187results about How to "Difficult to form" patented technology

A nonaqueous secondary battery having a positive electrode having a positive electrode mixture layer, a negative electrode, and a nonaqueous electrolyte, in which the positive electrode contains, as an active material, a lithium-containing transition metal oxide containing a metal element selected from the group consisting of Mg, Ti, Zr, Ge, Nb, Al and Sn, the positive electrode mixture layer has a density of 3.5 g / cm3 or larger, and the nonaqueous electrolyte contains a compound having two or more nitrile groups in the molecule

A method of manufacturing a light emitting device includes: mounting light emitting elements on a collective substrate; arranging a first protruding member surrounding the light emitting elements; arranging a second protruding member between the light emitting elements; forming a cover member covering an upper end of the second protruding member, a lateral surface of each of the light emitting elements in a region surrounded by the first protruding member; and singulating the light emitting devices by cutting the cover member, the second protruding member, and the collective substrate at a portion including the second protruding member. The second protruding member is harder than the cover member. An upper end of the second protruding member is located lower than that of the first protruding member but higher than the upper surface of each of the light emitting elements.

A method for joining a resin member and a porous member can prevent peeling in a specified direction. When a thermoplastic laser transmitting resin member and a porous member are joined, the laser transmitting resin layer and the porous member are laminated, and a laser beam is emitted at a side of the laser transmitting resin member. The porous member is heated so that the laser transmitting resin member is melted, and the melted resin is impregnated with holes of the porous member. The resin is cooled so as to solidify.

The process for producing a magnet according to the invention is characterized by comprising a first step in which a heavy rare earth compound containing Dy or Th as a heavy rare earth element is adhered onto a sintered compact of a rare earth magnet and a second step in which the heavy rare earth compound-adhered sintered compact is subjected to heat treatment, wherein the heavy rare earth compound is a Dy or Th iron compound.

Disclosed is a thermal insulating device comprising: (a) a container or compartment for holding food and / or beverage in a cooled condition, said container comprising thermoformed liner having an average thickness of not greater than about 10 mm, said liner being formed at least in part from material selected from the group consisting of glass-clear polystyrene (GPPS), impact-modified polystyrene (HIPS), styrene-butadiene block copolymers, ASA, SAN, ABS, polyolefins, acrylates and methacrylates, polycarbonates (PCs), polyvinyl chloride (PVC), polyethylene terephthalate (PET) and mixtures, combinations, laminates and layers of these; and (b) thermal insulation adjacent said liner and comprising a polymeric material having closed cells therein wherein said cells are formed from and / or contain a blowing agent comprising at least about 50% by weight of transHFCO-1233zd.

An optically transparent, electrically conductive hybrid film includes a carbon nanotubes network deposited on a substrate, and a population of transparent conductive inorganic nanoparticles distributed throughout the carbon nanotubes network to provide a conductive transparent hybrid film.

Provided is a cathode active material for a lithium secondary battery, which can achieve both of excellent rate characteristic and practically sufficient durability (cycle characteristic) in the lithium secondary battery. The cathode active material for a lithium secondary battery includes therein pores. A particle or film of the cathode active material for a lithium secondary battery has formed therein a large number of pores. The inner wall of each of such pores is coated with a conductive film.

A titanium alloy includes at least one alloying element whose molybdenum equivalent “Moeq” is from 3 to 11% by mass, at least one interstitial solution element selected from the group consisting of O, N and C in an amount of from 0.3 to 3% by mass, and the balance of Ti, when the entirety is taken as 100% by mass. Its content of Al is controlled to 1.8% by mass or less, and it is β single phase at room temperature at least.

Embodiments provide a wiring board which is structured to be suitable for connection with components, whereby its reliability can be improved. An embodied wiring board of the invention has pads and a solder resist in which opening portions which expose the pads are formed. Protrusion-shaped members are fixed to some of the surfaces of the pads. The surfaces of the pads and the surfaces of the protrusion-shaped members are covered with solder bumps. The height of the solder bumps is larger than the height H1 and H2 of the protrusion-shaped members. The opening portions have different inner diameters, and the volume of the protrusion-shaped members increases as the diameter of the opening portion decreases.

Provided is a field-effect transistor (FET) having small off-state current, which is used in a miniaturized semiconductor integrated circuit. The field-effect transistor includes a thin oxide semiconductor which is formed substantially perpendicular to an insulating surface and has a thickness of greater than or equal to 1 nm and less than or equal to 30 nm, a gate insulating film formed to cover the oxide semiconductor, and a strip-like gate which is formed to cover the gate insulating film and has a width of greater than or equal to 10 nm and less than or equal to 100 nm. In this structure, three surfaces of the thin oxide semiconductor are covered with the gate, so that electrons injected from a source or a drain can be effectively removed, and most of the space between the source and the drain can be a depletion region; thus, off-state current can be reduced.

An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films.

