a grinding stop layer; removing the second dielectric layer; the first dielectric layer and the third dielectric layer are combined to form a dielectric layer, the dielectric layer comprises a first area and a second area correspondingly, and the surface of the side, away from the substrate, of the first area is flush with the surface of the side, away from the substrate, of the second area. According to the invention, the thickness of the dielectric layer can be accurately controlled, the thickness uniformity of the chip dielectric layer is effectively improved, and the performance of the chip is improved.

The utility model belongs to the technical field of film blowing machines, and particularly relates to a film bubble blowing device of a film blowing machine, which comprises an air ring shell, a plurality of air inlet pipes are mounted on the side wall of the air ring shell, filter boxes are mounted on the air inlet pipes, threaded holes are formed in a sealing plate and a top plate of each filter box, screw rods are assembled in the threaded holes, and the air ring shell and the air ring shell are integrally formed. A top plate and a sealing plate of the filter box are provided with sealing strips, air holes are formed in the side wall of the filter box, a collecting frame is placed in the filter box, a round hole is formed in the collecting frame, a filter plate is fixedly installed in the round hole, a screw is screwed out of a threaded hole in an air inlet pipe, then the sealing plate is opened, and the collecting frame clamped in the filter box is taken out. At the moment, accumulated dust can be collected on the collecting frame, the collecting frame can take out the dust together, then the collecting frame and the filter plate on the collecting frame are cleaned, rapid cleaning of the filter plate is achieved, the filter plate can be rapidly detached and cleaned through the structure, and the detaching convenience of the filter structure can be improved.

The application discloses a silicon dioxide deposition coating process of a vertical LPCVD device, and comprises the following steps: S1, checking whether the process pipe leaks; S2, blowing the process pipe with nitrogen gas under low pressure; S3, after the leakage rate detection is qualified, nitrogen gas is blown into the gas path pipeline, so that the pressure and the gas flow of the process pipe are stabilized under the pressure and the gas flow conditions set during film deposition; S4, under the set pressure condition, a reaction gas source is introduced, and a silicon dioxide film is deposited on the surface of a semiconductor substrate; and S5, after the silicon dioxide film deposition is completed, nitrogen gas is blown into the process pipe and the exhaust pipeline, nitrogen gas is introduced to increase the pressure to normal pressure, and the boat is discharged. The application has the advantages of simple operation, good stability, high film uniformity and the like, solves the problems of poor film thickness uniformity, high process granularity, poor repeat stability and extremely harsh requirements on process pressure of the existing LPCVD when depositing a SiO2 film, and realizes high-quality wafer coating.

The invention discloses a method for realizing water temperature difference adjustment by automatically adjusting water quantity of a crystallizer, and belongs to the technical field of continuous casting of ferrous metallurgy. According to the technical scheme, default cooling water flow of the wide face and the narrow face of the crystallizer is set according to the continuous casting pulling speed (the pulling speed larger than or equal to 1.3 m / min and the pulling speed smaller than 1.3 m / min are set in two gears); the water inlet and outlet temperature difference of the wide surface and the narrow surface is monitored in real time; when the wide surface temperature difference is larger than 9 DEG C, the wide surface water volume is gradually increased step by step, the water volume is 50 L / min every time, the interval is 1 min, and the pulling speed is reduced by 0.1 m / min if the water volume still exceeds the limit after two times of adjustment; when the temperature difference of the narrow surface is greater than 9 DEG C, increasing 30 L / min every time at an interval of 1 min, and reducing the pulling speed if the limit is still exceeded after two times; keeping the water quantity unchanged when the temperature difference is less than or equal to 9 DEG C; and a visual warning signal is sent out when abnormity occurs. According to the method, dynamic partition accurate adjustment of the cooling water amount is achieved, a multi-stage protection mechanism of increasing water first and then decreasing speed is established, surface cracks of the casting blank are remarkably reduced, and the hot delivery rate and production safety of a casting machine are improved.

The invention discloses a preparation method of a gate oxide layer of a SiC-based groove type transistor based on low-temperature oxidation and a device. The preparation method comprises the following steps: S10, obtaining a silicon carbide substrate, wherein the silicon carbide substrate comprises a plane region and a groove region with a groove; s20, forming a first silicon dioxide mask layer covering the side wall of the groove; s30, performing barium ion implantation to form an ion implantation layer; s40, removing the first silicon dioxide mask layer; s50, forming a second silicon dioxide mask layer covering the surface of the plane region, the bottom of the groove and the side wall of the groove; and S60, performing oxidation treatment at the temperature of 700-900 DEG C for 10-120 minutes to form a prefabricated gate oxide layer, and performing annealing treatment to obtain a gate oxide layer. According to the invention, barium ion implantation is carried out on the silicon carbide substrate to form the ion implantation layer, local non-crystallization of silicon carbide crystals is realized, and the oxidation treatment temperature is reduced by cooperating with the oxidation enhancement effect of activated barium ions.

