3results about How to "Increase critical size" patented technology

This invention discloses a high-reliability ball-locking bearing structure for a top hob and its assembly method. The hob includes a hob shaft, a hob wheel body, and a small-end sealing cap. A large-end sealing cap is integrally mounted on the hob shaft, and the small-end sealing cap is fitted into the hob shaft. A bearing cavity is formed between the inner bore of the hob wheel body and the journal of the hob shaft. The inner bore of the hob wheel body has a large raceway, an R-groove, and a small raceway sequentially formed. Large and small rollers are respectively fitted into the large and small raceways to form a roller bearing. The R-grooves of the hob shaft and the hob wheel body are correspondingly arranged, and balls are fitted inside to form a ball bearing. The two ends of the bearing cavity are sealed by a large-end floating metal sealing ring and a small-end floating metal sealing ring. Both the large-end and small-end floating metal sealing rings have two functional rings. This invention eliminates the bearing rings and multiple fixed sealing structures, thereby improving load-bearing capacity while solving the problem of cap loosening, achieving a synergistic improvement in high load-bearing capacity and high reliability.

The application provides an etching method and a semiconductor process equipment, and relates to the technical field of semiconductors. The etching method is designed to solve the problem that, after etching a metal hard mask layer, rework processing is needed due to overlay error in photolithography, the critical dimension of a weak point region is rapidly reduced during the rework processing, and the yield is reduced. The etching method comprises the following steps: providing a semiconductor device, wherein the semiconductor device comprises a photoresist layer, an antireflection layer, a first dielectric layer, a metal hard mask layer, a second dielectric layer and an ultra-low dielectric constant material layer which are sequentially stacked; etching the antireflection layer with the photoresist layer as a mask to expose the first dielectric layer; and a deposition step, wherein the process gas used in the deposition step comprises methane. The application increases the critical dimension of the bottom of the weak point region, thereby expanding the process window after rework processing, so as to ensure that no deviation occurs when etching a vertical interconnection channel subsequently, thereby improving the yield after rework processing.

The invention discloses a method for forming a SiN deep hole structure, which comprises the following steps: a substrate is placed in a vacuum reaction cavity, and the substrate comprises a substrate and a SiN dielectric layer arranged on the substrate; etching gas is introduced into the vacuum reaction cavity, wherein the etching gas at least comprises CxHyFz gas and oxygen-containing gas; wherein x is larger than or equal to 0 and smaller than 5, y is larger than or equal to 0, z is larger than or equal to 0, y and z are not 0 at the same time, and at least one etching gas with y larger than 0 is included; applying source radio frequency power, and dissociating the etching gas to form etching gas plasma; and applying bias radio frequency power: alternately applying first bias radio frequency power and second bias radio frequency power, and etching the SiN dielectric layer of the substrate to form a SiN deep hole structure, the first bias radio frequency power is greater than the second bias radio frequency power. According to the method, bias radio frequency power and specific etching gas are applied in a high-low power switching mode to etch the SiN dielectric layer, and the deep hole structure with the vertical side wall contour can be rapidly obtained.