45results about How to "Improve critical dimension uniformity" patented technology

The invention provides an exposure method for manufacturing a device. The method includes providing a wafer having several exposure regions with a photoresist layer covering thereon. A feedback parameter map with several exposure-region feedback parameter sets respectively corresponds to the exposure regions of the wafer. At least one of the exposure-region feedback parameter sets is different from the rest of the exposure-region feedback parameter sets. According to the feedback parameter map, an exposure process is sequentially performed on each of the exposure regions of the wafer through an exposure tool to pattern the photoresist layer on the wafer. While the exposure tool performs the exposure process on each of the exposure regions, an exposure process parameter set of the exposure tool is adjusted based on the exposure-region feedback parameter sets corresponding to the exposure region in the feedback parameter map.

A method for forming patterns of a semiconductor device includes preparing an etch target layer defined with a first region and a second region; forming a regular first feature which is positioned over the etch target layer in the first region and a random feature which is positioned over the etch target layer in the second region; forming a regular second feature over the regular first feature; forming first and second cutting barriers which expose a portion of the random feature, over the random feature; cutting the regular first feature using the regular second feature, to form a regular array feature; cutting the random feature using the first cutting barrier and the second cutting barrier, to form a random array feature; and etching the etch target layer by using the regular array feature and the random array feature, to form a regular array pattern and a random array pattern.

An embodiment of the present invention provides a fly eye lens which is applied to a proximity exposure machine optical system. The fly lens includes a first lens assembly and a second lens assembly, wherein the first lens assembly includes a plurality of lenses which form a first lens face, and the second lens assembly includes a plurality of lenses which form a second lens face. The first lens face is used to split an incident broad light beam into narrow light beams and then refract the narrow light beams onto the second lens face, and the second lens face is used to dispersively refract the received narrow light beams onto a concave mirror in the optical system. A lens closer to a center of the second lens face has a higher transmittivity, and a lens farther from the center of the second lens face has a lower transmittivity. According to the embodiment of the present invention, since different lenses on the second lens face have different transmittivities, the illuminances of light radiated to different regions of a mask plate through the fly eye lens are different, and thus the uniformity of the critical dimensions of the exposed patterns can be improved to a certain extent.

The invention provides a method for manufacturing a self-aligned double pattern and a method for manufacturing a semiconductor device. Considering the negative influence of the process of the target etching layer formed on the semiconductor substrate, the data such as the thickness of the formed target etching layer is fed back In the subsequent process of etching the target etching layer, the etching effect of the target etching layer can be more accurately controlled, thereby improving the uniformity of the key dimensions of the pattern obtained on the target etching layer, and improving the obtained The performance and yield of the semiconductor device; further, considering the negative impact of the lithography process, the lithography process conditions are adjusted in time according to the critical dimensions after lithography and the thickness of the etch protection layer and cover layer, thereby improving the final core. The morphology of the mold is further improved to further improve the uniformity of the critical dimension of the pattern obtained on the target etching layer.

The invention provides a method for improving critical dimension uniformity of a mask. The differential distribution of critical dimension of the mask is fed back to a photoetching step in a mask manufacturing process, so that the photoetching energy distribution in the photoetching step is adjusted, and the aim of improving the critical dimension uniformity of the mask is fulfilled.