The application relates to an amorphous spray package adjusting device, and relates to the technical field of amorphous strip production equipment, which comprises a rack and a movable frame movably arranged on the rack, a transverse driving mechanism is arranged on the movable frame and used for driving the movable frame to move transversely; an amorphous spray package body is detachably and movably arranged on the movable frame, and a lower end of the amorphous spray package body is provided with an amorphous spray head; a horizontal rotating mechanism and a vertical rotating mechanism are arranged between the movable frame and the amorphous spray package body and are used for driving the amorphous spray package body to rotate in a horizontal plane and a vertical plane respectively; and a lifting mechanism is further arranged to enable the amorphous spray package body to move in a vertical direction. The device can flexibly adjust the amorphous spray package body in multiple degrees of freedom directions, the spraying angle and position of the amorphous spray head can be timely corrected in the production process, so that the spraying precision and stability are improved, the thickness uniformity and surface quality of the amorphous strip are improved, and the reliability of the production process is improved.

The application discloses a method for improving the thickness and quality uniformity of crystal growth, a repairing method and a crystal. The method comprises the following steps: providing a growth system required for growing a group III nitride crystal by a flux method liquid phase epitaxy, forming a temperature gradient between a top layer part and a bottom layer part of a molten growth material, so as to form a closed circulation flow field of the molten growth material and a nitrogen source in the molten growth material; and in an initial stage of the growth of the group III nitride crystal, adjusting the temperature gradient to a positive temperature gradient, and then alternately switching the temperature gradient between the positive temperature gradient and a negative temperature gradient, so as to change the nitrogen source concentration distribution and the growth rate of different regions of a growth interface of the group III nitride crystal, until the growth interface of the group III nitride crystal presents as a flat surface. The method provided by the application is simple in operation and wide in application range, and can reduce the production cost and improve the yield of the crystal.

The invention relates to the technical field of carbon fiber manufacturing equipment, and discloses carbon fiber yarn flapping and conveying equipment and method based on carbon fiber cloth manufacturing, and the carbon fiber yarn flapping and conveying equipment based on the carbon fiber cloth manufacturing comprises an equipment table, a flapping assembly and a resin dipping device, the multiple carbon fiber bundles and the carbon fiber cloth are arranged in the equipment table, a yarn spreading mechanism and a carding mechanism are further arranged in the equipment table, and through the arrangement of the carding mechanism, when the carbon fiber bundles are conveyed to the position between a supporting plate and an adjusting plate, the upper surfaces of the carbon fiber bundles make contact with arc-shaped triggering blocks; if the carbon fiber bundles are wound, knotted and other local thicknesses are inconsistent, the carbon fiber bundles are carded, the two needle plate assemblies which are not located on the same horizontal line are arranged in a staggered mode, the carbon fiber bundles can be carded more comprehensively and efficiently, and the thickness uniformity and the appearance quality of the carbon fiber cloth are improved.

The present application relates to the technical field of vacuum coating, in particular to a rotating-evaporation rate collaborative control method and system based on deposition distribution model, which establishes a deposition process model containing an evaporation source distribution model, a substrate kinematics model and a cumulative dose model; based on the model, a rotating speed ω(t) and an evaporation rate R i (t) are optimized variables, a collaborative control trajectory is generated through multi-objective optimization; the trajectory is executed; and deposition state data is obtained in real time during the coating process, compared with the model prediction value, the model parameters are corrected online and the trajectory is regenerated, realizing rotating-evaporation rate collaborative control. The method first promotes the rotating speed from a fixed parameter to an active control variable, optimizes it collaboratively with the evaporation rate, increases a completely independent control degree of freedom, fundamentally breaks through the uniformity and component precision upper limit of traditional single-variable control, and solves the poor uniformity problem of perovskite photovoltaic components in the prior art.

The utility model relates to flexible circuit technical field, concretely for a kind of flexible circuit substrate, comprising: PI base material, PI base material is provided with functional layer, functional layer includes the buffer layer of TiO2 or SiO2, CrxOy material setting on PI base material, sputter Cu layer setting on buffer layer and electroplated copper layer setting on sputter Cu layer, through the setting of the buffer layer of TiO2 or SiO2, CrxOy material, compared with the nickel-chromium alloy layer set in traditional technology, need not secondary etching, reduce production procedure, can reduce material impedance, improve material performance, reduce production cost, reduce the generation of etching waste liquid, more environmental protection.

