The invention relates to the technical field of
semiconductor mask plate cleaning, in particular to a
mask plate cleaning method and a
mask plate cleaning device.The cleaning method comprises the following steps that S1, a mask plate to be cleaned is placed in a
sulfite solution, and the pH of the
sulfite solution is 10-14; and S2, under the condition that the
sulfite solution is activated through
ultraviolet irradiation, the mask plate to be cleaned is cleaned through ultrasonic
waves, and the cleaned mask plate is obtained. According to the method,
ultraviolet irradiation activation is combined with a sulfite
reducing agent, hydration electrons are generated through photolysis in an alkaline environment, the hydration electrons can
attack and break C-F bonds with high
bond energy, defluorination and degradation of the
fluorocarbon polymer are achieved, meanwhile, oxidation of a
chromium layer can be inhibited in a reducing environment, and the service life of the
fluorocarbon polymer is prolonged. Compared with an existing cleaning method, the cleaning method has the advantages that the cleaning efficiency is improved, so that the cleaning frequency of the mask plate is reduced, and the service life of the mask plate is further prolonged.