The present disclosure relates to a case for a personal electronic device comprising one or more layers formed from a thin-film thermo-formed material and methods to manufacture the same. In a disclosed embodiment, the case for the personal electronic device comprises a flexible inner layer and a thin-film thermo-formed outer-layer.

A reflection type projecting screen includes a diffuse plate having a diffuse transmission surface for converting at least transmission light into diffused light and a corner cube array for reflecting the light passing through the diffuse plate to a position which is approximately similar to a passing position of the diffuse transmission surface. The diffuse plate and the corner cube array are positioned in an order of the diffuse plate and the corner cube array. The reflection screen is capable of improving utilization efficiency of light and simplifying the structure while reducing the effect of outside light. Furthermore, there are provided a front projector system and a multi-vision projector system each of which has a projector for projecting the projection light and a reflection screen for reflecting the projection light as diffused light having directivity in at least one predetermined direction, in accordance with the incident direction of the projection light.

Provided is a field-effect transistor (FET) having small off-state current, which is used in a miniaturized semiconductor integrated circuit. The field-effect transistor includes a thin oxide semiconductor which is formed substantially perpendicular to an insulating surface and has a thickness of greater than or equal to 1 nm and less than or equal to 30 nm, a gate insulating film formed to cover the oxide semiconductor, and a strip-like gate which is formed to cover the gate insulating film and has a width of greater than or equal to 10 nm and less than or equal to 100 nm. In this structure, three surfaces of the thin oxide semiconductor are covered with the gate, so that electrons injected from a source or a drain can be effectively removed, and most of the space between the source and the drain can be a depletion region; thus, off-state current can be reduced.

A carved glass plate ha a curved peripheral spice portion where R1×R2 is 1,500,000 m2 or less, R1 being a radius of curvature determined in a direction parallel to an edge of the glass plate, R2 being a radius of curvature determined in a direction normal to the direction. The curved peripheral surface portion includes a residual plane compressive stress zone and a residual plane tensile stress zone on the inner side of the residual plane compressive stress zone, the residual plane tensile stress zone having a tensile stress value below 8 MPa The glass plate has also a central portion located on the inner side of the residual plane tensile stress zone. This entire central zone is a residual surface compressive stress zone having a residual surface compressive stress value ranging from 10 MPa to 30 MPa.

The invention provides a process for organosolv pulping, wherein solid lignocellulosic feed material is heated at a temperature in the range of from 50 to 210° C. in a solvent to obtain a solid cellulosic fraction comprising at least 50 wt % of the cellulose present in the feed material and a liquid fraction, wherein the solvent comprises at least 10 wt % of a compound according to general molecular formula wherein R1 to R6 each represent, independently, a hydrogen atom or an organic group connected with a carbon atom to the lactone group. The invention further provides the use of a compound according to general molecular formula (1) in a solvent for organosolv pulping.

An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films.

An electron emitting element of the present invention includes an electron acceleration layer that includes insulating fine particles but does not include conductive fine particles, the electron acceleration layer being provided between an electrode substrate and a thin-film electrode. This electron emitting element accelerates electrons in the electron acceleration layer and emits the electrons from the thin-film electrode, when a voltage is applied between the electrode substrate and the thin-film electrode. Accordingly, the electron emitting element of the present invention makes dielectric breakdown hard to occur. Further, this electron emitting element is produced easily at low cost and capable of emitting a steady and sufficient amount of electrons.

A manufacturing method for a ferroelectric memory device includes: forming a ferroelectric capacitor on a substrate, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode; forming a first hydrogen barrier film that covers the ferroelectric capacitor by a chemical vapor deposition method; forming a dielectric film on the first hydrogen barrier film; forming a sidewall composed of the dielectric film on a side of the ferroelectric capacitor by etching back the dielectric film; forming a second hydrogen barrier film on the first hydrogen barrier film and the sidewall by a chemical vapor deposition method; and forming an interlayer dielectric film on the second hydrogen barrier film.

In one aspect, a Zr-based amorphous alloy comprises Zr, Ti, Cu, Ni, Fe, Be, and Sn. In another aspect, a Zr-based amorphous alloy comprises about 30-75 atomic percent of (ZrxTiySnz), about 10-35 atomic percent of (CumNin), about 0.1-15 atomic percent of Fe, and about 0.1-35 atomic percent of Be. Reference numerals x, y and z are atomic fractions, and x+y+z equals to 1, wherein x is about 0.6-0.85, and z is in the range of about 0.01x-0.1x. Reference numerals m and n are atomic fractions, and m+n equals to 1, and wherein m is about 0.5-0.65. In yet another aspect, a method for preparing a Zr-based amorphous alloy comprises melting a raw material comprising Zr, Ti, Cu, Ni, Fe, Be, and Sn to form an alloy mixture; and molding the alloy mixture to form the amorphous alloy.