The application relates to a FLASH device and a forming method thereof. The forming method of the FLASH device comprises the following steps: forming a substrate, the substrate comprising a substrate, a plurality of unit structures located above the substrate and an isolation groove located between adjacent unit structures, the unit structure comprising a floating gate and a dielectric layer covering the floating gate; forming a filling layer filling the isolation groove and covering the dielectric layer; forming an auxiliary layer covering the filling layer, the etching selection ratio of the auxiliary layer and the filling layer reaching 1:1; etching back the auxiliary layer and the filling layer at the same etching rate, removing the auxiliary layer and part of the filling layer, and the surface of the remaining filling layer away from the substrate being flush with the surface of the dielectric layer away from the substrate. The application reduces or even avoids the generation of a filling layer sharp corner at the edge of the isolation groove, and eliminates the influence of the filling layer sharp corner on the subsequent deposition of an erasing layer.

A polyester film with high in-plane retardation, excellent thickness uniformity, high productivity, good workability, and good planarity is provided. The polyester film disclosed has an in-plane retardation of 3000 nm or more and 30000 nm or less, an in-plane orientation degree of 0.128 or more and 0.155 or less, and a thickness non-uniformity in the film flow direction of less than 8% (it should be noted that the thickness non-uniformity is a value obtained by (maximum thickness - minimum thickness) / average thickness × 100 (%)).

This application discloses a ring-shaped laser cladding device, relating to the field of laser cladding technology. It includes a fixing component, a ring-shaped feeding component, and a ring-shaped laser cladding component. The fixing component is used to fix one end of the workpiece to be processed. The ring-shaped feeding component is arranged around the workpiece to be processed and is used to supply powder to the circumferential surface of the workpiece. The ring-shaped laser cladding component is located on the side of the ring-shaped feeding component away from the fixing component. The ring-shaped laser cladding component generates a ring-shaped laser spot coaxial with the workpiece to be processed and performs laser cladding on the circumferential surface of the workpiece. It can uniformly irradiate the circumferential surface of the workpiece at the center of the ring without rotating the workpiece, avoiding the uneven heating problem caused by unilateral laser irradiation. This ensures that the cladding temperature is consistent at all positions along the circumference of the workpiece, effectively reducing defects such as porosity, cracks, and incomplete fusion in the cladding layer, and improving the forming quality and thickness uniformity of the cladding layer.

The invention discloses a cable resistance welding module which comprises a metal plate, a cable resistance welding spot, a tin storage groove, a chip welding area, a bus bar through groove and a plastic package body. The metal plate is arranged in the length direction, and cable resistance welding spots are arranged at the two ends of the metal plate. Two rectangular tin storage grooves are symmetrically arranged on the inner side of the cable welding spot, and a chip welding area is formed between the tin storage grooves. A through bus bar through groove is formed in the position, corresponding to the tin storage groove, of the metal plate and used for allowing a bus bar to penetrate through and completing welding together with molten tin in the tin storage groove. The tin storage tank is used for storing tin needed by chip welding and bus bar welding and providing controlled welding flux for a chip welding area in the heating process. The zoned structure between the cable welding spot and the chip welding area enables transient heat of resistance welding not to directly act on the chip welding spot, and the welding reliability is improved. The above structure is finally integrally packaged by a plastic package body, and can be used for bypass diode connection in a photovoltaic module.

This application relates to the field of chip packaging technology, and provides a method for fabricating a packaging substrate, as well as the packaging substrate and electronic device. The fabrication method includes: providing at least two glass substrates; fabricating through-holes in each glass substrate; fabricating a first buffer layer on the inner wall of the through-hole; and stacking and connecting the at least two glass substrates sequentially, with the first buffer layers on the inner walls of the through-holes of adjacent glass substrates connected to form a substrate. This application uses a method of fabricating first buffer layers on at least two glass substrates separately, and then stacking and connecting the at least two glass substrates to form a substrate with a high aspect ratio. This reduces the fabrication difficulty of a single glass substrate, for example, by reducing equipment fabrication pressure or shortening hot-pressing time. Furthermore, the aspect ratio of the glass through-holes on a single glass substrate is smaller, which helps improve the thickness uniformity of the first buffer layer fabricated on the inner wall of the through-hole, ensuring the quality of the packaging substrate.