Disclosed is a piezoelectric element wherein a lower electrode made of Pt, a buffer layer made of PLT, and a piezoelectric thin film to be a perovskite ferroelectric thin film are formed in this order on a substrate. The average crystal grain size of Pt forming the lower electrode is not smaller than 50 nm and not larger than 150 nm.

A napkin package is difficult to form permanent folding, twisting or corrugation in a leakage preventing wall as folded and wrapped by a packaging sheet, to ensure raising of the leakage preventing wall from a surface of a sanitary napkin after opening the package for achieving satisfactory side leakage preventing effect. A sanitary napkin has longitudinally extending leakage preventing walls on both sides of a liquid absorbing portion. A reinforcement sheet is provided on a surface side of a folded sanitary napkin with covering a portion of the folding line, the reinforcement sheet is bent at a position corresponding to the folding line without forming crease, and portions of the leakage preventing walls located corresponding to the portion across which the folding line extends, are urged onto an outer surface of the bent portion of the reinforcement sheet by the elastic tension force.

A polarizing element includes a polarizing element member formed on a substrate and composed of a metal film that has a slit-shaped opening, the opening being provided in a plural number, a coating film formed on the polarizing element member and a space surrounded by the coating film, the substrate and the metal film.

The invention provides a method for building a hollow vascularized heart based on the 3D biological printing technology and the hollow vascularized heart and relates to the technical field of tissue engineering and biology. The method includes: performing reverse modeling to build a heart three-dimensional grid model, importing the data of the heart three-dimensional grid model into a double-nozzle biological printing machine, and driving the nozzles of the printing machine to move according to a predesigned CAD digital model and selected forming parameters, wherein the nozzle 1 of the printing machine is loaded with sacrificial materials and used for printing a support framework, the nozzle 2 of the printing machine sprays biological ink to obtain building bodies, and the effective components of the biological ink comprise hydrogel, platelet-rich plasma, third-generation human umbilical vein endothelial cells and SD rat primary cardiomyocytes; crosslinking and cleaning the building bodies, and performing three-dimensional culture to form the hollow vascularized heart. The method has the advantages that the problem that a large-size hollow vascularized heart is hard in integrated printing, and the hollow vascularized heart built by the method is high in cell activity and has certain functions.

The invention relates to a heat spraying aluminium zinc alloy wire rod composition and its preparing process, wherein the constituents (by weight percentage) of the wire rod include Al 54-56%, 0.004%<=M<=1.08%, impurity whose total amount is less than 1%, and balancing Zn, M is any one or the combination of RE, Mg, Ti or B.

A method for manufacturing a semiconductor device, comprises: (a) forming a first semiconductor layer on a semiconductor substrate in a first region and forming a second semiconductor layer on the semiconductor substrate in a second region, a thickness of the first semiconductor layer being larger than a thickness of the second semiconductor layer; (b) forming a third semiconductor layer on the first semiconductor layer and the second semiconductor layer; (c) forming a first cavity between the third semiconductor layer and the semiconductor substrate in the first region, and a second cavity between the third semiconductor layer and the semiconductor substrate in the second region by removing the first semiconductor layer and the second semiconductor layer, the first cavity and the second cavity having an internal height different each other; (d) forming an insulation layer inside the first cavity and the second cavity so that the first cavity remains a third cavity defined by the insulation layer formed both sides thereof, and the second cavity is filled with the insulation layer; and (e) filling the third cavity with an electrode material.

A Ni-based alloy hardened with the γ′ phase, which is able to exhibit not only superior strength at high temperatures, but also excellent hot corrosion resistance and oxidation resistance at high temperatures in spite of containing no Re or reducing the amount of Re. The Ni-based superalloy contains, by weight, C: 0.01 to 0.5%, B: 0.01 to 0.04%, Hf: 0.1 to 2.5%, Co: 0.8 to 15%, Ta: more than 0% but less than 8.5%, Cr: 1.5 to 16%, Mo: more than 0% but less than 1.0%, W: 5 to 14%, Ti: 0.1 to 4.75%, Al: 2.5 to 7%, Nb: more than 0% but less than 4%, V: 0 to less than 1.0%, Zr: 0 to less than 0.1%, Re: 0 to less than 9%, at least one of platinum group elements: 0 to less than 0.5% in total, at least one of rare earth elements: 0 to less than 0.1% in total, and the rest being Ni except for unavoidable impurities.

There is provided a method for producing a silver powder having excellent dispersibility and capable of forming a paste which do not form suspended matters by phase separation and which is printed on a substrate to form a film having a uniform thickness. In this method, an alkali or a complexing agent is added to an aqueous silver salt containing solution to form a silver oxide containing slurry or an aqueous silver complex salt containing solution. After or before silver particles are deposited by reduction by adding a reducing agent to the silver oxide containing slurry or aqueous silver complex salt containing solution while stirring it, at least one chelating agent selected from the group consisting of compounds having an azole structure, dicarboxylic acids, hydroxy carboxylic acids and salts thereof is added to a silver power containing slurry solution as a dispersing agent.